Abstract: Provided is an AD conversion apparatus including: a reference signal generating circuit configured to output a first reference signal and a second reference signal, whose voltages change with time; a comparison circuit configured to perform a comparison between a voltage of the analog signal and the voltage of the first reference signal; a control circuit configured to generate and output digital data based on the comparison; a digital-to-analog converter configured to generate, using the second reference signal, a signal whose voltage changes with time from a comparison base voltage, the comparison base voltage being based on the digital data, and configured to output the signal to the comparison circuit; and a counter configured to generate a count value by measuring an elapsed time. The comparison circuit is further configured to perform a comparison between the voltage of the analog signal and the signal output from the digital-to-analog converter.

Abstract: A first ramp signal having a potential which is changed with time in a first amplitude range in a first period and a second ramp signal in which a potential is changed with time in a second amplitude range which includes the first amplitude range and which has maximum amplitude larger than maximum amplitude of the first amplitude range and an amount of the change of the potential per unit time is the same as an amount of the change of the potential per unit time of the first ramp signal are generated, and comparison between an optical signal and the first ramp signal and comparison between the optical signal and the second ramp signal are performed in parallel.

Abstract: A photoelectric conversion apparatus includes a pixel. The pixel includes a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. The photoelectric conversion apparatus includes a control line, a voltage control unit, and a current source. The control line is electrically connected to a source of the amplification transistor. The voltage control unit controls the voltage of the control line. The current source outputs a reference current. A path of a current from the amplification transistor is separated from a path of the reference current. The photoelectric conversion apparatus includes a comparison unit configured to compare the current from the amplification transistor with the reference current. During a period in which a transistor connected to the gate of the amplification transistor is in a conductive state, the selection transistor is in a non-conductive state.

Abstract: A solid-state imaging apparatus, including a plurality of pixels, and an A/D conversion unit configured to convert a pixel signal of an analog signal into a digital signal, wherein the A/D conversion unit comprises a comparator, a sampling unit, a counter, and an output unit configured to output the digital signal based on a count result of the counter and a sampling result of the sampling unit, and the sampling unit comprises first and second latch units configured to latch an output from the comparator in response to first and second clock signals, respectively, and a third latch unit configured to latch an output from the first latch unit in response to an output of the second latch unit.

Abstract: In order to suppress a variation of a signal held by each signal holding unit, a solid-state imaging apparatus of the present invention is characterized in that, when a clamp operation of a pixel output signal is performed in the signal holding unit, a time changing rate of an amplitude of a drive pulse supplied to the selecting unit for turning from a non-conducting state to a conducting state is not larger than a time changing rate of the amplitude of the drive pulse supplied to the selecting unit for turning from the conducting state to the non-conducting state.

Abstract: A solid-state imaging apparatus, wherein an analog to digital conversion unit converts an analog signal from the pixel, a first memory holds the digital signal from the analog to digital conversion unit, and thereafter, a second memory holds the digital signal held by the first memory. The analog to digital conversion unit converts an analog signal from the pixel based on a photoelectric conversion of the pixel, and the first memory holds the digital signal from the analog to digital conversion unit. The first memory includes a first latch circuit holding a digital signal from the analog to digital conversion unit and a second latch circuit holding a signal held by the first latch circuit. The second memory includes a third latch circuit holding a signal held in the first latch circuit and a fourth latch circuit holding a signal held in the third latch circuit.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: An object is to provide a solid-state imaging apparatus capable of causing driving signals of pixels to reach the entire screen and of driving all the pixels. The solid-state imaging apparatus includes a pixel region including a plurality of pixels therein, each pixel having a photoelectric conversion element and at least one transistor, and a plurality of driving lines, each driving each of the plurality of transistors arranged in the pixel region, wherein the driving line supplies a driving signal through a buffer arranged in the pixel region to the transistor, and the number of the buffers is smaller than the number of the pixels.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: Provided is an AD conversion apparatus including: a reference signal generating circuit configured to output a first reference signal and a second reference signal, whose voltages change with time; a comparison circuit configured to perform a comparison between a voltage of the analog signal and the voltage of the first reference signal; a control circuit configured to generate and output digital data based on the comparison; a digital-to-analog converter configured to generate, using the second reference signal, a signal whose voltage changes with time from a comparison base voltage, the comparison base voltage being based on the digital data, and configured to output the signal to the comparison circuit; and a counter configured to generate a count value by measuring an elapsed time. The comparison circuit is further configured to perform a comparison between the voltage of the analog signal and the signal output from the digital-to-analog converter.

Abstract: A soft X-ray detection apparatus includes a semiconductor substrate. The semiconductor substrate has a plurality of detection units disposed thereon, each including a conversion unit and a circuit unit. The conversion unit is formed from, for example, a photodiode. The conversion unit collects electric charge generated upon incidence of soft X-ray radiation. A first conductive type (e.g., N-channel type) amplifier transistor is disposed in the circuit unit. The amplifier transistor serves as an amplifier unit that amplifies and outputs a signal supplied from the conversion unit. A first conductive type transistor is not disposed between the conversion units that are immediately adjacent to each other. Alternatively, transistors included in the detection units that are immediately adjacent to each other are disposed so as to be in close proximity to each other.

Abstract: A sensor has an image sensing unit including pixel blocks, and a readout unit for reading out a signal from the image sensing unit. The pixel block includes a photoelectric converter, first and second transistors, and a current source. First main electrodes of the first and second transistors are connected to a common node, and the current source is provided between the common node and a predetermined voltage. A signal readout operation includes an operation in which a voltage corresponding to charges in the photoelectric converter is supplied to a control electrode of the first transistor, and a temporally changing reference voltage is supplied to a control electrode of the second transistor. The readout unit reads out a signal from the image sensing unit via a second main electrode of the first transistor.

Abstract: A photoelectric conversion device includes a photoelectric converter, a transistor having a gate to which a voltage corresponding to charges generated by the photoelectric converter is supplied, a control line connected to a first main electrode of the transistor, and a readout unit configured to read out a signal corresponding to a voltage of the gate, and a voltage controller configured to change a voltage of the control line. The readout unit generates a digital signal corresponding to the voltage of the gate, based on a current flowing through a second main electrode of the transistor during a period in which the voltage controller changes the voltage of the control line.

Abstract: A solid-state imaging device including a plurality of pixels including a photoelectric conversion portion, a charge holding portion accumulating a signal charge transferred from the photoelectric conversion portion, and a floating diffusion region to which the signal charge of the charge holding portion is transferred, wherein the photoelectric conversion portion includes a first semiconductor region of a first conductivity type, and a second semiconductor region of a second conductivity type formed under the first semiconductor region, the charge holding portion includes a third semiconductor region of the first conductivity type, and a fourth semiconductor region of the second conductivity type formed under the third semiconductor region, and a p-n junction between the third semiconductor region and the fourth semiconductor region is positioned deeper than a p-n junction between the first semiconductor region and the second semiconductor region.

Abstract: A solid-state imaging apparatus, wherein an analog to digital conversion unit converts an analog signal from the pixel, a first memory holds the digital signal from the analog to digital conversion unit, and thereafter, a second memory holds the digital signal held by the first memory. The analog to digital conversion unit converts an analog signal from the pixel based on a photoelectric conversion of the pixel, and the first memory holds the digital signal from the analog to digital conversion unit. The first memory includes a first latch circuit holding a digital signal from the analog to digital conversion unit and a second latch circuit holding a signal held by the first latch circuit. The second memory includes a third latch circuit holding a signal held in the first latch circuit and a fourth latch circuit holding a signal held in the third latch circuit.

Abstract: An image pickup apparatus of an embodiment includes pixel units each including a photoelectric conversion unit and an amplification transistor that outputs a signal based on an electric carrier generated by the photoelectric conversion unit, a first output line to which signals from first and other pixel units are output, and a second output line to which signals from second and other pixel units are output. A connection unit is arranged to control an electric connection between input nodes of the amplification transistors of the first and second pixel units is arranged. A control unit is arranged to selectively output a signal from at least one of the first and second pixel units to the first output line out of the first and second output lines when the connection unit mutually connects the input nodes of the first and second pixel units.

Abstract: A solid-state imaging apparatus, including a plurality of pixels, and an A/D conversion unit configured to convert a pixel signal of an analog signal into a digital signal, wherein the A/D conversion unit comprises a comparator, a sampling unit, a counter, and an output unit configured to output the digital signal based on a count result of the counter and a sampling result of the sampling unit, and the sampling unit comprises first and second latch units configured to latch an output from the comparator in response to first and second clock signals, respectively, and a third latch unit configured to latch an output from the first latch unit in response to an output of the second latch unit.

Abstract: A detection apparatus configured to detect soft X-ray radiation, includes a conversion unit and a circuit unit disposed on a semiconductor substrate. The conversion unit has a plurality of conversion elements that convert the soft X-ray radiation incident on the semiconductor substrate into electric charge. The circuit unit has an amplifier transistor that amplifies and outputs a signal supplied from the conversion unit. A shielding unit is disposed above the circuit unit. The shielding unit blocks the soft X-ray radiation incident on the circuit unit. Preferably, the soft X-ray shielding coefficient of a material that forms the shielding unit is higher than the soft X-ray shielding coefficient of each of aluminum and copper. Alternatively, a material that forms the shielding unit has an atomic number higher than or equal to 70.

Abstract: A solid-state imaging apparatus comprises a plurality of unit cell groups including a plurality of unit cells each including a plurality of light shielded optical black pixels, non-light shielded effective pixels and amplifying circuits for amplifying signals from the pixels; and holding capacitors each receiving a signal from corresponding unit cell, so that signals are transferred from all the pixels by a vertical transfer operation and a horizontal transfer operation, each of which is repeated by the number of times equal to the number of the unit cell groups, such that the signals from an optical black pixel and an effective pixel are respectively transferred by the vertical transfer operation and the signals transferred by the vertical transfer operation are successively read out by the horizontal transfer operation to reduce the degrading image quality due to artifact by properly removing an offset varying for each output if it occurs.

Abstract: An imaging device includes a comparator that compares a noise signal with each of a first reference signal and a second reference signal having potentials with different changing quantities per unit time, and that compares a photoelectric conversion signal with each of the first reference signal and the second reference signal. Also, the imaging device AD-converts signals obtained by amplifying the noise signal by a first gain and a second gain having different gains, and AD-converts a signal obtained by amplifying the photoelectric conversion signal by one of a first gain and a second gain.