Abstract: A photoelectric conversion device includes a common output line, a sensor cell unit which outputs a signal to the common output line, a transfer circuit unit which is connected to the common output line, holds a signal from the common output line in a transfer capacitor, and transfers the signal, first, second and third memory cell units each of which stores a signal from the common output line in a memory capacitor, inverts and amplifies the signal in the memory capacitor, and outputs the signal to the common output line.

Abstract: A solid-state image sensor including a wiring portion which includes a first line, a second line and a control line, in first to third regions arranged sequentially, wherein the first line includes a first pattern in a first layer in the first and second regions and a second pattern in a second layer in the third region, and these patterns are connected each other between the second region and the third region, the second line includes a third pattern in the second layer in the first region and a fourth pattern in the first layer in the second and third regions, the these patterns are connected each other between the first region and the second region, and the control line includes a pattern in the second layer in the second region, intersecting with the first pattern and the fourth pattern.

Abstract: An imaging device includes a comparator that compares a noise signal with each of a first reference signal and a second reference signal having potentials with different changing quantities per unit time, and that compares a photoelectric conversion signal with each of the first reference signal and the second reference signal. Also, the imaging device AD-converts signals obtained by amplifying the noise signal by a first gain and a second gain having different gains, and AD-converts a signal obtained by amplifying the photoelectric conversion signal by one of a first gain and a second gain.

Abstract: An image pickup apparatus of an embodiment includes pixel units each including a photoelectric conversion unit and an amplification transistor that outputs a signal based on an electric carrier generated by the photoelectric conversion unit, a first output line to which signals from first and other pixel units are output, and a second output line to which signals from second and other pixel units are output. A connection unit is arranged to control an electric connection between input nodes of the amplification transistors of the first and second pixel units is arranged. A control unit is arranged to selectively output a signal from at least one of the first and second pixel units to the first output line out of the first and second output lines when the connection unit mutually connects the input nodes of the first and second pixel units.

Abstract: An object is to provide a solid-state imaging apparatus capable of causing driving signals of pixels to reach the entire screen and of driving all the pixels. The solid-state imaging apparatus includes a pixel region including a plurality of pixels therein, each pixel having a photoelectric conversion element and at least one transistor, and a plurality of driving lines, each driving each of the plurality of transistors arranged in the pixel region, wherein the driving line supplies a driving signal through a buffer arranged in the pixel region to the transistor, and the number of the buffers is smaller than the number of the pixels.

Abstract: In order to suppress a variation of a signal held by each signal holding unit, a solid-state imaging apparatus of the present invention is characterized in that, when a clamp operation of a pixel output signal is performed in the signal holding unit, a time changing rate of an amplitude of a drive pulse supplied to the selecting unit for turning from a non-conducting state to a conducting state is not larger than a time changing rate of the amplitude of the drive pulse supplied to the selecting unit for turning from the conducting state to the non-conducting state.

Abstract: A solid-state image sensor including a wiring portion which includes a first line, a second line and a control line, in first to third regions arranged sequentially, wherein the first line includes a first pattern in a first layer in the first and second regions and a second pattern in a second layer in the third region, and these patterns are connected each other between the second region and the third region, the second line includes a third pattern in the second layer in the first region and a fourth pattern in the first layer in the second and third regions, the these patterns are connected each other between the first region and the second region, and the control line includes a pattern in the second layer in the second region, intersecting with the first pattern and the fourth pattern.

Abstract: A driving method of a solid-state imaging apparatus including multiple reference level supplying units each arranged correspondingly to a predetermined number of signal holding units, to supply a reference level to an output node of the signal holding unit through the selecting unit, wherein the method includes steps of: performing a clamping operation for sampling and holding the signal in the signal holding unit, by terminating turn ON pulses to be supplied to the selecting units successively in separate timings, one for each one of the selecting units, or one for each group of the selecting units while the reference level is supplied from the reference level supplying unit to the output node; and performing an operation of selecting the signal holding units through the selecting units, by supplying the turn ON pulses successively to the selecting units, to read out the signals successively from the signal holding units selected.

Abstract: A photoelectric conversion device includes a common output line, a sensor cell unit which outputs a signal to the common output line, a transfer circuit unit which is connected to the common output line, holds a signal from the common output line in a transfer capacitor, and transfers the signal, first, second and third memory cell units each of which stores a signal from the common output line in a memory capacitor, inverts and amplifies the signal in the memory capacitor, and outputs the signal to the common output line.

Abstract: In order to suppress a variation of a signal held by each signal holding unit, a solid-state imaging apparatus of the present invention is characterized in that, when a clamp operation of a pixel output signal is performed in the signal holding unit, a time changing rate of an amplitude of a drive pulse supplied to the selecting unit for turning from a non-conducting state to a conducting state is not larger than a time changing rate of the amplitude of the drive pulse supplied to the selecting unit for turning from the conducting state to the non-conducting state.

Abstract: Pixels output a first signal based on signal charge of a part of photoelectric conversion units of multiple photoelectric conversion units, and a second signal based on signal charge of multiple photoelectric conversion units. An imaging apparatus outputs signals based on the first signals and signals based on the second signals by reducing the number of signals based on the first signals as compared to the number of signals based on the second signals.

Abstract: A photoelectric conversion device includes a common output line, a sensor cell unit which outputs a signal to the common output line, a transfer circuit unit which is connected to the common output line, holds a signal from the common output line in a transfer capacitor, and transfers the signal, first, second and third memory cell units each of which stores a signal from the common output line in a memory capacitor, inverts and amplifies the signal in the memory capacitor, and outputs the signal to the common output line.

Abstract: A solid-state imaging apparatus includes a plurality of unit cell groups arranged in a row direction and a plurality of common output lines for transmitting output signals from the plurality of unit cell groups, each including a plurality of unit cells arranged in the row direction. Each of the plurality of unit cells includes an m number of pixels arranged in a column direction and including photoelectric conversion elements each converting incident light to different color signals; an m number of holding units holding color signals of the m number of pixels; an m number of color selecting switches each selecting one color signal from within the color signals held in the m number of holding units; and a transfer switch outputting the color signals selected by the color selecting switches to one common output line of the plurality of common output lines.

Abstract: A soft X-ray detection apparatus includes a semiconductor substrate. The semiconductor substrate has a plurality of detection units disposed thereon, each including a conversion unit and a circuit unit. The conversion unit is formed from, for example, a photodiode. The conversion unit collects electric charge generated upon incidence of soft X-ray radiation. A first conductive type (e.g., N-channel type) amplifier transistor is disposed in the circuit unit. The amplifier transistor serves as an amplifier unit that amplifies and outputs a signal supplied from the conversion unit. A first conductive type transistor is not disposed between the conversion units that are immediately adjacent to each other. Alternatively, transistors included in the detection units that are immediately adjacent to each other are disposed so as to be in close proximity to each other.

Abstract: A detection apparatus configured to detect soft X-ray radiation, includes a conversion unit and a circuit unit disposed on a semiconductor substrate. The conversion unit has a plurality of conversion elements that convert the soft X-ray radiation incident on the semiconductor substrate into electric charge. The circuit unit has an amplifier transistor that amplifies and outputs a signal supplied from the conversion unit. A shielding unit is disposed above the circuit unit. The shielding unit blocks the soft X-ray radiation incident on the circuit unit. Preferably, the soft X-ray shielding coefficient of a material that forms the shielding unit is higher than the soft X-ray shielding coefficient of each of aluminum and copper. Alternatively, a material that forms the shielding unit has an atomic number higher than or equal to 70.

Abstract: A photoelectric conversion apparatus having a pixel array region and a peripheral region includes a pixel array, a readout unit, an output unit, a plurality of output lines, and a color filter layer which is arranged in the pixel array region and the peripheral region and includes a color filter arranged above the plurality of pixels. The color filter layer extends to surround the output lines when viewed from a direction perpendicular to a surface of a semiconductor substrate, and has an opening arranged above the plurality of output lines. The opening of the color filter layer is filled with gas or an insulator lower in dielectric constant than the color filter.

Abstract: A photoelectric conversion device includes a common output line, a sensor cell unit which outputs a signal to the common output line, a transfer circuit unit which is connected to the common output line, holds a signal from the common output line in a transfer capacitor, and transfers the signal, first, second and third memory cell units each of which stores a signal from the common output line in a memory capacitor, inverts and amplifies the signal in the memory capacitor, and outputs the signal to the common output line.

Abstract: A solid-state imaging apparatus includes a plurality of unit cells, each including a plurality of pixels having mutually different color components and a first selecting unit outputting one of the signals from the plurality of pixels selectively. The unit cells are classified into groups. The solid-state imaging apparatus further includes holding units, each provided to each of the unit cells and holding the signal output from the first selecting unit, a plurality of common output lines for outputting signals of mutually different color components, and second selecting units, each selecting one of the plurality of common output lines to output the signals held in the holding unit to the selected common output line. The first selecting units severally output a signal of a different color component from each of the unit cell groups.

Abstract: In a solid-state imaging apparatus, during a horizontal scanning period, a pixel signal is written in a first holding unit, while a horizontal scanning circuit outputs, to the horizontal common output line, the other pixel signal held by a second holding unit. And, a transition time of an edge of a sampling pulse during the horizontal scanning period is set longer than a transition time of an edge of the sampling pulse during a time period other than the horizontal scanning period.

Abstract: A photoelectric conversion apparatus having a pixel array region and a peripheral region includes a pixel array, a readout unit, an output unit, a plurality of output lines, and a color filter layer which is arranged in the pixel array region and the peripheral region and includes a color filter arranged above the plurality of pixels. The color filter layer extends to surround the output lines when viewed from a direction perpendicular to a surface of a semiconductor substrate, and has an opening arranged above the plurality of output lines. The opening of the color filter layer is filled with gas or an insulator lower in dielectric constant than the color filter.