Abstract: A method for path routing according to an embodiment of the present disclosure may include selecting a first start point and a first end point with which path routing is performed in a circular frame generated by connecting all points included in one or more start point sets included in a layer, one or more end point sets paired with the start point set, and one or more edge point pair sets to one closed curve, generating a connectivity graph by connecting edge points included in one or more nodes corresponding to segments obtained by dividing the circular frame into one or more regions, and connecting the first start point and the first end point based on a cost for connecting the first start point and the first end point calculated using the connectivity graph.

Abstract: A method of and an apparatus of controlling a creep torque to be exerted on a vehicle, may include facilitating a control unit to determine from a vehicle speed signal whether or not a vehicle comes to a stop, facilitating the control unit to determine from a slope angle signal a state of a road in accordance with a slope angle of the road; facilitating the control unit to determine a gear-shift step state, facilitating the control unit to decide a creep torque command on the basis of a result of the determination, the gear-shift step state, and information on the state of the road in accordance with the slope angle, and facilitating the control unit to output the decided creep torque command to perform creep torque control that generates a creep torque corresponding to the creep torque command from a motor.

Abstract: A nonvolatile memory device includes a mold structure including a plurality of insulating patterns and a plurality of gate electrodes alternately stacked on a substrate, a semiconductor pattern penetrating through the mold structure and contacting the substrate, a first charge storage film, and a second charge storage film separated from the first charge storage film. The first and second charge storage films are disposed between each of the gate electrodes and the semiconductor pattern. Each of the gate electrodes includes a first recess and a second recess which are respectively recessed inward from a side surface of the gate electrodes. The first charge storage film fills at least a portion of the first recess, and the second charge storage film fills at least a portion of the second recess.

Abstract: A nonvolatile memory device includes a first lower interlayer insulation layer and a second lower interlayer insulation layer that are sequentially stacked in a first direction; a lower metal layer disposed in the first lower interlayer insulation layer; and a plurality of lower bonding metals disposed in the first lower interlayer insulation layer and the second lower interlayer insulation layer and spaced apart from each other in a second direction that intersects the first direction. An uppermost surface in the first direction of the lower metal layer is lower than an uppermost surface in the first direction of the plurality of lower bonding metals, and the lower metal layer is placed between the plurality of lower bonding metals.

Abstract: Various examples of the present invention relate to an apparatus and a method for controlling a connection and an operation of an antenna in an electronic device.

Abstract: A method of fabricating a semiconductor device includes providing a substrate, and forming an interlayered insulating layer on the substrate. The method includes forming a preliminary via hole in the interlayered insulating layer. The method includes forming a passivation spacer on an inner side surface of the preliminary via hole. The method includes forming a via hole using the passivation spacer as an etch mask. The method includes forming a conductive via in the via hole. The passivation spacer includes an insulating material different from an insulating material included in the interlayered insulating layer.

Abstract: A semiconductor memory device includes a lower stacked structure with lower metal lines on a substrate, an upper stacked structure with an upper metal line on the lower stacked structure, a vertical structure penetrating the upper and lower stacked structures and including a channel layer, a first cutting line through the upper and lower stacked structures, an upper supporter in a recess on the first cutting line, a second cutting line through the upper and lower stacked structures and spaced apart from the first cutting line, a sub-cutting line through the upper stacked structure while at least partially overlapping the vertical structure in the vertical direction, the sub-cutting line being between the first and second cutting lines, top surfaces of the upper supporter and sub-cutting line being coplanar, and a first interlayer insulating layer surrounding a sidewall of each of the upper supporter and the sub-cutting line.

Abstract: A semiconductor device includes an active region that extends in a first direction and has a first width in a second direction that intersects the first direction, a first gate structure disposed on the active region that has a second width in the first direction and extends in the second direction, a first metal contact spaced apart from the first gate structure in the first direction, a first trench formed in the active region, and an insulating material that fills the first trench and forms a first active cut, wherein the first active cut defines a first metal region in the active region in which the first metal contact is located, and the first metal contact is placed off-center inside the first metal region and a length of a region where the first gate structure and the active region overlap is greater than that of the first and second trenches.

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

Abstract: A nonvolatile memory device includes a mold structure having a stack of word lines on a substrate and first and second string selection lines on the word lines, a first cutting structure through the mold structure, a second cutting structure through the mold structure, the second cutting structure being spaced apart from the first cutting structure, a channel structure penetrating the mold structure to be connected to the substrate, the channel structure being between the first and second cutting structures, a first cutting line cutting through the first string selection line but not through the second string selection line, the first cutting line being between the first and second cutting structures, and a second cutting line cutting through the second string selection line but not through the first string selection line, the second cutting line being between the second cutting structure and the channel structure.

Abstract: A compressor is disclosed. The compressor includes an upper shell and a lower shell forming an appearance of the compressor. The compressor also includes a coupling portion provided between the upper shell and the lower shell and configured to protrude from a side surface of the upper shell or the lower shell to outside the upper shell or the lower shell. The coupling portion includes at least one coupling protrusion configured to protrude from a side surface of a flange portion to the outside, to increase a rigidity of the flange portion and the coupling portion.

Abstract: A three-dimensional image projection apparatus includes a display having a first output section that outputs a first hologram image and a second output section that outputs a second hologram image, and a prism array that is located in front of the display and refracts light rays of the first hologram image and the second hologram image, and the prism array is slanted at a first angle relative to the display.

Abstract: A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Abstract: Disclosed is a method by which a transmission device transmits data on the basis of a sound signal in a wireless communication system, the method including transmitting a sound packet corresponding to transmission data, with the sound packet including at least one sound symbol, the sound symbol including at least one sound sub-symbol, a plurality of sound symbol types are supported in the wireless communication system, and each of the plurality of sound symbol types is mapped to a preset data value.

Abstract: A semiconductor device including a semiconductor substrate including a chip region and an edge region around the chip region; a lower dielectric layer and an upper dielectric layer on the semiconductor substrate; a redistribution chip pad that penetrates the upper dielectric layer on the chip region and is connected a chip pad; a process monitoring structure on the edge region; and dummy elements in the edge region and having an upper surface lower than an upper surface of the upper dielectric layer.

Abstract: A display device includes, a light emitting element which is disposed in each of a plurality of subpixels and includes a first blue light emitting layer, a green light emitting layer on the first blue light emitting layer, and a second blue light emitting layer on the green light emitting layer; a first light conversion layer disposed in a first subpixel among the plurality of subpixels; and a second light conversion layer disposed in a second subpixel among the plurality of subpixels and having higher light conversion efficiency than the first light conversion layer, thus, the second light conversion layer having high light conversion efficiency is disposed in the second subpixel which is a red subpixel, thereby improving the luminance of the red light.

Abstract: A method of and an apparatus of controlling a creep torque to be exerted on a vehicle, may include facilitating a control unit to determine from a vehicle speed signal whether or not a vehicle comes to a stop, facilitating the control unit to determine from a slope angle signal a state of a road in accordance with a slope angle of the road; facilitating the control unit to determine a gear-shift step state, facilitating the control unit to decide a creep torque command on the basis of a result of the determination, the gear-shift step state, and information on the state of the road in accordance with the slope angle, and facilitating the control unit to output the decided creep torque command to perform creep torque control that generates a creep torque corresponding to the creep torque command from a motor.

Abstract: The present invention relates to a control device and method of a hybrid electric vehicle (HEV) to which Downhill Brake Control (DBC) is applied, and determines whether to perform a braking control of the HEV, by comparing a current vehicle speed of the HEV with a target vehicle speed of the HEV upon operating a DBC function, calculates a braking demand amount based on a difference between the current vehicle speed and the target vehicle speed when the braking control is determined, and controls a vehicle speed of the HEV by determining whether to perform cooperative control of a regenerative braking and a brake hydraulic braking, based on the braking demand amount and a maximum regenerative braking possible amount.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide a method for manufacturing a semiconductor device, and a semiconductor device produced thereby, that comprises an interposer without through silicon vias.

Abstract: An aspect of the present disclosure is to provide a user apparatus, a cleaning robot including the same, and a method of controlling the cleaning robot, and more particularly, to a technology in which the cleaning robot learns cleaning information about a cleaning area, and adjusts a suction power of the cleaning robot and a wideness of the cleaning area based on a battery charge amount of the cleaning robot.