Abstract: A pixel structure of an organic electroluminescent display panel has a plurality of sub-pixel regions. Each of the sub-pixel regions has a plurality of organic luminescent devices electrically connected in series, and the organic luminescent devices disposed in a same sub-pixel region are disposed between a source electrode of a thin film transistor and a voltage source Vdd.

Abstract: The present invention discloses a biological measuring device with auto coding capabilities. In accordance with one embodiment of the present invention, the biological measuring device with auto coding capabilities includes a test strip having a substrate and at least a first contact pad and a second contact pad provided on the substrate; and a code reader having at least a first metal pin and a second metal pin to couple to the first contact pad and the second contact pad to obtain coding information associated with the test strip, wherein the code reader is capable of reading the coding information based on a movement of the test strip before the test strip is placed still in relation to the code reader for a proper reading of a sample.

Abstract: A new process of edge sealing for solar cell modules is described. The process comprises coating a waterproof material on the edge of the solar cell module to form a U-like shaped edge sealing which can achieve the function of shock absorber.

Abstract: A thin film photoelectric conversion module is provided. The thin film photoelectric conversion module includes a substrate and a plurality of photoelectric conversion cells formed on the substrate and connected to each other in series to form a series-connected array. The thin film photoelectric conversion module further comprises a plurality of first electrode rows extending along a current flow direction and a resistive material electrically connected to adjacent two of the first electrode rows, wherein the resistive material has an electrical resistivity no less than 10?9 ohm-cm, wherein when the resistive material is a material different from that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows at least partially connected, and when the resistive material is a material the same as that of the first electrode rows, the resistive material makes adjacent two of the first electrode rows partially connected.

Abstract: A thin film photoelectric conversion module is provided. The thin film photoelectric conversion module comprises a back electrode layer, a plurality of thin film photoelectric conversion cells, a front electrode layer and a plurality of opaque materials. The thin film photoelectric conversion cells are disposed on the back electrode layer in parallel to each other in a lengthwise direction. The front electrode layer is disposed on the thin film photoelectric conversion cells. Each of the opaque materials is disposed on a light-receiving surface of the front electrode layer and is traversing the thin film photoelectric conversion cells in a traversing direction to separate the thin film photoelectric conversion cells into a plurality of sub-arrays. In each of the sub-arrays, the thin film photoelectric conversion cells are connected in series along the traversing direction.

Abstract: A custom assembly light-emitting module using plugs and jacks for obtaining vertical electrical connections, includes a light-emitting unit, a lens unit, a plug unit and a jack unit. The lens unit is detachably combined with the light-emitting unit. The plug unit is disposed beside one side of the lens unit and electrically connected with the light-emitting unit. The jack unit is disposed on a bottom side of the plug unit and electrically connected with the plug unit. In addition, the light-emitting unit has two first retaining structures being formed on two opposite lateral sides thereof, the lens unit has a hollow transparent structure and a lens integratedly with the hollow transparent structure, two second retaining structures are disposed in the hollow transparent structure, and the light-emitting unit is detachably disposed in the hollow transparent structure.

Abstract: A solar panel assembly includes a solar panel, a gasket, a metal frame and a thermal paste. The solar panel has an upper glass substrate and a lower substrate. The gasket seals and sandwiches respective edges of the upper and lower substrates. The metal frame encloses the gasket. The thermal paste is disposed along the gasket or to enclose the gasket.

Abstract: A homogeneously-structured catalyst/enzyme composite structure formed by electrophoresis deposition (EPD) method. Catalyst and enzyme are simultaneously deposited onto the electrode surface by the EPD method, so as to form a film of catalyst/enzyme composite thereon. The film of catalyst/enzyme composite includes enzyme for catalyzing the biochemical reaction, and catalyst for increasing the rate of the electrochemical reaction, which are homogeneously mixed and forms a stable and three-dimensional structure. Also, this homogeneously-structured catalyst/enzyme composite is applicable as a working electrode of the bioreceptor in a mini-biosensor.

Abstract: A supporting and cooling structure and a photovoltaic module with the same are described. The supporting and cooling structure includes a supporting frame to fix a photovoltaic panel of the photovoltaic module, and a supporting and cooling member fixed on the supporting frame. The supporting and cooling member touches the photovoltaic panel to further support the photovoltaic panel and to transmit a heat on the photovoltaic panel to the supporting frame therethrough.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: An output buffer including a first switch circuit and a buffer is provided. The first switch circuit receives first and second input signals. The buffer circuit includes first and second input stages, first and second output stages and a second switch circuit. The first and the second input stages are coupled to the first switch circuit. The first and the second output stages are coupled to the second switch circuit. The second switch circuit, coupled to the first and the second input stages and the first and the second output stages, selectively couples one of first and the second input stages to the first output stage and selectively couples the other to the second output stage. The first switch circuit further selectively provides one of the first and the second input signals to the first input stage and selectively provides the other to the second input stage.

Abstract: The present invention provides a junction box configured to be used with a photovoltaic module. The junction box comprises a central connecting portion adapted to receive metallic ribbons extended from the photovoltaic module, and a peripheral portion enclosing the central connecting portion. The peripheral portion comprises a plurality of recesses defined therein, and each of the recesses is adapted to receive a snap ring of a cable. Further, each of the recesses has an opening to the exterior of the junction box, and a channel communicating with the central connection portion. The opening and the channel of the recess define a longitudinal axis extending toward the central connection portion. The junction box of the present invention allows cables to be coupled to the photovoltaic module in multiple directions.

Abstract: A LED light structure is designed to replace a LED unit easily by user as the LED unit is broken, and a plate member disposed in the LED light structure is removed quickly as replacement. In addition, a heat generating from the LED light structure is eliminated effectively so as to prolong service life of the LED light structure.

Abstract: A method for manufacturing GaN-based film LED based on masklessly transferring photonic crystal structure is disclosed. Two dimensional photonic crystals are formed on a sapphire substrate. Lattice quality of GaN-based epitaxy on the sapphire substrate is improved, and the internal quantum efficiency of GaN-based LED epitaxy is increased. After the GaN-based film is transferred onto heat sink substrate, the two dimensional photonic crystals structure is masklessly transferred onto the light exiting surface of the GaN-based film by using different etching rates between the GaN material and the SiO2 mask, so that light extraction efficiency of the GaN-based LED is improved. That is, the GaN-based film LED according to the invention has a relatively high illumination efficiency and heat sink.

Abstract: A driving circuit applied in an electronic display apparatus is provided. The driving circuit includes a first exchange circuit and a first buffer. The first buffer includes first and second input stages, a second exchange circuit and first and second output stages. The first exchange circuit selectively couples a first input signal and a first output signal outputted from the first output stage to one of the first and the second input stages; and selectively couples a second input signal and a second output signal outputted from the second output stage to the other of the first and the second input stages. The second exchange circuit selectively couples the first input stage to one of the first and the second output stages and selectively couples the second input stage to the other of the first and the second output stages.

Abstract: A ceramic powder composition and an optoelectronic device substrate utilizing the ceramic powder composition are disclosed. The optoelectronic device substrate is formed by sintering a ceramic powder composition including 4 to 97 wt % (weight percent) of zircon, 0 to 60 wt % of silicon dioxide, and 0 to 80 wt % of alumina, wherein the sintered ceramic substrate includes first and second crystalline phases, the first crystalline phase is zircon, and the second crystalline phase is at least one of or a combination of alumina, silicon dioxide, and zirconia crystalline phases, furthermore, the second crystalline phase can also includes a mullite crystalline phase.

Abstract: The present invention provides an electrochemical biosensor. The biosensor includes a substrate; a metal layer disposed on the substrate, wherein a first end of the metal layer is formed with a reaction region by a working electrode and a reference electrode provided on the metal layer, the reaction region is applied with an enzyme so that an electrical response is generated when the enzyme and a test sample form a chemical reaction, and a second end of the metal layer is provided with an integrated information unit to provide both test sample information and coding information.

Abstract: A process for making a partially transparent photovoltaic cell or a partially transparent photovoltaic module comprising series-connected or parallel-connected photovoltaic cells comprises the step of forming a patterned back electrode(s) by screen printing, jet printing, roll-to-roll processing or depositing through a shadow mask with openings. The pattern of the back electrode is determined at the same time when the back electrode is disposed, such that the complexity and cost of the process can be reduced.

Abstract: A pixel structure of an organic electroluminescent display panel has a plurality of sub-pixel regions. Each of the sub-pixel regions has a plurality of organic luminescent devices electrically connected in series, and the organic luminescent devices disposed in a same sub-pixel region are disposed between a source electrode of a thin film transistor and a voltage source Vdd.

Abstract: A Ceramic substrate is provided. The ceramic substrate includes a ceramic main body and a planar buffer layer on the ceramic main body. Further, the coefficient of thermal expansion of the ceramic main body CTEm and the coefficient of thermal expansion of the planar buffer layer CTEp satisfy the following mathematical relationship: |CTEm?CTEp|?3×10?6/° C.