Patents by Inventor Hsuan Lin

Hsuan Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230110102
    Abstract: A solid-state image sensor is provided. The solid-state image sensor includes photoelectric conversion elements and a color filter layer disposed above the photoelectric conversion elements. The photoelectric conversion elements and the color filter layer form normal pixels and auto-focus pixels, the color filter layer that correspond to the normal pixels are divided into first color filter segments and second color filter segments, the first color filter segments are disposed on at least one side that is closer to an incident light, and the width of the first color filter segments is greater than the width of the second color filter segments.
    Type: Application
    Filed: October 7, 2021
    Publication date: April 13, 2023
    Inventors: Ching-Hua LI, Cheng-Hsuan LIN, Zong-Ru TU, Yu-Chi CHANG, Han-Lin WU
  • Publication number: 20230102899
    Abstract: A carbonate-containing epoxy resin and a manufacturing method for a carbonate-containing epoxy resin, an epoxy curable product and a method for degrading an epoxy curable product are provided. The carbonate-containing epoxy resin includes a structure represented by formula (I) or formula (II). Formula (I) and formula (II) are defined as in the specification.
    Type: Application
    Filed: September 6, 2022
    Publication date: March 30, 2023
    Inventors: Ching-Hsuan LIN, Ren-Yu YEH, Yi-Chun CHEN, Meng-Wei WANG, Wen-Chang CHEN
  • Publication number: 20230095392
    Abstract: A flash memory cell includes a rectifying device and a transistor. The rectifying device has an input end coupled to a bit line. The transistor has a charge storage structure. The transistor has a first end coupled to an output end of the rectifying device, the transistor has a second end coupled to a source line, and a control end of the transistor is coupled to a word line.
    Type: Application
    Filed: December 1, 2022
    Publication date: March 30, 2023
    Applicant: MACRONIX International Co., Ltd.
    Inventors: Feng-Min Lee, Po-Hao Tseng, Yu-Hsuan Lin, Ming-Hsiu Lee
  • Publication number: 20230086746
    Abstract: A diamine monomer compound with a structural formula of wherein n1 is an integer greater than 1, forms the basis of a dielectric material with reduced dielectric losses for improved signals transmission. A method for preparing the compound, a polyimide resin made from the compound, a flexible film, and an electronic device including the polyimide resin are also disclosed. The compound has a long but flexible even numbered carbon chain and a liquid crystal unit structure. The reduced regularity and rigidity of the molecular chain make the polyimide resin convenient for film-forming. Dimensional stability is improved, the coefficient of thermal expansion of the materials is reduced, and the materials have good mechanical and thermal properties, the electron loss factor and coefficient of thermal expansion of the materials being reduced.
    Type: Application
    Filed: September 30, 2021
    Publication date: March 23, 2023
    Inventors: KUAN-WEI LEE, SZU-HSIANG SU, SHOU-JUI HSIANG, CHING-HSUAN LIN, WAN-LING HSIAO, REN-YU YEH
  • Publication number: 20230091989
    Abstract: A diamine monomer compound with reduced dielectric losses for better integrity and stability in digital transmissions is represented by a structural formula of wherein n1 is an integer greater than 1. A method for preparing the diamine monomer compound and a polyimide resin developed therefrom are disclosed. The diamine monomer compound introduces a long even numbered carbon chain and a liquid crystal unit structure, the long even numbered carbon chain giving flexibility, which reduces the regularity and rigidity of the molecular chain and facilitates film-forming processing. Dimensional stability is improved, and the coefficient of thermal expansion of the materials is reduced, the materials have good mechanical and heat-tolerant thermal properties, the loss factor and the coefficient of thermal expansion of the materials being reduced. A flexible film of the resin and an electronic device are also disclosed.
    Type: Application
    Filed: September 30, 2021
    Publication date: March 23, 2023
    Inventors: KUAN-WEI LEE, SZU-HSIANG SU, SHOU-JUI HSIANG, CHING-HSUAN LIN, WAN-LING HSIAO, REN-YU YEH
  • Publication number: 20230080656
    Abstract: A three-axis voice coil motor including a base, a spherical bearing, a magnetic component, an X-coil group, a Y-coil group, and at least one Z-coil group is provided. The base has a supporting pole. The spherical bearing is rotatably sleeved around the supporting pole. The magnetic component is securely sleeved around the spherical bearing and the magnetic component rotates along with the spherical bearing. The X-coil group is disposed around the magnetic component along an X-axial direction passing through the spherical bearing, and the X-coil group has first gaps. The Y-coil group is disposed around the magnetic component along a Y-axial direction passing through the spherical bearing, and the Y-coil group has second gaps. The Z-coil group is disposed around the magnetic component along a Z-axial direction passing through the spherical bearing.
    Type: Application
    Filed: October 19, 2021
    Publication date: March 16, 2023
    Applicant: National Cheng-Kung University
    Inventors: Chien-Sheng Liu, Yi-Hsuan Lin, Chiu-Nung Yeh
  • Publication number: 20230078296
    Abstract: A semiconductor structure, including a substrate, a first well, a second well, a first doped region, a second doped region, a first gate structure, a first insulating layer, and a first field plate structure. The first and second wells are disposed in the substrate. The first doped region is disposed in the first well. The second doped region is disposed in the second well. The first gate structure is disposed between the first and second doped regions. The first insulating layer covers a portion of the first well and a portion of the first gate structure. The first field plate structure is disposed on the first insulating layer, and it partially overlaps the first gate structure. Wherein the first field plate structure is segmented into a first partial field plate and a second partial field plate separated from each other along a first direction.
    Type: Application
    Filed: September 16, 2021
    Publication date: March 16, 2023
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Shao-Chang HUANG, Kai-Chieh HSU, Chun-Chih CHEN, Chih-Hsuan LIN
  • Publication number: 20230082785
    Abstract: A manufacturing process of an electronic device including the following steps is provided: placing a reaction part in a pre-reaction chamber; performing a pre-reaction process on the reaction part placed in the pre-reaction chamber; after performing the pre-reaction, transferring the reaction part from the pre-reaction chamber to a reaction chamber; placing a process device in the reaction chamber with the reaction part placed therein; and performing a reaction process on the process device placed in the reaction chamber.
    Type: Application
    Filed: May 16, 2022
    Publication date: March 16, 2023
    Applicant: HERMES-EPITEK CORPORATION
    Inventors: Cheng-Huang Kuo, Kung-Hsuan Lin, Yu-Lun Chang
  • Patent number: 11605210
    Abstract: A method for recognition of characters by optical means in an unclear or non-optimal image of an object document, the image carrying shadows or other impediments inputs the document into a shadow prediction model to obtain a shadow mask. A determination is made as to whether the shadow mask of the document affect an optical character recognition (OCR) performance. The method further inputs the document into a shadow removing model for removal of shadows to obtain an intermediate document if the shadow mask are deemed to affect the OCR performance, then OCR can then be performed on the final object document.
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: March 14, 2023
    Assignee: Mobile Drive Netherlands B.V.
    Inventors: Yun-Hsuan Lin, Yung-Yu Chuang, Tzu-Kuei Huang, Ting-Hao Chung, Nai-Sheng Syu, Yu-Ching Wang, Chun-Hsiang Huang
  • Patent number: 11600097
    Abstract: A fingerprint sensing system including a plurality of micro-lenses, a sensor, a shielding structure and a controller is provided. The micro-lenses are arranged in an array. The sensor has a plurality of sensing pixels arranged in an array. The sensor, the shielding structure and the micro-lenses are sequentially arranged along an arrangement direction. The controller is electrically connected to the sensor. A pitch between the micro-lenses is greater than a pitch between the sensing pixels. The controller forms a fingerprint image according to signals of a plurality of output pixels of the sensor, wherein each of the output pixels is one of every at least four of neighboring sensing pixels. An operation method of a fingerprint sensing system is also provided.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: March 7, 2023
    Assignee: Egis Technology Inc.
    Inventors: Ming-Yuan Cheng, Tang-Hung Po, Yu-Hsuan Lin
  • Publication number: 20230065465
    Abstract: The application discloses an integrated memory device, a manufacturing method and an operation method thereof. The integrated memory cell includes: a first memory cell; and an embedded second memory cell, serially coupled to the first memory cell, wherein the embedded second memory cell is formed on any one of a first side and a second side of the first memory cell.
    Type: Application
    Filed: August 23, 2021
    Publication date: March 2, 2023
    Inventors: Yu-Hsuan LIN, Feng-Min LEE, Po-Hao TSENG
  • Publication number: 20230065056
    Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiao-Chien LIN, Hsi Chung CHEN, Cheng-Hung TSAI, Chih-Hsuan LIN
  • Patent number: 11594266
    Abstract: A semiconductor circuit and an operating method for the same are provided. The method includes the following steps. A memory circuit is operated during a first timing to obtain a first memory state signal S1. The memory circuit is operated during a second timing after the first timing to obtain a second memory state signal S2. A difference between the first memory state signal S1 and the second memory state signal S2 is calculated to obtain a state difference signal SD. A calculating is performed to obtain an un-compensated output data signal OD relative with an input data signal ID and the second memory state signal S2. The state difference signal SD and the un-compensated output data signal OD are calculated to obtain a compensated output data signal OD?.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: February 28, 2023
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yu-Hsuan Lin, Chao-Hung Wang
  • Patent number: 11586321
    Abstract: An electronic device with fingerprint sensing function including a fingerprint sensing array, multiple fingerprint sensing signal readout lines, multiple touch driving lines, a touch driving circuit, and a read circuit is provided. The fingerprint sensing array includes multiple fingerprint sensing units arranged in array. The fingerprint sensing signal readout lines are respectively coupled to a column of fingerprint sensing units of the fingerprint sensing array. The touch driving lines are respectively interleaved with the fingerprint sensing signal readout lines. The touch driving circuit is coupled to the touch driving lines, and provides multiple touch driving signals to the touch driving lines. The read circuit is coupled to the fingerprint sensing signal readout lines. In response to the touch driving lines outputting the touch driving signals, the read circuit determines a touch position of a touch object based on multiple read signals output by the fingerprint sensing signal readout lines.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: February 21, 2023
    Assignee: Egis Technology Inc.
    Inventors: Chung-Yi Wang, Yu-Hsuan Lin
  • Patent number: 11587611
    Abstract: A memory device for data searching and a data searching method thereof are provided. The data searching method includes the following steps. A searching word is received and then divided into a plurality of sections. The sections are encoded as a plurality of encoded sections, so that the encoded sections may correspond to a plurality of memory blocks in a memory array. The encoded sections are directed into the memory blocks to perform data comparisons and obtaining a respective result of data comparison. Thereafter, addresses of bit lines which match the searching word are obtained according to respective result of data comparison for each of memory block.
    Type: Grant
    Filed: July 20, 2021
    Date of Patent: February 21, 2023
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Ming-Hsiu Lee, Po-Hao Tseng, Yu-Hsuan Lin
  • Patent number: 11586418
    Abstract: A random number generator, a random number generating circuit, and a random number generating method are provided. The random number generating circuit includes the random number generator and executes the random number generating method. The random number generator includes a shift register having N storage elements and a combinational logic circuit. The N storage elements receive a random seed in a static state and repetitively perform a bit shift operation in a plurality of clock cycles. The combinational logic circuit generates an output sequence based on the random seed and a random bitstream received from an external source.
    Type: Grant
    Filed: March 3, 2020
    Date of Patent: February 21, 2023
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Po-Hao Tseng, Ming-Hsiu Lee, Yu-Hsuan Lin
  • Patent number: 11587623
    Abstract: A content-address memory (CAM) and an operation method are provided. The content-address memory comprises: a plurality of first signal lines; a plurality of second signal lines; and a plurality of CAM memory cells coupled to the first signal lines and the second signal lines, wherein in data match, a plurality of input signals are input into the CAM memory cells via the first signal lines; the input signals are compared with contents stored in the CAM memory cells; and a match result is determined based on an electrical characteristic of the second signal lines.
    Type: Grant
    Filed: May 14, 2021
    Date of Patent: February 21, 2023
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Po-Hao Tseng, Yu-Hsuan Lin, Feng-Min Lee, Ming-Hsiu Lee
  • Publication number: 20230041756
    Abstract: A signal processing circuit includes a buffer, a first capacitor, a second capacitor, a first switch and a second switch. The buffer includes an input terminal for receiving an external signal and an output terminal for outputting an output signal. The first switch is coupled between the output terminal of the buffer and the first capacitor. The second switch is coupled between the output terminal of the buffer and the second capacitor. The first switch and the second switch are turned on alternately.
    Type: Application
    Filed: August 12, 2020
    Publication date: February 9, 2023
    Applicant: Egis Technology Inc.
    Inventors: Chung-Yi Wang, Yu-Hsuan Lin, Tzu-Li Hung
  • Publication number: 20230040417
    Abstract: The present disclosure relates to the production of transmissible vims defective interfering particles (DIPs), particularly those of dengue virus as well as methods of their production. The DIPs have particular utility as immunogenic compositions and vaccines.
    Type: Application
    Filed: December 3, 2020
    Publication date: February 9, 2023
    Applicant: The Council of the Queensland Institute of Medical Research
    Inventors: David Allen Harrich, Dongsheng LI, Min-Hsuan Lin
  • Publication number: 20230045495
    Abstract: A memory device includes a stack and a plurality of memory strings. The stack is disposed on the substrate, and the stack includes a plurality of conductive layers and a plurality of insulating layers alternately stacked. The memory strings pass through the stack along a first direction, wherein a first memory string in the memory strings includes a first conductive pillar and a second conductive pillar, a channel layer, and a memory structure. The first conductive pillar and the second conductive pillar respectively extend along the first direction and are separated from each other. The channel layer is disposed between the first conductive pillar and the second conductive pillar. The memory structure surrounds the second conductive pillar, and the memory structure includes a resistive memory material.
    Type: Application
    Filed: August 3, 2021
    Publication date: February 9, 2023
    Inventors: Feng-Min LEE, Erh-Kun LAI, Dai-Ying LEE, Yu-Hsuan LIN, Po-Hao TSENG, Ming-Hsiu LEE