Abstract: A method includes extracting a first netlist from a first layout of a semiconductor circuit and estimating layout-dependent effect data based on the first netlist. A first simulation of the semiconductor circuit is performed based on the first netlist using an electronic design automation tool, and a second simulation of the semiconductor circuit is performed based on a circuit schematic using the electronic design automation tool. A weight and a sensitivity of the at least one layout-dependent effect are calculated, and the first layout of the semiconductor circuit is adjusted based on the weight and the sensitivity to provide a second layout of the semiconductor circuit. The second layout is stored in a non-transient storage medium.

Abstract: Interposer and semiconductor package embodiments provide for the isolation and suppression of electronic noise such as EM emissions in the semiconductor package. The interposer includes shield structures in various embodiments, the shield structures blocking the electrical noise from the noise source, from other electrical signals or devices. The shields include solid structures and some embodiments and decoupling capacitors in other embodiments. The coupling structures includes multiple rows of solder balls included in strips that couple the components and surround and contain the source of electrical noise.

Abstract: A data correction apparatus, a data correction method and a tangible machine-readable medium thereof are provided. The data correction method comprises the following steps: receiving a plurality of packets; determining that all of the packets are erroneous packets according to cyclic redundancy check (CRC) information thereof; retrieving any number of pairs among the packets to proceed an exclusive-OR (XOR) logical calculation to generate a plurality of error patterns; obtaining an overall error pattern according to an OR logical calculation of the error patterns; and calculating a correct packet according to one or more of the packets and the overall error pattern.

Abstract: A method for fabricating an inductor structure having an increased quality factor (Q) is provided. In one embodiment, a substrate is provided and a plurality of metal layers are formed on the substrate. A spirally patterned conductor layer is formed over and in the substrate and in the metal layers to produce a planar spiral inductor. A via hole is formed over and in the substrate and in the metal layers within the spirally patterned conductor layer, the via hole being formed by a through silicon via (TSV) process. Thereafter, the via hole is filled with a core layer, wherein the core layer extends from a bottom surface of the substrate to a top surface of the metal layers.

Abstract: A data correction apparatus, a data correction method and a tangible machine-readable medium thereof are provided. The data correction method comprises the following steps: receiving a plurality of packets; determining that all of the packets are erroneous packets according to cyclic redundancy check (CRC) information thereof; retrieving any number of pairs among the packets to proceed an exclusive-OR (XOR) logical calculation to generate a plurality of error patterns; obtaining an overall error pattern according to an OR logical calculation of the error patterns; and calculating a correct packet according to one or more of the packets and the overall error pattern.

Abstract: A method for fabricating an inductor structure having an increased quality factor (Q) is provided. In one embodiment, a substrate is provided over which a spirally patterned conductor layer is formed to produce a planar spiral inductor. A via hole is formed in the substrate within the spirally patterned conductor layer, the via hole being formed by through silicon via (TSV). Thereafter, the via hole is filled with a core layer, wherein the core layer extends from a bottom surface of the substrate to a top surface thereof.