Abstract: A method of dispensing a fluid in a semiconductor manufacturing process includes providing a substrate, positioning a nozzle above the substrate, and determining a cross-sectional shape of the nozzle. The method also includes configuring the nozzle to have the determined cross-sectional shape and applying the fluid to the substrate through the nozzle with the determined cross-sectional shape.

Abstract: A drainage device includes a tank, a pipe and an air duct. The tank has a base plate and at least one first wall. The first wall is disposed on the base plate. The base plate and the first wall define a space. The pipe defines a channel. The pipe connects with the base plate. The channel communicates with the space. The air duct is disposed partially in the space and partially in the channel. There exists at least one gap between an outer surface of the air duct and an inner surface of the pipe.

Abstract: A chemical mechanical polishing (CMP) slurry composition includes an oxidant including oxygen, and an abrasive particle having a core structure encapsulated by a shell structure. The core structure includes a first compound and the shell structure includes a second compound different from the first compound, where a diameter of the core structure is greater than a thickness of the shell structure, and where the first compound is configured to react with the oxidant to form a reactive oxygen species.

Abstract: A method includes disposing a wafer carrier onto a load port; detecting, by a first sensor in the wafer carrier, an elevation of a slot in the wafer carrier; adjusting an elevation of a wafer transferring device according to the detected elevation of the slot; and moving, at the adjusted elevation of the wafer transferring device, a wafer to the slot by the wafer transferring device.

Abstract: A vortex generator including an annular bearing for mounting on an interior surface of an exhaust line. The vortex generator further includes an annular blade assembly mounted on the annular bearing. The annular blade assembly includes a leading face with an upstream opening having a first radius. The annular blade assembly further includes a trailing face with a downstream opening having a second radius, wherein the upstream opening and the downstream opening are centered around a longitudinal axis of the exhaust line, and the second radius is different from the first radius. The annular blade assembly further includes a side extending from the leading face to the trailing face, wherein the side has a plurality of openings, each opening of the plurality of openings containing a blade, and each opening of the plurality of openings extends beyond the annular bearing in a direction parallel to the longitudinal axis.

Abstract: A method includes generating extreme ultraviolet (EUV) light. The EUV light is gathered onto a first region of a first optical reflector by using a collector. A second region of the first optical reflector is free from incidence of the EUV light when the EUV light is reflected onto the first region. The EUV light is reflected to a reticle by using the first optical reflector, so as to impart the EUV light with a pattern. The first optical reflector is rotated such that the EUV light is reflected onto the second region in a first time period and the EUV light is reflected onto the first region in a second period. The first region is free from incidence of the EUV light in the first time period, and the second region is free from incidence of the EUV light in the second time period.

Abstract: Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

Abstract: The present invention provides a solder for nickel based superalloy soldering. The solder includes 11 wt % to 13 wt % chromium, 5.0 wt % to 7.0 wt % aluminum, 3.5 wt % to 5.0 wt % molybdenum, 1.5 wt % to 2.5 wt % niobium, 0.4 wt % to 1.0 wt % titanium, 0.03 wt % to 0.07 wt % carbon, 0.05 wt %-0.15 wt % zirconium, 0.001 wt % to 0.1 wt % boron and remainder nickel or other inevitable impurities, thereby reducing occurrence of soldering hot cracking and insufficient weld bead strength in nickel based superalloy raw materials during soldering.

Abstract: A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

Abstract: The present application related to a camera system and a camera fill light method. The camera system establishes a wireless communications connection with a fill light, captures an original image by a camera in the camera system, and then transmits a first test light signal to the fill light such that a first flash is performed by the fill light. The camera captures a first light source image during the first flash period of the fill light. A fill light controller in the camera system compares differences of the brightness or the chroma of different image information and, after determining the present location of the fill light, calculates a dislocation result of the present location of the fill light and the best placement location of the fill light. The camera system yields the dislocation result to the photographer via a notification message.

Abstract: Embodiments of the present disclosure relate to apparatus and methods for cleaning an exhaust path of a semiconductor process tool. One embodiment provides an exhaust pipe section and a pipe cleaning assembly connected between a semiconductor process tool and a factory exhaust. The pipe cleaning assembly includes a residue remover disposed in the exhaust pipe section. The residue remover is operable to move in the exhaust pipe section to dislodge accumulated materials from an inner surface of the exhaust pipe section.

Abstract: A method includes transferring a wafer to a position over a wafer chuck; lifting a lifting pin through the wafer chuck to the wafer; introducing a gas to a region between the wafer and the wafer chuck through a plurality of first openings on a sidewall of the lifting pin; and lowering the lifting pin until the wafer reaches the wafer chuck.

Abstract: A semiconductor substrate has an exposed surface having a compositionally uniform metal, and an embedded surface having the metal and an oxide. The exposed surface is polished using a first slurry including a first abrasive and a first amine-based alkaline until the embedded surface is exposed. The embedded surface is polished using a second slurry including a second abrasive and a second amine-based alkaline. The second abrasive is different from the first abrasive. The second amine-based alkaline is different from the first amine-based alkaline. The metal and the oxide each has a first and a second removal rate in the first slurry, respectively, and a third and fourth removal rate in the second slurry, respectively. A ratio of the first removal rate to the second removal rate is greater than 30:1, and a ratio of the third removal rate to the fourth removal rate is about 1:0.5 to about 1:2.

Abstract: A semiconductor structure is provided, including a conductive layer, a dielectric layer over the conductive layer, a ruthenium material in the dielectric layer and in contact with a portion of the conductive layer, and a ruthenium oxide material in the dielectric layer laterally between the ruthenium material and the dielectric layer.

Abstract: A method of performing a substrate detection process is provided. The method includes emitting a signal to a surface of a substrate from an emitter disposed in a substrate storage container. The method also includes collecting the signal reflected from the surface of the substrate by a receiver disposed in the substrate storage container. The method further includes transmitting data corresponding to the collected signal to a signal processor. In addition, the method includes analyzing the data, and determining whether an action is to be performed on the substrate based on the analyzing.

Abstract: A wafer is polished by performing a chemical reaction to change a property of a first portion of a material layer on the wafer using a first chemical substance. A first rinse is performed to remove the first chemical substance and retard the chemical reaction. A mechanical polishing process is then performed to remove the first portion of the material layer.

Abstract: An efficient control technology for non-volatile memory is shown. A controller selects the main source block from the non-volatile memory, wherein the main source block has a logical group amount exceeding a threshold amount. The controller selects a target logical group from the main source block, and collects data of the target logical group to a destination block provided by the non-volatile memory to reduce the logical group amount of the main source block.

Abstract: A method for cleaning a reticle includes rotating the reticle, providing a cleaning liquid to clean the reticle, detecting a static charge value on the reticle during rotating the reticle, and reducing static charges on the reticle in response to the detected static charge value. Hence, the electrostatic discharge (ESD) occurred to the reticle can be prevented.

Abstract: An apparatus for dispensing fluid includes a fluid source; a nozzle having an inner layer and an outer layer, the inner layer defining a bore in fluid communication with the fluid source; and a plurality of pins each moveable to be in physical contact with the outer layer, wherein the plurality of pins is operable to apply a force towards the outer layer to adjust a cross-section of the bore.