Abstract: This application relates to a pharmaceutical composition for anti-inflammation, including a probiotic and an antibiotic, and a method of preventing or treating inflammation by using the same. In one aspect, the method includes locally administrating a probiotic and an antibiotic to an inflamed area of a subject.

Abstract: A plasma processing apparatus includes a substrate chuck having a first surface for supporting a substrate, a second surface opposite to the first surface, and a sidewall, a focus ring for surrounding a perimeter of the substrate, and an edge block for supporting the focus ring. The edge block includes a side electrode on the sidewall of the substrate chuck and a bottom electrode on the second surface of the substrate chuck.

Abstract: Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Abstract: A semiconductor package includes; a substrate including a first insulating layer and a first conductive pattern in the first insulating layer, a first semiconductor chip on the substrate, an interposer spaced apart from the first semiconductor chip in a direction perpendicular to an upper surface of the substrate and including a second insulating layer and a second conductive pattern in the second insulating layer, a first element between the first semiconductor chip and the interposer, a connection member between the substrate and the interposer, and a mold layer covering side surfaces of the first semiconductor chip and side surfaces of the first element.

Abstract: A non-volatile memory device includes a memory cell array including a plurality of cell strings, each of the plurality of cell strings includes a gate-induced drain leakage (GIDL) transistor and a memory cell group, and a control logic to apply a voltage to each of the plurality of cell strings. The control logic performs a first erase operation of erasing the memory cell groups of each of the plurality of cell strings, a first verification operation of detecting erase results of the memory cell groups of each of the plurality of cell strings, and a program operation of programming the GIDL transistors of some of the plurality of cell strings.

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Abstract: Proposed is a board game system for carbon neutrality education including: a game display unit including a game board, general cards having carbon cards on which carbon emission quantities are indicated and environment cards on which carbon absorption quantities are indicated, disaster cards on which climate crisis disasters are indicated, convention cards on which rights to change greenhouse gas target amounts are indicated, earth money cards on which scores are indicated, and an indicator for indicating the level of global warming and carbon emission targets; and a game control unit for controlling the game display unit to display the general cards, the disaster cards, the convention cards, the earth money cards, or the indicator on the game board.

Abstract: Disclosed is a stealth device that has a double-band stealth function against millimeter-wavelength electromagnetic waves, has high absorption at a near-infrared laser wavelength, and has low emissivity of mid-infrared light and long-infrared light. The stealth device includes a wavelength-selective absorption pattern layer made of a material having electrical conductivity, wherein the wavelength-selective absorption pattern layer is composed of conductive thin-film patterns capable of causing plasmonic resonance at a first wavelength and a second wavelength different from the first wavelength; and a dielectric layer disposed below the wavelength-selective absorption pattern layer and made of a dielectric material.

Abstract: Provided is an air housing apparatus for protecting, from contamination, scratches, damage and the like, a lens and a cover glass which affect the performance of an optical device installed on a vehicle such as a camera and LIDAR. The air housing apparatus according to an embodiment of the present invention comprises: a cover into which high pressure air is fed; an air guide for injecting the supplied high pressure air toward the front surface of a lens or a sensor; and an air housing provided so as to connect the cover and the air guide and transferring the high pressure air supplied from the cover to the air guide. Therefore, a lens, sensor, or cover glass of a vehicle-installed optical device such as a camera and LIDAR can be continually protected from contamination and scratches by means of the injected air.

Abstract: Auxiliary power management devices are disclosed. In some implementations, an auxiliary power management device may be coupled to an auxiliary power source that serves as a backup power supply for a primary power source to provide power to an electronic device and comprising a plurality of switches to control currents of a plurality of energy storage components, a plurality of channels coupled to the plurality of switches, respectively, a plurality of switch controllers to control the plurality of switches coupled to the plurality of channels and monitor a current or voltage of the plurality of channels, and a management logic to control the switches coupled to the plurality of channels upon detection, by the plurality of switch controllers, of a first current or voltage distribution across the channels that exceeds a predetermined threshold regarding the current or voltage distribution.

Abstract: A non-volatile memory device includes a memory cell array including a plurality of cell strings, each of the plurality of cell strings includes a gate-induced drain leakage (GIDL) transistor and a memory cell group, and a control logic to apply a voltage to each of the plurality of cell strings. The control logic performs a first erase operation of erasing the memory cell groups of each of the plurality of cell strings, a first verification operation of detecting erase results of the memory cell groups of each of the plurality of cell strings, and a program operation of programming the GIDL transistors of some of the plurality of cell strings.

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

Abstract: An operating method of a data storage system comprising a processor and multiple storage devices, the operating method comprising: a first storage operation of selecting a first storage device, a second storage device, and a third storage device among the multiple storage devices and transmitting and storing data generated by the processor in the first storage device and the second storage device, a second storage operation of transmitting, to the third storage device, the data stored in the second storage device and compressing and storing the data in the third storage device, a first access operation of accessing the data in the first storage device, by the processor, after the first storage operation is completed, and a second access operation of accessing the data in the second storage device after fail of the first access operation.

Abstract: A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller.

Abstract: A semiconductor package includes a first substrate that includes a first insulating layer, a ground pattern in the first insulating layer, and a first conductive pattern; a first semiconductor chip placed on an upper surface of the first substrate; a ball array structure that is placed on the upper surface of the first substrate along a perimeter of the first semiconductor chip and is electrically connected to the ground pattern; and a shielding structure placed on the upper surface of the first semiconductor chip and in contact with the upper surface of the ball array structure. The ball array structure has a closed loop shape, and includes a solder ball portion and a connecting portion that connects adjacent solder ball portions. A maximum width of the solder ball portion is greater than a width of the connecting portion in a direction perpendicular to an extension direction of the connecting portion.

Abstract: A method of predicting a shape of a semiconductor device includes implementing a modeled semiconductor shape with respect to a designed semiconductor layout, extracting a plurality of samples by independently linearly combining process variables with respect to the modeled semiconductor shape; generating virtual spectrums with respect to ones of the extracted plurality of samples through optical analysis, indexing the virtual spectrums to produce indexed virtual spectrums, generating a shape prediction model by using the indexed virtual spectrums as an input and the modeled semiconductor shape as an output, and indexing a spectrum measured from a manufactured semiconductor device and inputting the spectrum to the shape prediction model to predict a shape of the manufactured semiconductor device.

Abstract: Disclosed are a display panel including a light emitting panel, and a color conversion panel facing the light emitting panel, wherein the color conversion panel being converts an emission spectrum of light emitted from the light emitting panel, wherein the color conversion panel may include a color conversion layer including a plurality of regions including a color conversion region, and bank defining each region of the color conversion layer, the color conversion region may include quantum dots, and a refractive index of the bank is lower than a refractive index of the quantum dots, and an electronic device including the same.