Abstract: A depressurisation valve for a cooling system including a main chamber having a main valve, a pilot line having a secondary valve and a blowdown line; the main valve being located to seal a path of the coolant system of the nuclear reactor. The main chamber is connected to the cooling circuit via the pilot line allowing coolant to enter the main chamber, and the blowdown line allows coolant to escape from the main chamber, the pilot line having a lower fluid resistance than the blowdown line. The pressure of coolant in the main chamber maintains the main valve in a closed position, and under elevated temperature and/or pressure conditions fluid is prevented from entering the main chamber via a closure of the secondary valve on the pilot line and reduce the pressure from the valve, moving it to its open position.

Abstract: A depressurisation valve for a cooling system including a main chamber having a main valve, a pilot line having a secondary valve and a blowdown line; the main valve being located to seal a path of the coolant system of the nuclear reactor. The main chamber is connected to the cooling circuit via the pilot line allowing coolant to enter the main chamber, and the blowdown line allows coolant to escape from the main chamber, the pilot line having a lower fluid resistance than the blowdown line. The pressure of coolant in the main chamber maintains the main valve in a closed position, and under elevated temperature and/or pressure conditions fluid is prevented from entering the main chamber via a closure of the secondary valve on the pilot line and reduce the pressure from the valve, moving it to its open position.

Abstract: A depressurisation valve for a cooling system comprising: a main chamber having a main valve, a pilot line having a secondary valve and a blowdown line; the main valve being located to seal a path of the coolant system of the nuclear reactor. The main chamber is connected to the cooling circuit via the pilot line allowing coolant to enter the main chamber, and the blowdown line allows coolant to escape from the main chamber, the pilot line having a lower fluid resistance than the blowdown line. The pressure of coolant in the main chamber maintains the main valve in a closed position, and under elevated temperature and/or pressure conditions fluid is prevented from entering the main chamber via a closure of the secondary valve on the pilot line and reduce the pressure from the valve, moving it to its open position.

Abstract: The present disclosure provides a 3D printer including a receiving surface for accepting the accumulation of material layers, and a gantry having a shaft and carriage that is translated along the shaft, and an extruder assembly that is articulated to rotate a printing plane, wherein the extruder assembly is attached to the carriage and the articulated extruder assembly is manipulated to rotate the printing plane away from parallel with the receiving surface.

Abstract: Guard ring technology is disclosed. In one example, an electronic component guard ring can include a barrier having a first barrier portion and a second barrier portion oriented end to end to block ion diffusion and crack propagation in an electronic component. The guard ring can also include an opening in the barrier between the first and second barrier portions extending between a first side and a second side of the barrier. Associated systems and methods are also disclosed.

Abstract: Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The method can further include lining the sidewall with a dielectric material, depositing tungsten on the dielectric material such that a cavity extends through at least a portion of the tungsten, and filling the cavity with a polysilicon material.

Abstract: A coolant injection system for a nuclear power generation system includes the coolant injection system, and method of operation of the coolant injection system. The nuclear power generation system includes a reactor pressure vessel having a reactor core, a pressuriser in fluid communication with the reactor pressure vessel, and the injection system, which comprises a make-up tank having a tank inlet and a tank outlet. The injection system has an operating condition, and a fault response condition, and is configured to switch between these conditions when coolant level in the pressuriser drops below a threshold level. In the operating condition, the tank outlet is isolated from the reactor pressure vessel such that coolant is retained in the make-up tank, and the tank inlet is in fluid communication with the reactor pressure vessel and the pressuriser.

Abstract: A depressurisation valve for a cooling system comprising: a main chamber having a main valve, a pilot line having a secondary valve and a blowdown line; the main valve being located to seal a path of the coolant system of the nuclear reactor. The main chamber is connected to the cooling circuit via the pilot line allowing coolant to enter the main chamber, and the blowdown line allows coolant to escape from the main chamber, the pilot line having a lower fluid resistance than the blowdown line. The pressure of coolant in the main chamber maintains the main valve in a closed position, and under elevated temperature and/or pressure conditions fluid is prevented from entering the main chamber via a closure of the secondary valve on the pilot line and reduce the pressure from the valve, moving it to its open position.

Abstract: Guard ring technology is disclosed. In one example, an electronic component guard ring can include a barrier having a first barrier portion and a second barrier portion oriented end to end to block ion diffusion and crack propagation in an electronic component. The guard ring can also include an opening in the barrier between the first and second barrier portions extending between a first side and a second side of the barrier. Associated systems and methods are also disclosed.

Abstract: Needle comprising a polyarylene material comprising a polyarylene. The needle can meet all the advantages of metal, while avoiding its drawbacks. It has a high rigidity and ductility, and is excellent in penetrability and ability to hold a sharp edge. It is easily disposable and recyclable. It is non toxic and non irritant.

Abstract: Guard ring technology is disclosed. In one example, an electronic component guard ring can include a barrier having a first barrier portion and a second barrier portion oriented end to end to block ion diffusion and crack propagation in an electronic component. The guard ring can also include an opening in the barrier between the first and second barrier portions extending between a first side and a second side of the barrier. Associated systems and methods are also disclosed.

Abstract: A coolant injection system for a nuclear power generation system includes the coolant injection system, and method of operation of the coolant injection system. The nuclear power generation system includes a reactor pressure vessel having a reactor core, a pressuriser in fluid communication with the reactor pressure vessel, and the injection system, which comprises a make-up tank having a tank inlet and a tank outlet. The injection system has an operating condition, and a fault response condition, and is configured to switch between these conditions when coolant level in the pressuriser drops below a threshold level. In the operating condition, the tank outlet is isolated from the reactor pressure vessel such that coolant is retained in the make-up tank, and the tank inlet is in fluid communication with the reactor pressure vessel and the pressuriser.

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

Abstract: Guard ring technology is disclosed. In one example, an electronic component guard ring can include a barrier having a first barrier portion and a second barrier portion oriented end to end to block ion diffusion and crack propagation in an electronic component. The guard ring can also include an opening in the barrier between the first and second barrier portions extending between a first side and a second side of the barrier. Associated systems and methods are also disclosed.

Abstract: The invention provides a high-performance liquid chromatography system, said system is controlled in temperature by running a fluid in sleeves that surround the different parts of the system. All parts in contact with the fluid are made in fluoropolymer, carbon-filled fluoropolymer, or carbon-fiber fluoropolymer.

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

Abstract: The invention pertains to improved proppant particles comprising an aromatic polycondensation polymer having a glass transition temperature (Tg) of at least 120° C. when measured according to ASTM 3418 [polymer (P)] and a method of treating a subterranean formation using said proppant particles.

Abstract: Some embodiments include methods of forming interconnects through semiconductor substrates. An opening may be formed to extend partway through a semiconductor substrate, and part of an interconnect may be formed within the opening. Another opening may be formed to extend from a second side of the substrate to the first part of the interconnect, and another part of the interconnect may be formed within such opening. Some embodiments include semiconductor constructions having a first part of a through-substrate interconnect extending partially through a semiconductor substrate from a first side of the substrate; and having a second part of the through-substrate interconnect extending from a second side of the substrate and having multiple separate electrically conductive fingers that all extend to the first part of the interconnect.

Abstract: Apparatuses and methods can include a die seal between an integrated circuit region of a die and a periphery of the die. A via chain(s) may be arranged around an inner circumference of the die seal between the die seal and the integrated circuit region and/or around an outer circumference of the die seal between the die seal and the periphery of the die. The via chain may include a plurality of contacts comprised of conductive material and extending through portions of the die. Circuitry may be coupled to an end of the via chain to detect an electrical signal. Additional apparatuses and methods are described.

Abstract: Microelectronic devices with through-silicon vias and associated methods of manufacturing such devices. One embodiment of a method for forming tungsten through-silicon vias comprising forming an opening having a sidewall such that the opening extends through at least a portion of a substrate on which microelectronic structures have been formed. The method can further include lining the sidewall with a dielectric material, depositing tungsten on the dielectric material such that a cavity extends through at least a portion of the tungsten, and filling the cavity with a polysilicon material.