Abstract: A repetition rate (pulse) multiplier includes one or more beam splitters and prisms forming one or more ring cavities with different optical path lengths that delay parts of the energy of each pulse. A series of input laser pulses circulate in the ring cavities and part of the energy of each pulse leaves the system after traversing the shorter cavity path, while another part of the energy leaves the system after traversing the longer cavity path, and/or a combination of both cavity paths. By proper choice of the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitters. Some embodiments generate a time-averaged output beam profile that is substantially flat in one dimension.

Abstract: An optical inspection system that utilizes sub-200 nm incident light beam to inspect a surface of an object for defects is described. The sub-200 nm incident light beam is generated by combining first light having a wavelength of about 1109 nm with second light having a wavelength of approximately 234 nm. An optical system includes optical components configured to direct the incident light beam to a surface of the object, and image relay optics are configured to collect and relay at least two channels of light to a sensor, where at least one channel includes light reflected from the object, and at least one channel includes light transmitted through the object. The sensor is configured to simultaneously detect both the reflected and transmitted light. A laser for generating the sub-200 nm incident light beam includes a fundamental laser, two or more harmonic generators, a frequency doubler and a two frequency mixing stages.

Abstract: A pulse multiplier includes a polarizing beam splitter, a wave plate, and a set of multi-surface reflecting components (e.g., one or more etalons and one or more mirrors). The polarizing beam splitter passes input laser pulses through the wave plate to the multi-surface reflecting components, which reflect portions of each input laser pulse back through the wave plate to the polarizing beam splitter. The polarizing beam splitter reflects each reflected portion to form an output of the pulse multiplier. The multi-surface reflecting components are configured such that the output pulses exiting the pulse multiplier have an output repetition pulse frequency rate that is at least double the input repetition pulse frequency.

Abstract: An improved solid-state laser for generating sub-200 nm light is described. This laser uses a fundamental wavelength between about 1030 nm and 1065 nm to generate the sub-200 nm light. The final frequency conversion stage of the laser creates the sub-200 nm light by mixing a wavelength of approximately 1109 nm with a wavelength of approximately 234 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

Abstract: A field effect transistor (FET) with an underlying airgap and methods of manufacture are disclosed. The method includes forming an amorphous layer at a predetermined depth of a substrate. The method further includes forming an airgap in the substrate under the amorphous layer. The method further includes forming a completely isolated transistor in an active region of the substrate, above the amorphous layer and the airgap.

Abstract: A semiconductor structure and method of manufacture and, more particularly, a field effect transistor that has a body contact and method of manufacturing the same is provided. The structure includes a device having a raised source region of a first conductivity type and an active region below the raised source region extending to a body of the device. The active region has a second conductivity type different than the first conductivity type. A contact region is in electric contact with the active region. The method includes forming a raised source region over an active region of a device and forming a contact region of a same conductivity type as the active region, wherein the active region forms a contact body between the contact region and a body of the device.

Abstract: A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.

Abstract: A semiconductor device may include a transistor gate in a device layer; an interconnect layer over the device layer; and an air gap extending through the interconnect layer to contact an upper surface of the transistor gate. The air gap provides a mechanism to reduce both on-resistance and off-capacitance for applications using SOI substrates such as radio frequency switches.

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light.

Abstract: A pulse multiplier includes a polarizing beam splitter, a wave plate, and a set of mirrors. The polarizing beam splitter receives an input laser pulse. The wave plate receives light from the polarized beam splitter and generates a first set of pulses and a second set of pulses. The first set of pulses has a different polarization than the second set of pulses. The polarizing beam splitter, the wave plate, and the set of mirrors create a ring cavity. The polarizing beam splitter transmits the first set of pulses as an output of the pulse multiplier and reflects the second set of pulses into the ring cavity. This pulse multiplier can inexpensively reduce the peak power per pulse while increasing the number of pulses per second with minimal total power loss.

Abstract: The present invention is a method for dynamically determining a blended navigation solution for a mobile platform (ex.—aircraft) via a receiver implemented on-board the platform. In the method disclosed herein, the receiver concurrently utilizes data from satellite signals obtained from a plurality of independent satellite constellations in calculating its (the receiver's) navigation solution (ex.—Position, Velocity, Time (PVT) solution), thereby overcoming weaknesses inherent in currently available systems and methods, which rely on only a single satellite constellation.

Abstract: Device structures for a bipolar junction transistor and methods for fabricating a device structure using a substrate. One or more primary trench isolation regions are formed that surround an active device region of the substrate and a collector contact region of the substrate. A base layer is formed on the active device region and the collector contact region, and the active device region includes a collector. Each primary trench isolation region extends vertically to a first depth into the substrate. A trench is formed laterally located between the base layer and the collector contact region and that extends vertically through the base layer and into the substrate to a second depth that is less than the first depth. A dielectric is formed in the trench to form a secondary trench isolation region. An emitter is formed on the base layer.

Abstract: A pulse multiplier includes a beam splitter and one or more mirrors. The beam splitter receives a series of input laser pulses and directs part of the energy of each pulse into a ring cavity. After circulating around the ring cavity, part of the pulse energy leaves the ring cavity through the beam splitter and part of the energy is recirculated. By selecting the ring cavity optical path length, the repetition rate of an output series of laser pulses can be made to be a multiple of the input repetition rate. The relative energies of the output pulses can be controlled by choosing the transmission and reflection coefficients of the beam splitter. This pulse multiplier can inexpensively reduce the peak power per pulse while increasing the number of pulses per second with minimal total power loss.

Abstract: The present invention includes a fundamental laser light source configured to generate fundamental wavelength laser light, a first nonlinear optical crystal configured to generate first alternate wavelength light, a second nonlinear optical crystal configured to generate second alternate wavelength light, a set of Brewster angle wavefront processing optics configured to condition the first and second alternate wavelengths of light, and a harmonic separator configured to receive the first alternate wavelength light and the second alternate wavelength light from the set of Brewster angle wavefront processing optics, the harmonic separator configured to at least partially separate the first alternate wavelength light from the second alternate wavelength light.

Abstract: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light.

Abstract: Laser and inspection systems that generate laser output light at sub-200 nm wavelengths using fundamental light at approximately 1064 nm. A second harmonic generator module generates second harmonic light directed to both an optical parametric (OP) module, which generates down-converted signal (idler light), and to a fifth harmonic generator module, which generates fifth harmonic light. The OP module includes an optical parametric oscillator that is configured to generate the idler signal at approximately 0.5 times the fundamental frequency. The idler light and fifth harmonic light are then mixed by a frequency mixing module to generate the laser output light having an output frequency equal to approximately 5.5 times the fundamental frequency.

Abstract: Approaches for an on-chip antenna are provided. A method includes forming an antenna in an insulator layer at a front side of a substrate. The method also includes forming a trench in the substrate underneath the antenna. The method further includes forming a fill material in the trench. The substrate is composed of a material having a first dielectric constant. The fill material has a second dielectric constant that is less than the first dielectric constant.

Abstract: Device structures for a bipolar junction transistor and methods of fabricating a device structure for a bipolar junction transistor. A base layer comprised of a first semiconductor material is formed. An emitter layer comprised of a second semiconductor material is formed on the base layer. The emitter layer is patterned to form an emitter finger having a length and a width that changes along the length of the emitter finger.

Abstract: The disclosure is directed to a universal tracking system configured for tracking a plurality of supported sources and/or signal types. The universal tracking system may include an acquisition module configured to execute a serial or parallel search to detect visible signals. The universal tracking system may include at least one universal channel capable of extracting tracking data from a plurality of supported signal types. The universal channel may include complex correlators configured to correlate digital samples associated with one or more ranging signals utilizing primary, sub-carrier, and/or secondary codes. The universal channel may be configured to determine tracking data associated with at least one ranging signal of the plurality of supported signal types. The universal tracking system may further include a navigation processor configured to determine location utilizing tracking data received from one or more universal channels.