Abstract: A method of forming a polysilicon layer includes providing a silicon precursor onto an object loaded in a process chamber to form a seed layer. The silicon precursor includes a nitrogen containing silicon precursor and a chlorine containing silicon precursor. The method further includes providing a silicon source on the seed layer.

Abstract: A nonvolatile memory device includes a gate structure including inter-gate insulating patterns that are vertically stacked on a substrate and gate electrodes interposed between the inter-gate insulating patterns, a vertical active pillar connected to the substrate through the gate structure, a charge-storing layer between the vertical active pillar and the gate electrode, a tunnel insulating layer between the charge-storing layer and the vertical active pillar, and a blocking insulating layer between the charge-storing layer and the gate electrode. The charge-storing layer include first and second charge-storing layers that are adjacent to the blocking insulating layer and the tunnel insulating layer, respectively. The first charge-storing layer includes a silicon nitride layer, and the second charge-storing layer includes a silicon oxynitride layer.

Abstract: Disclosed is a lower shock-absorbing apparatus for washing machine packing that supports and protects a washing machine to prevent damage to the washing machine during transportation of the washing machine. The lower shock-absorbing apparatus includes a cap mounted at a drive shaft mounted to a washing tub to rotate the washing tub, a reinforcement guide to receive the cap, and a lower cushion disposed below the washing tub to absorb shock applied to the washing tub and to receive the reinforcement guide.

Abstract: A washing machine having a drying apparatus, which can perform a heated drying operation and shorten a drying time of laundry, is provided. The washing machine having a drying apparatus includes a top cover which is provided in an upper part of a body and has at least one air hole formed in a top surface thereof, a drying duct which is provided in the top cover to supply air heated by a heater provided thereinside to the air hole, and a rack member which is provided to be extractable from the body to hang laundry above the body.

Abstract: A washing machine in which the structure of a laundry weight sensing apparatus to sense the weight of laundry within a tub is enhanced. The washing machine includes a cabinet, a tub, a support member provided with one end combined with the tub and the other end combined with the cabinet so as to support the tub to the cabinet, and a laundry weight sensing apparatus provided with one side combined with the support member to use load of the tub transmitted to the support member so as to sense the weight of laundry within the tub and the other side contacting one surface of the cabinet to prevent impact transmitted from the tub. The washing machine may precisely measure the weight of laundry without influence of surrounding environments and prevent an error generated due to transmission of vibration caused by operation of the tub.

Abstract: A door hinge apparatus having a coupling structure between a door and a cabinet, and a drum-type washing machine having the same. The drum type washing machine includes an inlet formed through the cabinet to allow laundry to be inserted or withdrawn therethrough, a door coupled to the cabinet to open and close the inlet, and a hinge between the door and the cabinet. The hinge includes a cabinet bracket coupled to a front surface of the cabinet, a door bracket coupled to the door, a first moving unit coupled to the door bracket to allow the door to be pivoted with respect to the cabinet, and a second moving unit coupled to the cabinet bracket to allow the door to protrude forward from the cabinet and be substantially parallel and spaced from the cabinet.

Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.

Abstract: A washing machine including a drum capable of improving washing efficiency is provided. The washing machine includes a body, a tub provided at an inside the body to store wash water, a drum rotatably provided at an inner side of the tub to accommodate laundry, a driving apparatus to rotate the drum, protrusions that are formed of polygons having polygonal shapes and protruding inward from the drum, and a through-hole provided between adjacent protrusions to drain water. A protrusion having polygons generates frictional force between laundry and the drum, thereby increasing the washing power. The through-holes are uniformly located around the protrusion, thereby preventing a spin dry water bottleneck phenomenon that occurs when water from a spin dry is concentrated on a certain through-hole, and thus enhancing the spin dry efficiency.

Abstract: A washing machine including a washing tub to allow enhancement in washing efficiency. A washing tub of the washing machine includes a pattern having a protrusion portion to generate friction force between laundry and the washing tub and to thereby increase washing efficiency. The pattern has a concave-convex structure and performs action similar to a lifter, washing efficiency may be enhanced using tumbling generated by the pattern. A plurality of drain holes are arranged in a certain pattern in the washing tub to prevent a dehydration bottleneck phenomenon in which dehydration is concentrated at a particular drain hole and to increase a dehydration rate. The pattern is provided such that protrusion portions and recessed portions continue on the surface of the washing tub to enhance stiffness of the washing tub.

Abstract: A semiconductor device is provided. The semiconductor includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked in a first direction on a substrate. The plurality of interlayer insulating layers and the plurality of gate electrodes constitute a side surface extended in the first direction. A gate dielectric layer is disposed on the side surface. A channel pattern is disposed on the gate dielectric layer. The gate dielectric layer includes a protective pattern, a charge trap layer, and a tunneling layer. The protective pattern includes a portion disposed on a corresponding gate electrode of the plurality of gate electrodes. The charge trap layer is disposed on the protective pattern. The tunneling layer is disposed between the charge trap layer and the channel pattern. The protective pattern is denser than the charge trap layer.

Abstract: Provided is an apparatus and method for synchronizing content with data that may extract content feature information of the content, and control synchronization by comparing the content feature information and data feature information described in the data.

Abstract: A method of forming a polysilicon layer includes providing a silicon precursor onto an object loaded in a process chamber to form a seed layer. The silicon precursor includes a nitrogen containing silicon precursor and a chlorine containing silicon precursor. The method further includes providing a silicon source on the seed layer.

Abstract: A hermetic compressor for adjusting the length and cross sectional area of a communication path as a refrigerant flow passage, so as to attenuate a discharge pulsation and consequently, a vibration and noise thereof. The hermetic compressor, which includes a cylinder head having a discharge chamber to discharge a compressed refrigerant and a discharge muffler to receive the refrigerant discharged from the discharge chamber, further includes a communication path to communicate the discharge chamber and the discharge muffler with each other, so as to allow the refrigerant to flow from the discharge chamber into the discharge muffler, and an auxiliary communication tube to increase a length of the communication path for increasing a refrigerant flow distance. The auxiliary communication path reduces the cross sectional area of a refrigerant flow passage while increasing a refrigerant flow distance, thereby attenuating a low-frequency component of the discharge pulsation.

Abstract: A vertical memory device may include a substrate, a first selection line on the substrate, a plurality of word lines on the first selection line, a second selection line on the plurality of word lines, and a semiconductor channel. The first selection line may be between the plurality of word lines and the substrate, and the plurality of word lines may be between the first and second selection lines. Moreover, the first and second selection lines and the plurality of word lines may be spaced apart in a direction perpendicular with respect to a surface of the substrate. The semiconductor channel may extend away from the surface of the substrate adjacent sidewalls of the first and second selection lines and the plurality of word lines. In addition, portions of the semiconductor channel adjacent the second selection line may be doped with indium and/or gallium. Related methods are also discussed.

Abstract: Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.

Abstract: A washing machine includes a rotary tub having a diameter progressively increasing from a first end side thereof to a second end side thereof located opposite the first end side, dehydration holes arranged at the second end side of the rotary tub, and a dehydration hole switching unit to open and close the dehydration holes. The dehydration holes are opened depending on increase of a rate of rotation of the rotary tub.

Abstract: A washing machine includes a cabinet, a rotary tub disposed to rotate around a driving shaft, which is vertically provided inside the inner part of the cabinet, and comprising a bottom and a sidewall, the sidewall slantingly extending from the bottom to have a diameter increasing toward an upper side of the rotary tub from the bottom, a driving apparatus disposed at a lower side of the rotary tub to rotate the rotary tub, a bracket plate connected to the rotary tub by the driving shaft at the lower side of the rotary tub and having the driving apparatus provided at a lower side thereof, a base disposed at a lower side of the bracket plate, and a suspension member having a lower side supported by the base and an upper side connected to the bracket plate at a lateral side of a center of gravity of the rotary tub.

Abstract: A washing machine having an improved structure which increases washing capacity without increasing the size of the washing machine. The washing machine includes a cabinet including an outer part and a cylindrical inner part connected to the outer part, a spin basket rotatably disposed in the inner part and including a bottom and a side wall extending from the bottom, a pulsator rotatably disposed in the spin basket, a motor provided under the spin basket, a clutch to selectively transmit power of the motor to the spin basket or the pulsator, a base plate to fix the clutch and the motor, and suspension members connecting the base plate to the upper portion of the cabinet. Wash water is stored within the spin basket and is not stored outside the spin basket during a washing cycle.

Abstract: An apparatus and method for injecting synchronized stream data into a Motion Picture Experts Group 2 (MPEG-2) video/audio transport stream for a digital data broadcasting service. The apparatus and method for injecting synchronized stream data calculate the injection time point of data access unit (DAU) that forms the synchronized stream data and injects DAU into the MPEG-2 video/audio transport stream based on the calculated injection time point so that the synchronized stream data could be presented smoothly in a receiver. The synchronized stream data injecting apparatus includes: an additional data storing unit, a synchronized stream data selection/establishment unit, a synchronized stream data analyzing unit, a transport stream analyzing unit, a synchronized stream data injection/management unit, a presentation time stamp re-stamping unit and a multiplexing unit.

Abstract: Disclosed is an adaptive receiving MIMO (multi input and multi output) system and method which decides a symbol detecting order so as to estimate the symbol having the minimum summation of weights of least square errors at the time of estimating the symbol for respective equalizers provided in parallel by the number of transmit antennas, and updates filter tap coefficients based on the RLS algorithm according to the detecting orders. Therefore, the filter tap coefficients are directly updated without tracking channels in the time-varying channel environment, and accordingly, detection performance very similar to those of the channel tracking and conventional V-BLAST scheme is provided with reduced complexity.