Abstract: An antenna module includes a wiring structure including a plurality of insulating layers, a plurality of wiring layers, and a plurality of via layers; an antenna disposed on an upper surface of the wiring structure; a heat dissipation structure disposed around the antenna on the upper surface of the wiring structure; and an encapsulant disposed on the upper surface of the wiring structure and covering at least a portion of each of the antenna and the heat dissipation structure.

Abstract: The present disclosure relates to a printed circuit board. The printed circuit board includes a core layer; a through portion penetrating through the core layer; a first via disposed to be spaced apart from an inner wall of the through portion within the through portion; and a second via disposed in the first via and having a diameter different from that of the first via.

Abstract: A light-emitting diode (LED) lamp for a vehicle and a method of manufacturing the same use MID and magnetic induction technologies. The LED lamp includes a LED module, a housing accommodating the LED module, and a molded interconnect device (MID) electrode formed on a surface of the housing. The LED module may be mounted on the MID electrode by soldering using magnetic induction heating, the housing may be an injection molded product, and the MID electrode may be formed on the housing using a MID process.

Abstract: A printed circuit board includes a first insulating layer having a first modulus; a second insulating layer disposed on the first insulating layer and having a second modulus; and a cavity penetrating the second insulating layer, wherein the second modulus is greater than the first modulus, and wherein an edge portion of a bottom surface of the cavity is formed of an insulating material.

Abstract: A substrate structure includes a first printed circuit board having a first side and a second side opposing each other, and a plurality of passive components connected to the first side of the first printed circuit board. The plurality of passive components includes a first group, including a plurality of first passive components disposed adjacent to each other, and a second group, including a plurality of second passive components disposed adjacent to each other. A smallest distance between the first and second groups is greater than at least one of a smallest distance between adjacent first passive components of the plurality of first passive components and a smallest distance between adjacent second passive components of the plurality of second passive components. An electronic device includes a first printed circuit board disposed on a mainboard and having, on opposite sides thereof, a semiconductor chip and a plurality of passive components.

Abstract: There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes a lower stack structure on the substrate and including a plurality of lower layers stacked in a vertical direction, an intermediate stack structure on the lower stack structure and including a plurality of intermediate layers stacked in the vertical direction, a plurality of grooves in the contact region and penetrating the intermediate stack structure, the plurality of grooves exposing the lower stack structure at different depths, and a plurality of steps formed along sidewalls of the grooves.

Abstract: The present disclosure relates to a method for providing guidance on a use period of a sensor and, more specifically, to a method for providing guidance on a use period of a sensor, which accurately provides guidance to a user about a use period of a sensor by calculating the number of sensors possessed by the user and the total use period from the use period of each sensor so as to determine whether the remaining use period has arrived at an order guidance period or to determine whether the remaining use period of the last sensor has arrived at the order guidance period, on the basis of a sensor usage history of the user, and enable the user to order sensors on the basis of the guidance.

Abstract: An antenna module includes a wiring structure including a plurality of insulating layers, a plurality of wiring layers, and a plurality of via layers; an antenna disposed on an upper surface of the wiring structure; a heat dissipation structure disposed around the antenna on the upper surface of the wiring structure; and an encapsulant disposed on the upper surface of the wiring structure and covering at least a portion of each of the antenna and the heat dissipation structure.

Abstract: A flexible printed circuit board includes a base film; a circuit pattern disposed on one surface of the base film; and a coverlay film covering the circuit pattern. The base film is divided into a flexible area and a rigid area, and the circuit pattern of the flexible area comprises a portion thinner than a portion of the circuit pattern of the rigid area.

Abstract: A printed circuit board includes a first insulating layer, a second insulating layer disposed on a lower surface of the first insulating layer, an electronic component embedded in the second insulating layer and at least partially in contact with the first insulating layer, a first wiring layer disposed on an upper surface of the first insulating layer, a second wiring layer disposed on a lower surface of the second insulating layer, and a first wiring via penetrating through the first and second insulating layers and connecting at least portions of the first and second wiring layers to each other.

Abstract: A printed circuit board includes a first insulating layer having a first modulus; a second insulating layer disposed on the first insulating layer and having a second modulus; and a cavity penetrating the second insulating layer, wherein the second modulus is greater than the first modulus, and wherein an edge portion of a bottom surface of the cavity is formed of an insulating material.

Abstract: An antenna module includes a wiring structure including a plurality of insulating layers, a plurality of wiring layers, and a plurality of via layers; an antenna disposed on an upper surface of the wiring structure; and an encapsulant disposed on the upper surface of the wiring structure and covering at least a portion of the antenna. An uppermost wiring layer of the plurality of wiring layers is connected to the antenna through a connection via of an uppermost via layer of the plurality of via layers. The connection via penetrates at least a portion of the encapsulant.

Abstract: A method for pruning weights of an artificial neural network based on a learned threshold includes determining a pruning threshold for pruning a first set of pre-trained weights of multiple pre-trained weights based on a function of a classification loss and a regularization loss. Weights are pruned from the first set of pre-trained weights when a first value of the weight is less than the pruning threshold. A second set of pre-trained weights of the multiple pre-trained weights is fine-tuned or adjusted in response to a second value of each pre-trained weight in the second set of pre-trained weights being greater than the pruning threshold.

Abstract: A semiconductor package includes: a semiconductor chip including a front end of line (FEOL) layer and a first back end of line (BEOL) layer disposed on the FEOL layer; and a printed circuit board including a wiring layer and a second BEOL layer disposed on the wiring layer, wherein the semiconductor chip is mounted on the printed circuit board so that the first and second BEOL layers are connected to each other while facing each other, and the second BEOL layer includes a wiring for power transmission.

Abstract: There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes a lower stack structure on the substrate and including a plurality of lower layers stacked in a vertical direction, an intermediate stack structure on the lower stack structure and including a plurality of intermediate layers stacked in the vertical direction, a plurality of grooves in the contact region and penetrating the intermediate stack structure, the plurality of grooves exposing the lower stack structure at different depths, and a plurality of steps formed along sidewalls of the grooves.

Abstract: There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes a lower stack structure on the substrate and including a plurality of lower layers stacked in a vertical direction, an intermediate stack structure on the lower stack structure and including a plurality of intermediate layers stacked in the vertical direction, a plurality of grooves in the contact region and penetrating the intermediate stack structure, the plurality of grooves exposing the lower stack structure at different depths, and a plurality of steps formed along sidewalls of the grooves.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery including the same, and more particularly, to a positive electrode active material including a lithium composite oxide containing at least nickel and cobalt, wherein since the cobalt in the lithium composite oxide has a concentration gradient having at least different slopes from a surface portion toward a central portion, it is possible to improve the stability of particles not only in a surface portion of the lithium composite oxide but also in a central portion thereof, a positive electrode including the positive electrode active material, and a lithium secondary battery using the negative electrode.

Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery including the same, and more particularly, to a bimodal-type positive electrode active material including a first lithium composite oxide as a small particle and a second lithium composite oxide as a large particle, wherein the positive electrode active material may uniformly improve the particle stability of the small particle and the large particle by controlling a slope of a concentration gradient in which cobalt in the small particle and the large particle decreases from a surface portion toward a central portion, a positive electrode including the positive electrode active material, and a lithium secondary battery using the positive electrode.

Abstract: The present invention relates to ZIF nanoparticles introduced with three kinds of ligands, a method for preparing the same, a hybrid membrane including the same, and a gas separation method using the hybrid membrane. Nanoparticles of a zeolitic imidazolate framework (ZIF) into which three kinds of ligands are introduced, the nanoparticles comprising metal ions, and an organic ligand bound to the metal ion, wherein the organic ligand comprises an imidazole-based first organic ligand, alkylamine-based second organic ligand, and third organic ligand comprising at least one amine group substituted on the ring.

Abstract: A substrate embedded electronic component package includes a core member having a cavity in which a metal layer is disposed on a bottom surface thereof, an electronic component disposed in the cavity, an encapsulant filling at least a portion of the cavity and covering at least a portion of each of the core member and the electronic component, and a connection structure disposed on the encapsulant and including a first wiring layer connected to the electronic component. A wall surface of the cavity has at least one groove portion protruding outwardly from a center of the cavity, and the groove portion extends to a same depth in the core member as a depth of the cavity.