Abstract: There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes a lower stack structure on the substrate and including a plurality of lower layers stacked in a vertical direction, an intermediate stack structure on the lower stack structure and including a plurality of intermediate layers stacked in the vertical direction, a plurality of grooves in the contact region and penetrating the intermediate stack structure, the plurality of grooves exposing the lower stack structure at different depths, and a plurality of steps formed along sidewalls of the grooves.

Abstract: Certain aspects of the present disclosure provide techniques for improved machine learning using gradient pruning, comprising computing, using a first batch of training data, a first gradient tensor comprising a gradient for each parameter of a parameter tensor for a machine learning model; identifying a first subset of gradients in the first gradient tensor based on a first gradient criteria; and updating a first subset of parameters in the parameter tensor based on the first subset of gradients in the first gradient tensor.

Abstract: A transmission device of point cloud data and method performed by the transmission device, and a reception device and a method performed by the reception device are provided. A method performed by a reception device of point cloud data comprises acquiring geometry-based point cloud compression (G-PCC) file including the point cloud data, wherein the G-PCC file includes information on a sample group in which samples in the G-PCC file are grouped based on one or more temporal levels and wherein the G-PCC file further includes information on the temporal levels, and extracting one or more samples belonging to a target temporal level from the samples in the G-PCC file based on the information on the sample group and the information on the temporal levels.

Abstract: There are provided a semiconductor memory device and a manufacturing method of the semiconductor memory device. A semiconductor memory device includes a lower stack structure on the substrate and including a plurality of lower layers stacked in a vertical direction, an intermediate stack structure on the lower stack structure and including a plurality of intermediate layers stacked in the vertical direction, a plurality of grooves in the contact region and penetrating the intermediate stack structure, the plurality of grooves exposing the lower stack structure at different depths, and a plurality of steps formed along sidewalls of the grooves.

Abstract: Provided are a method and device for controlling a wind speed parameter of a wind-based power generation facility which include a memory; and a processor connected to the memory, wherein the processor is configured to: receive a first wind speed corresponding to an average wind speed per a preset time interval from a first real-world wind-based power generation facility installed in a real world, and receive therefrom a first power generation amount as generated per the preset time interval; generate a first dataset representing a power generation amount based on a change in a wind speed, based on the first wind speed and the first power generation amount; calculate a first power coefficient related to the first power generation amount based on each first wind speed, based on the first data set.

Abstract: The present invention relates to a method for managing biometric information and, more specifically, to a method for managing biometric information capable of preventing a use of a sensor module of which an expiration date has expired or a defective sensor module, by determining the validity of a sensor module of a continuous biometric information measuring device on the basis of the generation date of sensor usage information or production lot information received from the continuous biometric information measuring device, and preventing re-use or shared use of the sensor module on the basis of user information provided in a measurement message received from the continuous biometric information measuring device.

Abstract: A light-emitting diode (LED) lamp for a vehicle and a method of manufacturing the same use MID and magnetic induction technologies. The LED lamp includes a LED module, a housing accommodating the LED module, and a molded interconnect device (MID) electrode formed on a surface of the housing. The LED module may be mounted on the MID electrode by soldering using magnetic induction heating, the housing may be an injection molded product, and the MID electrode may be formed on the housing using a MID process.

Abstract: A coil component includes a body, a support portion disposed in the body, a coil portion disposed on a first surface of the support portion, a lead portion disposed on a second surface of the support portion facing the first surface of the support portion and connected to the coil portion, and a via penetrating through the support portion to connect an inner end portion of the coil portion and an inner end portion of the lead portion to each other, wherein the coil portion includes a first conductive layer embedded in the support portion and having a first surface exposed to or facing the first surface of the support portion, a second conductive layer disposed on the first surface of the first conductive layer, and a third conductive layer disposed on the second conductive layer and protruding from the first surface of the support portion.

Abstract: An optical disc unit for an ultraviolet sterilizer, which is applied to the ultraviolet sterilizer, includes an ultraviolet light emitting diode (LED) to reflect light irradiated from the ultraviolet LED, including a body portion including a hollow and a primary optical unit fixedly coupled to an internal diameter surface in the hollow of the body portion and disposed in a direction perpendicular to an emission surface of the ultraviolet LED to reflect light irradiated from the ultraviolet LED, and according to an exemplary embodiment of the present disclosure, it is possible to enhance a sterilization ability by increasing a beam angle of light irradiated from the ultraviolet LED and uniformly irradiating the light and also reduce a risk of light leakage to the outside in a space to which the ultraviolet LED is applied.

Abstract: A coil component includes a body, a support substrate disposed within the body, a lead portion disposed on a first surface of the support substrate, a first insulating layer disposed on the first surface of the support substrate to cover the lead portion, a coil unit including a plurality of turns disposed on the first insulating layer, a second insulating layer covering the coil unit, and first and second external electrodes spaced apart from each other on the body, and connected to the coil unit and the lead portion, respectively.

Abstract: A display device for performing a sensing operation according to an embodiment of the present inventive concept includes a pixel unit including pixel circuits each including a light emitting element, a driving transistor, a switching transistor, and a sensing control transistor connected between an anode electrode and an initialization power source; a scan driver connected to the pixel circuits through horizontal lines and sequentially outputting scan signals and sensing control signals; and a sensing unit configured to sense voltages or current of first nodes each disposed between an anode electrode and a driving transistor. The scan driver simultaneously outputs the sensing control signals to the horizontal lines at every predetermined discharge cycle.

Abstract: Various embodiments include methods and devices for implementing automatic grammar augmentation for improving voice command recognition accuracy in systems with a small footprint acoustic model. Alternative expressions that may capture acoustic model decoding variations may be added to a grammar set. An acoustic model-specific statistical pronunciation dictionary may be derived by running the acoustic model through a large general speech dataset and constructing a command-specific candidate set containing potential grammar expressions. Greedy based and cross-entropy-method (CEM) based algorithms may be utilized to search the candidate set for augmentations with improved recognition accuracy.

Abstract: A printed circuit board includes a first substrate portion including a plurality of first insulating layers, a plurality of first wiring layers respectively disposed on the plurality of first insulating layers, and a plurality of first adhesive layers respectively disposed between the plurality of first insulating layers to respectively cover the plurality of first wiring layers; and a second substrate portion disposed on the first substrate portion, and including a plurality of second insulating layers, a plurality of second wiring layers respectively disposed on the plurality of second insulating layers, and a plurality of second adhesive layers respectively disposed between the plurality of second insulating layers to respectively cover the plurality of second wiring layers.

Abstract: A display device for performing a sensing operation according to an embodiment of the present inventive concept includes a pixel unit including pixel circuits each including a light emitting element, a driving transistor, a switching transistor, and a sensing control transistor connected between an anode electrode and an initialization power source; a scan driver connected to the pixel circuits through horizontal lines and sequentially outputting scan signals and sensing control signals; and a sensing unit configured to sense voltages or current of first nodes each disposed between an anode electrode and a driving transistor. The scan driver simultaneously outputs the sensing control signals to the horizontal lines at every predetermined discharge cycle.

Abstract: Provided herein are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes an etch stop pattern having a top surface and a sidewall disposed over a gate stack having interlayer insulating layers alternately stacked with conductive patterns. The semiconductor device also includes a plurality of channel structures passing through the etch stop pattern and the gate stack. The semiconductor device further includes an insulating layer extending to cover the top surface and the sidewall of the etch stop pattern, wherein a depression is included in a sidewall of the insulating layer. The semiconductor device additionally includes a contact plug passing through the insulating layer so that the contact plug is coupled to a channel structure of the plurality of channel structures.

Abstract: A printed circuit board includes a substrate, a first pad and a second pad, respectively disposed on an upper side of the substrate, a first socket disposed in the substrate and including a first circuit, and a first trace disposed in the substrate and disposed between the first and second pads and the first socket with respect to a lamination direction. At least a portion of the first circuit is electrically connected to each of the first and second pads, and is electrically connected to the second pad through a path passing through the first trace.

Abstract: A semiconductor device including a plurality of active regions extending in a first direction on a substrate; a device isolation layer between the plurality of active regions such that upper portions of the plurality of active regions protrude from the device isolation layer; a first gate electrode and a second gate electrode extending in a second direction crossing the first direction and intersecting the plurality of active regions, respectively, on the substrate, the first gate electrode being spaced apart from the second gate electrode in the second direction; a first gate separation layer between the first gate electrode and the second gate electrode; and a second gate separation layer under the first gate separation layer and between the first gate electrode and the second gate electrode, the second gate separation layer extending into the device isolation layer in a third direction crossing the first direction and the second direction.

Abstract: The present invention relates to a method for detecting a leakage current during use of a biometric data measuring device, and more particularly, a method is provided whereby it is possible to detect whether there is a leakage in a current applied to a sensor in a state of measuring biometric data while a part of the sensor is inserted into the user's skin, by comparing the difference in magnitude between an applied current applied via one terminal of the sensor, which is comprised in the biometric data measuring device, and an output current output via the other terminal of the sensor.

Abstract: Provided herein are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes an etch stop pattern having a top surface and a sidewall disposed over a gate stack having interlayer insulating layers alternately stacked with conductive patterns. The semiconductor device also includes a plurality of channel structures passing through the etch stop pattern and the gate stack. The semiconductor device further includes an insulating layer extending to cover the top surface and the sidewall of the etch stop pattern, wherein a depression is included in a sidewall of the insulating layer. The semiconductor device additionally includes a contact plug passing through the insulating layer so that the contact plug is coupled to a channel structure of the plurality of channel structures.

Abstract: A semiconductor device includes a source structure penetrated by a first penetrating portion, a first stack structure disposed on the source structure and penetrated by a second penetrating portion overlapping the first penetrating portion.