Abstract: A base station may instruct a UE to use at least one weighting factor associated with a CR for the UE, and the UE may apply the at least one weighting factor to the one or more resources scheduled for the PSSCH transmission to determine the CR. The UE may transmit the PSSCH in the one or more resources of the at least one slot based on the determined CR being less than or equal to a CR threshold value. The at least one weighting factor may be applied to the one or more resources in each of multiple slots scheduled for transmission of a PSSCH.

Abstract: The present disclosure generally relates to a dual free layer two dimensional magnetic recording read head. The read head comprises a first lower shield, a first sensor disposed over the first lower shield, a first upper shield disposed over the first sensor, a read separation gap (RSG) disposed on the first upper shield, a second lower shield disposed over the RSG, a second sensor disposed over the second lower shield, and a second upper shield disposed over the second sensor. In some embodiments, the second lower shield comprises a CoFeHf layer. In another embodiment, the second lower shield is a synthetic antiferromagnetic multilayer comprising a first shield layer, a second shield layer, and a CoFe/Ru/CoFe anti-ferromagnetic coupling layer or a Ru layer disposed therebetween, the first and second shield layers comprising NiFe and CoFe. In yet another embodiment, the second lower shield comprises layers of Ru, IrMn, and NiFe.

Abstract: A modulation device includes a substrate, an electrostatic discharge protection element, an electronic element, and a driving element. The substrate has an active region. The electrostatic discharge protection element is arranged around the active region. The electronic element is disposed in the active region. The driving element is electrically connected to the electronic element.

Abstract: A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.

Abstract: A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A display is provided. The display device includes a display area and a non-display area located around the display area; a base layer; an organic light-emitting diode (OLED) that is located on the base layer in the display area; and a first crack detection line that is located on the base layer in the non-display area; wherein the first crack detection line comprises a first line that extends substantially in a first direction along a first edge of the display area, a second line that is separated from the first line and extends substantially in the first direction, and a third line that is connected to an end of the first line and an end of the second line, wherein a cross-sectional shape of the first line in a second direction crossing the first direction is inversely tapered.

Abstract: An artificial shuttlecock includes a ball head, a plurality of feathers, and a plurality of stems. Each of the feathers includes a notch. The notch is disposed on an outer edge of the feather. A ball head end of the stem is connected to the ball head, and a feather end is connected to the feather. The stem includes a body, which tapers from the end close to the ball end to the feather end. The end of the body close to the ball end has a first width, and the body has a second width at the feather. The first width is between 2.1 mm and 2.4 mm, and the second width is between 0.4 mm and 0.6 mm.

Abstract: A switching regulator includes: a power stage circuit; a control circuit; and an operation clock signal generator circuit configured to generate plural test clock signals during a clock determination period and generate an operation clock signal during a normal operation period. When the switching regulator operates during the clock determination period in a discontinuous conduction mode, the control circuit alternatingly generates plural PWM signals corresponding to the test clock signals generated by the operation clock signal generator circuit and an output voltage, wherein each PWM signal corresponds to one test clock signal, so that the power stage circuit generates corresponding phase node voltages at a phase node, wherein among the plural test clock signals, the operation clock signal generator circuit selects one test clock signal corresponding to a minimum phase node voltage as the operation clock signal during the normal operation period.

Abstract: This disclosure provides systems, methods, and apparatuses, including computer programs encoded on computer storage media, for wireless communication, including techniques for sidelink resource allocation and communication. In some aspects, a user equipment (UE) may receive from a base station a single message that indicates a first transmission opportunity for transmission of information from the UE to a second UE and that indicates one or more additional transmission opportunities for at least one subsequent transmission of information from the UE to the second UE. The UE may transmit the information to the second UE in the first transmission opportunity. The UE may also retransmit the information to the second UE in at least one of the one or more additional transmission opportunities responsive to the transmission of the information in the first transmission opportunity being unsuccessful. Other aspects and features are also claimed and described.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: Certain aspects of the present disclosure provide techniques for determining and using channel ratio metrics for beamformed communication. A method that may be performed by a user equipment (UE) includes selecting a first beam of a plurality of beams for determining one or more channel ratio metrics, determining the one or more channel ratio metrics for the first beam, wherein determining the one or more channel ratio metrics is based, at least in part, on an angular separation between the first beam and one or more neighboring beams of the plurality of beams, and transmitting signaling via the first beam based on the one or more channel ratio metrics.

Abstract: A method of manufacturing a waffle slab includes providing a bottom mold separately on columns and exposing joint heads of the columns from the bottom mold; providing first sets of beam bars separately on the bottom mold to be parallel along a first direction; and providing second sets of beam bars separately on the bottom mold to be parallel along a second direction, wherein the second sets b of beam bars are configured to intersect with the first sets of beam bars without interference and together they form accommodation spaces for waffle molds.

Abstract: Methods, systems, and devices for wireless communications are described. In some examples, a first UE may receive an indication of first resources from a second UE. In some examples, the second UE may be a UE configured to receive a transmission from a third UE over the first resources. In some such examples, the first UE may transmit, to a fourth UE, a sidelink transmission over available resources that exclude the first resources. Additionally, or alternatively, the second UE may be a UE that received sidelink control information from the third UE indicating the resources for transmission by the third UE to a fourth UE. In some such examples, the first UE may transmit, to the second UE, a sidelink transmission over available resources that exclude the first resources.

Abstract: A battery module for monitoring and suppressing battery swelling and interacting with a charging device includes a battery cell disposed in a nonconductive housing, a conductive label affixed to the nonconductive housing, a switch, and a controller. The battery cell is charged via a supply voltage from a charging device. The switch is coupled between the battery cell and the conductive label. The controller detects a resistance variation value ?R of the conductive label as result of swelling of the nonconductive housing, and generates a corresponding control voltage. As the resistance of the conductive label increases, the supply voltage may be adjusted downward according to the control voltage. If the resistance variation value ?R conductive label is greater than or equal to a predetermined threshold, the controller closes the switch, and the battery cell may then fully discharge through the conductive label.

Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: A heterogeneous integration semiconductor package structure including a heat dissipation assembly, multiple chips, a package assembly, multiple connectors and a circuit substrate is provided. The heat dissipation assembly has a connection surface and includes a two-phase flow heat dissipation device and a first redistribution structure layer embedded in the connection surface. The chips are disposed on the connection surface of the heat dissipation assembly and electrically connected to the first redistribution structure layer. The package assembly surrounds the chips and includes a second redistribution structure layer disposed on a lower surface and multiple conductive vias electrically connected to the first redistribution structure layer and the second redistribution structure layer. The connectors are disposed on the package assembly and electrically connected to the second redistribution structure layer.