Abstract: A memory cell of a charge-trapping non-volatile memory includes a semiconductor substrate, a well region, a first doped region, a second doped region, a gate structure, a protecting layer, a charge trapping layer, a dielectric layer, a first conducting line and a second conducting line. The first doped region and the second doped region are formed under a surface of the well region. The gate structure is formed over the surface of the well region. The protecting layer formed on the surface of the well region. The charge trapping layer covers the surface of the well region, the gate structure and the protecting layer. The dielectric layer covers the charge trapping layer. The first conducting line is connected with the first doped region. The second conducting line is connected with the second doped region.

Abstract: A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate, and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is lower than a top surface of the fin-shaped structure.

Abstract: A light diffuser includes a main body and first fillers. The first fillers are dispersed in the main body. The first fillers include at least one of ZrO2, Nb2O5, Ta2O5, SixNy, Si, Ge GaP, InP, and PbS, and a diameter of each of the first fillers is in a range from 0.1 ?m to 1 ?m.

Abstract: A cleaning robot includes a main body and a cleaning module. The main body is configured to move on a floor along a travelling direction. The cleaning module includes a first shaft and some first roller sets. The first shaft is connected with the main body. The first shaft extends along a first axis perpendicular to the travelling direction. The first roller sets are separated from each other. Each first roller set includes a first bearing, a first tire and a first flexible structure. The first shaft penetrates through the first bearing. The first tire includes a first cleaning surface configured to abut against the floor. The first flexible structure includes a first inner surface and a first outer surface. The first inner surface abuts against the first bearing. The first outer surface abuts against the first tire. The first flexible structure has a first elasticity.

Abstract: The disclosure discloses a structure of high-voltage (HV) transistor which includes a substrate. An epitaxial doped structure with a first conductive type is formed in the substrate, wherein a top portion of the epitaxial doped structure includes a top undoped epitaxial layer. A gate structure is disposed on the substrate and at least overlapping with the top undoped epitaxial layer. A source/drain (S/D) region with a second conductive type is formed in the epitaxial doped structure at a side of the gate structure. The first conductive type is different from the second conductive type.

Abstract: A high voltage transistor structure including a substrate, a first drift region, a second drift region, a first cap layer, a second cap layer, a gate structure, a first source and drain region, and a second source and drain region is provided. The first and second drift regions are disposed in the substrate. The first and second cap layers are respectively disposed on the first and second drift regions. The gate structure is disposed on the substrate and located over at least a portion of the first drift region and at least a portion of the second drift region. The first and second source and drain regions are respectively disposed in the first and second drift regions and located on two sides of the gate structure. The size of the first drift region and the size of the second drift region are asymmetric.

Abstract: An optical mechanism is provided, including a base module, an optical element, and a ball element. The base module has a frame, a substrate movably disposed in the frame, and an image sensor disposed on the substrate. The optical element is movably connected to the base module, and light propagates through the optical element to the image sensor to generate a digital image. The ball element is disposed between the frame and the substrate, whereby the image sensor and the substrate are movable relative to the frame along a first axis that is perpendicular to an optical axis of the optical element.

Abstract: This application provides a structure of the optical sensor, in which a photosensitive element is arranged on a substrate, a colloid layer is arranged on the upper part of the substrate and covers the photosensitive element, and a thin film is further arranged. The device includes an adhesive layer and a light-transmitting layer, the adhesive layer is disposed above one of the colloid layers, the light-transmitting layer is disposed above one of the adhesive layers, and the structure can be used to provide the film member that can be changed according to requirements The optical design reduces the production cost of the optical sensor; this application further provides a shielding layer between the film member and the colloid layer to improve the photosensitive efficiency of the optical sensor.

Abstract: The invention relates to a millisecond gasification method to fabricate graphene membranes, yielding a molecular sieving resolution of 0.2 ? for selective gas separation, and further relates to a method of preparation and uses thereof. In particular, the invention relates to the graphene membranes that have large CO2 permeances combined with attractive CO2/N2 and CO2/CH4 selectivity.

Abstract: A bipolar plate for a fuel cell is provided. The bipolar plate is formed by pressing a base plate, wherein the base plate is formed by a soft graphite plate. The soft graphite plate has a density of 0.8-1.3 g/cm3, a carbon content more than 98% and an ash content less than 2%. Based on the thickness of the base plate before pressing, the thickness compression ratio of the bipolar plate is 40-50%.

Abstract: A structure of semiconductor device is provided, including a substrate. First and second trench isolations are disposed in the substrate. A height of a portion of the substrate is between a top and a bottom of the first and second trench isolations. A gate insulation layer is disposed on the portion of the substrate between the first and second trench isolations. A first germanium (Ge) doped layer region is disposed in the portion of the substrate just under the gate insulation layer. A second Ge doped layer region is in the portion of the substrate, overlapping with the first Ge doped layer region to form a Ge gradient from high to low along a depth direction under the gate insulation layer. A fluorine (F) doped layer region is in the portion of the substrate, lower than and overlapping with the first germanium doped layer region.

Abstract: An image capturing mechanism is provided, including a base module, a ball element, and a movable module. The base module has a frame, a substrate movably disposed in the frame, and an image sensor disposed on the substrate. The ball element is disposed between the frame and the substrate, whereby the image sensor and the substrate are movable relative to the frame. The movable module is configured to hold an optical element and is movably connected to the base module.

Abstract: A composition and method for etching molybdenum-containing film on a microelectronic device substrate is provided. A microelectronic device substrate is contacted with the composition of the invention for a time sufficient to at least partially remove the molybdenum-containing film. The composition comprises at least one oxidizing agent, at least one complexing agent, at least one cationic surfactant, and has a pH of from about 7.5 to about 13. The etchant composition selectively removes molybdenum at an etch rate of about 20 to 50 ?/minute at room temperature, with improved uniformity of removal.

Abstract: Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.

Abstract: A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.

Abstract: A biosensor is provided. The biosensor includes a substrate, photodiodes, pixelated filters, an excitation light rejection layer and an immobilization layer. The substrate has pixels. The photodiodes are disposed in the substrate and correspond to one of the pixels, respectively. The pixelated filters are disposed on the substrate. The excitation light rejection layer is disposed on the pixelated filter. The immobilization layer is disposed on the excitation light rejection layer.

Abstract: The present invention provides a method for controlling a data storage device. The data storage device includes a flash memory controller and a flash memory module. The flash memory controller has a first buffer memory and a second buffer memory. The memory module has at least a first memory portion and a second memory portion. The method includes: receiving a first data from a host device; storing the first data in the first buffer memory; transmitting the first data to the first memory portion of the flash memory module from the first buffer memory; and transmitting the first data to a host memory buffer in the host device from the first buffer memory. The first data corresponds to at least a portion of a second data to be written to the second memory portion.

Abstract: A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.

Abstract: A shutter is provided near the immediate focus of a lithography apparatus in order to deflect tin debris generated by a source side of the apparatus away from a scanner side of the apparatus and towards a debris collection device. The activation of the shutter is synchronized with the generation of light pulses so as not to block light from entering the scanner side.