Abstract: A FET with a fin structure includes a substrate, an isolation structure and a gate structure. The substrate includes at least one fin structure. The fin structure includes two source/drain regions and a gate channel region between the two source/drain regions. The isolation structure is disposed on the substrate and surrounds the fin structure to expose an upper portion of the fin structure. A width of the gate channel region of the exposed upper portion of the fin structure is less than each of widths of the source region and the drain region. A gate structure covering two sidewalls of the gate channel region of the exposed upper portion of the fin structure is formed. Two sidewalls of the gate structure contact two facing sidewalls of the two source/drain regions, respectively.

Abstract: A display mode adjusting method and a display mode adjusting module executing the adjusting method are provided. The method includes the following steps: generating a saturation adjusting output color according to an input color to adjust the saturation; obtaining a relative color temperature adjusting parameter according to a target color temperature and an original optical characteristic of a display device; generating a color temperature adjusting output color according to the saturation adjusting output color and the relative color temperature adjusting parameter to adjust the color temperature; obtaining a brightness adjustment value according to the brightness of ambient light to adjust the brightness. Therefore, the display mode of the display device is adjusted to suitable for reading, which avoids the eyestrain when the users read for a long time.

Abstract: A method of fabricating a field effect transistor with a fin structure is described. At least a fin structure is formed on a substrate. A planar insulation layer covering the fin structure is formed. A trench is formed in the insulation layer and intersects the fin structure both lengthwise. The trench is disposed over portions of the fin structure, and a lengthwise direction of the trench intersects a lengthwise direction of the fin structure, and thereby an upper portion of the fin structure is exposed to the trench. The exposed upper portion of the fin structure will serve as a gate channel region. A gate structure covering the upper portion is formed within the trench. The upper portion of the fin structure may be further trimmed.

Abstract: One or more systems and techniques for managing one or more electronic devices are provided. A determination is made that a first capacitor in a set of one or more capacitors has a defect. Responsive to the determination, the first capacitor is disabled, and a second capacitor is enabled.

Abstract: Disclosed is a paper battery that includes a cellulosic substrate having absorbed thereon an electrolyte material and first and second barrier substrates disposed on opposite sides of the cellulosic substrate. Each of the first and second barrier substrates have an electrode printed thereon. At least one of the first and second barrier substrates includes first and second polymer layers. Further disclosed is a method of manufacturing a paper battery that includes the steps of absorbing an electrolyte material onto a cellulosic substrate and disposing on opposite sides of the cellulosic substrate first and second barrier substrates. Each of the first and second barrier substrates have an electrode printed thereon. At least one of the first and second barrier substrates includes first and second polymer layers.

Abstract: A telescoping rod structure, for a linear actuator, arranged at a connecting position of a telescoping rod of a linear actuator, mainly includes a telescoping rod, a sleeve, and a connecting cap, wherein the telescoping rod is connected to a linear transmitting mechanism, and an accommodating groove passing through the telescoping rod is arranged at top of the telescoping rod; furthermore, the sleeve, arranged in the accommodating groove, is a hollow pipe piece for accommodating a connecting element to pass through; finally, the cap is a hollow lid body, the peripheral of which is arranged a plurality of corresponding projecting seats, at each of which a thorough hole is arranged such that, when the cap is fitted onto the top of the telescoping rod, it may fix the position of the sleeve arranged at the accommodating groove, in the meantime, by making the thorough holes just correspond to the hollow position of the sleeve, it being able to facilitate the connecting element to be fitted and connected securely t

Abstract: A fin-type field effect transistor including at least one fin-type semiconductor structure, a gate strip and a gate insulating layer is provided. The fin-type semiconductor structure is doped with a first type dopant and has a block region with a first doping concentration and a channel region with a second doping concentration. The first doping concentration is larger than the second doping concentration. The blocking region has a height. The channel region is configured above the blocking region. The gate strip is substantially perpendicular to the fin-type semiconductor structure and covers above the channel region. The gate insulating layer is disposed between the gate strip and the fin-type semiconductor structure.

Abstract: A method of forming an interconnect structure that may reduce or eliminate stress induced voids is provided. In an embodiment, a via is formed below a conductive line to provide an electrical connection to an underlying conductive region. The conductive line includes a widened region above the via. The widened region serves to reduce or eliminate stress induced voids between the via and the underlying conductive region. In another embodiment, one or more redundant lines are formed extending from a conductive region, such as a contact pad, such that the redundant line does not electrically couple the conductive region to an underlying conductive region. In a preferred embodiment, the redundant lines extend from a conductive region on a side adjacent to a side having a conductive line coupled to a via.

Abstract: An electromagnetic resistance apparatus includes a support frame, a metallic conductive plate rotatably mounted on the support frame, and at least one magnetically controlled mechanism mounted on the support frame and aligning with the metallic conductive plate. Thus, the electromagnetic resistance apparatus has a modularized structure so that the electromagnetic resistance apparatus is mounted on a rehabilitation or exercising equipment easily and quickly so as to shorten the time and save the cost of assembly of the electromagnetic resistance apparatus.

Abstract: A collaborative bus arbitration multiplex architecture includes of a main memory, a bus, a plurality of BMPDs, and a BAM. Arbitration can be done according to the following steps of awaiting whether any of the BMPDs renders any request for access; B) identifying whether the access authority of the bus is being fetched by any other BMPDs; C) identifying whether the main memory to which the request for access corresponds have any record that the corresponding BMPD needs special treatment; D) identifying whether all of the BMPDs have rendered the requests for access; E) according to a generic arbitration principle, identifying whether the corresponding BMPDs indicated in the steps C) and D) win the access authority; F) yielding the access authority of the bus to the BMPDs winning the access authority as indicated in the step E); and G) accessing the main memory.

Abstract: A semiconductor chip includes a seal ring adjacent to edges of the semiconductor chip; an opening extending from a top surface to a bottom surface of the seal ring, wherein the opening has a first end on an outer side of the seal ring and a second end on an inner side of the seal ring; and a moisture barrier having a sidewall parallel to a nearest side of the seal ring, wherein the moisture barrier is adjacent the seal ring and has a portion facing the opening.

Abstract: An automatic software audit system includes a client and a server. The client includes a network interface, a software installation record database, a software audit rule database, a software release database and a central processing unit (CPU). The network interface is coupled to the client. The software installation record databases stores a software installation record of the client. The software audit rule database stores a software audit rule. The software release database stores a software release record of the client. The CPU installs an agent program to the client to collect the software installation record, and generates a software audit result of the client according to the software installation record, the software audio rule and the software release record.

Abstract: A magnetic separation device is provided, including a first magnetic field unit and a first separation unit disposed at a side of the first magnetic field unit. The first magnetic field unit includes a first magnetic yoke having opposite first and second surfaces, and a plurality of first magnets respectively disposed over the first and second surfaces, wherein the same magnetic poles of the plurality of first magnets face the first magnetic yoke. The first separation unit includes a body made of non-magnetic materials and a continuous piping disposed in the body, including at least one first section and at least one second section, wherein at least one second section is perpendicular to at least one first section, and at least one second section is adjacent to, and in parallel to a side of the first magnetic yoke not in contact with the plurality of first magnets.

Abstract: A semiconductor chip includes a seal ring adjacent to edges of the semiconductor chip; an opening extending from a top surface to a bottom surface of the seal ring, wherein the opening has a first end on an outer side of the seal ring and a second end on an inner side of the seal ring; and a moisture barrier having a sidewall parallel to a nearest side of the seal ring, wherein the moisture barrier is adjacent the seal ring and has a portion facing the opening.

Abstract: A finFET device includes a substrate, at least a first fin structure disposed on the substrate, a L-shaped insulator surrounding the first fin structure and exposing, at least partially, the sidewalls of the first fin structure, wherein the height of the L-shaped insulator is inferior to the height of the first fin structure in order to expose parts of the sidewalls surface of the first fin structure, and a gate structure disposed partially on the L-shaped insulator and partially on the first fin structure.

Abstract: Rehabilitation exercising equipment includes a frame unit, a seat unit mounted on the frame unit, a first geared member rotatably mounted on the frame unit, a second geared member rotatably mounted on the frame unit, a connecting member mounted between the first geared member and the second geared member to connect the first geared member and the second geared member, and a control handle connected with the first geared member. Thus, a user's hands can hold the control handle to move the control handle forward and backward so as to exercise or rehabilitate the user's waist, arms and legs.

Abstract: A semiconductor chip includes a seal ring adjacent to edges of the semiconductor chip; an opening extending from a top surface to a bottom surface of the seal ring, wherein the opening has a first end on an outer side of the seal ring and a second end on an inner side of the seal ring; and a moisture barrier having a sidewall parallel to a nearest side of the seal ring, wherein the moisture barrier is adjacent the seal ring and has a portion facing the opening.

Abstract: Systems and methods for measuring flow velocities, including ultrasound systems, are provided. A Doppler angle between a direction of ultrasound signals and an axis of a flow may be estimated to improve the accuracy of the flow velocity estimation that is based on Doppler effects. A sensor may be mounted on or in an ultrasound probe to obtain a reference orientation of the ultrasound probe and an orientation of the ultrasound probe relative to the reference orientation when the ultrasound probe is moved to other positions. The Doppler angle may be estimated based on the orientation of the ultrasound probe.

Abstract: A field effect transistor (FET) and a manufacturing method thereof are provided. The FET includes a substrate, a fin bump, an insulating layer, a charge trapping structure and a gate structure. The fin bump is disposed on the substrate. The insulating layer is disposed on the substrate and located at two sides of the fin bump. The charge trapping structure is disposed on the insulating layer and located at at least one side of the fin bump. A cross-section of the charge trapping structure is L-shaped. The gate structure covers the fin bump and the charge trapping structure.

Abstract: A method for controlling a video camera positioning system includes the steps of controlling a motor for driving a video camera to capture a panoramic frame, dividing the panoramic frame into a plurality of frames, controlling the motor for driving the camera lens to turn to the frame corresponding to an encoded command signal when the microcontroller receiving the encoded command signal, and zooming in the frame by the video camera. Furthermore, a video camera positioning system is also disclosed herein.