Abstract: There are provided a control circuit for a digitally controlled oscillator and a control apparatus for a digitally controlled oscillator using the same. The control circuit for a digitally controlled oscillator includes: a peak detection circuit detecting amplitude of a signal output from the digitally controlled oscillator; and a transconductance control circuit comparing an output of the peak detection circuit with a predetermined reference signal to control a transconductance value of a negative transconductance circuit included in the digitally controlled oscillator.

Abstract: There are provided an analog-to-digital signal conversion method and apparatus therefor, and a digital phase locked loop circuit including the same. The analog-to-digital signal conversion method may include: generating a first digital output signal having N number of bits by comparing each of N number of delay signals detected from output terminals of N number of delay cells with a reference signal; generating a second digital output signal by comparing an auxiliary delay signal generated by an (N+1)th delay cell with the reference signal; and determining a change in a delay time of each of the N number of delay cells based on the first digital output signal and the second digital output signal.

Abstract: There are provided an analog-to-digital signal conversion method and apparatus therefor, and a digital phase locked loop circuit including the same. The analog-to-digital signal conversion method may include: generating a first digital output signal having N number of bits by comparing each of N number of delay signals detected from output terminals of N number of delay cells with a reference signal; generating a second digital output signal by comparing an auxiliary delay signal generated by an (N+1)th delay cell with the reference signal; and determining a change in a delay time of each of the N number of delay cells based on the first digital output signal and the second digital output signal.

Abstract: A digital Phase Locked Loop (PLL) in a wireless communication system is provided. The PLL includes a Digitally Controlled Oscillator (DCO), a divider, a Phase Frequency Detector (PFD), a Time to Digital Converter (TDC), a delay comparator, and a level scaler. The DCO generates a frequency signal depending on an input Digital Tuning Word (DTW). The divider divides the frequency signal at an integer ratio. The PFD generates a signal representing a phase difference between a divided frequency signal and a reference signal. The TDC measures a time interval of the phase difference using the signal representing the phase difference. The delay comparator calculates a time interval in the case where rising edges coincide from values measured by the TDC. The level scaler generates a DTW that operates the DCO using a digital code representing the time interval.

Abstract: A transceiver may include a reception (Rx) radio frequency (RF) part configured to process a received signal, a transmission (Tx) RF part configured to process a transmitted signal, and a phase lock loop (PLL) configured to provide a reception frequency to the reception RF part and provide a transmission frequency to the transmission RF part. The PLL may be controlled according to whether the reception RF part or the transmission RF part is on. In addition, a transceiver may include quenching waveform generator (QWGs) to control quenching waveforms of the RF parts corresponding to a plurality of antennas. The quenching waveforms may be generated respectively by VCOs operating at a same frequency. The QWGs may control the VCOs such that the quenching waveforms do not overlap.

Abstract: A digital phase-locked loop apparatus using FSK includes a PFD detecting phase differences between a reference clock and a frequency-divided signal, and a first adder for generating first digital control codes by adding first digital codes, second digital codes, and channel frequency codes including channel information to each other, the first digital codes being converted from time differences between first and second pulses. The apparatus further includes a digital filter correcting errors of the first digital control codes to generate second digital control codes, a DCO for varying an oscillating frequency in accordance with a digital tuning word based on the second digital control codes, and a dual modulus division unit dividing the oscillating frequency into a frequency-divided signal.

Abstract: Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device. Thus, effective space arrangement of a memory cell is possible such that a 4F2 structure is constituted, and a conventional line and contact forming process can be applied such that highly integrated semiconductor memory device is readily fabricated.

Abstract: A digital Phase Locked Loop (PLL) in a wireless communication system is provided. The PLL includes a Digitally Controlled Oscillator (DCO), a divider, a Phase Frequency Detector (PFD), a Time to Digital Converter (TDC), a delay comparator, and a level scaler. The DCO generates a frequency signal depending on an input Digital Tuning Word (DTW). The divider divides the frequency signal at an integer ratio. The PFD generates a signal representing a phase difference between a divided frequency signal and a reference signal. The TDC measures a time interval of the phase difference using the signal representing the phase difference. The delay comparator calculates a time interval in the case where rising edges coincide from values measured by the TDC. The level scaler generates a DTW that operates the DCO using a digital code representing the time interval.

Abstract: A digital phase-locked loop apparatus using FSK includes a PFD detecting phase differences between a reference clock and a frequency-divided signal, and a first adder for generating first digital control codes by adding first digital codes, second digital codes, and channel frequency codes including channel information to each other, the first digital codes being converted from time differences between first and second pulses. The apparatus further includes a digital filter correcting errors of the first digital control codes to generate second digital control codes, a DCO for varying an oscillating frequency in accordance with a digital tuning word based on the second digital control codes, and a dual modulus division unit dividing the oscillating frequency into a frequency-divided signal.

Abstract: A Time-to-Digital Converter (TDC) is provided.

Abstract: Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device.

Abstract: Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device. Thus, effective space arrangement of a memory cell is possible such that a 4F2 structure is constituted, and a conventional line and contact forming process can be applied such that highly integrated semiconductor memory device is readily fabricated.

Abstract: There are provided a semiconductor device having a vertical transistor and a method of fabricating the same. The method includes preparing a semiconductor substrate having a cell region and a peripheral circuit region. Island-shaped vertical gate structures two-dimensionally aligned along a row direction and a column direction are formed on the substrate of the cell region. Each of the vertical gate structures includes a semiconductor pillar and a gate electrode surrounding a center portion of the semiconductor pillar. A bit line separation trench is formed inside the semiconductor substrate below a gap region between the vertical gate structures, and a peripheral circuit trench confining a peripheral circuit active region is formed inside the semiconductor substrate of the peripheral circuit region. The bit line separation trench is formed in parallel with the column direction of the vertical gate structures.

Abstract: A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers.

Abstract: A Time-to-Digital Converter (TDC) is provided.

Abstract: In a semiconductor memory device having a vertical channel transistor a body of which is connected to a substrate and a method of fabricating the same, the semiconductor memory device includes a semiconductor substrate including a plurality of pillars arranged spaced apart from one another, and each of the pillars includes a body portion and a pair of pillar portions extending from the body portion and spaced apart from each other. A gate electrode is formed to surround each of the pillar portions. A bitline is disposed on the body portion to penetrate a region between a pair of the pillar portions of each of the first pillars arranged to extend in a first direction. A wordline is disposed over the bitline, arranged to extend in a second direction intersecting the first direction, and configured to contact the side surface of the gate electrode. A first doped region is formed in the upper surface of each of the pillar portions of the pillar.

Abstract: Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device. Thus, effective space arrangement of a memory cell is possible such that a 4F2 structure is constituted, and a conventional line and contact forming process can be applied such that highly integrated semiconductor memory device is readily fabricated.

Abstract: Channels of two transistors are vertically formed on portions of two opposite side surfaces of one active region, and gate electrodes are vertically formed on a device isolation layer contacting the channels of the active region. A common bit line contact plug is formed in the central portions of the active region, two storage node contact plugs are formed on both sides of the bit line contact plug, and an insulating spacer is formed on a side surface of the bit line contact plug. A word line, a bit line, and a capacitor are sequentially stacked on the semiconductor substrate, like a conventional semiconductor memory device.

Abstract: An integrated circuit package includes an inductance loop formed from a connection of bonding wires and one or more input/output (I/O) package pins. In one embodiment, the inductance loop is formed from a first wire which connects a bonding pad on the integrated circuit chip to an I/O pin of the package and a second wire which connects the same bonding pad to the same pin. By forming the inductor loop within the limits of the integrated circuit package, a substantial reduction in space requirements is realized, which, in turn, promotes miniaturization.