Patents by Inventor Kazunori Nakamoto
Kazunori Nakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11424106Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.Type: GrantFiled: May 28, 2018Date of Patent: August 23, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Yuki Kondo, Kenetsu Yokogawa, Masahito Mori, Satoshi Une, Kazunori Nakamoto
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Patent number: 11315759Abstract: A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.Type: GrantFiled: February 8, 2019Date of Patent: April 26, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Takamasa Ichino, Kohei Sato, Kazunori Nakamoto
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Publication number: 20210233744Abstract: A plasma processing apparatus includes a processing chamber in which a wafer 1 is processed by using plasma, a radio-frequency power supply that supplies radio-frequency power for generating the plasma, a sample table 2 which is arranged in the processing chamber and in which the wafer 1 is mounted, and a DC power supply 106 which is electrically connected to the sample table 2 and which causes the sample table 2 to generate a suction force. The sample table 2 includes a protruded portion 201a that sucks the wafer 1 by the suction force and a level different portion 201b protruding from a lower portion of the protruded portion 201a. A ring 5 that can be in contact with a lower surface of the wafer 1 is provided outside the protruded portion 201a. A space portion 7 formed by the wafer 1, the protruded portion 201a, and the ring 5 is sealed in a state in which the wafer 1 is sucked to an upper surface of the protruded portion 201a of the sample table 2.Type: ApplicationFiled: February 8, 2019Publication date: July 29, 2021Inventors: Takamasa ICHINO, Kohei SATO, Kazunori NAKAMOTO
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Publication number: 20210111002Abstract: Provided is a technique capable of reducing a variation in processing in an in-plane direction of a sample and improving a yield of processing. A plasma processing apparatus 1 includes a first electrode (a base material 110B) disposed in a sample stage 110, a ring-shaped second electrode (a conductive ring 114) disposed surrounding an outer peripheral side of an upper surface portion 310 (a dielectric film portion 110A) of the sample stage 110, a dielectric ring-shaped member (a susceptor ring 113) that covers the second electrode and is disposed surrounding an outer periphery of the upper surface portion 310, a plurality of power supply paths that supply high frequency power from a high frequency power supply to the first electrode and the second electrode respectively, and a matching device 117 disposed on a power supply path to the second electrode.Type: ApplicationFiled: May 28, 2018Publication date: April 15, 2021Inventors: Yuki KONDO, Kenetsu YOKOGAWA, Masahito MORI, Satoshi UNE, Kazunori NAKAMOTO
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Patent number: 10796890Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: GrantFiled: October 24, 2018Date of Patent: October 6, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Patent number: 10763088Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.Type: GrantFiled: August 24, 2018Date of Patent: September 1, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Takashi Uemura, Takamasa Ichino, Kazunori Nakamoto, Kohei Sato
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Publication number: 20200083026Abstract: A plasma processing device in which plasma processing uniformity is improved up to an outer peripheral portion of a wafer and the number of non-defective devices that can be manufactured from one wafer is increased. The plasma processing device includes a vacuum container; a mounting table, a susceptor ring that covers an outer peripheral portion of an electrode base material, and an insulation ring covered by the susceptor ring and surrounding the electrode base material, and thin film electrode formed on an upper surface and a part of a surface facing the outer periphery of the electrode base material; a first high frequency power applied to the electrode base material a second high frequency power applied to the thin film electrode; a plasma generating unit that generates plasma on an upper portion of the mounting table inside the vacuum container; and a control unit.Type: ApplicationFiled: September 5, 2019Publication date: March 12, 2020Inventors: Takamasa ICHINO, Kohei SATO, Kazunori NAKAMOTO, Kenetsu YOKOGAWA
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Publication number: 20190267219Abstract: Provided is a vacuum processing apparatus that improves an operation rate or efficiency of processing.Type: ApplicationFiled: August 24, 2018Publication date: August 29, 2019Inventors: Takashi UEMURA, Takamasa ICHINO, Kazunori NAKAMOTO, Kohei SATO
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Publication number: 20190057846Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: ApplicationFiled: October 24, 2018Publication date: February 21, 2019Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Patent number: 10141165Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: GrantFiled: February 5, 2016Date of Patent: November 27, 2018Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Patent number: 9384946Abstract: In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.Type: GrantFiled: March 2, 2012Date of Patent: July 5, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Kohei Sato, Kazunori Nakamoto, Yutaka Ohmoto
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Publication number: 20160155617Abstract: There is disclosed a plasma processing apparatus for processing a wafer put on a sample stage disposed in a processing chamber within a vacuum vessel by the use of a plasma generated in the processing chamber after mounting the wafer on the sample stage. The apparatus has heaters in areas of the interior of the sample stage which are divided radially and circumferentially. At least those of the heaters which are arranged in the areas located in the radially outer position include circumferentially arranged heater portions that are connected in series. The amounts of heat generated by these circumferentially arranged heater portions are adjusted.Type: ApplicationFiled: February 5, 2016Publication date: June 2, 2016Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Hironori Kusumoto, Yutaka Ohmoto, Kazunori Nakamoto, Koji Nagai
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Patent number: 9343336Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.Type: GrantFiled: December 2, 2014Date of Patent: May 17, 2016Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventors: Kohei Sato, Kazunori Nakamoto, Yutaka Omoto
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Publication number: 20150083329Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.Type: ApplicationFiled: December 2, 2014Publication date: March 26, 2015Inventors: Kohei SATO, Kazunori NAKAMOTO, Yutaka OMOTO
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Patent number: 8920665Abstract: In a plasma processing apparatus including a processing room disposed in a vacuum vessel, a sample stage located in the processing room, a dielectric film disposed on the top surface of the sample stage and serving as the sample mounting surface of the sample stage, and a plurality of electrodes embedded in the dielectric film for chucking the sample to the dielectric film when supplied with electric power, a part of the sample is chucked by supplying electric power to at least one of the electrodes while the sample is mounted on the sample stage; the sample is heated up to a predetermined temperature; a larger part of the sample is chucked by supplying electric power to the other of the electrodes; and the processing of the sample using the plasma is initiated.Type: GrantFiled: September 4, 2012Date of Patent: December 30, 2014Assignee: Hitachi High-Technologies CorporationInventors: Kohei Sato, Kazunori Nakamoto, Yutaka Omoto
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Patent number: D827592Type: GrantFiled: July 18, 2017Date of Patent: September 4, 2018Assignee: Hitachi High-Technologies CorporationInventors: Takamasa Ichino, Kohei Sato, Kazunori Nakamoto
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Patent number: D836573Type: GrantFiled: July 18, 2017Date of Patent: December 25, 2018Assignee: Hitachi High-Technologies CorporationInventors: Takamasa Ichino, Kohei Sato, Kazunori Nakamoto
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Patent number: D840364Type: GrantFiled: July 18, 2017Date of Patent: February 12, 2019Assignee: Hitachi High-Technologies CorporationInventors: Takamasa Ichino, Kohei Sato, Kazunori Nakamoto
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Patent number: D840365Type: GrantFiled: July 18, 2017Date of Patent: February 12, 2019Assignee: Hitachi High-Technologies CorporationInventors: Takamasa Ichino, Kohei Sato, Kazunori Nakamoto
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Patent number: D1005245Type: GrantFiled: October 18, 2021Date of Patent: November 21, 2023Assignee: Hitachi High-Tech CorporationInventors: Shintarou Nakatani, Takamasa Ichino, Kazunori Nakamoto, Yuki Tanaka