Abstract: Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for physical vapor deposition (PVD) includes: a linear PVD source to provide a stream of material flux comprising material to be deposited on a substrate; and a substrate support having a support surface to support the substrate at a non-perpendicular angle to the stream of material flux, wherein at least one of the substrate support or the linear PVD source are movable in a direction parallel to a plane of the support surface of the substrate support sufficiently to cause the stream of material flux to move completely over a surface of the substrate, when disposed on the substrate support during operation.

Abstract: A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of at least one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, or an electromagnetic coil current of the at least one power supply.

Abstract: Apparatus for providing a magnetic field within a process chamber are provided herein. In some embodiments, an apparatus for providing a magnetic field within a process chamber includes: an inner rotating mechanism including a first plate having a central axis, wherein the first plate includes and a first plurality of magnets and is rotatable about the central axis; and an outer lifting mechanism including a ring disposed proximate the first plate, the ring having a second plurality of magnets coupled to a bottom surface of the ring proximate the peripheral edge of the ring, wherein the ring is movable in a direction perpendicular to the first plate.

Abstract: Embodiments of process chambers are provided herein. In some embodiments, a process chamber includes: a chamber wall defining an inner volume within the process chamber; a substrate support disposed in the inner volume having a support surface to support a substrate, wherein the inner volume includes a processing volume disposed above the support surface and a non-processing volume disposed at least partially below the support surface; a gas supply plenum fluidly coupled to the processing volume via a gas supply channel disposed above the support surface; a pumping plenum fluidly coupled to the processing volume via an exhaust channel disposed above the support surface; and a sealing apparatus configured to fluidly isolate the processing volume from the non-processing volume when the substrate support is in a processing position, wherein the processing volume and the non-processing volume are fluidly coupled when the substrate support is in a non-processing position.

Abstract: Processing methods and apparatus for thin substrates are disclosed. The methods and apparatus rotate a thin substrate without exposing the thin substrate to pressure gradients. The apparatus and method can be part of an integrated system for depositing films on both sides of the thin substrate.

Abstract: An electrostatic chuck includes a puck having a support surface to support a substrate when disposed thereon and an opposing second surface, wherein one or more chucking electrodes are embedded in the puck, a body having a support surface coupled to the second surface of the puck to support the puck, a DC voltage sensing circuit disposed on support surface of the puck, and an inductor disposed in the body and proximate the support surface of the body, wherein the inductor is electrically coupled to DC voltage sensing circuit, and wherein the inductor is configured to filter high frequency current flow in order to accurately measure DC potential on the substrate.

Abstract: Embodiments of collimators and process chambers incorporating same are provided herein. In some embodiments, a collimator for use in a substrate processing chamber includes a ring; an adapter surrounding the ring and having an inner annular wall; and a plurality of spokes extending from the inner annular wall and intersecting at a central axis of the collimator.

Abstract: An apparatus may include a platen to hold a substrate. A substrate plane structure may be disposed in front of the platen. The substrate plane structure has an opening therein. The apparatus may further include a removable structure disposed in the opening of the substrate plane structure. The removable structure may have an opening exposing a surface of the platen.

Abstract: Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.

Abstract: Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern.

Abstract: A spray proportioner hose includes an inner diameter that extends along a longitudinal length of the hose and through which a flow of spray component from a spray proportioner unit may be directed toward a fluid manifold of an applicator gun. At the fluid manifold, the spray component will be mixed with another spray component in a desired proportion. The hose includes a static mixer positioned within its inner diameter to interact with and thereby mix the flowed spray component within the inner diameter of the hose before the spray component is delivered to the fluid manifold.

Abstract: A method and apparatus for repairing overhead conveyor chain by removing a section of track, locating a mobile repair station under the exposed track, and effecting the needed repair on the chain by cycling the intact chain past the mobile repair station and repairing it as it passes. Repair embodiments include re-swaging and repair, replacement or rotation of chain links.

Abstract: A method of displaying information includes presenting representations of information in a manner accounting for independent cognitive capacities corresponding to a subject's left and right halves of visual space. Weightings of importance may be assigned to the information and used to display the representations in the left half or the right half of the visual space with zero or few other representations. Presenting the representations can also include inspecting content of the information and determining a position on a display to present the content as a function of the information previously, currently, or in the future displayed on the display. In a display system, a presentation unit is configured to present, e.g. generate, representations of information in a manner accounting for the independent cognitive capacities, and a display unit is configured to display the representations. Displaying information can include arranging physical objects in locations of a subject's expected visual space.

Abstract: Apparatus for physical vapor deposition of dielectric material is provided herein. In some embodiments, a chamber lid of a physical vapor deposition chamber includes an inner magnetron assembly coupled to an inner target assembly, and an outer magnet assembly coupled to an outer target assembly, wherein the inner magnetron assembly and the inner target assembly are electrically isolated from the outer magnet assembly and the outer target assembly.

Abstract: A method of heating spray components with a spray proportioner unit may include flowing a spray component from a hopper through a preheater and heated hose. The spray component may be received at a receiving end of the heated hose at a first temperature and exit the heated hose at a delivery end at a second temperature. The spray component may be flowed through the heated hose at an operating pressure up to 2000 psi and at a rate up to 12 lb/minute. The second temperature may be at least 30° F., such as between 40° F. and 60° F., greater than the first temperature.

Abstract: A method, or corresponding dynamic display system, for customizing a controller of a display system includes presenting a visual stimulus to a subject at at least one known location relative to the subject's eye gaze; measuring brain activity of the subject's left and right brain hemispheres in response to the subject's viewing of the stimulus; processing the measured brain activity to determine a frequency-dependent metric of the measured brain activity; assessing independent cognitive capacities of the subject's left and right brain hemispheres based on the frequency-dependent metric; and adjusting a function of the controller in the display system according to the assessed independent capacities, such as by adjusting the function to change a stimulus load in a visual hemifield according to the brain activity in the contralateral brain hemisphere. Example applications include head-up display (HUD), augmented reality (AR) or virtual reality (VR) display systems, and brain injury assessment systems.

Abstract: A method, apparatus and system for controlling the processing of a substrate within a process chamber are described herein. In some embodiments, a method of controlling a substrate process within a process chamber includes determining a position of a moveable magnetron in the process chamber relative to a reference location on a surface of the substrate and modulating a power parameter of at least one power supply affecting substrate processing based on the determined position of the magnetron to control, for example, at least one of a deposition rate or an etching rate of the substrate processing. In one embodiment, the modulated power parameter is a power set point of at least one of a direct current (DC) source power, a radio frequency (RF) bias power, a DC shield bias voltage, or an electromagnetic coil current of the at least one power supply.

Abstract: Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a deposition ring and a pedestal assembly. The components of the process kit work alone, and in combination, to significantly reduce their effects on the electric fields around a substrate during processing.

Abstract: Embodiments of methods and apparatus for thermally treating a substrate are provided herein. In some embodiments, a thermal treatment apparatus includes a chamber body including an interior volume; a plurality of substrate supports disposed within the interior volume, wherein each of the plurality of substrate supports includes a heating element; a selectively sealable opening in the chamber body sized to allow substrates to be inserted into or removed from the interior volume; a robotic arm disposed in the interior volume to move substrates onto and off of the plurality of substrate supports; and a heating assembly configured to heat substrates disposed on the robotic arm.