Abstract: A cover apparatus can cover an electrical insulator and an electrical conductor. The cover apparatus includes a leg section that covers a portion of the electrical conductor. A cover section covers a portion of the electrical insulator. The cover section can include a body portion that is coupled to the leg section at a first coupling location. The cover section includes an adjustable portion coupled to the body portion at a second coupling location located on an opposite side of the body portion relative to the first coupling location. The adjustable portion can be adjusted such that a dimension of the adjustable portion is adjusted according to a dimension of the electrical insulator. A method of forming a cover apparatus for covering an electrical insulator and an electrical conductor is also provided.

Abstract: A cover apparatus can cover an electrical insulator and an electrical conductor. The cover apparatus includes one or more leg sections for covering a portion of the electrical conductor. The cover apparatus includes a cover section coupled to the one or more leg sections and covering a portion of the electrical insulator. The cover section includes a body portion and an adjustable portion coupled to the body portion at a coupling location. The adjustable portion can be adjusted such that a dimension of the adjustable portion is adjusted according to a dimension of the electrical insulator. An example method of forming a cover apparatus for covering an electrical insulator and an electrical conductor is also provided.

Abstract: In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position.

Abstract: A cover apparatus is provided for covering an electrical insulator and a conductor. The cover apparatus includes a first cover portion extending along a first axis. The first cover portion comprises a first segment covering a first portion of the electrical insulator and a second segment coupled to the first segment and covering a first portion of the conductor. The cover apparatus includes a second cover portion extending along a second axis. The second cover portion comprises a third segment movably attached to the first segment and a fourth segment coupled to the third segment and covering a portion of the conductor. An example method of forming a cover apparatus for covering an electrical insulator and a conductor is also provided.

Abstract: A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit.

Abstract: In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

Abstract: Methods and apparatus for processing a substrate in a physical vapor deposition (PVD) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed on the outer surface of the shield body, and one or more magnets disposed within the cavity.

Abstract: Embodiments of methods for fabricating a vacuum chamber for semiconductor substrate processing are provided herein. In some embodiments, a method for fabricating a vacuum chamber for semiconductor substrate processing may include: providing one or more plates of material that together form a desired shape of a body of the vacuum chamber; performing a friction stir weld on outer surfaces of adjacent ends of the one or more plates to form the body of the vacuum chamber; and coupling at least one of a top or bottom to a respective top or bottom of the body to form the vacuum chamber.

Abstract: In some embodiments, a sputter source for a process chamber may include: a first enclosure having a top, sides and an open bottom; a target coupled to the open bottom; an electrical feed coupled to the top of the first enclosure proximate a central axis of the first enclosure to provide power to the target via the first enclosure; a magnet assembly having a shaft, a support arm coupled to the shaft, and a magnet coupled to the support arm disposed within the first enclosure; a first rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about the central axis of the first enclosure; and a second rotational actuator disposed off-axis to the central axis of the first enclosure and rotatably coupled to the magnet to rotate the magnet about a central axis of the magnet assembly.

Abstract: A heat sink includes a frame having a non-metallic body that includes a window. The non-metallic body includes at least one peripheral wall that defines a boundary of the window. The non-metallic body includes a non-metallic material. The heat sink also includes a heat exchanger having a base and cooling fins. The base has a structure side and an opposite environmental side. The structure side of the base is configured to thermally communicate with a structure for absorbing heat from the structure. The cooling fins extend from the environmental side of the base. The heat exchanger is held by the frame such that the cooling fins extend within the window of the frame.

Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first plate having a first central axis, the first plate rotatable about the first central axis, a first open loop magnetic pole coupled to the first plate, a second plate having a second central axis, the second plate rotatable about the second central axis, and a second open loop magnetic pole coupled the second plate, wherein the first open loop magnetic pole and the second open loop magnetic pole form a closed loop magnetic pole when the first and second open loop magnetic poles are aligned.

Abstract: Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode.

Abstract: Access level management techniques which require less manual intervention. In one example, a registration system registers an individual for an access level and receives a mobile device identifier from the individual. The registration system generates an electronic pass, which may include a mobile barcode, granting the individual access at the requested access level, and provides the electronic pass to a mobile communication device of the individual using the mobile device identifier. In one application, an individual with a mobile barcode associated with priority access level privileges may be allowed to bypass a queue by using a priority lane.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: When a magnetron is scanned about the back of a target in a selected complex path having radial components, the erosion profile has a form depending upon the selection of paths. A radial erosion rate profile for a given magnetron is measured. Periodically during scanning, an erosion profile is calculated from the measured erosion rate profile, the time the magnetron spends at different radii, and the target power. The calculated erosion profile may be used to indicate when erosion has become excessive at any location prompting target replacement or to adjust the height of the magnetron above the target for repeated scans. In another aspect of the invention, the magnetron height is dynamically adjusted during a scan to compensate for erosion. The compensation may be based on the calculated erosion profile or on feedback control of the present value of the target voltage for a constant-power target supply.

Abstract: In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.

Abstract: Embodiments of substrate support rings are provided herein. In some embodiments, an apparatus for processing substrates includes, a ring configured to be disposed about a peripheral edge of a substrate support to support at least a portion of a substrate disposed atop the substrate support, wherein the ring comprises a heater; and a power supply coupled to the heater to provide power to the heater.

Abstract: Embodiments described herein generally relate to components for a semiconductor processing chamber, a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a process kit. In one embodiment a lower shield for encircling a sputtering target and a substrate support is provided. The lower shield comprises a cylindrical outer band having a first diameter dimensioned to encircle the sputtering surface of the sputtering target and the substrate support, the cylindrical band comprising a top wall that surrounds a sputtering surface of a sputtering target and a bottom wall that surrounds the substrate support, a support ledge comprising a resting surface and extending radially outward from the cylindrical outer band, a base plate extending radially inward from the bottom wall of the cylindrical band, and a cylindrical inner band coupled with the base plate and partially surrounding a peripheral edge of the substrate support.

Abstract: A continuously variable multi-position magnetron that is rotated about a central axis in back of a sputtering target at a freely selected radius. The position is dynamically controlled from the outside, for example, through a hydraulic actuator connected between a pivoting arm supporting the magnetron and an arm fixed to the shaft, by two coaxial shafts independent controllable from the outside and supporting the magnetron through a frog-leg mechanism, or a cable connected between the pivoting arms and moved by an external slider. The magnetron can be rotated at two, three, or more discrete radii or be moved in a continuous spiral pattern.

Abstract: Target assemblies for use in a substrate processing system are provided herein. In some embodiments, a target assembly for use in a substrate processing system may include a source material to be deposited on a substrate, a first backing plate configured to support the source material on a front side of the first backing plate, such that a front surface of the source material opposes the substrate when present, a second backing plate coupled to a backside of the first backing plate, and a plurality of sets of channels disposed between the first and second back plates. These channels permit a coolant to be provided closer to the heat source (target face) thereby facilitating more efficient heat removal from the target. More efficient heat removal from the target results in a target with a lesser thermal gradient and therefore less mechanical bowing/deformation.