Abstract: There is provided an acidic zirconia sol having compatibility of particle properties and binding properties, and a production method of the same. The present invention relates to a production method of an acidic zirconia sol containing zirconia particles having a particle diameter of less than 20 nm in a content of 10 to 50% by mass, based on the mass of all zirconia particles including: a first process in which an alkaline zirconia sol (A) and a zirconium salt (B) are mixed in a mass ratio (Bs/As) ranging from 0.2 to 5.0 of a mass of a solid content (Bs) which is converted into an amount of ZrO2 in the zirconium salt (B) to a mass of a solid content (As) which is converted into an amount of ZrO2 in the alkaline zirconia sol (A); and a second process in which the resultant mixture is reacted at 80 to 250° C. to produce an acidic zirconia sol.

Abstract: The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing for forming a polishing chamber therein, a rotational table for holding and rotating a substrate, a polishing tape supply mechanism for supplying a polishing tape into the polishing chamber and taking up the polishing tape which has been supplied to the polishing chamber, a polishing head for pressing the polishing tape against a bevel portion of the substrate, a liquid supply for supplying a liquid to a front surface and a rear surface of the substrate, and a regulation mechanism for making an internal pressure of the polishing chamber being set to be lower than an external pressure of the polishing chamber.

Abstract: There is provided a method for producing an elongated-shaped silica sol comprising the following steps: (a) adding an aqueous solution containing a water soluble Ca salt and/or Mg salt to an aqueous colloidal solution of active silicic acid with an SiO2 concentration of 1 to 6% by mass and a pH of 2 to 5 in a mass ratio of CaO and/or MgO to SiO2 in the active silicic acid of 1500 to 15,000 ppm, and mixing; (b) adding alkali metal hydroxide, a water soluble organic base, or water soluble silicate thereof to an aqueous solution obtained through (a) in a determined molar ratio to SiO2, and mixing; (c) heating a mixture obtained through (b) at 85 to 200° C. for 0.5 to 20 hours so as to obtain a colloidal solution; (d) removing, from the colloidal solution obtained through (c), part of water and at least part of anions derived from the aqueous solution containing the water soluble Ca salt and/or Mg salt; and (e) heating a colloidal solution obtained through (d) at a temperature of 80 to 195° C.

Abstract: An electric heating device includes a heating member (70) having a PTC element (72) and a fin member (80) configured to radiate heat generated in the heater member (70) into the atmosphere. The fin member (80) is provided in contact with a casing member provided outside the heating member (70). The electric heating device includes a pair of sandwiching plates (75, 75) configured to hold a constituent of the heating member that include the PTC element (72) in a vertically sandwiching manner. Moreover, a clip member (90) which is configured to engage end edges of both of the sandwiching plates (75, 75) with each other while applying a load to the sandwiching plates (75, 75) in the sandwiching direction, is provided on front surfaces (75a) of the pair of sandwiching plates (75, 75).

Abstract: A production method of an alkaline zirconia sol including: a process (I) in which an alkaline zirconia sol (A) is mixed with a basic zirconium carbonate salt (B1), the alkaline zirconia sol (A) being obtained by: a sub-process (i) in which a zirconium salt (B2) is heated at 60 to 110° C. in an aqueous medium containing a carbonate salt of quaternary ammonium; and a sub-process (ii) in which a hydrothermal treatment is performed at 110 to 250° C. following the sub-process (i).

Abstract: There is provided a method for controlling a line head including a focusing optical system, first light emitters, light from which being focused by the focusing optical system, second light emitters disposed next to the first light emitters in a first direction, light from the second light emitters being focused by the focusing optical system, and third light emitters disposed next to the second light emitters in the first direction, light from the third light emitters being focused by the focusing optical system. The method includes turning on the first light emitters at time t0, turning on the second light emitters after a period t1 has passed since the time t0, and turning on the third light emitters after a period t2 has passed since the time t0. The periods t1 and t2 are controlled under the following condition: t2?n×t1 (n is an integer two or greater).

Abstract: A control method of a line head including a first image forming system; a first light emission element which emits light for forming an image by an image forming lens of the first image forming system; a second image forming system disposed in a first direction of the first image forming system; and a second light emission element which emits light for forming an image by an image forming lens of the second image forming system is disclosed. The method includes, when the first light emission element emits light at a time t0 and then emits light after a time t1 from the time t0, and also when the second light emission element emits light after a time t2 from the time t0, controlling the time t1 and the time t2 such that t2?n·t1 (n: 2 or larger integer) holds.

Abstract: It is an object to provide a method for producing stable alkaline metal oxide sols having a uniform particle size distribution. The method comprises the steps of: heating a metal compound at a temperature of 60° C. to 110° C. in an aqueous medium that contains a carbonate of quaternary ammonium; and carrying out hydrothermal processing at a temperature of 110° C. to 250° C. The carbonate of quaternary ammonium is (NR4)2CO3 or NR4HCO3 in which R represents a hydrocarbon group, or a mixture thereof. The metal compound is one, or two or more metal compounds selected from a group of compounds based on a metal having a valence that is bivalent, trivalent, or tetravalent.

Abstract: There is provided a method for stably producing metal oxide solid solution particle at low temperature, wherein an alkaline zirconia sol is used as a raw material which is mixed with a metal compound, and then dried and fired. Specifically, there is disclosed a method for producing metal oxide particle (A3) such as zirconia particle in which metal oxides are solid-solubilized, comprising: a step (I) for obtaining metal oxide (A2) sol such as zirconia sol containing a precursor of a metal oxide by mixing an alkaline zirconia (A1) sol which is obtained by a method including a step (i) for heating a zirconium salt (B2) at 60-110° C. in an aqueous medium containing a carbonate of quaternary ammonium and a step (ii) for performing a hydrothermal treatment at 110-250° C.

Abstract: The present invention provides a polishing apparatus for polishing a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.

Abstract: The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing (3) for forming a polishing chamber (2) therein, a rotational table (1) for holding and rotating a substrate (W), a polishing tape supply mechanism (6) for supplying a polishing tape (5) into the polishing chamber (2) and supplied to the polishing chamber (2), a polishing head (35) for pressing the polishing tape (5) against a bevel portion of the substrate (W), a liquid supply (50) for supplying a liquid to a front surface and a rear surface of the substrate (W), and a regulation mechanism (16) for making an internal pressure of the polishing chamber (2) being set to be lower than an external pressure of the polishing chamber (2).

Abstract: The present invention provides a substrate processing apparatus and a substrate processing method suitable for use in an etching apparatus which etches a thin film formed on a peripheral portion of a substrate. The present invention also provides a substrate processing apparatus and a substrate processing method suitable for use in a cleaning apparatus which performs a cleaning process on a substrate which has been etched. The substrate processing apparatus for use in etching includes a substrate holder 11 for holding a substrate W substantially horizontally and rotating the substrate W, and a processing liquid supply unit 15 for supplying a processing liquid onto a peripheral portion of the substrate W which is being rotated in such a manner that the processing liquid is stationary with respect to the substrate W.

Abstract: A device for polishing the peripheral edge part of a semiconductor wafer includes a wafer stage for holding the wafer, a wafer stage unit including devices for rotating the wafer stage, causing the wafer stage to undergo a rotary reciprocating motion within the same plane as the surface of the wafer stage, and moving the wafer stage parallel to the surface, a notch polishing part for polishing the notch on the wafer and a bevel polishing part for polishing the beveled part of the wafer. Pure water is supplied to the wafer to prevent it from becoming dry as it is transported from the notch polishing part to the bevel polishing part.

Abstract: [Problems to be Solved] To provide a production method of an alkaline zirconia having compatibility of particle properties and binding properties. [Means to Solve the Problems] A production method of an alkaline zirconia sol including: a process (I) in which an alkaline zirconia sol (A) is mixed with a basic zirconium carbonate salt (B1), the alkaline zirconia sol (A) being obtained by: a sub-process (i) in which a zirconium salt (B2) is heated at 60 to 110° C. in an aqueous medium containing a carbonate salt of quaternary ammonium; and a sub-process (ii) in which a hydrothermal treatment is performed at 110 to 250° C. following the sub-process (i). More specifically, a production method of an alkaline zirconia sol including: a process (I) in which an alkaline zirconia sol (A) and a basic zirconium carbonate salt (B1) are mixed in a mass ratio (Bs/As) ranging from 0.05 to 4.

Abstract: An image forming device includes a photoconductor drum having a rotational shaft in a first direction, and an exposure head having a plurality of imaging optical systems disposed in the first direction and a second direction and each having a negative optical magnification, and a light emitting element substrate on which a plurality of light emitting elements are disposed, the plurality of light emitting elements emitting light beams imaged on the photoconductor drum by one of the imaging optical systems, and the light beams are imaged by the imaging optical systems disposed in the second direction on the photoconductive drum at positions different from each other in the second direction.

Abstract: A light exposure head includes a base; a substrate disposed on the base, the substrate having a plurality of light emitting elements disposed thereon; and n (n is an integer greater than or equal to one) imaging optical systems, each of which having a negative optical magnification, the imaging optical systems focusing light beams emitted from the plurality of light emitting elements disposed on the substrate.

Abstract: A manufacturing method for a slurry for the production of a precision casting mold that includes a zirconia sol and a refractory powder, and a manufacturing method for a precision casting mold that uses the slurry is provided. The present invention relates to a manufacturing method for a slurry for the production of a precision casting mold for a metal that includes a step in which an alkaline zirconia sol (A1) and a refractory powder (D) are mixed, the alkaline zirconia sol (A1) being obtained by a manufacturing method that includes a step (i), in which a zirconium salt (B1) is heated at 60 to 110° C. in an aqueous medium that includes a carbonate of quaternary ammonium, and a step (ii), in which a hydrothermal treatment is carried out at 100 to 250° C.

Abstract: There is provided an acidic zirconia sol having compatibility of particle properties and binding properties, and a production method of the same. The present invention relates to a production method of an acidic zirconia sol containing zirconia particles having a particle diameter of less than 20 nm in a content of 10 to 50% by mass, based on the mass of all zirconia particles including: a first process in which an alkaline zirconia sol (A) and a zirconium salt (B) are mixed in a mass ratio (Bs/As) ranging from 0.2 to 5.0 of a mass of a solid content (Bs) which is converted into an amount of ZrO2 in the zirconium salt (B) to a mass of a solid content (As) which is converted into an amount of ZrO2 in the alkaline zirconia sol (A); and a second process in which the resultant mixture is reacted at 80 to 250°C. to produce an acidic zirconia sol.

Abstract: The accuracy of effective channel width extraction in drain current method is improved. There are prepared a transistor with a wide channel width serving as a reference, and a transistor with a narrow channel width that becomes a candidate for extraction (step ST1.1). From the characteristic curve of a plane formed by mask channel width and source-drain conductance, there is extracted a virtual point at which the change of source-drain conductance is estimated to be approximately zero even if the gate overdrive is finely changed. Then, the value of function F is calculated which is defined by the difference between the change of the conductance at the coordinate of the virtual point and the product obtained by multiplying the conductance per unit width by the change of the mask channel width (step ST1.6). From a shift amount (?) which minimizes the standard deviation of the function F to be obtained (step ST1.

Abstract: A substrate processing apparatus (1) has a first polishing unit (400A) and a second polishing unit (400B) for polishing a peripheral portion of a substrate. Each of the two polishing units (400A, 400B) includes a bevel polishing device (450A, 450B) for polishing a peripheral portion of a substrate and a notch polishing device (480A, 480B) for polishing a notch of a substrate. The substrate processing apparatus (1) has a maintenance space (7) formed between the two polishing units (400A, 400B). The bevel polishing devices (450A, 450B) in the two polishing units (400A, 400B) face the maintenance space (7) so as to be accessible from the maintenance space (7).