Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.

Abstract: A reactive material erasure element including a reactive material is located between PCM cells and is in close proximity to the PCM cells. The reaction of the reactive material is trigger by a current applied by a bottom electrode which has a small contact area with the reactive material erasure element, thereby providing a high current density in the reactive material erasure element to ignite the reaction of the reactive material. Due to the close proximity of the PCM cells and the reactive material erasure element, the heat generated from the reaction of the reactive material can be effectively directed to the PCM cells to cause phase transformation of phase change material elements in the PCM cells, which in turn erases data stored in the PCM cells.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.

Abstract: A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.

Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

Abstract: A method comprising bonding a first substrate to a second substrate. The first substrate includes a layer of one or more pairs of reactive material. The method comprising triggering a reaction between the one or more pairs of reactive material and fragmenting the second substrate.

Abstract: A method comprising bonding a first substrate to a second substrate. The first substrate includes a layer of one or more pairs of reactive material. The method comprising triggering a reaction between the one or more pairs of reactive material and fragmenting the second substrate.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass enclosure enclosing, at least in part, at least one electronic component within a secure volume, and a tamper-respondent detector. The glass enclosure includes stressed glass with a compressively-stressed surface layer, and the tamper-respondent detector monitors, at least in part, the stressed glass to facilitate defining the secure volume. The stressed glass fragments with an attempted intrusion event through the stressed glass, and the tamper-respondent detector detects the fragmenting of the stressed glass. In certain embodiments, the stressed glass may be a machined glass enclosure that has undergone ion-exchange processing, and the compressively-stressed surface layer of the stressed glass may be compressively-stressed to ensure that the stressed glass fragments into glass particles of fragmentation size less than 1000 ?m with the intrusion event.

Abstract: The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Abstract: A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

Abstract: A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.

Abstract: A radiation exposure system having a beam source is provided. The system further includes a variable thickness degrader, positioned between the beam source and an object to be exposed, for providing varying degrees of degradation to a radiation beam emitted from the beam source onto the object. The system also includes a set of detectors, positioned between the variable thickness degrader and the object, for receiving and measuring only a portion of the radiation beam remaining after the degradation of the radiation beam by the variable thickness degrader.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.

Abstract: The present disclosure relates to integrated circuits and to methods of manufacturing interconnects of integrated circuits. For example, an integrated circuit includes a surface of the integrated circuit and an interconnect formed on the surface and comprising a metal. An average grain size of the metal of the interconnect is greater than or equal to at least half of a line width of the interconnect. In another example, a method for manufacturing an interconnect of an integrated circuit includes depositing a layer of a metal onto a surface of the integrated circuit, annealing the metal, patterning a first hard mask for placement over the metal and forming a line of the interconnect and a first via of the interconnect by performing a timed etch of the metal using the first hard mask.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.