Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.

Abstract: In one aspect, a method for use in preparing a glass comprises: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion. In another aspect, a glass is prepared at least in part by: performing a first ion exchange process to replace at least a first ion in the glass with at least a second ion, the second ion being smaller than the first ion; and performing a second ion exchange process to replace at least the second ion in the glass with at least a third ion, the third ion being larger than the first ion.

Abstract: An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second lateral bipolar junction transistors (BJTs) having opposite polarities. The first lateral BJT has a base that is electrically coupled to the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second lateral BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second lateral BJTs, the sensing structure, and the substrate on which they are formed comprise a monolithic structure.

Abstract: An integrated circuit structure and formation thereof. The integrated circuit structure includes a substrate and a front-end-of-the-line (FEOL) portion. The FEOL portion rests on top of and in contact with the substrate. The integrated circuit structure includes a memory level portion. The memory level portion rests on top of and in contact with the FEOL portion. The integrated circuit structure includes a back-end-of-the-line (BEOL) portion. The BEOL portion rests on top of and in contact with the memory level portion. The integrated circuit structure includes a multiple layer that includes one or more pairs of reactive materials. The multiple layer is one or more of: i) on top of the BEOL portion; ii) within the BEOL portion; iii) within the memory level portion; iv) within the FEOL portion; v) embedded in the substrate; and vi) on bottom of a thinned substrate.

Abstract: An apparatus and method for measuring flux, current, or integrated charge of a beam are provided. The apparatus and method include a cup on which the beam is incident. The cup includes an inner cylinder, a coaxial cylinder, and an aperture. The coaxial cylinder surrounds the inner cylinder and is electrically insulated therefrom. An offset current source is in electrical communication with the inner cylinder. An electrometer, a charge integrator, or a counter may be electrically connected to the cup and the offset current source. When the beam is incident on the cup and aligned with the aperture, the electrometer can measure the beam current and the charge integrator can measure the integrated charge of the beam.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: A reactive material stack with tunable ignition temperatures is provided by inserting a barrier layer between layers of reactive materials. The barrier layer prevents the interdiffusion of the reactive materials, thus a reaction between reactive materials only occurs at an elevated ignition temperature when a certain energy threshold is reached.

Abstract: A method of forming an electrical device is provided that includes forming microprocessor devices on a microprocessor die; forming memory devices on an memory device die; forming component devices on a component die; and forming a plurality of packing devices on a packaging die. Transferring a plurality of each of said microprocessor devices, memory devices, component devices and packaging components to a supporting substrate, wherein the packaging components electrically interconnect the memory devices, component devices and microprocessor devices in individualized groups. Sectioning the supporting substrate to provide said individualized groups of memory devices, component devices and microprocessor devices that are interconnected by a packaging component.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.

Abstract: An arming switch structure and method of operation. The arming switch is integrated with a reactive material erasure device and phase change memory cell array and is coupled to a tamper detection device configured to trigger a signal for conduction to the reactive material erasure device that generates heat and induces a phase change in the phase change memory cell array. Prior to packaging, the memory chip is “armed” in a high-resistance state to prevent conduction of any signal to the reactive material erasure device. After the memory chip is packaged, the Reactive Material can be “disarmed” at a chosen time or condition by applying a bias to the arming switch activation layer, thereby heating and crystallizing the arming switch material, placing it in a low resistance state. In the disarmed state, the arming switch may conduct the trigger signal from tamper detection device to the reactive material erasure device.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass enclosure enclosing, at least in part, at least one electronic component within a secure volume, and a tamper-respondent detector. The glass enclosure includes stressed glass with a compressively-stressed surface layer, and the tamper-respondent detector monitors, at least in part, the stressed glass to facilitate defining the secure volume. The stressed glass fragments with an attempted intrusion event through the stressed glass, and the tamper-respondent detector detects the fragmenting of the stressed glass. In certain embodiments, the stressed glass may be a machined glass enclosure that has undergone ion-exchange processing, and the compressively-stressed surface layer of the stressed glass may be compressively-stressed to ensure that the stressed glass fragments into glass particles of fragmentation size less than 1000 ?m with the intrusion event.

Abstract: A method comprising bonding a first substrate to a second substrate. The first substrate includes a layer of one or more pairs of reactive material. The method comprising triggering a reaction between the one or more pairs of reactive material and fragmenting the second substrate.

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass enclosure enclosing, at least in part, at least one electronic component within a secure volume, and a tamper-respondent detector. The glass enclosure includes stressed glass with a compressively-stressed surface layer, and the tamper-respondent detector monitors, at least in part, the stressed glass to facilitate defining the secure volume. The stressed glass fragments with an attempted intrusion event through the stressed glass, and the tamper-respondent detector detects the fragmenting of the stressed glass. In certain embodiments, the stressed glass may be a machined glass enclosure that has undergone ion-exchange processing, and the compressively-stressed surface layer of the stressed glass may be compressively-stressed to ensure that the stressed glass fragments into glass particles of fragmentation size less than 1000 ?m with the intrusion event.

Abstract: Embodiments of the present invention provide integrated circuits and methods for activating reactions in integrated circuits. In one embodiment, an integrated circuit is provided having reactive material capable of being activated by electrical discharge, without requiring a battery or similar external power source, to produce an exothermic reaction that erases and/or destroys one or more semiconductor devices on the integrated circuit.

Abstract: An integrated circuit structure and formation thereof. The integrated circuit structure includes a substrate and a front-end-of-the-line (FEOL) portion. The FEOL portion rests on top of and in contact with the substrate. The integrated circuit structure includes a memory level portion. The memory level portion rests on top of and in contact with the FEOL portion. The integrated circuit structure includes a back-end-of-the-line (BEOL) portion. The BEOL portion rests on top of and in contact with the memory level portion. The integrated circuit structure includes a multiple layer that includes one or more pairs of reactive materials. The multiple layer is one or more of: i) on top of the BEOL portion; ii) within the BEOL portion; iii) within the memory level portion; iv) within the FEOL portion; v) embedded in the substrate; and vi) on bottom of a thinned substrate.

Abstract: In one aspect, a method for use in preparing a glass includes performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt. In another aspect, a glass is prepared at least in part by performing an ion exchange process by treating the glass with a eutectic mixture including at least a first rubidium salt.

Abstract: Tamper-proof electronic packages and fabrication methods are provided which include a glass substrate. The glass substrate is stressed glass with a compressively-stressed surface layer. Further, one or more electronic components are secured to the glass substrate within a secure volume of the tamper-proof electronic package. In operation, the glass substrate is configured to fragment with an attempted intrusion event into the electronic package, and the fragmenting of the glass substrate also fragments the electronic component(s) secured to the glass substrate, thereby destroying the electronic component(s). In certain implementations, the glass substrate has undergone ion-exchange processing to provide the stressed glass.

Abstract: An integrated circuit structure and formation thereof. The integrated circuit structure includes a substrate and a front-end-of-the-line (FEOL) portion. The FEOL portion rests on top of and in contact with the substrate. The integrated circuit structure includes a memory level portion. The memory level portion rests on top of and in contact with the FEOL portion. The integrated circuit structure includes a back-end-of-the-line (BEOL) portion. The BEOL portion rests on top of and in contact with the memory level portion. The integrated circuit structure includes a multiple layer that includes one or more pairs of reactive materials. The multiple layer is one or more of: i) on top of the BEOL portion; ii) within the BEOL portion; iii) within the memory level portion; iv) within the FEOL portion; v) embedded in the substrate; and vi) on bottom of a thinned substrate.

Abstract: An integrated circuit structure and formation thereof. The integrated circuit structure includes a substrate and a front-end-of-the-line (FEOL) portion. The FEOL portion rests on top of and in contact with the substrate. The integrated circuit structure includes a memory level portion. The memory level portion rests on top of and in contact with the FEOL portion. The integrated circuit structure includes a back-end-of-the-line (BEOL) portion. The BEOL portion rests on top of and in contact with the memory level portion. The integrated circuit structure includes a multiple layer that includes one or more pairs of reactive materials. The multiple layer is one or more of: i) on top of the BEOL portion; ii) within the BEOL portion; iii) within the memory level portion; iv) within the FEOL portion; v) embedded in the substrate; and vi) on bottom of a thinned substrate.