Abstract: In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property.

Abstract: A semiconductor element-embedded substrate includes a semiconductor element; a chip component; a peripheral insulating layer covering at least the outer circumferential side surfaces thereof; an upper surface-side wiring line provided on the upper surface side of the substrate; and a lower surface-side wiring line provided on the lower surface side of the substrate. The built-in semiconductor element includes a terminal on the upper surface side thereof, and this terminal is electrically connected to the upper surface-side wiring line. The built-in chip component includes an upper surface-side terminal electrically connected to the upper surface-side wiring line; a lower surface-side terminal electrically connected to the lower surface-side wiring line; and a through-chip via penetrating through the chip component to connect the upper surface-side terminal and the lower surface-side terminal.

Abstract: A semiconductor device comprises: a semiconductor element; a support substrate arranged on a surface of the semiconductor element opposite to a surface thereof provided with a pad, the support substrate being wider in area than the semiconductor element; a burying insulating layer on the support substrate for burying the semiconductor element therein; a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area on top of outer periphery of the semiconductor element for augmenting the mechanical strength of the burying insulating layer and the fan-out interconnection.

Abstract: In an oxygen sensor control apparatus, a CPU obtains a correction coefficient for calibrating the relation between output value of an oxygen sensor and oxygen concentration when a fuel cut operation is performed. When the amount of scavenging air (total supply amount of air) becomes equal to or greater than a predetermined amount in each fuel cut period, the CPU calculates an average output value Ipav from a plurality of output values (concentration corresponding values) Ipr of the oxygen sensor, from which values deviating from a predetermined range R1 have been removed. Subsequently, the CPU averages the values obtained in a plurality of fuel cut periods to thereby obtain a plural-time average output value Ipavf. The CPU obtains a correction coefficient for correcting the actual output value Ip of the oxygen sensor 20 on the basis of the Ipavf value and a previously set reference output value.

Abstract: A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer.

Abstract: An object of the present invention is to propose a functional element built-in substrate which enables an electrode terminal of a functional element to be well connected to the back surface on the side opposite to the electrode terminal of the functional element, and which can be miniaturized.

Abstract: A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers.

Abstract: When a detection signal obtained from the cell of a gas sensor (S15) has reached a start determination value (specifically, when the output voltage of the cell is higher than 600 mV (S16: YES) or lower than 300 mV (S17: YES)), a pulse voltage is applied to the cell (S18), and a start-time internal resistance is obtained on the basis of the detection signal having changed as a result of application of the pulse voltage (S20). The start-time internal resistance is compared with a deterioration determination value set in advance (S21). A target resistance of the cell used in temperature control (energization control) for the heater is corrected in accordance with the result of the comparison (S28). Thus, the temperature of the cell can be stably maintained constant irrespective of deterioration of the cell.

Abstract: A thin plate member washing apparatus includes a washing vessel including a lid member and an elongated cylindrical vessel having at one end an opening that is closed by the lid member and in which tap water is contained, and a thin plate member fixing member that is housed in the washing vessel and holds a mesh member whose surface is washed with the tap water by moving within the washing vessel.

Abstract: A nebulizer includes a nebulizer body a relay pipe. The nebulizer body includes a connection portion that has an aerosol lead-out port to lead out aerosol, and the relay pipe includes a connection portion that has an aerosol introduction port to introduce the aerosol. The nebulizer body the relay pipe can take a first connection state in which the relay pipe detachably connected to the nebulizer body and a second connection state in which the relay pipe is connected to the nebulizer body so as to be not able to be detached from the nebulizer body. In the first connection state, the aerosol introduction port and the aerosol lead-out port are communicated with each other. In the second connection state, the aerosol lead-out port is blocked by a blocking portion provided in the relay pipe. Therefore, the nebulizer in which reuse of the nebulizer body or relay pipe is simply prohibited after the usage can be provided by the configuration.

Abstract: A novel NiMnZn-based ferrite which can reduce magnetic loss (core loss) at a high frequency of about 2 MHz or higher and achieve higher saturated magnetic flux density while forming high sintered density is provided. The NiMnZn-based ferrite contains a main component comprising 54.0 to 57.5 mol % of iron oxide in terms of Fe2O3, 2.0 to 7.0 mol % of zinc oxide in terms of ZnO, 0.5 to 4.7 mol % of nickel oxide in terms of NiO, and a remainder of manganese oxide (in terms of MnO); and an accessory component comprising 100 to 1000 ppm by weight of Si in terms of SiO2, 800 to 3000 ppm by weight of Ca in terms of CaCO3, and 520 to 1000 ppm by weight of Nb in terms of Nb2O5 with respect to the main component; while having an average ferrite crystal particle size of 2.1 to 8.5 ?m.

Abstract: In a thin plate member washing apparatus, tap water showering down from water flow holes of a water flow plate makes contact with outer rotary blades and inner rotary blades provided in a rotary supporting member, thereby rotating the rotary supporting member. Moreover, the tap water falling on a mesh member held by a mesh member holding portion flows over a front surface and a back surface of the mesh member based on a centrifugal force due to rotation of the mesh member and removes medicinal fluid residue deposited on the mesh member. The medicinal fluid residue removed from the mesh member is directly carried by the tap water and discharged to the outside of the thin plate member washing apparatus through a fluid outlet opening.

Abstract: A gas sensor comprising: a gas detecting element extending in an axial direction and including a detecting electrode provided on an outer surface of a leading end side of the gas detecting element, and a lead portion connecting to the detecting electrode and extending toward a rear end side of the gas detecting element; a cylindrical metal shell housing the gas detecting element such that the gas detecting element protrudes from a leading end side of the metal shell; a powder layer filling a gap between the gas detecting element and the metal shell and covering at least a portion of the lead portion; and an insulating layer provided between the powder layer and the lead portion. Also disclosed is a method for manufacturing the gas sensor which includes forming the insulating layer by at least: applying a glass paste; drying the glass paste; and heat-treating the glass paste.

Abstract: An ink contains at least a first solid particle, and a second solid particle formed of a base material of a different main component from that of the first solid particle. The first solid particle and the second solid particle have zeta potentials of the same polarity, or zeta potentials of 0±5 mV. The first and second solid particles in the ink have the same surface property, specifically the same interface property in the ink. This makes it possible to use a common dispersant suited for adsorption on the first and second solid particles. In this way, more than one kind of solid particle can be stably dispersed using a sole kind of dispersant.

Abstract: In a semiconductor device in which the semiconductor chip including the external terminal(s) is embedded in an insulating layer and interconnect conductor(s) is (are) formed on the insulating layer, base hole(s) is (are) formed at position(s) of the insulating layer corresponding to the external terminal(s) in a state where the semiconductor chip has shrunk after having been embedded in the insulating layer. The interconnect conductor(s) is (are) electrically connected to the external terminal(s) through the base hole(s).

Abstract: There is provided a method for forming a conductor, including a first printing step of printing a contour part of the conductor with a first printing ink, a drying step of drying the printed contour part, and a second printing step of printing a remaining part of the conductor with a second printing ink, wherein the second printing ink contains a conductive material and has a surface tension lower than or equal to a surface tension of the first printing ink.

Abstract: There is provided an ink for printing a conductor pattern on a substrate, including platinum particles, wherein 70% or more of the platinum particles have a particle size of 0.05 to 0.5 ?m. Even when the viscosity of the printing ink is controlled to a relatively low level for use in ink-jet printing process, it is possible by such particle size distribution control to prevent sedimentation of the platinum particles and excessive shrinkage of the conductor pattern due to sintering of the platinum particles during firing so that the conductor pattern can attain improved conduction characteristics.

Abstract: There is provided a method for forming a conductor pattern on a substrate in such a manner that the conductor pattern has a lead portion extending in a longitudinal direction thereof, a first conductor portion located at one end of the lead portion and a second conductor portion located at the other end of the lead portion, including a printing step of printing at least the lead portion by ink-jet printing process, i.e., scanning a print head while discharging liquid ink drops from nozzles of the prink head, wherein the scanning of the print head is performed in the longitudinal direction of the conductor pattern during the printing step; and wherein the length of each of the first and second conductor portions in a direction perpendicular to the longitudinal direction of the conductor pattern is larger than the diameter of the ink drop.

Abstract: A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism).

Abstract: In a pedometer serving as a walking posture determination apparatus, horizontal-axis acceleration data is synchronized with and superimposed on vertical-axis acceleration data so as to extract vertical-axis acceleration in a right foot walking period and vertical-axis acceleration in a left foot walking period. Then, the difference YR?YL between the maximum amplitude YR of right foot acceleration and the maximum amplitude YL of left foot acceleration, or the ratio YR/YL therebetween is calculated as an index value to be used in a stride length determination. The pedometer then references pre-stored associations between index values and stride length levels, and determines the stride length level associated with the calculated index value to be the stride length level of the measurement subject.