Abstract: A control device for a hybrid vehicle is equipped with an engine, an electric motor, and a damper that is interposed in a motive power transmission path between the engine and the electric motor. The control device is equipped with a hysteresis mechanism and a controller. The hysteresis mechanism is provided in the damper, is configured to have a characteristic that a hysteresis torque that is generated due to a twist of the damper, which transmits a driving force from the electric motor toward the engine, in a negative direction is larger than a hysteresis torque that is generated due to a twist of the damper, which transmits a driving force from the engine toward the electric motor, in a positive direction, and is configured to reduce an engine rotational speed by the electric motor in stopping the engine.

Abstract: A nonvolatile semiconductor memory device including: a memory cell array including NAND strings; a plurality of word lines; a plurality of bit lines; a source line; and a control circuit configured to execute a write operation. The control circuit is configured to, when charging an unselected memory string prior to the write operation, execute both first and second charging operations, the first charging operation applying to the bit line connected to the unselected memory string a first voltage and rendering conductive a first select transistor to charge the unselected memory string, and the second charging operation applying to the source line connected to the unselected memory string a second voltage and rendering conductive a second select transistor to charge the unselected memory string, the first and second charging operations being executed at different timings.

Abstract: A drive control device for a hybrid vehicle is provided with a differential device including four rotary elements; and an engine, a first electric motor, a second electric motor and an output rotary member which are respectively connected to the four rotary elements. One of the four rotary elements is constituted by a rotary component of a first differential mechanism and a rotary component of a second differential mechanism which are selectively connected to each other through a clutch, and one of the rotary components of the first and second differential mechanisms which are selectively connected to each other through the clutch is selectively fixed to a stationary member through a brake. The drive control device comprises: a clutch engagement control portion configured to place the clutch in an engaged state when a warm-up operation of the hybrid vehicle is required.

Abstract: A control apparatus for a vehicle provided with an engine, an electric motor, and a damper disposed in a power transmitting path between said engine and said electric motor, wherein said engine is started with its speed being raised by a drive force of said electric motor, wherein said damper has characteristics of generating a larger hysteresis torque during its torsion in a negative direction of transmission of the drive force from said electric motor toward said engine, than a hysteresis torque generated during its torsion in a positive direction of transmission of a drive force from said engine toward said electric motor, said control apparatus comprising a hybrid control portion configured to ignite said engine by igniting said engine in the process of a rise of the speed of said engine while said damper is subjected to the torsion in the negative direction by said electric motor.

Abstract: A drive control device for a hybrid vehicle is provided with a differential device including four rotary elements; and an engine, a first electric motor, a second electric motor and an output rotary member which are respectively connected to the four rotary elements. One of the four rotary elements is constituted by a rotary component of a first differential mechanism and a rotary component of a second differential mechanism which are selectively connected to each other through a clutch, and one of the rotary components of the first and second differential mechanisms which are selectively connected to each other through the clutch is selectively fixed to a stationary member through a brake. The drive control device comprises: a clutch engagement control portion configured to place the clutch in an engaged state when a warm-up operation of the hybrid vehicle is required.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A drive control device for a hybrid vehicle is provided with a differential device including four rotary elements; and an engine, first and second electric motors and an output rotary member which are respectively connected to the four rotary elements. One of the four rotary elements is constituted by a rotary component of a first differential mechanism and a rotary component of a second differential mechanism selectively connected through a clutch, and one of the rotary components of the first and second differential mechanisms which are selectively connected to each other through the clutch is selectively fixed to a stationary member through a brake. The drive control device comprises: an electric motor operation control portion configured to control the second electric motor for starting the engine with an output torque of the second electric motor, when a reaction force is exerted on the first and second electric motors.

Abstract: An antipruritic against pruritus caused by multiple sclerosis is disclosed.

Abstract: Disclosed is a shift range switching apparatus of an automatic transmission which can improve the durability over the conventional shift range switching apparatus. An ECU is operative to rotate an actuator in a predetermined direction (Step S2) in the state of the automatic transmission switched to a predetermined shift range (Step S1), and thereafter the actuator is deenergized (Step S3). The reference position of the actuator corresponding to the predetermined shift range is detected (Step S5) in accordance with the fluctuation of the count value counted by an encoder when the actuator is deenergized (Step S4).

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A drive control device for a hybrid vehicle is provided with a differential device including four rotary elements; and an engine, a first electric motor, a second electric motor and an output rotary member which are respectively connected to the four rotary elements. One of the four rotary elements is constituted by a rotary component of a first differential mechanism and a rotary component of a second differential mechanism which are selectively connected to each other through a clutch, and one of the rotary components of the first and second differential mechanisms which are selectively connected to each other through the clutch is selectively fixed to a stationary member through a brake. The drive control device comprises: a clutch engagement control portion configured to place the clutch in an engaged state when a warm-up operation of the hybrid vehicle is required.

Abstract: A drive control device for a hybrid vehicle is provided with a differential device including four rotary elements; and an engine, first and second electric motors and an output rotary member which are respectively connected to the four rotary elements. One of the four rotary elements is constituted by a rotary component of a first differential mechanism and a rotary component of a second differential mechanism selectively connected through a clutch, and one of the rotary components of the first and second differential mechanisms which are selectively connected to each other through the clutch is selectively fixed to a stationary member through a brake. The drive control device comprises: an electric motor operation control portion configured to control the second electric motor for starting the engine with an output torque of the second electric motor, when a reaction force is exerted on the first and second electric motors.

Abstract: A control circuit executes an erase operation that includes an erase pulse application operation and an erase verify operation. The erase pulse application operation applies an erase pulse voltage to a memory cell to change the memory cell from a write state to an erase state. The erase verify operation applies an erase verify voltage to the memory cell to judge whether the memory cell is in the erase state or not. The control circuit changes conditions of execution of the erase verify operation when the number of times of executions of the erase pulse application operation in one erase operation reaches a first number.

Abstract: A semiconductor storage device has a plurality of memory cells each having a control gate that are formed on a well. The semiconductor storage device has a control circuit that applies a voltage to the well and the control gates. In an erase operation of the memory cell, the control circuit applies a first pulse wave of a first erasure voltage that rises stepwise to the well and then applies a second pulse wave of a second erasure voltage to the well.

Abstract: A nonvolatile semiconductor memory device including: a memory cell array including NAND strings; a plurality of word lines; a plurality of bit lines; a source line; and a control circuit configured to execute a write operation. The control circuit is configured to, when charging an unselected memory string prior to the write operation, execute both first and second charging operations, the first charging operation applying to the bit line connected to the unselected memory string a first voltage and rendering conductive a first select transistor to charge the unselected memory string, and the second charging operation applying to the source line connected to the unselected memory string a second voltage and rendering conductive a second select transistor to charge the unselected memory string, the first and second charging operations being executed at different timings.

Abstract: A non-volatile semiconductor memory device according to embodiments has a memory cell array and a reading circuit, and, in a reading sequence, the reading circuit executes a prereading operation of supplying a first reading voltage to an adjacent word line and supplying a first reading pass voltage to a selected word line, and after executing the prereading operation, executes a main reading operation of supplying a fixed second reading voltage to the selected word line and supplying a fixed second reading pass voltage to the adjacent word line while sensing a plurality of electrical physical amounts of a target memory cell with different reading conditions.

Abstract: An ECU is connected to a multi-system shift sensor detecting a shift lever position in a shift direction associated with detection of the R position, and to a multi-system select sensor detecting a shift lever position in a select direction not associated with detection of the R position. When only one or more, but not all, of sensors in the select sensor are abnormal, the ECU controls the shift range according to the shift position detected based on the remaining proper sensor. When only one or more of sensors in the shift sensor are abnormal, the ECU maintains the current range until an operation of a shift lever is detected, and switches the shift range to the N range at the point of time of detecting an operation of the shift lever.

Abstract: An HV-ECU executes a program including a step (S102) of turning on a fail-safe permission flag if a select sensor is abnormal (YES in step S100), and a step (S108) of transmitting a non-P request signal to a P-ECU if the position of a shift lever is read as the N position (YES in S104) and a predetermined time Tn(2) elapses (YES in S106).

Abstract: It is provided a shift control device for a vehicle having a parking lock device driven by an actuator to selectively switch switching positions between a lock position and an unlock position, wherein when a run-enable operation is made by a driver and a non-running state is switched to a running state, shift position recognizing control is executed for recognizing an initial switching position appearing at the beginning when the running state is established, by driving the actuator in response to switching position information indicative of the switching position on a stage before the running state is established, wherein: the non-running state is configured to be switched to the running state prior to the execution of the run-enable operation; and updating of the switching position information, stored in the switching position information storage device, is permitted to be executed subjected to the switching position recognizing control being executed.

Abstract: A nonvolatile semiconductor memory device according to the embodiment comprises a memory cell array including plural memory cells operative to store data nonvolatilely in accordance with plural different threshold voltages; and a control unit operative to, in data write to the memory cell, execute write loops having a program operation for changing the threshold voltage of the memory cell and a verify operation for detecting the threshold voltage of the memory cell after the program operation, the control unit, in data write for changing one threshold voltage of the plural threshold voltages, executing the verify operation, when the number of write loops to the memory cell becomes more than a certain defined number, using a condition that can pass the verify operation easier than that when the number of write loops is equal to or less than the certain defined number.