Abstract: It is provided a vehicle shift control device electrically switching a shift position between a parking position and a non-parking position, the vehicle being capable of switching a vehicle state among a first state, a second state and a third state, when an operation for switching the vehicle state is performed in the first state, if a vehicle speed is a predetermined speed or less, switching is executed to the parking position and, after completion of the switching, the vehicle state is switched to the third state, whereas when plural-times of the operations are performed successively during the vehicle running, the vehicle state is compulsorily switched to the second state, and when at least one operation of the plural-times of the operations is performed if the vehicle speed is the predetermined speed or less, switching to the parking position is executed prior to switching to the second state.

Abstract: A non-volatile semiconductor memory device according to one embodiment of the present invention includes a memory cell array and a control unit. The control unit is configured to control a repeat of an erase operation, an erase verify operation, and a step-up operation. The control unit is configured to perform a soft-programming operation of setting the memory cells from an over-erased state to a first threshold voltage distribution state when, in a series of erase operations, the number of erase voltage applications is more than a first number and less than a second number (the first number<the second number). The control unit is configured not to perform the soft-programming operation when the number of erase voltage applications is equal to or less than the first number or equal to or more than the second number.

Abstract: A control device for a hybrid vehicle is equipped with an engine, an electric motor, and a damper that is interposed in a motive power transmission path between the engine and the electric motor. The control device is equipped with a hysteresis mechanism and a controller. The hysteresis mechanism is provided in the damper, is configured to have a characteristic that a hysteresis torque that is generated due to a twist of the damper, which transmits a driving force from the electric motor toward the engine, in a negative direction is larger than a hysteresis torque that is generated due to a twist of the damper, which transmits a driving force from the engine toward the electric motor, in a positive direction, and is configured to reduce an engine rotational speed by the electric motor in stopping the engine.

Abstract: A vehicular shift control apparatus for a vehicle provided with a parking lock device selectively switched to a locking position in which rotation of wheels of the vehicle is prevented and a non-locking position in which the rotation of the wheels is not prevented, by an operation of an electrically operated actuator, the vehicular shift control apparatus being configured to perform a failure diagnosis to determine whether the actuator is operable or not, the vehicular shift control apparatus includes: the vehicular shift control apparatus permits the operation of the actuator if a supply voltage to the actuator is raised from a value lower than a predetermined threshold supply voltage value to a value not lower than the threshold supply voltage value after a determination that the actuator is inoperable is obtained in the failure diagnosis.

Abstract: A shift control device for vehicle is provided capable of controlling an actuator to switch shift ranges of a transmission and switching establishment of operating states between a first operating state enabling a detection of a reference position for controlling the actuator during an initial operation of the actuator, and a second operating state disabling the detection of the reference position, besides the first and second operating states, a third operating state being able to be established with an inability to detect the reference position but with an ability to detect vehicle information; and when the second operating state is switched to the first operating state with the third operating state continuously remained, after switching from the first operating state to the second operating state, the reference position being detected again.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

Abstract: A shift control device is provided for a vehicle of shift-by-wire type having shift operation detecting means electrically detecting a shift operation of a driver, range switching means switching a shift range in response to the shift operation of the driver, failure detecting means detecting a failure in a shift operation detection executed by the shift operation detecting means, and vehicle state detecting means detecting a vehicle state upon detection of the failure in the shift operation detection, the range switching means being switched to a fail-safe mode, when the shift operation detection is recovered from a failed state to a normal state and the range switching means is switched from the fail-safe mode to a normal control mode, a recovery condition for determining switching of the fail-safe mode to the normal control mode being altered depending on the vehicle state.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.

Abstract: A semiconductor storage device has a memory cell array including memory cells and a plurality of redundancy regions arranged in a first direction including flag cells, plural word lines extending in the first direction, and plural bit lines extending in a second direction crossing the first direction, and a controller configured to control writing of data to the memory cells and also to the flag cells.

Abstract: In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

Abstract: It is provided a vehicle shift control apparatus that electrically controls switchover of a shift range of a transmission based on a position signal corresponding to an operational position in a shift operating device, the vehicle shift control apparatus being capable of storing therein a determination result of whether the position signal is normal or abnormal, the shift range being switched based on the position signal acquired when a vehicle electric power supply is turned on if a memory of the determination result is retained when the vehicle electric power supply is turned on, the shift range not being switched based on the position signal acquired when the vehicle electric power supply is turned on if the memory of the determination result is not retained.

Abstract: In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost portions at both ends of the first device-isolation insulator film are located higher than the uppermost portions at both ends of the second device-isolation insulator film.

Abstract: A non-volatile semiconductor memory device according to one embodiment of the present invention includes a memory cell array and a control unit. The control unit is configured to control a repeat of an erase operation, an erase verify operation, and a step-up operation. The control unit is configured to perform a soft-programming operation of setting the memory cells from an over-erased state to a first threshold voltage distribution state when, in a series of erase operations, the number of erase voltage applications is more than a first number and less than a second number (the first number<the second number). The control unit is configured not to perform the soft-programming operation when the number of erase voltage applications is equal to or less than the first number or equal to or more than the second number.

Abstract: It is provided a shifting control device for vehicle for electrically controlling a switching of a transmission to a parking range for performing a parking lock in response to an operation by a driver, the shifting control device for vehicle configured to determine the switching to the parking range when the driver performs a predetermined operation for switching to the parking range, based on whether plural vehicle speed signals different in response relative to an actual vehicle speed satisfy a predetermined condition; and the switching to the parking range being determined (i) using a corrected value obtained by correcting a vehicle speed signal having a slower response such that a difference in a vehicle speed based on the vehicle speed signal having the slower response and a vehicle speed signal having a quicker response is suppressed, or (ii) using a corrected value obtained by correcting a predetermined vehicle-speed threshold value associated with the vehicle speed signal having the quicker response s

Abstract: A non-volatile semiconductor memory device according to one embodiment of the present invention includes a memory cell array and a control unit. The control unit is configured to control a repeat of an erase operation, an erase verify operation, and a step-up operation. The control unit is configured to perform a soft-programming operation of setting the memory cells from an over-erased state to a first threshold voltage distribution state when, in a series of erase operations, the number of erase voltage applications is more than a first number and less than a second number (the first number<the second number). The control unit is configured not to perform the soft-programming operation when the number of erase voltage applications is equal to or less than the first number or equal to or more than the second number.

Abstract: A nonvolatile semiconductor memory device according to the embodiment comprises a memory cell array including plural memory cells operative to store data nonvolatilely in accordance with plural different threshold voltages; and a control unit operative to, in data write to the memory cell, execute write loops having a program operation for changing the threshold voltage of the memory cell and a verify operation for detecting the threshold voltage of the memory cell after the program operation, the control unit, in data write for changing one threshold voltage of the plural threshold voltages, executing the verify operation, when the number of write loops to the memory cell becomes more than a certain defined number, using a condition that can pass the verify operation easier than that when the number of write loops is equal to or less than the certain defined number.

Abstract: It is provided a vehicle shift control device electrically switching a shift position between a parking position and a non-parking position, the vehicle being capable of switching a vehicle state among a first state, a second state and a third state, when an operation for switching the vehicle state is performed in the first state, if a vehicle speed is a predetermined speed or less, switching is executed to the parking position and, after completion of the switching, the vehicle state is switched to the third state, whereas when plural-times of the operations are performed successively during the vehicle running, the vehicle state is compulsorily switched to the second state, and when at least one operation of the plural-times of the operations is performed if the vehicle speed is the predetermined speed or less, switching to the parking position is executed prior to switching to the second state.

Abstract: A semiconductor storage device has a plurality of memory cells each having a control gate that are formed on a well. The semiconductor storage device has a control circuit that applies a voltage to the well and the control gates. In an erase operation of the memory cell, the control circuit applies a first pulse wave of a first erasure voltage that rises stepwise to the well and then applies a second pulse wave of a second erasure voltage to the well.

Abstract: A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control circuit executes a first reading operation and a second reading operation. The first reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between a control gate electrode and source of the selected memory cell to a first value. The second reading operation is an operation of reading a threshold voltage set in the selected memory cell by setting a voltage between the control gate electrode and source of the selected memory cell to a second value lower than the first value. When executing the second reading operation, the control circuit keeps a voltage of the control gate electrode of the selected memory cell to 0 or a positive value.