Abstract: In one aspect, an apparatus for use in a wellbore is disclosed, including: an inlet; an outlet; and a variable flow restriction configured to provide a predetermined constant pressure drop between the inlet and the outlet in response to a range of inlet flow rates. In another aspect, a method for providing a fluid flow within a wellbore is disclosed, including: providing the fluid flow to an inlet; restricting the fluid flow to provide a predetermined constant pressure drop between the inlet and an outlet in response to a range of fluid flow rates; and providing the fluid flow to the wellbore from the outlet.

Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a trench isolation region, a resistor-forming region is provided. A first ILD layer covers the first region, the second region, and the resistor-forming region. A resistor material layer and a capping layer are formed over the first region, the second region, and the resistor-forming region. The capping layer and the resistor material layer are patterned to form a first hard mask pattern above the first and second regions and a second hard mask pattern above the resistor-forming region. The resistor material layer is isotropically etched. A second ILD layer is formed over the substrate. The second ILD layer and the first ILD layer are patterned with a mask and the first hard mask pattern to form a contact opening.

Abstract: A semiconductor device includes a first gate line, a second gate line and a first bar-shaped contact structure. The first gate line has a first long axis extending along a first direction. The second gate line is parallel to the first gate line. The first bar-shaped contact structure has a second axis forming an angle substantially greater than 0° and less than 90° with the first long axis.

Abstract: Disclosed is a lighting device (100) comprising a tubular body (120), said tubular body comprising a carrier (130) mounted inside the tubular body such that the tubular body comprises a first inner volume (102) delimited by a first arcuate section (121) of the tubular body and the carrier; and a second inner volume (104) delimited by a second arcuate section (124) of the tubular body and the carrier, wherein the carrier supports a plurality of solid state lighting elements (32) arranged to emit a luminous output into the first inner volume; and the first arcuate section (121) comprises a transparent region (123) and a translucent region (122) obscuring the solid state lighting elements, said transparent region extending from the translucent region to the carrier; wherein the carrier (130) comprises a central region extending along the length of the tubular body (120), and defining a recess in which the solid state lighting elements (32) are located, which recess prevents the solid state lighting elements (32)

Abstract: An environmentally responsible, optically efficient, low glare lighting device comprises: a tubular body (1); a first plurality of solid state light emitting elements (2) arranged on a first surface of a first carrier (3) inside said tubular body; and a flexible reflective sheet (4) covering said first surface and a first part of an inner surface of the tubular body (1) to an extent (6) sufficient to obscure direct visibility of the light emitting surface of the first light emitting elements (2) if viewed through a light outlet portion (5) from a location external to the tubular body (1), wherein said light outlet portion includes a second part of the inner surface that is not covered by the flexible reflective sheet. A convenient method for manufacturing the device is also described.

Abstract: A method for fabricating a semiconductor device is provided including providing a substrate, on which a plurality of elements is formed. A first inter-dielectric layer is formed over the substrate, covering the elements. A first plug structure is formed in the first inter-dielectric layer, including performing a polishing process over the first inter-dielectric layer to have a dishing on top and extending from a sidewall of the first plug structure. A hard mask layer is formed to fill the dishing. A second inter-dielectric layer is formed over the hard mask layer. A second plug structure is formed in the second inter-dielectric layer to electrically contact the first plug structure, wherein the second plug structure has at least an edge portion extending on the hard mask layer.

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer, an interlayer dielectric layer, a first plug and a protection layer. The fin shaped structure is disposed on a substrate, and the gate structure is across the fin shaped structure. The epitaxial layer is disposed in the fin shaped structure, adjacent to the gate structure. The interlayer dielectric layer covers the substrate and the fin shaped structure. The first plug is formed in the interlayer dielectric layer, wherein the first plug is electrically connected to the epitaxial layer. The protection layer is disposed between the first plug and the gate structure.

Abstract: A method for forming a semiconductor structure is disclosed. The method includes the following steps. A first pattern structure and a second pattern structure are formed on a substrate. The second pattern structure is wider than the first pattern structure. Spacers are formed on sidewall surfaces of the first pattern structure and the second pattern structure. An oxidizing treatment step is performed to the spacers having a width gradually increased from tops of the spacers. A pattern defined with the spacers is transferred into the substrate after the oxidizing treatment step.

Abstract: A KVM switch is disclosed. The KVM switch, for connecting between computers and at least one peripheral device, the KVM switch includes a first interface, second interfaces, a controller and device emulators. The controller is configured to receive a peripheral signal and generate a first serial signal and a second serial signal. Each of the device emulators is configured to receive the first serial signal with the a target address and the second serial signal with a second target address, and each of the device emulators is guided by unique address to one of the computers, respectively, wherein, when the device emulators receive the first serial signal and the second serial signal, the device emulators are configured to determine whether to process the first serial signal and the second serial signal by comparing the first target address and the second target address with the unique address.

Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a trench isolation region, a resistor-forming region is provided. A first ILD layer covers the first region, the second region, and the resistor-forming region. A resistor material layer and a capping layer are formed over the first region, the second region, and the resistor-forming region. The capping layer and the resistor material layer are patterned to form a first hard mask pattern above the first and second regions and a second hard mask pattern above the resistor-forming region. The resistor material layer is isotropically etched. A second ILD layer is formed over the substrate. The second ILD layer and the first ILD layer are patterned with a mask and the first hard mask pattern to form a contact opening.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.

Abstract: The invention provides a solid state lighting device having an adjustable light output direction. In embodiments, an adjustable reflector element is provided, which is transitionable between at least a first and second orientation status, in order thereby to alter through which one or more of the light exit surfaces of the device the generated luminous output is directed.

Abstract: First, a substrate having a first region and a second region is provided, a first gate structure is formed on the first region and a second gate structure is formed on the second region, an interlayer dielectric (ILD) layer is formed around the first gate structure and the second gate structure, and the first gate structure and the second gate structure are removed to expose the substrate on the first region and the second region. Next, part of the substrate on the first region is removed to form a first recess and part of the substrate on the second region is removed to form a second recess, in which the depths of the first recess and the second recess are different. Next, a first metal gate is formed on the first region and a second metal gate is formed on the second region.

Abstract: The present invention provides a massaging device having two opposite massaging surfaces for massaging human body. A heating unit is encapsulated inside a casing, and the casing includes two parts that are releasably connected to each other, each part having a truncated shape of oblate spheroid. The invention exhibits numerous technical merits such as simpler but robust structure, improved manufacturability, and capability of maintaining warm temperature for longer period of time, among others.

Abstract: First, a substrate having a first region and a second region is provided, a first gate structure is formed on the first region and a second gate structure is formed on the second region, an interlayer dielectric (ILD) layer is formed around the first gate structure and the second gate structure, and the first gate structure and the second gate structure are removed to expose the substrate on the first region and the second region. Next, part of the substrate on the first region is removed to form a first recess and part of the substrate on the second region is removed to form a second recess, in which the depths of the first recess and the second recess are different. Next, a first metal gate is formed on the first region and a second metal gate is formed on the second region.

Abstract: There is provided a lighting device (100) comprising a first tubular body (120), a second tubular body (130) within the first tubular body (120), and a support structure within the first tubular body (120). The support structure supports a plurality of Solid State Lighting (SSL) elements (160) on a support surface, said SSL elements being arranged to emit light under a range of angles including a first range. The support structure is fixed within the first tubular body (120) by the first tubular body (120) and the second tubular body (130). The support structure comprises a tube receiving member (156) extending from the support surface, said tube receiving member engaging with the second tubular body (130).

Abstract: Present disclosure relates to a HID switch with security function that permits sharing of peripherals between multiple computers in a multi-network computer system. The HID switch is configured to connect at least one user input peripheral device and at least two host computers. The HID switch incudes a first directing module and a second directing module, wherein the two directing modules are physically isolated. The passages directed to the two directing modules are controlled by a physical peripheral selector. The physical peripheral selector is configured to selectively enable the first passage and the second passage, wherein only one of the first and second passages is to enabled at a time. When one of the first or the second passages is enabled, there is only one host computer is electrically connected to the user input peripheral device via one of the directing modules.

Abstract: A convertible bicycle has separable front and rear wheel units. The convertible bicycle can operate in individual or in tandem mode as a tricycle unit. The rear wheel unit has a vertical interlocking gear which can interface with a frontal interlocking gear of the frontal wheel unit. The front wheel unit of an auxiliary bicycle can be detached and the remaining rear wheel unit attached to the rear wheel unit of another bicycle in order to form a tandem tricycle.

Abstract: Provided is an omni-directional LED lamp including a lamp tube. The lamp tube includes an LED light source contained therein. In one embodiment, the LED light source includes at least one omni-directional LED lamp bar. Loose and light-permeable ceramic granule materials are filled into the lamp tube in a space between an inner wall of the tube and the LED light source. The loose light-permeable ceramic granule materials are coated on and contact to the irregular surface of the light source so as to reduce the thermal resistance and increase the heat conduction. Light diffuse reflection effects caused among the ceramic granules are positive that they can soften the light, reduce glaring and dazzling and prevent the blue light from leaking-out.

Abstract: There is provided a thermostat system comprising a HVAC interface module for controlling an external HVAC system; at least one of a wide-area communication module for data communication with an external network and a local communication module for data communication over a home automation network; and a processor configured for: receiving selection of an in-use schedule dataset; receiving environmental control rules; and controlling the HVAC interface module based on the in-use schedule dataset and the environmental control rules. Methods for controlling a HVAC system are also provided.