Patents by Inventor Kun Yuan

Kun Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9530851
    Abstract: The present invention provides a semiconductor device, including at least two gate structures, and each gate structure includes a gate, a spacer and a source/drain region, the source/drain region disposed on two sides of the gate. A first dielectric layer is disposed on the substrate and between two gate structures, where the first dielectric layer has a concave surface, and the first dielectric layer directly contacts the spacer. A floating spacer is disposed on the first dielectric layer and on a sidewall of the gate, and at least one contact plug is disposed on the source/drain region, where the contact plug directly contacts the floating spacer.
    Type: Grant
    Filed: August 31, 2015
    Date of Patent: December 27, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Lin Lu, Chun-Lung Chen, En-Chiuan Liou, Chih-Wei Yang, Yu-Cheng Tung, Kun-Yuan Liao, Feng-Yi Chang
  • Publication number: 20160334066
    Abstract: Disclosed is a lighting device (100) comprising a tubular body (120), said tubular body comprising a carrier (130) mounted inside the tubular body such that the tubular body comprises a first inner volume (102) delimited by a first arcuate section (121) of the tubular body and the carrier; and a second inner volume (104) delimited by a second arcuate section (124) of the tubular body and the carrier, wherein the carrier supports a plurality of solid state lighting elements (32) arranged to emit a luminous output into the first inner volume; and the first arcuate section (121) comprises a transparent region (123) and a translucent region (122) obscuring the solid state lighting elements, said transparent region extending from the translucent region to the carrier; wherein the carrier (130) comprises a central region extending along the length of the tubular body (120), and defining a recess in which the solid state lighting elements (32) are located, which recess prevents the solid state lighting elements (32)
    Type: Application
    Filed: January 12, 2015
    Publication date: November 17, 2016
    Inventors: Mou Kun YUAN, Xuefei YANG, Zhong WANG
  • Patent number: 9490334
    Abstract: A semiconductor device having metal gate includes a substrate, a first metal gate positioned on the substrate, and a second metal gate positioned on the substrate. The first metal gate includes a first work function metal layer, and the first work function metal layer includes a taper top. The second metal gate includes a second work function metal layer. The first work function metal layer and the second work function metal layer are complementary to each other.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: November 8, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang
  • Publication number: 20160322468
    Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate; a gate structure on the substrate; an interlayer dielectric (ILD) around the gate structure; a first contact plug in the ILD layer; a second dielectric layer on the ILD layer; a second contact plug in the second dielectric layer and electrically connected to the first contact plug; and a spacer between the second contact plug and the second dielectric layer.
    Type: Application
    Filed: May 28, 2015
    Publication date: November 3, 2016
    Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, Chieh-Te Chen, Wei-Hao Huang
  • Patent number: 9455135
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a hard mask on the gate structure and the ILD layer; forming a first patterned mask layer on the hard mask; using the first patterned mask layer to remove part of the hard mask for forming a patterned hard mask; and utilizing a gas to strip the first patterned mask layer while forming a protective layer on the patterned hard mask, wherein the gas is selected from the group consisting of N2 and O2.
    Type: Grant
    Filed: December 7, 2014
    Date of Patent: September 27, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, En-Chiuan Liou, Chieh-Te Chen
  • Publication number: 20160277381
    Abstract: Described are a security check method and system, a terminal, and a verification server.
    Type: Application
    Filed: May 31, 2016
    Publication date: September 22, 2016
    Inventors: Kun YUAN, Maofeng LEI, Xiaolong ZHOU, Ken CHEN, Xiaowei JIANG, Yuanbiao XIAO, Chenggui MA
  • Publication number: 20160268203
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.
    Type: Application
    Filed: April 8, 2015
    Publication date: September 15, 2016
    Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, Chih-Sen Huang, Ching-Wen Hung, Wei-Hao Huang
  • Publication number: 20160223143
    Abstract: An environmentally responsible, optically efficient, low glare lighting device comprises: a tubular body (1); a first plurality of solid state light emitting elements (2) arranged on a first surface of a first carrier (3) inside said tubular body; and a flexible reflective sheet (4) covering said first surface and a first part of an inner surface of the tubular body (1) to an extent (6) sufficient to obscure direct visibility of the light emitting surface of the first light emitting elements (2) if viewed through a light outlet portion (5) from a location external to the tubular body (1), wherein said light outlet portion includes a second part of the inner surface that is not covered by the flexible reflective sheet. A convenient method for manufacturing the device is also described.
    Type: Application
    Filed: September 11, 2014
    Publication date: August 4, 2016
    Inventor: Mou Kun YUAN
  • Patent number: 9406516
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: August 2, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jian-Cun Ke, Chih-Wei Yang, Kun-Yuan Lo, Chia-Fu Hsu, Shao-Wei Wang
  • Publication number: 20160216829
    Abstract: A method for making input devices connected to a smartphone to function as touch control to the smartphone is disclosed. The method includes the steps of: a) operatably connecting the handheld computer to a personal computer with an input device; b) presenting the input device to be a virtual touch sensitive device to the handheld computer when the input device is a non-touch sensitive device; c) converting a first touch event of the input device into a second touch event compatible to the handheld computer when the input device is a touch sensitive device and is being touched; and d) sending the second touch event to the handheld computer.
    Type: Application
    Filed: December 18, 2015
    Publication date: July 28, 2016
    Applicant: I/O INTERCONNECT, LTD.
    Inventors: Kun-Yuan Lin, Chung-Han Hsieh
  • Publication number: 20160216952
    Abstract: The invention provides a method for directly using input devices of a personal computer to operate a mobile device connected thereto. The method includes: a) designating a specific USB port in the personal computer; b) detecting whether the mobile device is connected to the specific USB port; c) checking whether the mobile device has been installed with a first driver; d) installing the first driver to the mobile device; e) sending a command to the mobile device to make it serve as a GOOGLE accessory device; f) installing a second driver in the personal computer for the mobile device as a GOOGLE accessory device; g) transferring a control right of an input device of the personal computer to the mobile device; h) converting signals of the input device into a format compatible with the mobile device; and i) sending the converted signals to the mobile device.
    Type: Application
    Filed: January 27, 2015
    Publication date: July 28, 2016
    Applicant: I/O INTERCONNECT INC.
    Inventors: Ping-Shun Zeung, Hou-Hao Hsun, Kun-Yuan Lin
  • Publication number: 20160216861
    Abstract: The invention provides a method for changing a touch control function when a smartphone is connected to a computer with a touchscreen. The method includes the steps: a) operationally connecting the desktop computer to the handheld touchscreen computer to project a screen picture of the handheld touchscreen computer on the touchscreen, wherein the screen picture contains a first item, and a second item corresponding to the first item is shown on the touchscreen; b) pressing and holding the second item for more than one second; c) sending a touch event about the operation to the second item from the desktop computer to the handheld touchscreen computer; and d) performing a pressing-and-holding operation to the first item by the handheld touchscreen computer according to the touch event.
    Type: Application
    Filed: September 23, 2015
    Publication date: July 28, 2016
    Applicant: I/O INTERCONNECT INC.
    Inventors: Hao-Hsun Hou, Kun-Yuan Lin
  • Publication number: 20160216782
    Abstract: The method includes the steps of: a) connecting a handheld touchscreen computer with a first display to a personal computer with a second display and mouse, wherein a screen picture of the handheld touchscreen computer is projected on the second display as a subwindow, and a cursor is shown on the second display; b) directly moving the cursor by the mouse when no item in the subwindow is clicked; c) calculating a displacement quantity of the cursor against a virtual origin of the subwindow when an item in the subwindow is being clicked; and d) generating a mouse event to an item of the handheld touchscreen computer at a position corresponding to the displacement quantity.
    Type: Application
    Filed: October 28, 2015
    Publication date: July 28, 2016
    Applicant: I/O INTERCONNECT, LTD.
    Inventors: Kun-Yuan Lin, Chung-Han Hsieh
  • Publication number: 20160172300
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure; forming a sacrificial layer on the gate structure; forming a first contact plug in the sacrificial layer and the ILD layer; removing the sacrificial layer; and forming a first dielectric layer on the gate structure and the first contact plug.
    Type: Application
    Filed: January 8, 2015
    Publication date: June 16, 2016
    Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, Chieh-Te Chen
  • Publication number: 20160163532
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a hard mask on the gate structure and the ILD layer; forming a first patterned mask layer on the hard mask; using the first patterned mask layer to remove part of the hard mask for forming a patterned hard mask; and utilizing a gas to strip the first patterned mask layer while forming a protective layer on the patterned hard mask, wherein the gas is selected from the group consisting of N2 and O2.
    Type: Application
    Filed: December 7, 2014
    Publication date: June 9, 2016
    Inventors: Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, En-Chiuan Liou, Chieh-Te Chen
  • Patent number: 9337084
    Abstract: The present invention provides a method for manufacturing contact holes of a semiconductor device, including a first dielectric layer is provided, a first region and a second region are defined on the first dielectric layer respectively, at least two cutting hard masks are formed and disposed within the first region and the second region respectively, at least two step-height portions disposed right under the cutting hard masks respectively. Afterwards, at least one first slot opening within the first region is formed, where the first slot opening partially overlaps the cutting hard mask and directly contacts the cutting hard mask, and at least one second contact opening is formed within the second region, where the second contact opening does not contact the cutting hard mask directly, and at least two contact holes are formed, where each contact hole penetrates through each step height portion.
    Type: Grant
    Filed: September 6, 2015
    Date of Patent: May 10, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chieh-Te Chen, Feng-Yi Chang, Kun-Yuan Liao, Chun-Lung Chen, Ching-Pin Hsu, Shang-Yuan Tsai
  • Patent number: 9324620
    Abstract: A metal gate structure includes a substrate including a dense region and an iso region. A first metal gate structure is disposed within the dense region, and a second metal gate structure is disposed within the iso region. The first metal gate structure includes a first trench disposed within the dense region, and a first metal layer disposed within the first trench. The second metal gate structure includes a second trench disposed within the iso region, and a second metal layer disposed within the second trench. The height of the second metal layer is greater than the height of the first metal layer.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: April 26, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shi-Xiong Lin, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, Yu-Cheng Tung
  • Publication number: 20160104645
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a plurality of gate structures on the substrate; forming a first stop layer on the gate structures; forming a second stop layer on the first stop layer; forming a first dielectric layer on the second stop layer; forming a plurality of first openings in the first dielectric layer to expose the second stop layer; forming a plurality of second openings in the first dielectric layer and the second stop layer to expose the first stop layer; and removing part of the second stop layer and part of the first stop layer to expose the gate structures.
    Type: Application
    Filed: November 10, 2014
    Publication date: April 14, 2016
    Inventors: Ching-Wen Hung, Chih-Sen Huang, Yi-Wei Chen, Chien-Ting Lin, Shih-Fang Tzou, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, Chieh-Te Chen
  • Patent number: 9312352
    Abstract: A method for fabricating a field-effect transistor is provided. The method includes: forming a gate dielectric layer and a barrier layer on a substrate in sequence; forming a first silicon layer on and in contact with the barrier layer; performing a thermal treatment to form a silicide layer between the barrier layer and the first silicon layer; and forming a second silicon layer on and in contact with the first silicon layer.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: April 12, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Kun-Yuan Lo, Chih-Wei Yang, Cheng-Guo Chen, Rai-Min Huang, Jian-Cun Ke
  • Publication number: 20160090972
    Abstract: The dual function bicycle air hand pump has functions of bicycle air pump and exerciser. The piston of the dual function bicycle air hand pump has installed a piston which has an off-center threaded canal, which can be closed either by a one-way valve threaded tube and or by a bolt. By simply exchanging the one-way valve threaded tube with a bolt and vice versa, the dual function bicycle air hand pump can be used as a bicycle air pump or an exerciser. When one-way valve threaded tube is used to close the off-center threaded canal of the piston the dual function bicycle air hand pump can be used as an air pump to pump air into a bicycle tire. When a bolt is used to close the off-center threaded canal the dual function bicycle air hand pump can be used as an exerciser for the training of muscles. It is very easy to exchange the one-way valve threaded tube with a bolt and vice versa.
    Type: Application
    Filed: September 30, 2014
    Publication date: March 31, 2016
    Inventor: Kun Yuan Tong