Abstract: A method for forming a 3D memory device is disclosed. A channel structure extending vertically through a dielectric stack including interleaved sacrificial layers and dielectric layers above a substrate is formed. A sacrificial plug above and in contact with the channel structure is formed. A slit opening extending vertically through the dielectric stack is formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A first contact portion is formed in the slit opening. The sacrificial plug is removed after forming the first contact portion to expose the channel structure. A channel local contact above and in contact with the channel structure, and a second contact portion above the first contact portion in the slit opening are simultaneously formed.

Abstract: Embodiments of contact structures of a three-dimensional memory device and fabrication method thereof are disclosed. The three-dimensional memory structure includes a film stack disposed on a substrate, wherein the film stack includes a plurality of conductive and dielectric layer pairs, each conductive and dielectric layer pair having a conductive layer and a first dielectric layer. The three-dimensional memory structure also includes a staircase structure formed in the film stack, wherein the staircase structure includes a plurality of steps, each staircase step having two or more conductive and dielectric layer pairs. The three-dimensional memory structure further includes a plurality of coaxial contact structures formed in a first insulating layer over the staircase structure, wherein each coaxial contact structure includes one or more conductive and insulating ring pairs and a conductive core, each conductive and insulating ring pair having a conductive ring and an insulating ring.

Abstract: Channel structure extending vertically through a dielectric stack including interleaved sacrificial layers and dielectric layers is formed above a substrate. A local dielectric layer is formed on the dielectric stack. A slit opening extending vertically through the local dielectric layer and the dielectric stack is formed. A memory stack including interleaved conductive layers and the dielectric layers is formed by replacing, through the slit opening, the sacrificial layers with the conductive layers. A first source contact portion is formed in the slit opening. A channel local contact opening through the local dielectric layer to expose the channel structure, and a staircase local contact opening through the local dielectric layer to expose one of the conductive layers at a staircase structure on an edge of the memory stack are simultaneously formed.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, a slit structure, and a staircase local contact. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The staircase local contact is above and in contact with one of the conductive layers at a staircase structure on an edge of the memory stack. Upper ends of the channel local contact, the slit structure, and the staircase local contact are flush with one another.

Abstract: Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, a channel local contact, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The channel local contact is above and in contact with the channel structure. The slit structure extends vertically through the memory stack. The slit structure includes a contact including a first contact portion and a second contact portion above the first contact portion and having a different material of the first contact portion. An upper end of the second contact portion of the slit structure is flush with an upper end of the channel local contact.

Abstract: A prosthetic tissue valve and a method of treating the prosthetic tissue valve are provided. The method includes: decreasing a temperature of a chamber carrying the prosthetic tissue valve from a first preset temperature to a second preset temperature in a first cooling rate; decreasing the temperature of the chamber carrying the prosthetic tissue valve from the second preset temperature to a third preset temperature in a second cooling rate; and performing a drying process to the prosthetic tissue valve. The second preset temperature is a critical crystallization temperature and is greater than a crystallization temperature of the prosthetic tissue valve. The third preset temperature is lower than the crystallization temperature of the prosthetic tissue valve, and the second cooling rate is greater than the first cooling rate.

Abstract: A three-dimensional (3D) memory device is disclosed. The 3D memory device comprises an alternating layer stack on a substrate, a plurality of channel holes penetrating the alternating layer stack, a channel structure in each channel hole, and a top selective gate cut structure having a laminated structure and located between two rows of channel structures.

Abstract: A three-dimensional (3D) memory device is disclosed. The 3D memory device comprises an alternating layer stack on a substrate, and a top selective gate cut structure having a laminated structure embedded in an upper portion of the alternating layer stack and extending along a lateral direction. The laminated structure of the top selective gate cut structure comprises a dielectric filling wall and a dummy channel and a dummy functional layer on both sides of the dielectric filling wall.

Abstract: The present application proposes a method and system for improving the multi-angle face recognition accuracy, comprising: performing image collection on the face from N preset collection positions, and obtaining N face comparison images; respectively extracting the background parameters of the N face comparison images, comparing the background parameters with the M preset background parameter intervals, and respectively storing the N face comparison images into the corresponding face comparison image set of the M preset background parameter intervals according to the comparison result; collecting a real-time image of the target face; extracting target background parameters in the real-time image of the target face, comparing the target background parameter with the M preset background parameter intervals, and performing face recognization comparison on the real-time image of the target face corresponding to the target background parameter and the face comparison image in the face comparison image set correspo

Abstract: The present application discloses a method and a system for improving multi-threaded face recognition accuracy. The method includes: acquiring an initial image; performing a face extraction on the initial image in the first CPU to obtain a face image; performing a feature extraction on the face image in the second CPU, and transmitting the facial features extracted by the feature extraction to the first CPU for a face feature comparison; outputting the face feature comparison result, after the second CPU extracts the face features in the face image, and the first CPU performs the face feature comparison according to the face features.

Abstract: A method for forming a 3D memory device is disclosed. The method includes: forming an alternating dielectric stack on a substrate; forming a temporary top selective gate cut in an upper portion of the alternating dielectric stack and extending along a lateral direction; forming a plurality of channel holes penetrating the alternating dielectric stack; removing the temporary top selective gate cut; and forming, simultaneously, a plurality of channel structures in the plurality of channel holes and a top selective gate cut structure.

Abstract: This disclosure relates to adaptive recommendations for user-generated mediasets. A mediaset component provides for users to generate mediasets. A user-generated mediaset can include a user-generated playlist or a user-generated media channel. A monitoring component monitors consumption of media, e.g., by a consumer. A relatedness component determines a set of the user-generated mediasets that are related to the media consumed by the consumer. A recommendation component recommends a subset of the user-generated mediasets based on a set of criteria. A rights management component determines a set of authorizations of the consumer for respective media content associated with the set of user-generated mediasets, and takes at least one action based on the set of authorizations, e.g., updating one of the mediasets based on the set of authorizations.

Abstract: The present invention relates to a formamide compound, a preparation method therefor and an application thereof. The structure of the compound is shown in formula (I), and the definition of each variable in the formula is as provided in the description. The compound is capable of inhibiting the activity of ASK1 kinase. The compound of the present invention may be used in the treatment/prevention of diseases associated with ASK1 kinase, such as inflammatory diseases, metabolic diseases, autoimmune diseases, cardiovascular diseases, neurodegenerative diseases, cancers and other diseases.

Abstract: The invention provides scalable methods for measuring chromatin accessibility and RNA expression in the same single cells by connecting chromatin accessibility and transcriptome. Specifically, the disclosure provides a methods for concurrent characterization of gene expression levels and epigenetic landscape within a single cell comprising determining chromatin accessibility and RNA expression in the cell with a splint oligonucleotide.

Abstract: Understanding the complex effects of genetic perturbations on cellular state and fitness in human pluripotent stem cells (hPSCs) has been challenging using traditional pooled screening techniques which typically rely on unidimensional phenotypic readouts. Here, Applicants use barcoded open reading frame (ORF) overexpression libraries with a coupled single-cell RNA sequencing (scRNA-seq) and fitness screening approach, a technique we call SEUSS (ScalablE fUnctional Screening by Sequencing), to establish a comprehensive assaying platform. Using this system, Applicants perturbed hPSCs with a library of developmentally critical transcription factors (TFs), and assayed the impact of TF overexpression on fitness and transcriptomic cell state across multiple media conditions. Applicants further leveraged the versatility of the ORF library approach to systematically assay mutant gene libraries and also whole gene families.

Abstract: A magnetically driven hopping soft robot based on magnetically programmed temperature-sensitive hydrogels includes first moving bodies and a second moving body. Several first moving bodies are distributed evenly on a bottom portion of the second moving body. The first moving bodies are made of a temperature-responsive hydrogel containing magnetic particles. An alternating magnetic field is applied to the first moving bodies to cause the first moving bodies to deform due to magnetocaloric effect. The first moving bodies have a two-layered structure. A first layer is made of a double-network cross-linked hydrogel and a second layer is made of a magnetic temperature-responsive hydrogel with added magnetic nanoparitcles. An alternating magnetic field is applied to the first moving bodies in a manner that an amount of deformation of the second layer is greater than that of the first layer. The second layer is made of a temperature-responsive hydrogel with added magnetic nanoparticles.

Abstract: Compositions and methods for making a plurality of probes for analyzing a plurality of nucleic acid samples are provided. Compositions and methods for analyzing a plurality of nucleic acid samples to obtain sequence information in each nucleic acid sample are also provided.

Abstract: Presented are methods and compositions for obtaining sequence information from one or more individual cells. The methods are useful for obtaining sequence information for a single nucleotide sequence, and for multiplex generation of sequence information from one or more individual cells.

Abstract: Techniques are described for estimating road friction between a road and tires of a vehicle. A method includes receiving, from a temperature sensor on a vehicle, a temperature value that indicates a temperature of an environment in which a vehicle is operated, determining a first range of friction values that quantify a friction between a road and tires of a vehicle based on a function of the temperature value and an extent of precipitation in a region that indicate a hazardous driving condition, obtaining, from the first range of friction values, a value that quantifies the friction between the road and the tires of the vehicle, where the value is obtained based on a driving related behavior of the vehicle, and causing the vehicle to operate on the road based on the value obtained from the first range of friction values.

Abstract: Described are devices, systems and methods for managing a supplemental brake control system in autonomous vehicles. In some aspects, a supplemental brake management system includes brake control hardware and software that operates with a sensing mechanism for determining the brake operational status and a control mechanism for activating the supplemental brake control in an autonomous vehicle, which can be implemented in addition to the vehicle's primary brake control system.