Abstract: A mobile station determines a data rate in a mobile communication system including a plurality of base stations communicating with the mobile station. The mobile station receives rate control information from the base stations, and receives precedence indicator information from one of the base stations. The precedence indicator information is used for giving precedence to particular rate control information in the rate control information received from the base stations. The mobile station determines a data rate according to the particular rate control information to which precedence is given by the precedence indicator information.

Abstract: Novel materials for electron injection/transportation and emitting layers can greatly improve the stability of an organic electroluminescent display. Electroluminescent displays incorporating these materials produce blue light at low voltage levels. These novel organic materials include compounds in which 1 to 2 imidazole functional groups are introduced in the 2 or 2,6-site of 9,10 substituted anthracene. An organic electroluminescent display with an organic compound layer of these materials has high efficiency, thermal stability, operationally stability and maintains driving voltage before and after operation.

Abstract: A method of providing state information of a mobile station in a mobile communication system which provides a data service between the mobile station and a base station and transmits information on a maximum data rate available for the mobile station and information on the amount of data stored in a buffer of the mobile station in a reverse direction, such that the base station determines a reverse data rate of the mobile station based on channel state information transmitted in the reverse direction. The mobile station determines information on the amount of data stored in its buffer based on information transmitted from the base station. The mobile station quantizes the determined information on the amount of data stored in the buffer, and transmits the quantized information to the base station.

Abstract: A method of providing QoS information and controlling reverse transmit power in a mobile communication system is provided. In the mobile communication system, an MS transmits to a BS, packet data on an R-PDCH for a selected one of a plurality of different services, and packet data control information about the packet data on an R-PDCCH. The packet data control information includes QoS information indicating the type of the selected service.

Abstract: A method of efficiently assigning a plurality of reverse HARQ channels to an MS in a BS in a mobile communication system supporting HARQ is provided. To transmit reverse data to the BS, the MS transmits a reverse data rate request message to the BS, receives from the BS one grant message containing a reverse data rate, and transmits to the BS different packet data at predetermined intervals at the reverse data rate on a packet data channel.

Abstract: The present invention provides a locking-taper abutment which has a crown bonding layer having a good polishing workability and sufficient bonding ability that an artificial crown is firmly supported on the crown bonding layer. The locking-taper abutment includes a post part which is inserted into a well provided in the fixture while enlarging in diameter from bottom to top. The locking-taper abutment further includes a body part. The body part has a seating part extending upwards from the upper portion of the post part exposed to the outside of the well while a diameter of the seating part enlarges from a bottom to a top. The seating part is supported on an inner surface of a gingiva under a gingival crest. The body part further has a vertical part extending upwards from an upper surface of the seating part, with a stopper provided around an outer surface of the upper portion of the seating part.

Abstract: Disclosed is a method and apparatus for transmitting reverse data by a mobile station in a mobile communication system supporting a Hybrid Automatic Repeat reQuest (HARQ). In the mobile station, a controller determines the maximum number of transmissions for a transmission encoder packet if there is an initial transmission subpacket for the encoder packet, and generates an information sequence representing a size of the encoder packet, a number of retransmissions, and a determined maximum number of transmissions. A transmitter encodes the information sequence and transmits the encoded information sequence together with the initial transmission subpacket in the same time period as a time period for transmitting the initial transmission subpacket.

Abstract: The present invention relates to a fabrication method of nitride-based semiconductors and a nitride-based semiconductor fabricated thereby. In the fabrication method of the invention, a self-organizing metal layer is formed on a sapphire substrate. The sapphire substrate having the self-organizing metal layer is heated so that self-organizing metal coalesces into nanoscale clusters to irregularly expose an upper surface of the sapphire substrate. Exposed portions of the sapphire substrate is plasma etched using the self-organized metal clusters as a mask to form a nanoscale uneven structure on the sapphire substrate. A resultant structure is wet etched to remove the self-organized metal clusters. The nanoscale uneven structure formed on the sapphire substrate decreases the stress and resultant dislocation between the sapphire substrate and a nitride-based semiconductor layer as well as increases the quantum efficiency between the same.

Abstract: Output drivers in semiconductor memory devices such as Rambus DRAM prevent degradation of the signal characteristics of a channel bus line in a memory module equipped with the semiconductor memory devices. Each semiconductor memory device includes blocks of memory cells. The data of a memory cell in a block is transmitted to a data input/output line through an output driver for the block. The output driver includes a first transistor connected to a reference voltage (ground) and a second transistor. The first transistor is responsive to the data from the selected block. The second transistor selectively connects the first transistor to the data input/output line in response to a column cycle signal for selecting the block or a read control signal containing calibration information about the characteristics of the data input/output line. Data from the selected block is transmitted to the data input/output line via the first and second transistors when the second transistor responds to the column cycle signal.

Abstract: In an apparatus for controlling reply signal transmission in a reply signal transmitter that generates and transmits a reply signal according to an error check in packet data received through a radio channel in a mobile communication system, an error detection part generates a reply signal corresponding to the error check from the packet data received through the radio channel. A spreading part spreads the reply signal to output the spread reply signal. A transmission power control part carries out a power control operation for the spread reply signal with a power value that differs according to a packet data transmission rate of a packet data channel. A transmission part transmits the reply signal outputted by the transmission power control part through a radio channel.

Abstract: A method of fabricating a semiconductor package includes: forming a circuit pattern on a frame; attaching a semiconductor chip onto the circuit pattern; connecting the semiconductor chip and the circuit pattern electrically; forming a molding wrapping the semiconductor chip and the circuit pattern; removing the frame; forming a photoresist film having a through hole on the circuit pattern, the through hole exposing a portion of the circuit pattern; and forming a solder ball on the photoresist film, the solder ball being connected to the portion of the circuit pattern through the through hole.

Abstract: The disclosure relates to a fumagillol compound which can be usefully used not only as an angiogenesis inhibiting agent showing a superior angeogenesis inhibitory effect with less toxicity, but also as a cancer metastasis inhibitor and a therapeutic agent against cancer and other various inflammatory diseases such as rheumatic disease, psoriasis, etc., and diabetic retinopathy related to angeogeneois, and also a method for preparing the same.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: Novel materials for electron injection/transportation and emitting layers can greatly improve the stability of an organic electroluminescent display. Electroluminescent displays incorporating these materials produce blue light at low voltage levels. These novel organic materials include compounds in which 1 to 2 imidazole functional groups are introduced in the 2 or 2,6-site of 9,10 substituted anthracene. An organic electroluminescent display with an organic compound layer of these materials has high efficiency, thermal stability, operationally stability and maintains driving voltage before and after operation.

Abstract: In the method for forming a capacitor of a nonvolatile semiconductor memory device, a TaON glue layer is formed over a semiconductor substrate, and a lower electrode is formed on the TaON glue layer. A ferroelectric film is then formed on the lower electrode, and an upper electrode is formed on the ferroelectric film.

Abstract: A capacitor of a semiconductor device and the method of manufacture thereof, includes the steps of providing a semiconductor substrate; forming a lower electrode on the semiconductor substrate; forming a nitride layer on the upper part of the lower electrode; forming an oxide tin layer SnO2 on the upper part of the nitride layer; forming an amorphous TaON layer on the upper part of the oxide tin layer; diffusing oxygen and tin in the oxide tin layer and amorphous TaON layer by thermal treatment, thereby changing the layers into Ta—C—Sn layer; and forming an upper electrode on the upper part of the Ta—O—Sn layer.

Abstract: The present invention discloses a method for manufacturing a capacitor of a semiconductor memory device. The disclosed present invention comprises steps of forming a lower electrode made of a conductive polysilicon film or a conductive amorphous silicon film on a semiconductor substrate; forming a nitride film over the lower electrode; depositing an amorphous TaON thin film over the nitride film; subjecting the amorphous TaON thin film to a thermal treatment to effect a crystallization thereof; and forming a laminated structure composed of a TiON film and a doped silicon film for an upper electrode on the crystallized TaON thin film.

Abstract: A chip information output circuit including a fuse box, capable of reducing a layout area without affecting input capacitance, is provided. The chip information output circuit includes a plurality of fuse blocks for generating different outputs according to whether a fuse is cut and a pipeline circuit for receiving a plurality of signals, which are output in parallel from the respective fuse blocks, and serially outputting the plurality of signals. Each of the fuse blocks includes a plurality of fuse boxes for generating output signals, the levels of which are either a high or low logic level according to whether the fuses included therein are cut, wherein the respective fuse boxes are enabled in response to the respective control signals and the output lines of the fuse boxes are wired by an OR operation. The pipeline circuit includes a plurality of serially connected latch units for latching signals output from the fuse blocks and outputting the latched signals.

Abstract: A lead frame for a semiconductor package and a method for manufacturing the lead frame. In the manufacture of the lead frame, a protective layer is formed with nickel (Ni) or Ni alloy on a metal substrate, an intermediate layer is then formed with palladium (Pd) or Pd alloy on the protective layer. Then, Pd and gold (Au) are alternately plated on the surface of the intermediate layer to form an outermost layer including both Pd and Au particles thereon.