Abstract: A fin-type field effect transistor comprising a substrate, at least one gate structure, first spacers, second spacers and source and drain regions is described. The substrate has fins and insulators disposed between the fins. The at least one gate structure is disposed over the fins and disposed on the insulators. The first spacers are disposed on opposite sidewalls of the at least one gate structure. The source and drain regions are disposed on two opposite sides of the at least one gate structure and beside the first spacers. The second spacers are disposed on the two opposite sides of the at least one gate structure and beside the first spacers. The source and drain regions are sandwiched between the opposite second spacers.

Abstract: An o-aminoheteroaryl alkynyl-containing compound has a structure represented by formula (I), and the compound of formula (I) has advantages of a high FGFR and RET double target inhibitory activity and a relatively low KDR activity, and the compound of formula (I) exhibits a strong inhibitory activity in a human lung cancer cell line NCI-H1581 and a gastric cancer cell line SNU16 as well as an RET-dependent sensitive cell line BaF3-CCDC6-Ret and a mutant thereof. Pharmacokinetic data shows that the o-aminoheteroaryl alkynyl-containing compound has druggability, and exhibits significant relevant inhibition of the growth of related tumors in a long-term animal model of drug efficacy and results in favorable animal condition at effective doses.

Abstract: The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) device. The RRAM device includes a bottom electrode that is disposed over a lower interconnect layer surrounded by a lower inter-level dielectric (ILD) layer. A data storage structure is arranged over the bottom electrode and a multi-layer top electrode is disposed over the data storage structure. The multi-layer top electrode includes conductive top electrode layers separated by an oxygen barrier structure that is configured to mitigate movement of oxygen between the conductive top electrode layers. A sidewall spacer is disposed directly over the bottom electrode and has a sidewall that covers outermost sidewalls of the conductive top electrode layers and the oxygen barrier structure.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A short pulse generating circuit including a pulse generating circuit, an actuation control circuit and a delay control circuit is provided. The pulse generating circuit is electrically coupled to a switch, which is coupled to a power. When the power is turned on, the power causes the pulse generating circuit to generate a long pulse. The actuation control circuit is electrically coupled to the power and the pulse generating circuit. When the power is turned on, the actuation control circuit controls a voltage level of each output of the pulse generating circuit to a fixed value. The delay control circuit is electrically coupled to the pulse generating circuit. When the switch is turned on, the power controls the delay control circuit to change the voltage level of each output of the pulse generating circuit to generate a short pulse output.

Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: Various embodiments provide a thickness sensor and method for measuring a thickness of discrete conductive features, such as conductive lines and plugs. In one embodiment, the thickness sensor generates an Eddy current in a plurality of discrete conductive features, and measures the generated Eddy current generated in the discrete conductive features. The thickness sensor has a small sensor spot size, and amplifies peaks and valleys of the measured Eddy current. The thickness sensor determines a thickness of the discrete conductive features based on a difference between a minimum amplitude value and a maximum amplitude value of the measured Eddy current.

Abstract: A method of fabricating a semiconductor device includes following steps. A trench is formed in a substrate. A barrier layer and an epitaxy layer are formed in sequence in the trench. The barrier layer has a first dopant. A source/drain recess cavity is formed by etching at least the epitaxial layer. A source/drain region is formed in the source/drain recess cavity. The source/drain region has a second dopant.

Abstract: The present disclosure relates to a resistive random access memory (RRAM) device. In some embodiments, the RRAM device has a bottom electrode disposed over a lower interconnect layer surrounded by an inter-level dielectric (ILD) layer. A dielectric data storage layer having a variable resistance is located above the bottom electrode, and a multi-layer top electrode is disposed over the dielectric data storage layer. The multi-layer top electrode has conductive top electrode layers separated by an oxygen barrier structure configured to mitigate movement of oxygen within the multi-layer top electrode. By including an oxygen barrier structure within the top electrode, the reliability of the RRAM device is improved since oxygen is kept close to the dielectric data storage layer.

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

Abstract: Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process.

Abstract: Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process.

Abstract: A loudspeaker structure with a push-latch coupling design includes an enclosure unit, a speaker driver, a mesh cover, and a push latch device. The push latch device includes a female latch portion and a male latch portion. The male latch portion is fixed on the inner side, and adjacent to the periphery, of the mesh cover and has a latching head. The female latch portion is fixed on, and adjacent to a through hole in, the front-panel frame of the enclosure unit and includes a locking mechanism. Once the latching head is inserted in the female latch portion, the locking mechanism enters a locking state, in which the mesh cover is locked to the enclosure unit and covers the speaker driver. A gentle press on the mesh cover can change the locking state into a release state to enable automatic separation between the mesh cover and the enclosure unit.

Abstract: The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.

Abstract: A short pulse generating circuit including a pulse generating circuit, an actuation control circuit and a delay control circuit is provided. The pulse generating circuit is electrically coupled to a switch, which is coupled to a power. When the power is turned on, the power causes the pulse generating circuit to generate a long pulse. The actuation control circuit is electrically coupled to the power and the pulse generating circuit. When the power is turned on, the actuation control circuit controls a voltage level of each output of the pulse generating circuit to a fixed value. The delay control circuit is electrically coupled to the pulse generating circuit. When the switch is turned on, the power controls the delay control circuit to change the voltage level of each output of the pulse generating circuit to generate a short pulse output.

Abstract: A shooting device including a camera lens and a controller is provided. The camera lens is configured to shoot a picture. The controller, electronically coupled to the camera lens, divides the picture into a plurality of initial blocks each corresponding to an initial brightness value, selects at least one selection block from the initial blocks, and calculates an average brightness value according to the initial brightness value corresponding to the at least one selection block.

Abstract: A preparation and application of Syzygium zeylanicum L. extract, which is produced by solvent extraction. The extract can reduce ?-glucosidases and ?-amylases after administration in vivo and does not cause side effects, further can control the abnormal performance of blood sugar in diabetic patients after meals.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Abstract: A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.

Abstract: Embodiments disclosed herein relate generally to forming an ultra-shallow junction having high dopant concentration and low contact resistance in a p-type source/drain region. In an embodiment, a method includes forming a source/drain region in an active area on a substrate, the source/drain region comprising germanium, performing an ion implantation process using gallium (Ga) to form an amorphous region in the source/drain region, performing an ion implantation process using a dopant into the amorphous region, and subjecting the amorphous region to a thermal process.