Patents by Inventor Liang Chu

Liang Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD AND APPARATUS FOR FORMING A SEMICONDUCTOR GATE
    Publication number: 20150279951
    Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.
    Type: Application
    Filed: June 12, 2015
    Publication date: October 1, 2015
    Inventors: Chen-Liang Chu, Fei-Yun Chen, Chih-Wen Yao
  • High Voltage Drain-Extended MOSFET Having Extra Drain-OD Addition
    Publication number: 20150249144
    Abstract: An integrated circuit and a method of forming is provided. The method includes forming a first well in a substrate, the first well having a first conductivity type, and forming a first source/drain region in the first well, the first source/drain region having a second conductivity type. A resistance protection ring is formed on the substrate.
    Type: Application
    Filed: May 18, 2015
    Publication date: September 3, 2015
    Inventors: Yi-Sheng Chen, Chen-Liang Chu, Shih-Kuang Hsiao, Fei-Yuh Chen, Kong-Beng Thei
  • Transistor having an active region with wing structure
    Patent number: 9099556
    Abstract: A semiconductor device includes an active region having a channel region and at least a wing region adjoining the channel region under the gate dielectric layer. The at least one wing region may be two symmetrical wing regions across the channel region.
    Type: Grant
    Filed: August 19, 2011
    Date of Patent: August 4, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Liang Chu, Fei-Yuh Chen, Yi-Sheng Chen, Shih-Kuang Hsiao, Chun Lin Tsai, Kong-Beng Thei
  • RECONSTITUTED APOLIPOPROTEIN B LIPOPARTICLE, A PREPARATION METHOD AND USES THEREOF
    Publication number: 20150182470
    Abstract: The present invention provides a method for preparing a reconstituted apolipoprotein B lipoparticle and the method comprises steps of (a) dissolving an apolipoprotein B and a lipid in a first buffer containing 2 M to 8 M urea and 1 wt % to 15 wt % amphiphilic compounds to form a mixture; and (b) dialyzing the mixture against a second buffer containing 0 M to 2M urea and 0 wt % to 0.5 wt % amphiphilic compounds for 1 to several times for lowering concentrations of the urea and the amphiphilic compounds in the mixture. The present invention further provides an apolipoprotein B lipoparticle and a use for the production of an apolipoprotein B lipoparticle used for delivering a hydrophobic substance.
    Type: Application
    Filed: July 4, 2014
    Publication date: July 2, 2015
    Inventors: Chia-Ching CHANG, Gong-Shen CHEN, Tsai-Mu CHENG, Hsueh-Liang CHU
  • Method and apparatus for forming a semiconductor gate
    Patent number: 9070663
    Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: June 30, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Liang Chu, Fei-Yuh Chen, Chih-Wen Yao
  • PANTS FOR PERSON WITH LIMITED MOBILITY
    Publication number: 20150157063
    Abstract: A pair of pants for a person with limited mobility, which is convenient for the person sitting in a urinal chair to urinate, includes a pants body and a zipper. The pants body has a waistband, two pants legs, a crotch and an opening defined between the waistband and the crotch of the pants body. The zipper has two rows of teeth at two opposite edges of the opening and a zipper head moving along the two rows of the teeth. The zipper head is pulled to move upwardly from the crotch to the waistband of the pants body to open the zipper. Therefore, when the zipper head is positioned at the waistband of the pants body, the zipper is fully opened; in contrast, when the zipper head is positioned at the crotch of the pants body, the zipper is fully closed.
    Type: Application
    Filed: December 10, 2013
    Publication date: June 11, 2015
    Inventors: Hsiao-Chang Yao, Liang-Chu Yao, Chih-Min Yao, Zai-Fu Yao, Jen-Huo Yao
  • High voltage drain-extended MOSFET having extra drain-OD addition
    Patent number: 9035380
    Abstract: An integrated circuit includes a high-voltage well having a first doping type, a first doped region and a second doped region embedded in the high-voltage well, the first and second doped regions having a second doping type and spaced apart by a channel in the high-voltage well, source/drain regions formed in the first doped region and in the second doped region, each of the source/drain regions having the second doping type and more heavily doped than the first and second doped regions, first isolation regions spaced apart from each of the source/drain regions, and resistance protection oxide forming a ring surrounding each of the source/drain regions.
    Type: Grant
    Filed: November 27, 2012
    Date of Patent: May 19, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Sheng Chen, Chen-Liang Chu, Shih-Kuang Hsiao, Fei-Yun Chen, Kong-Beng Thei
  • Chair with Urinal Device
    Publication number: 20140352050
    Abstract: A urinal chair includes a chair body and a urinal device. The chair body has a seat supporting frame defining an open seat area. The urinal device includes a top open drain pan, a cushion, a container and a cleaning device. The drain pan is supportably mounted upon the seat supporting frame of the chair body to fit in the open seat area of the chair body. The drain pan is slanted to drain toward a drainage aperture therein. The cushion is fit over the drain pan and defines a hole to permit drainage through the cushion to the drain pan. The container is disposed under the drain pan to collect liquid from the drain pan. Moreover, the cleaning device includes a cistern and a spout connected to the cistern. The spout is directed toward the drain pan for cleaning the drain pan with water stored in the cistern.
    Type: Application
    Filed: May 28, 2013
    Publication date: December 4, 2014
    Inventors: Jen-Huo Yao, Liang-Chu Yao, Hsiao-Chang Yao, Zai-Fu Yao, Chih-Min Yao
  • Pharmaceutical compositions comprising GPR119 agonists which act as peptide YY (PYY) secretagogues
    Patent number: 8883714
    Abstract: The present invention relates to methods of using GPR119 receptor to identify peptide YY (PYY) secretagogues and compounds useful in the treatment of conditions modulated by PYY, such as conditions modulated by stimulation of NPY Y2 receptor (Y2R). Agonists of GPR119 receptor are useful as therapeutic agents for treating or preventing a condition modulated by PYY, such as a condition modulated by stimulation of Y2R. Conditions modulated by PYY such as may be a condition modulated by stimulation of Y2R include bone-related conditions, metabolic disorders, angiogenesis-related conditions, ischemia-related conditions, convulsive disorders, malabsorptive disorders, cancers, and inflammatory disorders.
    Type: Grant
    Filed: February 1, 2013
    Date of Patent: November 11, 2014
    Assignee: Arena Pharmaceuticals, Inc.
    Inventors: Zhi-Liang Chu, James N. Leonard, Robert M. Jones
  • SEMICONDUCTOR ARRANGEMENT AND FORMATION THEREOF
    Publication number: 20140273376
    Abstract: A semiconductor arrangement and method of formation are provided. A method of semiconductor formation includes using a single photoresist to mask off an area where low voltage devices are to be formed as well as gate structures of high voltage devices while performing high energy implants for the high voltage devices. Another method of semiconductor fabrication includes performing high energy implants for high voltage devices through a patterned photoresist where the photoresist is patterned prior to forming gate structures for high voltage devices and prior to forming gate structures for low voltage devices. After the high energy implants are performed, subsequent processing is performed to form high voltage devices and low voltage devices. High voltage device and low voltage devices are thus formed in a CMOS process without need for additional masks.
    Type: Application
    Filed: February 20, 2014
    Publication date: September 18, 2014
    Inventors: Alexander Kalnitsky, Kong-Beng Thei, Chien-Chih Chou, Chen-Liang Chu, Hsiao-Chin Tuan
  • Endogenous and Non-Endogenous Versions of Human G Protein-Coupled Receptors
    Publication number: 20140162358
    Abstract: The invention disclosed in this patent document relates to transmembrane receptors, more particularly to a human G protein-coupled receptor for which the endogenous ligand is unknown, and to mutated (non-endogenous) versions of the human. GPCRs for evidence of constitutive activity.
    Type: Application
    Filed: June 27, 2013
    Publication date: June 12, 2014
    Inventors: RUOPING CHEN, ZHI LIANG CHU, HUONG T. DANG, KEVIN P. LOWITZ, CAMERON PRIDE
  • High Voltage Drain-Extended MOSFET Having Extra Drain-OD Addition
    Publication number: 20140145261
    Abstract: An integrated circuit includes a high-voltage well having a first doping type, a first doped region and a second doped region embedded in the high-voltage well, the first and second doped regions having a second doping type and spaced apart by a channel in the high-voltage well, source/drain regions formed in the first doped region and in the second doped region, each of the source/drain regions having the second doping type and more heavily doped than the first and second doped regions, first isolation regions spaced apart from each of the source/drain regions, and resistance protection oxide forming a ring surrounding each of the source/drain regions.
    Type: Application
    Filed: November 27, 2012
    Publication date: May 29, 2014
    Applicant: Taiwan Semiconductor Manufacturing Company
    Inventors: Yi-Sheng Chen, Chen-Liang Chu, Shih-Kuang Hsiao, Fei-Yun Chen, Kong-Beng Thei
  • Power transistor with high voltage counter implant
    Patent number: 8673712
    Abstract: Presented herein is a field effect transistor device, optionally a lateral power transistor, and a method for forming the same, comprising providing a substrate, creating a doped buried layer, and creating a primary well in the substrate on the buried layer. A drift drain may be created in the primary well and a counter implant region implanted in the primary well and between the drift drain and the buried layer. The primary well may comprise a first and second implant region with the second implant region at a depth less than the first. The counter implant may be at a depth between the first and second implant regions. The primary well and counter implant region may comprise dopants of the same conductivity type, or both p+-type dopants. A gate may be formed over a portion of a drift drain.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: March 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Kuang Hsiao, Chen-Liang Chu, Yi-Sheng Chen, Fei-Yuh Chen, Kong-Beng Thei
  • Power Transistor with High Voltage Counter Implant
    Publication number: 20140021539
    Abstract: Presented herein is a field effect transistor device, optionally a lateral power transistor, and a method for forming the same, comprising providing a substrate, creating a doped buried layer, and creating a primary well in the substrate on the buried layer. A drift drain may be created in the primary well and a counter implant region implanted in the primary well and between the drift drain and the buried layer. The primary well may comprise a first and second implant region with the second implant region at a depth less than the first. The counter implant may be at a depth between the first and second implant regions. The primary well and counter implant region may comprise dopants of the same conductivity type, or both p+-type dopants. A gate may be formed over a portion of a drift drain.
    Type: Application
    Filed: July 20, 2012
    Publication date: January 23, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Kuang Hsiao, Chen-Liang Chu, Yi-Sheng Chen, Fei-Yun Chen, Kong-Beng Thei
  • Method for augmenting the immunogenicity of an antigen
    Patent number: 8628785
    Abstract: The present invention relates to a method for augmenting the immunogenicity of an antigen in a mammal, comprising immunizing the mammal with a composition comprising the antigen, and an adjuvant in an amount of effective to augment the immunogenicity of said antigen, wherein the adjuvant comprises a Ling-Zhi-8 (LZ-8) protein.
    Type: Grant
    Filed: June 17, 2011
    Date of Patent: January 14, 2014
    Assignee: Yeastern Biotech Co., Ltd
    Inventors: Ching-Liang Chu, Tzu-Chih Chen
  • Systems, apparatus, and methods for providing and detecting information regarding a person, location, or object
    Patent number: 8624722
    Abstract: An apparatus for providing and detecting information regarding a person, location, or object includes a power supply, a helicoil dipole antenna, a transmitter, a receiver configured to receive signals from remote transmitters at a designated frequency, a computer processor, and a memory device configured to store an identifier associated with the apparatus. Logic instructions embedded on the memory device are configured to compare an identifier decoded from received signals to the identifier associated with the apparatus. When the identifier decoded matches the identifier associated with the apparatus, the instructions decode a return frequency from the signal, and generate return signals. The return signals include the identifier associated with the apparatus, the transmitter is activated only when the transmitter transmits the return signals at the return frequency.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: January 7, 2014
    Assignee: Lockheed Martin Corporation
    Inventors: Julie L. Miller, Liang Chu
  • METHOD FOR AUGMENTING THE IMMUNOGENICITY OF AN ANTIGEN
    Publication number: 20130344105
    Abstract: The present invention relates to a method for augmenting the immunogenicity of an antigen in a mammal, comprising immunizing the mammal with a composition comprising the antigen, and an adjuvant in an amount of effective to augment the immunogenicity of said antigen, wherein the adjuvant comprises a Ling-Zhi-8 (LZ-8) protein.
    Type: Application
    Filed: August 12, 2013
    Publication date: December 26, 2013
    Inventors: Ching-Liang Chu, Tzu-Chih Chen
  • Method and Apparatus for Forming a Semiconductor Gate
    Publication number: 20130337644
    Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.
    Type: Application
    Filed: August 16, 2013
    Publication date: December 19, 2013
    Inventors: Chen-Liang Chu, Fei-Yuh Chen, Chih-Wen Yao
  • Endogenous and Non-Endogenous Versions of Human G Protein-Coupled Receptors
    Publication number: 20130309766
    Abstract: The invention disclosed in this patent document relates to transmembrane receptors, more particularly to a human G protein-coupled receptor for which the endogenous ligand is unknown, and to mutated (non-endogenous) versions of the human GPCRs for evidence of constitutive activity.
    Type: Application
    Filed: June 27, 2013
    Publication date: November 21, 2013
    Applicant: Arena Pharmaceuticals, Inc.
    Inventors: RUOPING CHEN, ZHI LIANG CHU, HUONG T. DANG, KEVIN P. LOWITZ, CAMERON PRIDE
  • Methods of using GPR119 receptor to identify compounds which stimulate glucose-dependent insulinotropic peptide secretion
    Patent number: 8580526
    Abstract: The present invention relates to methods of using GPR119 receptor to identify compounds useful for increasing bone mass in an individual. Agonists of GPR119 receptor are useful as therapeutic agents for treating or preventing a condition characterized by low bone mass, such as osteoporosis, and for increasing bone mass in an individual. Agonists of GPR119 receptor promote bone formation in an individual.
    Type: Grant
    Filed: August 1, 2011
    Date of Patent: November 12, 2013
    Assignee: Arena Pharmaceuticals, Inc.
    Inventors: Zhi-Liang Chu, James N. Leonard