Abstract: The present invention discloses a DAC method having signal calibration mechanism. A first conversion circuit generates a first analog signal according to an input digital signal. A second conversion circuit generates a second analog signal according to the input digital signal and a pseudo-noise digital signal. An echo transmission circuit processes a signal on an echo path to generate an echo signal. A first and a second calibration circuits generate a first and a second calibration signals. A calibration parameter calculation circuit performs calculation according to a difference between the echo signal and a sum of the first and the second calibration signals and related path information to generate a first and a second offsets. The first and the second calibration circuits converge first and second response coefficients and update a first and a second codeword offset tables according to the first and the second offsets.

Abstract: A method for manufacturing a memory device includes forming a via trench in a substrate and forming a via in the via trench. A lower portion of the via includes a first metal and an upper portion of the via includes a second metal that is different from the first metal. The method further includes forming a magnetic tunneling junction over the via and forming a top electrode over the magnetic tunneling junction.

Abstract: The present invention discloses a digital-to-analog conversion apparatus having current source measuring mechanism. A digital-to-analog conversion circuit in turn sets one of thermo-controlled current sources as an initial current source to operate according to two specific input codewords included in an input digital signal to generate an output analog signal. The values of the output analog signal corresponding to the two specific input codewords have opposite signs and the same absolute value. An echo transmission circuit processes the output analog signal to generate an echo signal. An echo-canceling circuit processes the input digital signal according to echo-canceling coefficients to generate an echo-canceling signal and receives an error signal to converge the echo-canceling coefficients.

Abstract: The present invention discloses a digital-to-analog conversion apparatus having signal calibration mechanism is provided. A digital-to-analog conversion circuit includes conversion circuits to generate an output analog signal and echo-canceling analog signals. An echo transmission circuit processes an echo-transmitting path to generate an echo signal. An echo calibration circuit generates an output calibration signal and echo-canceling calibration signals according to an input digital circuit through calibration circuits corresponding to the conversion circuits. A calibration parameter calculating circuit generates a plurality of offsets according to an error signal of the echo signal relative to the calibration signals and path information related to the echo calibration circuit.

Abstract: A method for forming a semiconductor memory structure includes forming an MTJ stack over a substrate. The method also includes etching the MTJ stack to form an MTJ device. The method also includes depositing a metal layer over a top surface and sidewalls of the MTJ device. The method also includes oxidizing the metal layer to form an oxidized metal layer. The method also includes depositing a cap layer over the oxidized metal layer. The method also includes oxidizing the cap layer to form an oxidized cap layer. The method also includes removing an un-oxidized portion of the cap layer.

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, an interconnect structure, a memory cell and a conductive via. The semiconductor substrate has a first side and a second side opposite to the first side. The gate structure is disposed over the first side of the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate aside the gate structure. The interconnect structure is disposed over the first side of the semiconductor substrate and electrically connected to the source region. The memory cell is disposed over the second side of the semiconductor substrate and electrically connected to the drain region. The conductive via is disposed in the semiconductor substrate between the drain region and the memory cell and electrically connects the drain region and the memory cell.

Abstract: A wafer handling apparatus includes at least one load port, an image capturing device and a processor. The load port is configured to receive a wafer carrier. The image capturing device is configured to capture an image of the wafer carrier received in the load port before one or more wafers are inserted into the wafer carrier. The processor is communicably connected to the image capturing device and is configured to determine whether the wafer carrier is in a condition that is unsafe for wafer placement based on the image captured by the image capturing device.

Abstract: This paper presents a practical method for measuring the impact of multiple marketing events on sales, including marketing events that are not traditionally trackable. The technique infers which of several competing media events are likely to have caused a given conversion. The method is tested using hold-out sets, and also a live media experiment for determining whether the method can accurately predict television-generated web conversions.

Abstract: This paper presents a practical method for measuring the impact of multiple marketing events on sales, including marketing events that are not traditionally trackable. The technique infers which of several competing media events are likely to have caused a given conversion. The method is tested using hold-out sets, and also a live media experiment for determining whether the method can accurately predict television-generated web conversions.

Abstract: A method includes: generating a first signal according to a digital signal; filtering the first signal according to first filter coefficients of first filter to generate a second signal; adding a first reference signal with the second signal to generate a third signal; performing digital-to-analog conversion according to the first and third signals to generate and output an echo signal; performing analog-to-digital conversion according to the echo signal to generate a fourth signal; generating a fifth signal according to the digital signal and the fourth signal; and updating the first filter coefficients according to the fifth signal.

Abstract: Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a dielectric layer including a top surface, a plurality of magneto-resistive memory cells disposed in the dielectric layer and including top electrodes, a first etch stop layer disposed over the dielectric layer, a common electrode extending through the first etch stop layer to be in direct contact with the top electrodes, and a second etch slop layer disposed on the first etch stop layer and the common electrode. Top surfaces of the top electrodes are coplanar with the top surface of the dielectric layer.

Abstract: An Ethernet physical-layer circuit corresponding to a first port is connected to a first link partner device through the first port and a first Ethernet cable. The Ethernet physical-layer circuit and other physical-layer circuits all employ an output oscillation signal of a crystal oscillator to respectively generate clock waveforms, and they are configured in a master mode when the crosstalk noise is converged and compensated.

Abstract: A memory system for maintaining data consistency and an operation method thereof are provided. The operation method includes: receiving a first data in a first cache of a first memory from a processor; reading the first data from the first cache and writing the first data as a redo log into a log buffer of the first memory; writing the redo log from the log buffer into a memory controller of the processor; performing an in-memory copy in a second memory to copy a second data as an undo log, wherein the second data is an old version of the first data; and writing the redo log from the memory controller into the second memory for covering the second data by the redo log as a third data, wherein the redo log, the third data and the first data are the same.

Abstract: A semiconductor memory structure includes bottom electrodes formed over a substrate. The structure also includes first magnetic tunneling junction (MTJ) elements formed over the bottom electrodes in a first region and a second region of the substrate. The structure also includes second MTJ elements formed over the first MTJ elements in the first region and the second region. The structure also includes top electrodes formed over the second MTJ elements. The first MTJ elements in the first region are narrower than the second MTJ elements in the first region, and the second MTJ elements in the second region are narrower than the first MTJ elements in the second region.

Abstract: The present invention discloses a digital-to-analog conversion apparatus having signal calibration mechanism. A DAC circuit includes conversion circuits to generate an output analog signal and an echo-canceling analog signal. An echo transmission circuit performs signal processing on an echo path to generate an echo signal. An echo calibration circuit includes odd and even calibration circuits to perform mapping according to offset tables and perform processing according to response coefficients on odd and even input parts of an input digital signal to generate odd and even calibration parts of an echo-canceling calibration signal. A calibration parameter calculation circuit generates offsets according to an error signal between the echo signal and the echo-canceling calibration signal and path information related to the echo calibration circuit.

Abstract: A wafer handling apparatus includes at least one load port, an image capturing device and a processor. The load port is configured to receive a wafer carrier. The image capturing device is configured to capture an image of the wafer carrier received in the load port before one or more wafers are inserted into the wafer carrier. The processor is communicably connected to the image capturing device and is configured to determine whether the wafer carrier is in a condition that is unsafe for wafer placement based on the image captured by the image capturing device.

Abstract: An AI-assisted automatic labeling system and a method thereof are disclosed. The method comprises steps: selecting images from microscopic images as candidate images, using a pre-labeling module to automatically label cells in the candidate images, and dividing the labeled images into training data and verification data; using a training module and the training data to train a basic model; using a verification module to verify and modify the basic model, wherein the verification module respectively verifies at least one cell area and at least one background area of the verification data to converge the basic model and form an automatic labeling model; using the automatic labeling model to automatically label cells in redundant images of the microscopic images. The basic model trained by the present invention can use few labeled images to perform regressive training and verification and then automatically labels the redundant images accurately and efficiently.

Abstract: Provided is a waterproof projector. The projector comprises an upper cover, an upper housing, a cavity shell and a lower cover, the upper cover is arranged at the upper end of the cavity shell, a first sealing structure is arranged between the upper cover and the upper end of the cavity shell, the lower cover is arranged at the lower end of the cavity shell, a second sealing structure is arranged between the lower cover and the lower end of the cavity shell, a main body structure is arranged in the cavity shell, an access hole is formed in the cavity shell, an access shell is arranged at the access hole, a third sealing structure is arranged between the access shell and the cavity shell, a heat dissipation structure is arranged on the upper cover, the upper housing is arranged on the outer side of the heat dissipation structure.

Abstract: Provided herein are opioid receptor modulators and pharmaceutical compositions comprising said compounds.

Abstract: A memory device and a computing method thereof are provided in the present disclosure. The computing method includes the following steps. A plurality of input-values of a model computation are respectively received through a plurality of first-word-lines of a memory array. Inverted logic values of the input-values are respectively received through a plurality of second-word-lines. The input-values are respectively received through a plurality of first-bit-lines. The inverted logic values are respectively received through a plurality of second-bit-lines. Logic XNOR operation is performed according to each of the input-values and each of the inverted values to obtain a first computation result, and multiplied with one of self-coefficients or one of mutual coefficients of the model computation to obtain a plurality of output-values. The output-values are outputted through a plurality of common-source-lines.