Abstract: This disclosure is directed to methods, systems, and devices related to wireless communication. A method of wireless communication, comprising: transmitting, by a wireless communication device, to a network device, a sidelink coexistence assistance information; receiving, by a wireless communication device, from the network device, a configuration message according to the sidelink coexistence assistance information; wherein the wireless communication device is in Radio Resource Control (RRC) connected state.

Abstract: A greeting card that selectively opens and closes. The greeting card assembly simulates a firework display in the background of a foreground message when opened. The greeting card assembly has a card section that contains an internal compartment covered by a top panel. A plurality of cutouts are formed through the top panel that are shaped as firework starbursts. LEDs are positioned within the internal compartment for selectively backlighting the cutouts. A light diffusing element is interposed between the cutouts and the LEDs. A speaker is positioned within the internal compartment for playing a digital soundtrack of exploding fireworks. At least one foreground panel is provided that is positioned a distance from the top panel when the greeting card assembly is opened. When viewed, the foreground panels stand in front of a card section that is playing a soundtrack and flashing lights behind starburst cutouts to simulate background fireworks.

Abstract: A surgical stapling device includes a staple reload and a handle assembly that supports a drive rack, a motor assembly, a gear assembly, a reload select mechanism, and a safety toggle mechanism. The gear assembly is adapted to facilitate uncoupling of the motor assembly from the drive rack to allow manual movement of the drive rack. The reload select mechanism allows the length of a stroke of the drive rack to be selectively adjusted to allow the stapling device to accommodate different length staple reloads. The safety toggle mechanism is provided to move the stapling device from a non-firing state to a firing state to allow for firing of the stapling device.

Abstract: A neutron capture therapy system is provided, including a neutron generating device and a beam shaping assembly. The neutron capture therapy system further includes a concrete wall forming a space for accommodating the neutron generating device and the beam shaping assembly and shielding radiations generated by the neutron generating device and the beam shaping assembly. A support module is disposed in the concrete wall, the support module is capable of supporting the beam shaping assembly and is used to adjust the position of the beam shaping assembly, and the support module includes concrete and a reinforcing portion at least partially disposed in the concrete. The neutron capture therapy system designs a locally adjustable support for the beam shaping assembly, so that the beam shaping assembly can meet the precision requirement, improve the beam quality, and meet an assembly tolerance of the target.

Abstract: A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate structure disposed over and interleaved with the stack of semiconductor layers, the metal gate structure including a gate electrode disposed over a gate dielectric layer, a first isolation structure disposed adjacent to a first sidewall of the stack of semiconductor layers, where the gate dielectric layer fills space between the first isolation structure and the first sidewall of the stack of semiconductor layers, and a second isolation structure disposed adjacent to a second sidewall of the stack of semiconductor layers, where the gate electrode fills the space between the second isolation structure and the second sidewall of the stack of semiconductor layers.

Abstract: Semiconductor devices and method of forming the same are provided. In one embodiment, a semiconductor device includes a first transistor and a second transistor. The first transistor includes two first source/drain features and a first number of nanostructures that are stacked vertically one over another and extend lengthwise between the two first source/drain features. The second transistor includes two second source/drain features and a second number of nanostructures that are stacked vertically one over another and extend lengthwise between the two second source/drain features.

Abstract: A memory cell includes first and second active regions and first and second gate structures. The first gate structure engages the first and second active regions in forming a first pull-down transistor and a first pull-up transistor, respectively, and the second gate structure engages the first and second active regions in forming a second pull-down transistor and a second pull-up transistor, respectively. A first frontside source/drain contact is disposed above and electrically couples to a first common source/drain region of the first and second pull-down transistors. A first backside via is disposed under and electrically couples to the first common source/drain region. A first backside metal line is disposed under and electrically couples to the first backside via.

Abstract: A memory cell includes first and second active regions and first and second gate structures. The first gate structure engages the first active region in forming a first transistor. The second gate structure engages the second active region in forming a second transistor. The first and second transistors have a same conductivity type. The memory cell further includes a first epitaxial feature on a source region of the first transistor, a second epitaxial feature on a source region of the second transistor, a first frontside contact directly above and in electrical coupling with the first epitaxial feature, a second frontside contact directly above and in electrical coupling with the second epitaxial feature, and a first backside via directly under and in electrical coupling with one of the first and second epitaxial features with another one of the first and second epitaxial features free of a backside via directly thereunder.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

Abstract: The invention concerns a 3D pop-up card having a foldable base card which has an inner side and an outer side, the base card being foldable along a fold and being reversibly transferable from a folded, closed state to an unfolded, open state, wherein a foldable figure is fixed to the inner side of the base card and the foldable figure unfolds autonomously into a three-dimensional structure when the base card is transferred into an open state, wherein the base card is double-layered, the layer which is on the inside in the closed state having at least one slit on each of the two sides of the fold the base card and the foldable figure being connected to one another via L-shaped connecting pieces, and the first leg of an L-shaped connecting piece engaging in a slit and the second leg of an L-shaped connecting piece being attached to the foldable figure.

Abstract: Provided are an information transmission method and device, a storage medium and an electronic device, the method including receiving, by a third transmission node, context information of a first transmission node or a second transmission node transmitted by the first transmission node; and storing, by the third transmission node, the context information.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: Methods, apparatus, and systems that can facilitate the establishment of connections and management of QoS information in UE-to-UE relay sidelink communications are disclosed. In one example aspect, a method for wireless communication includes reporting, by a first communication device to a first base station, at least a first part of Quality of Service (QoS) information applicable between the first communication device and a relay communication device. The first communication device is configured to communicate with a second communication device via the relay communication device. The method also includes receiving, by the first communication device, sidelink configuration information that is based on at least the first part of QoS information from the first base station.

Abstract: A control system for e-bike including a sensor and a driver is disclosed. The sensor senses a pedal of the bike being pedaled to generate a sensing signal. The driver continuously identifies whether the sensing signal matches with an unlocking condition during a first time-duration and whether the sensing signal matches with a mode-determination condition during a second time-duration. The driver controls the e-bike to enter a normal operation mode where a motor of the e-bike is unlocked when the sensing signal matches the unlocking condition, controls the e-bike to enter a standby mode when the sensing signal matches the mode-determination condition under the normal operation mode, or controls the e-bike to return to the normal operation mode when the sensing signal matches the mode-determination condition again under the standby mode.

Abstract: A resin composition includes a copolymer. The copolymer includes an aromatic monomer and an alicyclic monomer. A molecular weight of the copolymer is in a range of 2000 to 5000. Compared with the copolymer, a proportion of the alicyclic monomer is 1% to 30%. A manufacturing method of the resin composition is also provided.

Abstract: A method of wireless communication is described. The wireless communication method includes detecting, at a first device requesting to communication with a third device, a low link quality of a first link associated with the first device or the third device, the low link quality being below a link quality threshold; broadcasting, after the detecting the low link quality, a message to discover a second device capable of establishing a second link with the first device or the third device; and communicating with the third device via the second device using the second link.

Abstract: Methods, apparatus, systems for implementation of wireless communication techniques using device-to-device communication, e.g., sidelink communication, are described. One example method includes receiving, by a first user device, a carrier aggregation, CA, operation information and operating the first user device according to the CA operation information. The first user device is configured to perform a device-to-device communication using CA with the second user device without relaying through a network device.

Abstract: Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.

Abstract: The present invention provides a control method of a flash memory controller. By dividing a plurality of logical address to physical address mapping tables into multiple groups, establishing a group-to-physical address mapping table, a storage unit relationship table and a latest updated storage unit table to manage the flash memory controller, the times of loading the group-to-physical address mapping table into a buffer memory can be reduced, so as to improve the efficiency of the flash memory controller.

Abstract: Method, device and computer program product for wireless communication are provided. A method includes: transmitting, by a first wireless communication terminal to a second wireless communication terminal, an indication to prevent the second wireless communication terminal from sending sidelink assistance information in response to a first capability indication indicating the first wireless communication terminal supporting a sidelink Discontinuous Reception, DRX or supporting a sidelink Discontinuous transmission, DTX, being transmitted to the second wireless communication terminal and a serving cell of the first wireless communication terminal not supporting the sidelink DRX.