Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

Abstract: The invention concerns a 3D pop-up card having a foldable base card which has an inner side and an outer side, the base card being foldable along a fold and being reversibly transferable from a folded, closed state to an unfolded, open state, wherein a foldable figure is fixed to the inner side of the base card and the foldable figure unfolds autonomously into a three-dimensional structure when the base card is transferred into an open state, wherein the base card is double-layered, the layer which is on the inside in the closed state having at least one slit on each of the two sides of the fold the base card and the foldable figure being connected to one another via L-shaped connecting pieces, and the first leg of an L-shaped connecting piece engaging in a slit and the second leg of an L-shaped connecting piece being attached to the foldable figure.

Abstract: Provided are an information transmission method and device, a storage medium and an electronic device, the method including receiving, by a third transmission node, context information of a first transmission node or a second transmission node transmitted by the first transmission node; and storing, by the third transmission node, the context information.

Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.

Abstract: Methods, apparatus, and systems that can facilitate the establishment of connections and management of QoS information in UE-to-UE relay sidelink communications are disclosed. In one example aspect, a method for wireless communication includes reporting, by a first communication device to a first base station, at least a first part of Quality of Service (QoS) information applicable between the first communication device and a relay communication device. The first communication device is configured to communicate with a second communication device via the relay communication device. The method also includes receiving, by the first communication device, sidelink configuration information that is based on at least the first part of QoS information from the first base station.

Abstract: A control system for e-bike including a sensor and a driver is disclosed. The sensor senses a pedal of the bike being pedaled to generate a sensing signal. The driver continuously identifies whether the sensing signal matches with an unlocking condition during a first time-duration and whether the sensing signal matches with a mode-determination condition during a second time-duration. The driver controls the e-bike to enter a normal operation mode where a motor of the e-bike is unlocked when the sensing signal matches the unlocking condition, controls the e-bike to enter a standby mode when the sensing signal matches the mode-determination condition under the normal operation mode, or controls the e-bike to return to the normal operation mode when the sensing signal matches the mode-determination condition again under the standby mode.

Abstract: Methods, apparatus, systems for implementation of wireless communication techniques using device-to-device communication, e.g., sidelink communication, are described. One example method includes receiving, by a first user device, a carrier aggregation, CA, operation information and operating the first user device according to the CA operation information. The first user device is configured to perform a device-to-device communication using CA with the second user device without relaying through a network device.

Abstract: A resin composition includes a copolymer. The copolymer includes an aromatic monomer and an alicyclic monomer. A molecular weight of the copolymer is in a range of 2000 to 5000. Compared with the copolymer, a proportion of the alicyclic monomer is 1% to 30%. A manufacturing method of the resin composition is also provided.

Abstract: A method of wireless communication is described. The wireless communication method includes detecting, at a first device requesting to communication with a third device, a low link quality of a first link associated with the first device or the third device, the low link quality being below a link quality threshold; broadcasting, after the detecting the low link quality, a message to discover a second device capable of establishing a second link with the first device or the third device; and communicating with the third device via the second device using the second link.

Abstract: Some implementations described herein include a complementary metal oxide semiconductor image sensor device and techniques to form the complementary metal oxide semiconductor image sensor device. The complementary metal oxide semiconductor image sensor device includes a includes a first array of photodiodes stacked over a second array of photodiodes. A polarization structure is between the first array of photodiodes and the second array of photodiodes. Signaling generated by the first array of photodiodes (e.g., signaling corresponding to unpolarized light waves) may be multiplexed with signaling generated by the second array of photodiodes (e.g., signaling corresponding to polarized light waves). The complementary metal oxide semiconductor image sensor device further includes a filter structure that filters visible light waves and near infrared light waves amongst the first array of photodiodes and the second array of photodiodes.

Abstract: The present invention provides a control method of a flash memory controller. By dividing a plurality of logical address to physical address mapping tables into multiple groups, establishing a group-to-physical address mapping table, a storage unit relationship table and a latest updated storage unit table to manage the flash memory controller, the times of loading the group-to-physical address mapping table into a buffer memory can be reduced, so as to improve the efficiency of the flash memory controller.

Abstract: Method, device and computer program product for wireless communication are provided. A method includes: transmitting, by a first wireless communication terminal to a second wireless communication terminal, an indication to prevent the second wireless communication terminal from sending sidelink assistance information in response to a first capability indication indicating the first wireless communication terminal supporting a sidelink Discontinuous Reception, DRX or supporting a sidelink Discontinuous transmission, DTX, being transmitted to the second wireless communication terminal and a serving cell of the first wireless communication terminal not supporting the sidelink DRX.

Abstract: The present disclosure discloses a three-dimensional integration system of an RFID chip and a supercapacitor and a manufacturing method thereof.

Abstract: Apparatus and associated methods relate to a Source Terminal Replication Compensation Circuit for simulating an accurate fraction of a load current. In an illustrative example, a Source Terminal Replication Compensation Circuit (STRCC) may be connected to a motor driving circuit. The STRCC, for example, may include a simulation transistor configured to have a simulated structure of a main transistor in a motor driving circuit. The STRCC may include, for example, a disturbance rejection module (DRM). The DRM may be connected to a source terminal of the sense transistor, and a source terminal of the main transistor. When the DRM is connected to a current sensing resistor, a sense current is generated as a predetermined fraction of a load current of the motor driving circuit, wherein the predetermined fraction is less than 1%. Various embodiments may advantageously reduce heat dissipations at the current sensor resistor.

Abstract: A testing circuitry includes an on-chip clock controller circuit and a first clock adjustment circuit. The on-chip clock controller circuit is configured to generate an internal clock signal in response to a reference clock signal, a scan enable signal, a plurality of enable bits, and a scan mode signal, and generate a first control signal in response to the scan enable signal, a plurality of first bits, and the reference clock signal. The first clock adjustment circuit is configured to generate a first test clock signal according to the first control signal and the internal clock signal, in order to test a multicycle path circuit. The plurality of first bits are to set a first pulse of the first test clock signal, in order to prevent the multicycle path circuit from occurring a timing violation.

Abstract: A wireless communication method for use in a first wireless network node is disclosed. The method comprises receiving status information indicating at least one missing packet for which a successfully delivery has not been confirmed by a first device, wherein the first device connected to the first wireless network via a second device, and transmitting, to a second wireless network node, the at least one missing packet.

Abstract: A semiconductor device includes a substrate and a transistor. The transistor includes a first channel region overlying the substrate and a source/drain region in contact with the first channel region. The source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a functional cell region including an n-type functional transistor and a p-type functional transistor. The semiconductor structure also includes a first power transmission cell region including a first cutting feature and a first contact rail in the first cutting feature. The semiconductor structure also includes a first power rail electrically connected to a source terminal of the p-type functional transistor and the first contact rail of the first power transmission cell region. The semiconductor structure also includes a second power transmission cell region adjacent to the first power transmission cell and including a second cutting feature and second contact rail in the second cutting feature. The semiconductor structure also includes an insulating strip extending from the first cutting feature to the second cutting feature in a first direction.

Abstract: A semiconductor structure includes a substrate, first channel layers vertically stacked over the substrate in a first region, and second channel layers vertically stacked over the substrate in a second region. The first and second regions have opposite conductivity types. The semiconductor structure also includes a threshold voltage (Vt) modulation layer wrapping around each of the second channel layers in the second region. The first region is free of the Vt modulation layer. The semiconductor structure also includes a gate dielectric layer wrapping around each of the first channel layers and the second channel layers over the Vt modulation layer, and a work function metal layer disposed on the gate dielectric layer and wrapping around each of the first channel layers and the second channel layers.

Abstract: Presented are systems and methods for traffic transmission in an integrated access and backhaul (IAB) network. A first network node can send a first message to a second network node. The first message can include information to manage the migration of traffic between a first topology managed by the first network node and a second topology managed by the second network node. A first network node can send a first message to an IAB-node. The first message can include information for re-routing of traffic.