Abstract: An adjustment method of screen brightness comprises the following steps. Step (a): obtaining a relationship between a brightness and refresh rate of the screen. Step (b): adjusting the screen to a highest refresh rate and displaying an image at a first brightness. Step (c): decreasing the first brightness by a unit brightness value and variably displaying the image between a first refresh rate and a second refresh rate. Step (d): determining whether the image does not flicker; if not, repeating step (c). Step (e): calculating a first brightness difference between a decreased brightness of the screen and a brightness corresponding to a lowest refresh rate when the image does not flicker. Step (f): determining whether the first brightness difference is less than a screen flicker threshold; if yes, decreasing the first brightness corresponding to the highest refresh rate to obtain an adjusted brightness corresponding to the highest refresh rate.

Abstract: A device includes a substrate, a first semiconductor channel over the substrate, a second semiconductor channel over the substrate and laterally offset from the first semiconductor channel, and a third semiconductor channel over the substrate and laterally offset from the second semiconductor channel. A first gate structure, a second gate structure, and a third gate structure are over and lateral surround the first, second, and third semiconductor channels, respectively. A first inactive fin is between the first gate structure and the second gate structure, and a second inactive fin is between the second gate structure and the third gate structure. A bridge conductor layer is over the first, second, and third gate structures, and the first and second inactive fins. A dielectric plug extends from an upper surface of the second inactive fin, through the bridge conductor layer, to at least an upper surface of the bridge conductor layer.

Abstract: Methods, systems, and devices related to digital wireless communication, and more specifically, to techniques related to transmitting sidelink capability and security information between peer terminals. In one exemplary aspect, a method for wireless communication includes transmitting, by the first terminal, capability information associated with the first terminal to the second terminal based on a triggering event, the capability information associated with the first terminal relating to a capability of the first terminal to directly communicate with a second terminal. In another exemplary aspect, a method for wireless communication includes receiving information associated with a first terminal from the first terminal, the capability information associated with the first terminal relating to a capability of the first terminal to directly communicate with the second terminal. The method also includes determining transmission parameters for unicast communication with the first terminal.

Abstract: A method of forming a semiconductor device includes: forming a fin structure protruding above a substrate, where the fin structure comprises a fin and a layer stack overlying the fin, where the layer stack comprises alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin structure; forming openings in the fin structure on opposing sides of the dummy gate structure, where the openings extend through the layer stack into the fin; forming a dielectric layer in bottom portions of the openings; and forming source/drain regions in the openings on the dielectric layer, where the source/drain regions are separated from the fin by the dielectric layer.

Abstract: Semiconductor devices and method of forming the same are provided. In one embodiment, a semiconductor device includes a first transistor and a second transistor. The first transistor includes two first source/drain features and a first number of nanostructures that are stacked vertically one over another and extend lengthwise between the two first source/drain features. The second transistor includes two second source/drain features and a second number of nanostructures that are stacked vertically one over another and extend lengthwise between the two second source/drain features.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: A non-vanadium based metal oxide catalyst composition is provided. The catalyst composition comprises at least one metal oxide, comprising manganese oxide and being dispersed on the support, and a support comprising particles of composite oxide of aluminum and at least one metal selected from cerium, manganese and titanium, wherein aluminum is present in the composite oxide in an amount of from 50% to 80% by weight, calculated as Al2O3, based on the total weight of the composite oxide, and wherein manganese oxide is present in the metal oxide catalyst composition in an amount of from 2.5% to 10% by weight, calculated as MnO2, based on the total weight of the metal oxide catalyst composition.

Abstract: Described herein are multi-layered windows for use in chemical-mechanical planarization (CMP) systems and CMP processes. The multi-layered windows of the present disclosure include a transparent structural layer and a hydrophilic surfactant applied to at least a portion of at least one surface of the transparent structural layer. Such multi-layered windows may be in the polishing pad, the platen, or both.

Abstract: A wireless charging receiver that includes a first coil, a second coil, and a nanocrystalline sheet is disclosed. The first coil is configured to be located within a recess in the nanocrystalline sheet and is positioned between the second coil and the nanocrystalline sheet. The first coil includes first and second terminals and the second coil includes third and fourth terminals. The first terminal is connected to the third terminal and the second terminal is connected to the fourth terminal to electrically connect the first coil to the second coil. The first coil may be formed of a flexible printed circuit board having a continuous trace or may be formed of litz wire. The first coil may be a hybrid coil with a first portion formed of a flexible printed circuit board having a continuous trace and with a second portion formed of litz wire.

Abstract: Embodiments provided herein, provide for polypeptides, pharmaceutical compositions, and methods that can be used, for example, to target at least two types of cells to modulate the activity of the same to treat disorders, such as autoimmune disorders or cancers.

Abstract: Method, device and computer program product for wireless communication are provided. A method includes: receiving, by a wireless communication terminal from a wireless communication node, a multi-path configuration for at least one of an indirect path or a direct path of the wireless communication terminal; and performing, by the wireless communication terminal, a data transmission via at least one of the direct path or the indirect path according to the multi-path configuration.

Abstract: A method of manufacturing a semiconductor structure includes: forming a light-absorption layer in a substrate, wherein the light-absorption layer includes an upper surface above an upper surface of the substrate; forming a first doped region and a second doped region in the light-absorption layer adjacent to the first doped region; depositing a first patterned mask layer over the light-absorption layer, wherein the first patterned mask layer includes an opening exposing the second doped region and covers the first doped region; forming a first silicide layer in the opening on the second doped region; and forming a second silicide layer on the first doped region.

Abstract: The present application provides a session management method, an entity, a network device, and a storage medium. The method includes: sending, on the basis of a service requirement, a group-level session management request to a control plane entity, where the group-level session management request carries group information for representing a virtual network group that requires group-level session management; receiving a response message returned by the control plane entity in response to the group-level session management request; and performing, according to content carried in the response message, corresponding session service management on the virtual network group. (FIG.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure includes first channel members vertically stacked, second channel members vertically stacked, a first source/drain feature abutting the first channel members, a second source/drain feature abutting the second channel members, a first gate structure engaging the first channel members, a second gate structure engaging the second channel members, a first metal interconnect layer disposed at a frontside of the semiconductor device, and a second metal interconnect layer disposed at a backside of the semiconductor device. The first and second gate structures are stacked vertically between the first and second metal interconnect layers. The exemplary semiconductor structure also includes an isolation structure stacked vertically between the first and second metal interconnect layers. The isolation structure includes an air gap stacked laterally between the first and second gate structures.

Abstract: Semiconductor structures and method for manufacturing the same are provided. The semiconductor structure includes a substrate and a first fin structure formed over the substrate. The semiconductor structure also includes an isolation structure formed around the first fin structure and a protection layer formed on the isolation structure. The semiconductor structure also includes first nanostructures formed over the first fin structure and a gate structure surrounding the first nanostructures. In addition, a bottom surface of the gate structure and the top surface of the isolation structure are separated by the protection layer.

Abstract: An assembly may comprise a mounting tray configured to have at least one printed circuit board mounted to its top surface and further comprises a set of spools extending from an outer surface of the first mounting tray, each spool including a barrel and a flange. The assembly may comprise a base pan including a set of keyholes, each keyhole including an entry hole and a slot extending from the entry hole. The base pan is configured to attach to the mounting tray by engaging the set of spools with a group of keyholes, respectively, by inserting the flange of each spool through the entry hole of a corresponding keyhole and moving the mounting tray relative to the base pan such that the barrel of each spool is received within the slot, and the flange of each spool of the set of spools is secured by a rim of the slot of the corresponding keyhole.

Abstract: An inspection apparatus includes: an inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to emit a first radiation beam for inspecting the photomask; and an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop.

Abstract: Methods, apparatus and systems for wireless communication are described. One method includes receiving, by a network device of a wireless network, an indication to perform N one-to-one mappings, wherein each mapping is between a Quality of Service (QoS) flow and a radio bearer, wherein N is a positive integer and controlling communication in the wireless network according to the indication.

Abstract: Various embodiments of the present disclosure are directed towards a semiconductor structure including a first substrate comprising a first semiconductor material. A first light sensor is disposed within the first substrate. The first light sensor is configured to absorb electromagnetic radiation within a first wavelength range. A second light sensor is disposed within an absorption structure underlying the first substrate. The second light sensor is configured to absorb electromagnetic radiation within a second wavelength range different from the first wavelength range. The absorption structure underlies the first light sensor and comprises a second semiconductor material different from the first semiconductor material.

Abstract: The present disclosure provides an application log coding output method, a device, a system, and a computer readable storage medium. The method comprises: loading a conversion appender using an extension mechanism of a native logger, loading a log converter and a native appender for outputting a log message using the conversion appender, the log converter comprising one or more log sub-converters, and loading the log sub-converters specified by an initialization parameter using the log converter; receiving the log message sent by the native logger using the conversion appender, scheduling the log sub-converters specified by the initialization parameter to execute log coding, and sending the processed log to the native appender for secure output. By using the method, diversified log coding output can be achieved without retrofitting an application, and the method is more friendly to developers.