Abstract: A projection screen and a processing method therefor, wherein the projection screen comprises, in sequence from the incident side of projection light, a diffusion layer, a microlens array and a substrate. The inner side of the substrate is provided with a Fresnel microstructure, and part of the surface of the Fresnel microstructure is provided with a reflecting layer while the remaining part of the surface is a light absorbing layer. The microlens array is used for focusing the projection light on the reflecting layer. The reflecting layer is used for reflecting projection light back to the field of view of viewers. Ambient light is mostly absorbed by the light absorbing layer. The settings of the structure and dimension of the microlens array enable the projection light to be only incident onto the reflecting layer of the Fresnel microstructure and the ambient light to be mostly absorbed by the light absorbing layer.

Abstract: An energy storage device and a battery cabinet are provided according to the present disclosure. The energy storage device includes a plurality of battery clusters and a high-voltage switch box. A positive input terminal of the high-voltage switch box is connected to positive electrodes of the plurality of battery clusters, a negative input terminal of the high-voltage switch box is connected to negative electrodes of the plurality of battery clusters, and an output terminal of the high-voltage switch box is configured to connect an electrical device. The high-voltage switch box is configured to control the plurality of battery clusters to be electrically connected to/disconnected from the electrical device. The cost of a battery cabinet is reduced in the present disclosure.

Abstract: There are provided compounds of Formula (A) and pharmaceutically acceptable salts and esters thereof, and pharmaceutical compositions thereof, used for the prevention or treatment in a manual of joint and bone disorders such as arthritis and osteoporosis.

Abstract: A magnetic memory device includes a bottom electrode layer, a magnetic tunneling junction (MTJ) stack disposed on the bottom electrode layer, a capping layer disposed on the MTJ stack, and a top electrode layer disposed on the capping layer. The top electrode layer comprises RuO2.

Abstract: A high-efficiency visible-light catalytic material, a preparation method and an application thereof are provided by the present application, relating to the technical field of photocatalytic materials. The present application prepares photocatalytic material Ag@AgCl/CA by compounding Ag@AgCl and calcium alginate gel, and the prepared photocatalytic material is shaped as small particles. The photocatalytic material Ag@AgCl/CA is used to degrade tetracycline antibiotics.

Abstract: A first portion of a security device, the first portion configured to have a separate state with respect to a second portion and a combined state with respect to the second portion, such that when in the combined state, the first portion is mated, interlocked, and/or locked with the second portion to collectively form the security device.

Abstract: A method for realizing a Hadamard product, a device and a storage medium, includes: acquiring a plurality of to-be-treated optical signals with unequal wavelengths (S101); inputting the to-be-treated optical signals into a wavelength division multiplexer (S102); by using the wavelength division multiplexer, feeding the to-be-treated optical signals to a micro-ring-resonator component, wherein the micro-ring-resonator component includes a plurality of micro-ring-resonator groups each of which is formed by two micro-ring resonators with equal radii (S103); and applying a corresponding electric current to the micro-ring-resonator component, to obtain a result of the Hadamard product according to an outputted light intensity (S104).

Abstract: A photoresist, a photoresist composition, a method for patterning a photoresist and a method for preparing a printed circuit board are disclosed in the present application. The photoresist includes an organic solvent and titanium zirconium oxide nanoparticles. The general molecular formula of the titanium zirconium oxide nanoparticles is TixZryOzLn, wherein x, y and z are each independently an integer in a range from 1 to 6, n is an integer in a range from 5 to 30, and L is an organic ligand including a free-radical polymerizable group.

Abstract: A projection screen includes a substrate with a first substrate surface. The first substrate surface includes a first region and a second region adjacent to the first region. Multiple first wire grid bodies extending in a first direction are provided in the first region. Multiple second wire grid bodies extending in the first direction are provided in the second region. Each first wire grid body includes a first contact surface connected to the substrate and a first surface, and a first angle is formed therebetween. The first angles gradually decrease in a direction from the first region to the second region. Each second wire grid body includes a second contact surface connected to the substrate and a third surface, and a third angle is formed therebetween. The third angles gradually increase in a direction from the first region to the second region.

Abstract: Provided is a projection screen, the taper angles of a plurality of triangular pyramid units arranged in an array are designed to gradually change according to a predetermined relationship, so that the image light emitted from the projector is reflected by a microstructure layer with a triangular pyramid unit and then converges to a range centered on the human eye, which reduces the difference in brightness at different viewing positions, so as to ensure that the projection screen has high brightness uniformity and high gain.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A method for realizing a Hadamard product, a device and a storage medium, includes: acquiring a plurality of to-be-treated optical signals with unequal wavelengths; inputting the to-be-treated optical signals into a wavelength division multiplexer; by using the wavelength division multiplexer, feeding the to-be-treated optical signals to a micro-ring-resonator component, wherein the micro-ring-resonator component includes a plurality of micro-ring-resonator groups each of which is formed by two micro-ring resonators with equal radii; and applying a corresponding electric current to the micro-ring-resonator component, to obtain a result of the Hadamard product according to an outputted light intensity.

Abstract: A security device system including portions configured to have a combined state and a separated state. In the combined state, circuitry is configured to have an armed state and a not-armed state, and to trigger an alarm during a breach of the armed state. Depending on the embodiment, at least one of the portions, and in some embodiments more than one of the portions, participate in the armed and not-armed states. In some embodiments, the security device system includes an alarm device portion, a cradle portion, and a stratum portion.

Abstract: A cleaning system includes a cleaning robot and a cleaning base station. The cleaning robot includes a machine body, a first cleaning assembly and a pushing assembly, the first cleaning assembly is detachably arranged on a bottom portion of the machine body, and the pushing assembly is at least partially arranged in the machine body and connected with the first cleaning assembly. when the cleaning robot is docked with the cleaning base station, the pushing assembly is capable of pushing the first cleaning assembly to move from a first state to a second state and/or from the second state to a third state.

Abstract: The method includes: acquiring a plurality of to-be-treated optical signals with unequal wavelengths; inputting the to-be-treated optical signals into a micro-ring-resonator array, wherein the micro-ring-resonator array includes a plurality of micro-ring resonators that are connected in series; applying a corresponding electric current to the micro-ring-resonator array, to adjust a transfer function of each of the micro-ring resonators to reach a target value; and feeding an optical signal outputted by the micro-ring-resonator array into a photodiode, to obtain an operation result of the average pooling of the neural network.

Abstract: The projection screen includes a reflective layer and a light-absorbing layer, where the reflective layer is configured to receive and reflect projection light, and the light-absorbing layer is arranged on the reflective layer; the light-absorbing layer includes a plurality of irregularly arranged light-absorbing members; and the light-absorbing members are configured to absorb at least a part of the projection light, so as to make a brightness of a projected image uniform.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

Abstract: A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a contact plug on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.

Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.