Abstract: The present disclosure provides raw material re-feeding apparatus for manufacturing a monocrystal and monocrystal manufacturing apparatus including the same. The raw material re-feeding apparatus is provided outside a monocrystal furnace and includes a storage and a feeder in communication with the storage. A discharging end of the feeder is located in the monocrystal furnace and movable relative to the monocrystal furnace, so that the discharging end of the feeder is immersed in a silicon melt when the material re-feeding is performed, and thus the material is melted and re-fed.

Abstract: Presented herein is a stage area for “focused” video that is configured to allow for dynamic layout changes during an online video conference or meeting. By providing a user interface environment that allows a user (meeting participant) to customize the stage, each participant can choose their own view, and the meeting host can fully customize a view for every participant in the meeting.

Abstract: A semiconductor structure includes: a pad structure disposed above a substrate; and a capacitor structure which is disposed between the substrate and the pad structure, is arranged to be opposite to the pad structure, and includes at least two capacitor units connected in parallel and spaced apart from each other, each of the capacitor units includes at least one capacitor device.

Abstract: A memory device includes a bottom electrode, a resistance switching element over the bottom electrode, a top electrode over the resistance switching element, and a dielectric layer. The dielectric layer surrounds the bottom electrode, the resistance switching element, and the top electrode. The resistance switching element has a first portion between the top electrode and the dielectric layer.

Abstract: Embodiments of the present application provide an image enhancement method, a chip, and an image acquisition device. The method comprises: storing, by a main processor, a preset number of Raw image frames to be processed currently acquired from a sensor in a first off-chip memory, into the on-chip memory; performing, by a first neural network processor, image fusion on a preset number of Raw image frames to be fused currently obtained based on the preset number of Raw image frames to be processed currently in the on-chip memory based on a preset image fusion network, to obtain a fused Raw image frame, and storing it into the on-chip memory; sending, by the main processor to an ISP chip, a target Raw image frame to be sent currently obtained based on the fused Raw image frame in the on-chip memory.

Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.

Abstract: Disclosed are an unblocking apparatus for a furnace discharging pipe and a use method. The unblocking apparatus includes a rail, a rail car that may move along the rail, an unblocking drive mechanism arranged on the rail car, a heat-unblocking component, a cold-unblocking component, and a material receiving component that is used to receive a blocking material in the discharging pipe, and a drive end of the unblocking drive mechanism is detachably connected with one end of the heat-unblocking component and the cold-unblocking component respectively. The present application effectively handles different blockage situations of the furnace discharging pipe by connecting the unblocking drive mechanism with an unblocking rod capable of heat-unblocking and a drilling rod capable of cold-unblocking, thereby two modes of heat-unblocking and cold-unblocking are performed on the furnace discharging pipe; and the discharging pipe may be unblocked by a remote operation.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region; a first MTJ on the MTJ region; a first metal interconnection on the logic region; and a cap layer extending from a sidewall of the first MTJ to a sidewall of the first metal interconnection. Preferably, the cap layer on the MTJ region and the cap layer on the logic region comprise different thicknesses.

Abstract: A semiconductor structure includes a substrate having a memory device region and a logic device region, a first dielectric layer on the substrate, a plurality of memory stack structures on the first dielectric layer on the memory device region, an insulating layer conformally covering the memory stack structures and the first dielectric layer, a second dielectric layer on the insulating layer and completely filling the spaces between the memory stack structures, and a first interconnecting structure formed in the second dielectric layer on the logic device region. A top surface of the first interconnecting structure is flush with a top surface of the second dielectric layer and higher than top surfaces of the memory stack structures.

Abstract: An OCT common-path probe for identifying a sample includes an optical fiber, a first GRIN lens and a second GRIN lens. The optical fiber outputs a light beam from its end facet. The first GRIN lens is cemented to the second GRIN lens, and located between the optical fiber and the second GRIN lens. A joint surface between the first GRIN lens and the second GRIN lens reflects a part of the light beam to form a reference beam, and allows another part of the light beam to pass through to form a sample beam. The reference beam is focused on the end facet by the first GRIN lens. The sample beam is focused on the sample by the second GRIN lens, reflected by the sample to travel through the second GRIN lens, the joint surface and the first GRIN lens sequentially, and thereby focused on the end facet.

Abstract: An antibacterial cupric-ion-fiber corrective shoe-pad and a manufacturing method thereof are disclosed. The shoe-pad is manufactured by staking a cupric-ion-fiber face layer, a shock-absorbing layer, a support layer, and an antibacterial and anti-slip layer in order, and laminating the layers into a laminate in a mold through hot pressing, wherein different temperatures are applied to the shoe-pad during the hot pressing to form support zones as well as a heel enclosure and its extension segment that enclose rear and outer sides of the shoe-pad, thereby providing a human foot with protective and supportive effects such as shock absorption and pressure distribution. When the shoe-pad is placed into a shoe, the cupric-ion-fiber face layer when contacting the human foot provides long-lasting antibacterial and anti-odor effects, and the bottommost antibacterial and anti-slip layer prevents the shoe-pad from undesirably shifting in the shoe, thereby enhancing user comfort.

Abstract: A computer-implemented method, system and computer program product for identifying a root cause of failures in a CI/CD pipeline. Tags for tasks, templates and/or variables of the operator and the CI/CD pipeline are extracted. Code of the tagged tasks, templates and/or variables of the operator are mapped with the code of the tagged tasks, templates and/or variables of the Cl/CD pipeline forming mappings. Additionally, code of the tagged tasks, templates and/or variables between the roles of the operator are mapped forming mappings. Upon receiving a notification of a failure in the Cl/CD pipeline, a root cause of the failure is identified by searching such mappings for a mapped role or task in relation to the role or task involving the software product which failed in the CI/CD pipeline and searching the log file of the operator for an error in connection with such mapped role or task.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.

Abstract: A photoelectric conversion compound is provided. The photoelectric conversion compound has a structure represented by formula (I): wherein D represents an inorganic luminescent group; each of R1, R2, and R3 independently represents a hydrogen atom or a C1-6 alkyl group; R4 represents a single bond or a C1-6 alkylene group; m represents an integer of 1-10; k represents an integer of 1-1,000; and n represents an integer of 1-10,000.

Abstract: An optical circuit building method, an optical circuit, and an optical signal processing method and apparatus, the method comprising: constructing a convolution weight matrix corresponding to multiple groups of convolution weights (S11); performing singular value decomposition on the convolution weight matrix to obtain a first unitary matrix, a diagonal matrix and a second unitary matrix (S12); separately determining a first MZI structure corresponding to the first unitary matrix, a second MZI structure corresponding to the diagonal matrix and a third MZI structure corresponding to the second unitary matrix (S13); and connecting the first MZI structure, the second MZI structure and the third MZI structure to obtain an optical circuit (S14). In an optical circuit obtained by means of the foregoing, convolution calculation processing corresponding to multiple groups of convolution weights may be carried out at the same time, operation depth may be reduced, and operation efficiency may be improved.

Abstract: Disclosed are a data processing method and apparatus based on an optical neural network, a computer-readable storage medium, and an optical neural network.

Abstract: A method and an apparatus for generating image data, which relate to the technical field of image processing. The method comprises: obtaining a first pixel value of each pixel in a first image based on original pixel values of the first image acquired by an image acquisition device when ambient light brightness is greater than a first preset brightness threshold; obtaining a second pixel value of each pixel by dividing the first pixel value of this pixel by a preset multiple; the second preset brightness threshold is less than the first preset brightness threshold; obtaining a third pixel value of each pixel by adding Poisson noise based on a total system gain of the image acquisition device on the basis of the second pixel value of this pixel; generating original pixel values of a target image which corresponds to the first image for which the ambient light brightness is less than the second preset brightness threshold based on respective third pixel values.

Abstract: A dendritic polymer contains a dendritic polyester as a core, and a plurality of arms obtained by means of polymerization of an alkenyl monomer. The root-mean square radius of gyration of the dendritic polymer does not exceed 100 nm. The alkenyl monomer contains a non-ionic monomer and an anionic monomer. The polymeric segments formed by a monomer generally used for synthesizing a filtrate loss reducer are used as the arms of the dendritic polymer, which is obtained by means of free radical polymerization. Compared with a linear polymer having an identical molecular weight, the dendritic polymer has a smaller root-mean-square radius of gyration and is more compact in structure. suitable for use in a drilling fluid.

Abstract: A method of manufacturing a hybrid random access memory in a system-on-chip, including steps of providing a semiconductor substrate with a magnetoresistive random access memory (MRAM) region and a resistive random-access memory (ReRAM) region, forming multiple ReRAM cells in the ReRAM region on the semiconductor substrate, forming a first dielectric layer on the semiconductor substrate, wherein the ReRAM cells are in the first dielectric layer, forming multiple MRAM cells in the MRAM region on the first dielectric layer, and forming a second dielectric layer on the first dielectric layer, wherein the MRAM cells are in the second dielectric layer.

Abstract: A spheroidal graphite cast iron comprising, in mass percentage: 2.8% or more and 3.3% or less of carbon; 2.5% or more and 4.0% or less of silicon; 0.32% or more and 0.40% or less of manganese; 0.020% or more and 0.030% or less of phosphorus; 0.020% or more and 0.035% or less of sulfur; 0.030% or more and 0.050% or less of magnesium; 0.010% or more and 0.050% or less in total of lanthanum and cerium; and 0.0020% or more and 0.0050% or less of calcium, with the balance being iron and inevitable impurities.