Abstract: An environmentally-friendly flexible conductive polyurethane (PU) and a preparation method thereof are disclosed. The environmentally-friendly flexible conductive PU is prepared by subjecting a mixture of a component A and a component B in a specified mass ratio to in-situ solvent-free polymerization, where the component A is prepared from a polyol, a T-type chain extender, a diselenide diol, high-conductivity carbon black, a dispersing agent, a catalyst, and a leveling agent, and the component B is prepared from a polyisocyanate, a polyol, a multi-walled carbon nanotube (MWCNT), and a dispersing agent. The PU has a reliable electrically-conductive function, and shows a self-healing function under room temperature or light conditions when damaged, wherein a microphase separation value HBI (0.5 to 3.

Abstract: A foam production method includes mixing liquid nitrogen with a foaming material to produce foam. A gas is produced in situ from liquid nitrogen. As the ratio of the volume of the gas produced by gasification of liquid nitrogen to the volume of the liquid nitrogen is relatively high, when a large gas supply flow is needed to generate a large foam flow, a liquid nitrogen storage device of a small volume can be used instead of bulky air supply devices such as high-pressure gas cylinders, air compressors, air compressor sets and the like, reducing the volume of the air supply device. In addition, the liquid nitrogen used in foaming will release nitrogen gas after the foam blast, such that the nitrogen is also able to inhibit combustion on the surface of burning materials, accelerating the extinguishing of the fire.

Abstract: This application provides techniques of generating interactive videos. The techniques comprise obtaining an original video, creating an interactive track for the original video to obtain an initial video, and adding an interactive component to the interactive track; and generating an interactive video by rendering at least one interactive video frame and other video frames of the initial video based on the interactive component. In this way, an interactive video with an interactive capability can be generated without additionally adding a data channel to implement an interaction function, thereby reducing processing load of a terminal and reducing resource consumption of the terminal.

Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.

Abstract: Base station antennas are provided. A base station antenna includes a reflector that has a plurality of faces that face in different directions. The base station antenna includes a plurality of arrays of radiating elements that are on the faces, respectively, of the reflector. Moreover, the base station antenna includes a plurality of parasitic elements that are on the faces. Related methods of operating a base station antenna are also provided.

Abstract: Disclosed are an unblocking apparatus for a furnace discharging pipe and a use method. The unblocking apparatus includes a rail, a rail car that may move along the rail, an unblocking drive mechanism arranged on the rail car, a heat-unblocking component, a cold-unblocking component, and a material receiving component that is used to receive a blocking material in the discharging pipe, and a drive end of the unblocking drive mechanism is detachably connected with one end of the heat-unblocking component and the cold-unblocking component respectively. The present application effectively handles different blockage situations of the furnace discharging pipe by connecting the unblocking drive mechanism with an unblocking rod capable of heat-unblocking and a drilling rod capable of cold-unblocking, thereby two modes of heat-unblocking and cold-unblocking are performed on the furnace discharging pipe; and the discharging pipe may be unblocked by a remote operation.

Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.

Abstract: Embodiments of the present application provide an image enhancement method, a chip, and an image acquisition device. The method comprises: storing, by a main processor, a preset number of Raw image frames to be processed currently acquired from a sensor in a first off-chip memory, into the on-chip memory; performing, by a first neural network processor, image fusion on a preset number of Raw image frames to be fused currently obtained based on the preset number of Raw image frames to be processed currently in the on-chip memory based on a preset image fusion network, to obtain a fused Raw image frame, and storing it into the on-chip memory; sending, by the main processor to an ISP chip, a target Raw image frame to be sent currently obtained based on the fused Raw image frame in the on-chip memory.

Abstract: A method includes: obtaining and splicing a plurality of frames of point cloud data to obtain a complete point cloud model of an indoor structure; extracting point cloud plane features corresponding to the complete point cloud model, and classifying the point cloud plane features into indoor structure types comprising a floor, a wall, and a ceiling; projecting point cloud data of the wall onto a plane of the floor to generate a planar grid graph; and generating a two-dimensional plane view of the indoor structure based on the planar grid graph.

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a first inter-metal dielectric (IMD) layer on a substrate and a metal interconnection in the first IMD layer, forming a magnetic tunneling junction (MTJ) and a top electrode on the metal interconnection, forming a spacer adjacent to the MTJ and the top electrode, forming a second IMD layer around the spacer, forming a cap layer on the top electrode, the spacer, and the second IMD layer, and then patterning the cap layer to form a protective cap on the top electrode and the spacer.

Abstract: A projection screen includes an optical collimating layer and a surface diffusion layer which are arranged in sequence. A grating absorption layer for absorbing ambient light from various directions except a projection light direction is also provided between the optical collimating layer and the surface diffusion layer. The grating absorption layer includes a plurality of light-absorption ring-shaped units with different radii. The plurality of light-absorption ring-shaped units are arranged in a concentric ring. Each of the light-absorption ring-shaped units consists of a plurality of gratings arranged in the circumferential direction of the concentric ring. By taking a vertical symmetrical center line of the projection screen as a center, in a direction extending along the circumferential direction of the concentric ring to the left side and the right side of the projection screen, the distance between two adjacent gratings in the same light-absorption ring-shaped unit gradually increases.

Abstract: Disclosed herein is a flexible sensing interface, comprising: a sensor, comprising: a core; an inner electrode in the form of a conductive material in contact with the core; an inner dielectric material substantially encasing the inner electrode; an outer electrode in the form of a conductive material in contact with the inner dielectric material and in electrical communication with the inner electrode; and an outer dielectric material substantially encasing the outer electrode; wherein the inner dielectric material and the outer dielectric material comprise an elastic material. Also disclosed herein are systems and methods for making and using the same.

Abstract: A method for manufacturing a memory device is provided. The method includes etching an opening in a first dielectric layer; forming a bottom electrode, a resistance switching element, and a top electrode in the opening in the first dielectric layer; forming a second dielectric layer over the bottom electrode, the resistance switching element, and the top electrode; and forming an electrode via connected to a top surface of the top electrode in the second dielectric layer.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts top surfaces of the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: Intelligent process management is provided. A start time is determined for an additional process to be run on a worker node within a duration of a sleep state of a task of a process already running on the worker node by adding a first defined buffer time to a determined start time of the sleep state of the task. A backfill time is determined for the additional process by subtracting a second defined buffer time from a determined end time of the sleep state of the task. A scheduling plan is generated for the additional process based on the start time and the backfill time corresponding to the additional process. The scheduling plan is executed to run the additional process on the worker node according to the start time and the backfill time corresponding to the additional process.

Abstract: A method for fabricating semiconductor device includes the step of forming a magnetic tunneling junction (MTJ) on a substrate, in which the MTJ includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer and the free layer includes a magnesium oxide (MgO) compound. According to an embodiment of the present invention, the free layer includes a first cap layer on the barrier layer, a spacer on the first cap layer, and a second cap layer on the spacer.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection and a second metal interconnection in the first IMD layer; forming a channel layer on the first metal interconnection and the second metal interconnection; forming a magnetic tunneling junction (MTJ) stack on the channel layer; and removing the MTJ stack to form a MTJ.