Abstract: A semiconductor device for internet of things (IoT) device includes a substrate having an array region defined thereon and a ring of dummy pattern surrounding the array region. Preferably, the ring of dummy pattern includes a plurality of magnetic tunneling junctions (MTJs) and a ring of metal interconnect pattern overlapping the MTJs and surrounding the array region. The semiconductor device further includes a gap between the array region and the ring of dummy pattern.

Abstract: A semiconductor device includes a substrate, a first dielectric layer, a second dielectric layer, and a third dielectric layer. The first dielectric layer is disposed on the substrate, around a first metal interconnection. The second dielectric layer is disposed on the first dielectric layer, around a via and a second metal interconnection. The second metal interconnection directly contacts the first metal interconnection. The third dielectric layer is disposed on the second dielectric layer, around a first magnetic tunneling junction (MTJ) structure and a third metal interconnection. The third metal interconnection directly contacts the first MTJ structure and the second metal interconnection, and the first MTJ structure directly contacts the via.

Abstract: Provided is a mutant of an antibody or fragment thereof, characterized in that the antibody or fragment thereof contains a light-chain constant region, and according to the Kabat numbering system, the amino acid at position 166 is mutated to cysteine.

Abstract: A photoelectric conversion compound is provided. The photoelectric conversion compound has a structure represented by formula (I): wherein D represents an inorganic luminescent group; each of R1, R2, and R3 independently represents a hydrogen atom or a C1-6 alkyl group; R4 represents a single bond or a C1-6 alkylene group; m represents an integer of 1-10; k represents an integer of 1-1,000; and n represents an integer of 1-10,000.

Abstract: A processing path generating method includes the following steps. An image-capturing device is moved to the first position of the region of interest to perform an image-capture on a workpiece, so as to obtain a first image. The image-capturing device is moved to a second position to perform the image-capture on the workpiece, so as to obtain a second image. A first edge characteristic and a second edge characteristic of the workpiece are obtained according to the first image and the second image. Three-dimensional edge information of the workpiece is fitted according to the first edge characteristic and the second edge characteristic. A processing path is generated according to the three-dimensional edge information.

Abstract: A device comprises a first dielectric layer, a first conductor, a carbon-containing etch stop layer, a second dielectric layer, and a second conductor. The first conductor has a lower portion in the first dielectric layer. The carbon-containing etch stop layer wraps an upper portion of the first conductor. The second dielectric layer is over the carbon-containing etch stop layer. An interface formed by the second dielectric layer and the carbon-containing etch stop layer is higher over the first conductor than over the first dielectric layer. The second conductor is in the second dielectric layer.

Abstract: Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.

Abstract: A sealing device for a gas-liquid two-phase fluid medium under variable working conditions includes a rotating shaft and a housing, and a chamber formed by the housing is configured to accommodate the gas-liquid two-phase fluid medium. The sealing device further includes a labyrinth sealing mechanism and a fluid dynamic-pressure mechanical sealing mechanism with double end faces, where the labyrinth sealing mechanism and the fluid dynamic-pressure mechanical sealing mechanism with double end faces conduct mutual synergetic effect. Sealing buffer chambers are arranged between the labyrinth sealing mechanism and the fluid dynamic-pressure mechanical sealing mechanism; the fluid dynamic-pressure mechanical sealing mechanism is provided with stationary rings and movable rings, where the stationary rings and the movable rings oppositely abut against with each other.

Abstract: A device includes an isolation structure, a source/drain epi-layer, a contact, a first dielectric layer, and a second dielectric layer. The isolation structure is embedded in a substrate. The source/drain epi-layer is embedded in the substrate and is in contact with the isolation structure. The contact is over the source/drain epi-layer. The first dielectric layer wraps the contact. The second dielectric layer is between the contact and the first dielectric layer. The first and second dielectric layers include different materials, and a portion of the source/drain epi-layer is directly between a bottom portion of the second dielectric layer and a top portion of the isolation structure.

Abstract: Provided are variant adenosine deaminase 2 (ADA2) proteins, conjugates thereof and compositions containing the proteins and/or conjugates. Also provided are methods and uses of the ADA2 proteins or conjugates for treating diseases and conditions, such as a tumor or cancer, and in particular any disease or condition associated with elevated adenosine or other associated marker.

Abstract: The present invention relates to a personal care composition. In particular, the present invention relates to a personal care composition for blurring benefits. Accordingly, the present invention discloses a personal care composition comprising: a) titanium di-oxide; and b) 8 to 60% by weight of a cross-polymer comprising adipic acid and neopentyl glycol.

Abstract: A sensing device is provided. The sensing device includes a transistor, a disposable electrode, and a remote electrode. The transistor includes an extended gate, source and drain. The remote electrode is configured to receive a reference voltage. The disposable electrode is coupled between the transistor and the remote electrode. The disposable electrode includes a proximal end and a distal end. The proximal end of the disposable electrode is coupled to the extended gate of the transistor. The distal end of the disposable electrode is coupled to the remote electrode. The disposable electrode is adapted to load a cell and receive a membrane potential of the cell. The disposable electrode provides a gate voltage to the extended gate based on the change of the membrane potential and the reference voltage. The transistor provides different transistor currents at the drain based on the change of the gate voltage.

Abstract: A semiconductor device includes: a substrate comprising a magnetic tunneling junction (MTJ) region and a logic region, a MTJ on the MTJ region, a top electrode on the MTJ, a connecting structure on the top electrode, and a first metal interconnection on the logic region. Preferably, the first metal interconnection includes a via conductor on the substrate and a trench conductor, in which a bottom surface of the trench conductor is lower than a bottom surface of the connecting structure.

Abstract: A system and method for efficient methods and systems for input/output port protection from electrostatic discharge events are described. In various implementations, an integrated circuit mounted on a printed circuit board includes a connector port that uses a first signal pin within a metal shell mounted on the printed circuit board and is electrically connected to a ground reference. The first signal pin is electrically connected to the ground reference though a spring pin located between itself and the shell. A user inserts a head contact of a cable into the connector port. The head contact includes a second signal pin that is floating, but becomes connected to the ground reference when brought into physical contact with the first signal pin. During later insertion, the head contact pushes the spring pin causing physical disconnection of the spring pin from the first signal pin allowing data transmission to begin.

Abstract: A method of washing glassware is provided including: providing automatic dishwashing apparatus; providing soiled glassware; placing soiled glassware in automatic dishwashing apparatus; providing wash water; providing rinse water; selecting anhydrous mixed powder or mixed granule comprising: 2.5-5 wt % of oxidized maltodextrin, wherein oxidized maltodextrin has Degree of Oxidation of 0.4-1.7; 10-25 wt % of amino acid based builder; 20-75 wt % of additional builder, wherein additional builder includes at least one of sodium citrate, sodium carbonate and sodium percarbonate; 2.5-7.5 wt % of bleach activator; 0.5-10 wt % of nonionic surfactant; 0.

Abstract: A fluid quality tracing method includes obtaining pieces of fluid concentration distribution data of a detected region corresponding to detection time points respectively, generating pieces of concentration grid data respectively according to the pieces of fluid concentration distribution data, obtaining pieces of fluid moving data of the detected region corresponding to the detection time points respectively, obtaining estimated positions according to the fluid moving data and an initial position, and creating a fluid concentration trajectory according to the pieces of concentration grid data, the initial position and the estimated positions. The initial position and the estimated positions are located in the detected region. The fluid concentration trajectory includes line segments with terminals corresponding to the initial position and the estimated positions respectively, and the line segments indicate concentration representative values respectively.

Abstract: We describe a super-resolution optical microscopy technique in which a sample is located on or adjacent to the planar surface of an aplanatic solid immersion lens and placed in a cryogenic environment.

Abstract: A chip package and a method of fabricating the same are disclosed. The chip package includes a substrate with a first region, a second region surrounding the first region, and a third lane region surrounding the second region, a device layer disposed on the substrate, a via layer disposed on the device layer, an interconnect structure disposed on the via layer, and a stress buffer layer with tapered side profiles disposed on the interconnect structure. First and second portions of the via layer above the first and second regions include first and second set of vias. First, second, and third portions of the interconnect structure above the first, second, and third regions include conductive lines connected to the devices, a first set of dummy metal lines connected to the second set of vias, and a second set of dummy metal lines.

Abstract: A memory device comprises a source region, a drain region, a channel region, a gate dielectric layer, an MTJ stack, and a metal gate. The source region and the drain region are over a substrate. The channel region is between the source region and the drain region. The gate dielectric layer is over the channel region. The MTJ stack is over the gate dielectric layer. The MTJ stack comprises a first ferromagnetic layer, a second ferromagnetic layer with a switchable magnetization, and a tunnel barrier layer between the first and second ferromagnetic layers. The metal gate is over the MTJ stack.

Abstract: The present disclosure provides a method for automatically controlling material suction in a process of pulling-up of a monocrystal, including the steps of: obtaining a lifetime value and a resistivity of a pulled monocrystalline silicon rod; determining the lifetime value and a ratio of the lifetime value to the resistivity of the pulled monocrystalline silicon rod; if both the lifetime value and the ratio of the lifetime value to the resistivity are greater than set values, continuing to perform a re-feeding and pulling procedure; and if the lifetime value or/and the ratio of the lifetime value to the resistivity is less than or equal to the set values, performing a segment-taking and material suction procedure.