Patents by Inventor Lin Wang

Lin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230167491
    Abstract: Embodiments of the present disclosure, pertaining to the technical field of high-throughput sequencing, relate to a method for high-throughput sequencing based on an internal reference with a known index. The method includes: generating a random DNA sequence, adding a single-ended adapter DNA sequence containing the known index at both ends of the random DNA sequence to obtain an internal reference sequence, and synthesizing a sequencing quality control sequence based on the internal reference sequence; performing, based on the sequencing quality control sequence, high-throughput sequencing on a library of samples to be tested to obtain sequencing data; and performing result analysis on the sequencing data to obtain a sample error distribution rate of the library of samples to be tested, and ending the high-throughput sequencing. According to the present disclosure, index hopping in the process of sequencing may be monitored based on the internal reference.
    Type: Application
    Filed: April 13, 2022
    Publication date: June 1, 2023
    Inventors: XIWEN JIANG, Zhikun Liang, Lin Wang, Yilan Wu
  • Patent number: 11664744
    Abstract: An apparatus including a first member including a first electrode, a second member coupled to the first member about an axis, including a second electrode, and a surface layer between the first electrode and the second electrode, the second member is rotatable with respect to the axis by an energy flow to change triboelectric charges on the electrodes, and to affect a flow of electrons between the electrodes. A self-powered sensor for detecting a chemical including a generator having an electrode, and a superhydrophobic surface layer for receiving an energy flow carrying triboelectric charges, the surface layer includes a TiO2 layer with nanostructures, and a power indicator indicative of whether the chemical is present based on power output of the triboelectric generator, the energy flow is a solution flow, the solution comprising the chemical and water, and the chemical removes at least one triboelectric charge from the water.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: May 30, 2023
    Assignee: Georgia Tech Research Corporation
    Inventors: Zhong Lin Wang, Zong-Hong Lin, Gang Cheng
  • Patent number: 11665973
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack for forming a first MTJ; forming a first inter-metal dielectric (IMD) layer around the first MTJ; and performing a second patterning process to remove the first MTJ for forming a second MTJ and a third MTJ.
    Type: Grant
    Filed: May 3, 2022
    Date of Patent: May 30, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Po-Kai Hsu, Hung-Yueh Chen, Yu-Ping Wang
  • Publication number: 20230157931
    Abstract: The present invention relates to a personal care composition. In particular, the personal care composition is directed to providing enhanced skin appearance like improved blurring. The present invention provides a personal care composition comprising: a) a porous particle; and b) a crosspolymer comprising adipic acid and neopentyl glycol.
    Type: Application
    Filed: March 12, 2021
    Publication date: May 25, 2023
    Applicant: Conopco, Inc., d/b/a UNILEVER
    Inventors: Xiujuan CAO, Lin WANG
  • Patent number: 11659772
    Abstract: A method for forming a semiconductor structure includes the steps of providing a substrate having a device region and an alignment mark region, forming a first dielectric layer on the substrate and a second dielectric layer on the first dielectric layer, forming a conductive via in the second dielectric layer on the device region, forming a mask layer on the second dielectric layer, etching the second dielectric layer and the first dielectric layer through an opening of the mask layer on the alignment mark region to form a first trench through the second dielectric layer and an upper portion of the first dielectric layer and a plurality of second trenches in the first dielectric layer directly under the first trench. Afterward, a memory stack structure is formed on the second dielectric layer, covering the conductive via and filling into the first trench and the second trenches.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: May 23, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chia-Chang Hsu, Rai-Min Huang
  • Publication number: 20230149753
    Abstract: A foam production method includes mixing liquid nitrogen with a foaming material to produce foam. A gas is produced in situ from liquid nitrogen. As the ratio of the volume of the gas produced by gasification of liquid nitrogen to the volume of the liquid nitrogen is relatively high, when a large gas supply flow is needed to generate a large foam flow, a liquid nitrogen storage device of a small volume can be used instead of bulky air supply devices such as high-pressure gas cylinders, air compressors, air compressor sets and the like, reducing the volume of the air supply device. In addition, the liquid nitrogen used in foaming will release nitrogen gas after the foam blast, such that the nitrogen is also able to inhibit combustion on the surface of burning materials, accelerating the extinguishing of the fire.
    Type: Application
    Filed: January 19, 2023
    Publication date: May 18, 2023
    Applicants: CHINA PETROLEUM & CHEMICAL CORPORATION, CHINA PETROLEUM & CHEMICAL CORPORATION QINGDAO RESEARCH INSTITUTE OF SAFETY ENGINEERING
    Inventors: Shanjun MU, Chunming JIANG, Weihua ZHANG, Quanzhen LIU, Xuqing LANG, Xiaodong MU, Lin WANG, Jingfeng WU, Longmei TAN, Zuzheng SHANG, Rifeng ZHOU, Jianxiang LI, Hui YU
  • Publication number: 20230149102
    Abstract: An interventional surgical robotic system, control method, and medium are provided. The system includes a master-end mechanism and a slave-end mechanism. The master-end mechanism includes a processor, a display and a user control. The processor acquires an intra-operative image containing a physiological tubular structure, and generate an automatic navigation instruction by performing analysis processing on the intra-operative image. The user control receives manual manipulation of a user and transmit a manual control instruction corresponding to the manual manipulation. The slave mechanism receives instructions from the processor and the user control, and to steer the medical interventional device to advance based on the automatic navigation instruction in case the automatic navigation instruction is received without receiving the manual control instruction, and to steer the medical interventional device based on the manual control instruction in case the manual control instruction is received.
    Type: Application
    Filed: December 28, 2022
    Publication date: May 18, 2023
    Applicant: BEIJING WEMED MEDICAL EQUIPMENT CO.,LTD.
    Inventors: Tao HUANG, Lin WANG
  • Patent number: 11652321
    Abstract: A backplane connector includes a shielded design that has wafers with signal terminals supported as edge-coupled terminal pairs for differential signaling. A ground shield is mounted on each wafer and provides a U-channel that partially shields each terminal pair. An insert can be provided to help connect the ground shield to a U-shield to provide U-shaped shielding structure substantially the entire way from a tail to a contact.
    Type: Grant
    Filed: May 24, 2021
    Date of Patent: May 16, 2023
    Assignee: Molex, LLC
    Inventors: John C. Laurx, Chien-Lin Wang, Vivek Shah
  • Publication number: 20230146093
    Abstract: A CNS millbase dispersion, comprises a solvent and up to 0.5 wt % of at least one CNS-derived material dispersed in the millbase dispersion and selected from the group consisting of: carbon nanostructures, fragments of carbon nanostructures, fractured carbon nanotubes, and any combination thereof. The carbon nanostructures or fragments of carbon nanostructures include a plurality of multiwall carbon nanotubes that are crosslinked in a polymeric structure by being branched, interdigitated, entangled and/or sharing common walls, and the fractured carbon nanotubes are derived from the carbon nanostructures and are branched and share common walls with one another. A Brookfield viscosity of the dispersion measured at room temperature at 10 rpm is less than 3000 cP.
    Type: Application
    Filed: March 11, 2021
    Publication date: May 11, 2023
    Inventors: Zhangliang Gui, Jin-nan Liu, Shi-Lin Wang
  • Patent number: 11643482
    Abstract: A POSS modified polyacrylate fluorine-free waterproofing agent includes following components: 1-10 wt % of a functionalized POSS monomer, 2-20 wt % of methyl methacrylate, 3-26 wt % of butyl acrylate, 1-10 wt % of a long-chain acrylate monomer, 0.5-3.5 wt % of an initiator, 0.5-4 wt % of a reactive cationic emulsifier, and 50-80 wt % of deionized water. A method of preparing a POSS modified polyacrylate fluorine-free waterproofing agent is also disclosed.
    Type: Grant
    Filed: March 9, 2021
    Date of Patent: May 9, 2023
    Assignee: SHAANXI UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jianhua Zhou, Lin Wang, Yan Li, Xiaoyu Chen
  • Patent number: 11646069
    Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: May 9, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
  • Patent number: 11644554
    Abstract: There is provided a time of flight sensor including a light source, a first pixel, a second pixel and a processor. The first pixel generates a first output signal without receiving reflected light from an external object illuminated by the light source. The second pixel generates a second output signal by receiving the reflected light from the external object illuminated by the light source. The processor calculates deviation compensation and deviation correction associated with temperature variation according to the first output signal to accordingly calibrate a distance calculated according to the second output signal.
    Type: Grant
    Filed: July 23, 2020
    Date of Patent: May 9, 2023
    Assignee: PIXART IMAGING INC.
    Inventors: Tso-Sheng Tsai, Yueh-Lin Chung, Shin-Lin Wang
  • Patent number: 11647340
    Abstract: A vibration transducer for sensing vibrations includes a first flexible triboelectric member, a second flexible triboelectric member, a plurality of attachment points, a first electrode and a second electrode. The first flexible triboelectric member includes a first triboelectric layer and a material being on a first position on a triboelectric series. A conductive layer is deposited on the second side thereof. The second flexible triboelectric member includes a second triboelectric layer and a material being on a second position on the triboelectric series that is different from the first position on the triboelectric series. The second triboelectric member is adjacent to the first flexible triboelectric member. When the first triboelectric member comes into and out of contact with the second triboelectric member as a result of the vibrations, a triboelectric potential difference having a variable intensity corresponding to the vibrations can be sensed between the first and second triboelectric members.
    Type: Grant
    Filed: January 18, 2021
    Date of Patent: May 9, 2023
    Assignee: Georgia Tech Research Corporation
    Inventors: Nivedita Arora, Gregory D. Abowd, Mohit Gupta, Diego Osorio, Seyedeh Fereshteh Shahmiri, Thad Eugene Starner, Yi-Cheng Wang, Zhengjun Wang, Zhong Lin Wang, Steven L Zhang, Peter McAughan, Qiuyue Xue, Dhruva Bansal, Ryan Bahr, Emmanouil Tentzeris
  • Patent number: 11639355
    Abstract: Disclosed is a novel class of MDM2-p53 inhibitor compounds having an imidaxopyrolone structure, and specifically disclosed are compounds represented by formulas (I-1) and (I-2) and pharmaceutically acceptable salts thereof.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: May 2, 2023
    Assignees: LUOXIN PHARMACEUTICAL (SHANGHAI) CO., LTD., SHANDONG LUOXIN PHARMACEUTICAL GROUP STOCK CO., LTD., MEDSHINE DISCOVERY INC.
    Inventors: Kevin X Chen, Xiaobing Yan, Jianglei Huang, Yuekun Nie, Guoping Hu, Jian Li, Shuhui Chen, Jiaqiang Dong, Tie-Lin Wang
  • Publication number: 20230127319
    Abstract: An optical probe includes a cylindrical lens adapted to receive and transmit incident light. A light-emitting surface of the cylindrical lens is a curved end surface having a concentric ring-shaped diffractive microstructure. A working position of the optical probe is a position where a diffraction order is 1 when the incident light having a design wavelength between a first wavelength and a second wavelength passes through the diffractive microstructure. When passing through the cylindrical lens, the incident light having the first wavelength produces a diffraction effect with the diffractive microstructure and is converged at a first wavelength working position approximately the same as the working position of the optical probe with the diffraction order of 1. After being refracted by the curved end surface, the incident light having the second wavelength is converged at a second wavelength working position approximately the same as the working position of the optical probe.
    Type: Application
    Filed: December 20, 2021
    Publication date: April 27, 2023
    Applicant: Industrial Technology Research Institute
    Inventors: Chy-Lin Wang, Chi-Shen Chang, Yuan-Chin Lee
  • Patent number: 11637233
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a MRAM region of a substrate, forming a first inter-metal dielectric (IMD) layer around the MTJ, forming a patterned mask on a logic region of the substrate, performing a nitridation process to transform part of the first IMD layer to a nitride layer, forming a first metal interconnection on the logic region, forming a stop layer on the first IMD layer, forming a second IMD layer on the stop layer, and forming a second metal intercom in the second IMD layer to connect to the MTJ.
    Type: Grant
    Filed: November 1, 2020
    Date of Patent: April 25, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Si-Han Tsai, Che-Wei Chang, Po-Kai Hsu, Jing-Yin Jhang, Yu-Ping Wang, Ju-Chun Fan, Ching-Hua Hsu, Yi-Yu Lin, Hung-Yueh Chen
  • Patent number: 11634507
    Abstract: A method of producing dendritic gold nanoparticles by combining a gold precursor solution, a reducing agent, and a bifunctional peptide having an amine-rich amino acid sequence into a buffered aqueous solution in a single container, and agitating the mixture causing the formation of the dendritic gold nanoparticles having a surface with a positive charge and a second end portion of the bifunctional peptide exposed on the surface of the dendritic gold nanoparticles. The dendritic gold nanoparticles may be used to deliver therapeutic, diagnostic, and/or immunogenic amino acid sequences as portions of the bifunctional peptide.
    Type: Grant
    Filed: April 2, 2020
    Date of Patent: April 25, 2023
    Assignee: The Board of Regents of the University of Oklahoma
    Inventors: Chuanbin Mao, Lin Wang, Penghe Qiu
  • Publication number: 20230124633
    Abstract: A gas-sensitive material, a preparation method therefore and an application thereof, and a gas sensor using the gas-sensitive material are provided. The gas-sensitive material is a carbon material-metal oxide composite nanomaterial formed by compounding a carbon material and metal oxides. The content of the carbon material is 0.5˜20 wt. % and the content of the metal oxides is 80˜99.5 wt. %; the metal oxides contain tungsten oxide and one or more selected from tin oxide, iron oxide, titanium oxide, copper oxide, molybdenum oxide, and zinc oxide; the metal oxides are formed on the carbon material in the form of nanowires, and the nanowires are tungsten oxide-doped nanowires. The gas-sensitive material has reduced resistance, is capable of responding to various gases at a reduced working temperature.
    Type: Application
    Filed: January 26, 2021
    Publication date: April 20, 2023
    Inventors: Fei AN, Bing SUN, Na LI, Lin WANG, Ning SHI, Wei XU, Shucai ZHANG, Haozhi WANG, Shiqiang WANG, Junjie FENG, Chenyang ZHAO
  • Patent number: 11631803
    Abstract: A semiconductor device for internet of things (IoT) device includes a substrate having an array region defined thereon and a ring of dummy pattern surrounding the array region. Preferably, the ring of dummy pattern includes a plurality of magnetic tunneling junctions (MTJs) and a ring of metal interconnect pattern overlapping the MTJs and surrounding the array region. The semiconductor device further includes a gap between the array region and the ring of dummy pattern.
    Type: Grant
    Filed: December 27, 2020
    Date of Patent: April 18, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chun-Hsien Lin
  • Publication number: 20230110380
    Abstract: A semiconductor device includes a storage element on a substrate. The storage element has a tapered upper end structure. The tapered upper end structure includes a top electrode and a spacer surrounding the top electrode. A gap-fill dielectric layer is disposed around the spacer. A conductive cap layer covers the top electrode and the spacer. An inter-metal dielectric (IMD) layer is disposed on the conductive cap layer. A metal interconnection is disposed in the IMD layer and electrically connected to the top electrode through the conductive cap layer.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 13, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventor: Hui-Lin Wang