Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.

Abstract: A method for analyzing myocardial ischemia in resting electrocardiogram comprises establishing the database, grouping in a database, determining the threshold value for the group, processing the to-be-determined resting electrocardiogram, and determining the stenosis degree of the coronary artery.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, a top electrode is formed on the MTJ stack, the top electrode, the free layer, and the barrier layer are removed, a first cap layer is formed on the top electrode, the free layer, and the barrier layer, and the first cap layer and the pinned layer are removed to form a MTJ and a spacer adjacent to the MTJ.

Abstract: A semiconductor device includes a substrate comprising a MTJ region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region, and a contact plug on the logic region. Preferably, the MTJ includes a bottom electrode layer having a gradient concentration, a free layer on the bottom electrode layer, and a top electrode layer on the free layer.

Abstract: A method includes forming bottom conductive lines over a wafer. A first magnetic tunnel junction (MTJ) stack is formed over the bottom conductive lines. Middle conductive lines are formed over the first MTJ stack. A second MTJ stack is formed over the middle conductive lines. Top conductive lines are formed over the second MTJ stack.

Abstract: The present invention discloses a method for promoting methane production by anaerobic digestion in a high ammonia-nitrogen habitat using a biochar with a high carbon-to-nitrogen (C/N) ratio. In this method, a biochar material prepared by dry distillation and carbonization is added to municipal sludge for medium-temperature anaerobic digestion treatment, which increases the efficiency of methane production from sludge by anaerobic digestion in different ammonia-nitrogen stress habitats, thereby realizing the utilization of sludge as resources.

Abstract: A method includes forming a memory stack over a substrate. A dielectric layer is deposited to cover the memory stack. An opening is formed in the dielectric layer. The opening does not expose the memory stack. A spin-orbit-torque (SOT) layer is formed in the opening. A free layer is formed over the dielectric layer to interconnect the memory stack and the SOT layer.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: The present disclosure provides an integrated management and control system for a power plant including a power plant cloud edge vertical architecture system, which includes an inter-plant cloud platform, a plurality of intelligent control platforms, and a plurality of plant-side edge cloud platforms. Each intelligent control platform corresponds to one plant-side edge cloud platform and one power plant that are located in the corresponding power plant. The intelligent control platform is positively interconnected to the corresponding plant-side edge cloud platform via a forward isolation device, and the intelligent control platform is inversely interconnected to the corresponding plant-side edge cloud platform via a network switching device and a reverse isolation device. The plant-side edge cloud platform is bidirectionally interconnected to the inter-plant cloud platform over a private power network. The plant-side edge cloud platform is a reduced capacity private edge cloud system for a power plant.

Abstract: The present disclosure discloses a method and a system for performing check recovery based on Gaussian elimination, a apparatus, and a storage medium. The method includes: a disk array by using normal data blocks and normal check blocks is constructed, a first reference matrix constructed by using coding matrix rows corresponding to the normal data blocks and the normal check blocks is converted into an inverse matrix through Gaussian elimination; it is determined that coding matrix rows corresponding to a predetermined quantity of blocks, and a second reference matrix is constructed by using the coding matrix rows, the abnormal data blocks, and the abnormal check blocks; and the inverse matrix and the second reference matrix are multiplied to obtain a first matrix, the first matrix and the disk array are multiplied to obtain an output matrix, and original data are obtained according to the output matrix.

Abstract: A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a passivation layer on the first MTJ and the second MTJ, and an ultra low-k (ULK) dielectric layer on the passivation layer. Preferably, a top surface of the passivation layer between the first MTJ and the second MTJ is lower than a top surface of the passivation layer directly on top of the first MTJ.

Abstract: An optimization method for an implementation of mel-frequency cepstral coefficients is provided. The optimization method includes the following steps: performing a framing step, including using a 400×16 static random access memory to temporarily store a plurality of sampling points of a sound signal with overlap, and decomposing the sound signal into a plurality of frames. Each of the plurality of frames is 400 of the sampling points, there is an overlapping region between adjacent two of the plurality of frames, and the overlapping region includes 240 of the sampling points. The optimization method further includes performing a windowing step, which includes multiplying each of the plurality of frames by a window function in a bit-level design, and the optimization method includes performing a fast Fourier transform (FFT) step, which includes applying a 512 point FFT on a frame signal to obtain a corresponding frequency spectrum.

Abstract: A method of preparing epoxypropane by direct epoxidation of propylene includes the steps of contacting a mixed gas consisting of a reaction feed gas and a diluent gas with a catalyst to carry out reaction under reaction conditions of propylene epoxidation to prepare epoxypropane. The reaction feed gas contains propylene, oxygen gas and hydrogen gas while at least a portion of the diluent gas is a gaseous olefin. Using gaseous olefin as at least a portion of the diluent gas to perform propylene epoxidation that can significantly extend service life of the catalyst, effectively reduce the used amount of diluent gas, and improve the reaction selectivity and propylene conversion rate.

Abstract: A pill cutter is provided and has a base, two holders, a driving assembly, and a lid. The two holders are movably mounted on the base and configured to clamp one or multiple pills at the same time. The driving assembly is connected to the two holders and is capable of driving the two holders to move. The driving assembly comprises two wheels and the two wheels are connected to the two holders. The lid is tiltably mounted on the base, and a blade is mounted on the lid and configured to split the pill(s) at the same time. When the two wheels are rotated, the two holders are capable of moving toward each other or away from each other. With the holders driven by the wheels, multiple pills can be clamped by the holders and cut at once, which saves a lot of time.

Abstract: A method and system for preparing epoxypropane by direct epoxidation of propylene includes the steps of subjecting a mixed gas of a first feed gas and a second feed gas to a contact reaction with a catalyst under reaction conditions of propylene epoxidation to prepare epoxypropane. The first feed gas contains oxygen gas and is free or substantially free of hydrogen gas. The second feed gas contains hydrogen gas and is free or substantially free of oxygen gas. The first feed gas and/or the second feed gas contain propylene, at least one of the first feed gas and the second feed gas further contains a diluent gas. The method can be used for reducing dosage of diluent gas, preferably recycling the tail gas, thereby significantly increasing the conversion rate of propylene without compromising the service life of catalyst.

Abstract: A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.

Abstract: Disclosed a method of preparing composite particles comprising a non-porous spherical particulate inorganic material deposited on a plate-like inorganic material, where refractive index of said particulate inorganic material is greater than that of said plate-like inorganic particulate material, wherein, said spherical material occupies 20 to 80% of total surface area of said plate-like material and wherein the amount of said spherical material accounts for 2 to 20 wt % of said composite particles, further wherein said plate-like inorganic material is mica and said non-porous spherical particulate inorganic material is silicone dioxide, said method comprising the steps of: (iv) silanization of said plate-like inorganic material to get a silanized material having functional groups “A”; (v) silanization of said non-porous spherical particulate inorganic material to get a silanized material having functional groups “B”, where A?B; and where said “A” and said “B” are capable of reacting with each other such that

Abstract: A security device system including portions configured to have a combined state and a separated state. In the combined state, circuitry is configured to have an armed state and a not-armed state, and to trigger an alarm during a breach of the armed state. Depending on the embodiment, at least one of the portions, and in some embodiments more than one of the portions, participate in the armed and not-armed states. In some embodiments, the security device system includes an alarm device portion, a cradle portion, and a stratum portion.