Patents by Inventor Luigi Colombo

Luigi Colombo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160300775
    Abstract: A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.
    Type: Application
    Filed: June 16, 2016
    Publication date: October 13, 2016
    Inventors: Archana Venugopal, Marie Denison, Luigi Colombo, Sameer Pendharkar
  • Publication number: 20160293834
    Abstract: Described examples include graphene Hall sensors, magnetic sensor systems and methods for sensing a magnetic field using an adjustable gate voltage to adapt the Hall sensor magnetic field sensitivity according to a control input for environmental or process compensation and/or real-time adaptation for balancing power consumption and minimum detectable field performance. The graphene Hall sensor gate voltage can be modulated and the sensor output signal can be demodulated to combat flicker or other low frequency noise. Also, graphene Hall sensors can be provided with capacitive coupled contacts for reliable low impedance AC coupling to instrumentation amplifiers or other circuits using integral capacitance.
    Type: Application
    Filed: April 1, 2015
    Publication date: October 6, 2016
    Applicant: Texas Instruments Incorporated
    Inventors: Arup Polley, Archana Venugopal, Robert Reid Doering, Luigi Colombo
  • Patent number: 9397023
    Abstract: A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.
    Type: Grant
    Filed: September 28, 2014
    Date of Patent: July 19, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Archana Venugopal, Marie Denison, Luigi Colombo, Sameer Pendharkar
  • Publication number: 20160093551
    Abstract: A microelectronic device includes a heat spreader layer on an electrode of a component and a metal interconnect on the heat spreader layer. The heat spreader layer is disposed above a top surface of a substrate of the semiconductor device. The heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.
    Type: Application
    Filed: September 28, 2014
    Publication date: March 31, 2016
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Archana Venugopal, Marie Denison, Luigi Colombo, Sameer Pendharkar
  • Publication number: 20160093552
    Abstract: A microelectronic device includes semiconductor device with a component at a front surface of the semiconductor device and a backside heat spreader layer on a back surface of the semiconductor device. The backside heat spreader layer is 100 nanometers to 3 microns thick, has an in-plane thermal conductivity of at least 150 watts/meter-° K, and an electrical resistivity less than 100 micro-ohm-centimeters.
    Type: Application
    Filed: September 28, 2014
    Publication date: March 31, 2016
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Archana Venugopal, Marie Denison, Luigi Colombo, Hiep Nguyen, Darvin Edwards
  • Publication number: 20150307355
    Abstract: A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
    Type: Application
    Filed: July 6, 2015
    Publication date: October 29, 2015
    Inventors: James Cooper Wainerdi, Robert Reid Doering, Luigi Colombo
  • Publication number: 20150292112
    Abstract: A method of forming graphene single crystal domains on a carbon substrate is described.
    Type: Application
    Filed: April 15, 2014
    Publication date: October 15, 2015
    Applicant: Board of Regents, The University of Texas System
    Inventors: Luigi Colombo, Rodney S. Ruoff, Yufeng Hao
  • Patent number: 9114995
    Abstract: A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
    Type: Grant
    Filed: June 16, 2014
    Date of Patent: August 25, 2015
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: James Cooper Wainerdi, Robert Reid Doering, Luigi Colombo
  • Publication number: 20140291211
    Abstract: A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
    Type: Application
    Filed: June 16, 2014
    Publication date: October 2, 2014
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: James Cooper Wainerdi, Robert Reid Doering, Luigi Colombo
  • Patent number: 8800077
    Abstract: A pull down bed with automatic locking device has a movable framework, which constitutes a mattress frame, and is hinged to a container body, which constitutes a piece of furniture, so as to define a closed position, in which said mattress frame is substantially inside the piece of furniture, and an open position, for use as a bed, in which the mattress frame is in a horizontal position and rests on the ground by means of two feet. The mattress frame is hinged to the piece of furniture at one end and has its feet at the other end. The pull down bed includes a device for locking said mattress frame in the closed or horizontal position, which is actuated by an actuation device, which includes the feet.
    Type: Grant
    Filed: April 21, 2010
    Date of Patent: August 12, 2014
    Assignee: Clei S.R.L.
    Inventor: Luigi Colombo
  • Patent number: 8789705
    Abstract: A process of sorting metallic single wall carbon nanotubes (SWNTs) from semiconducting types by disposing the SWNTs in a dilute fluid, exposing the SWNTs to a dipole-inducing magnetic field which induces magnetic dipoles in the SWNTs so that a strength of a dipole depends on a conductivity of the SWNT containing the dipole, orienting the metallic SWNTs, and exposing the SWNTs to a magnetic field with a spatial gradient so that the oriented metallic SWNTs drift in the magnetic field gradient and thereby becomes spatially separated from the semiconducting SWNTs. An apparatus for the process of sorting SWNTs is disclosed.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: July 29, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: James Cooper Wainerdi, Robert Reid Doering, Luigi Colombo
  • Patent number: 8753924
    Abstract: An article of manufacture includes a semiconductor die (110) having an integrated circuit (105) on a first side of the die (110), a diffusion barrier (125) on a second side of the die (110) opposite the first side, a mat of carbon nanotubes (112) rooted to the diffusion barrier (125), a die attach adhesive (115) forming an integral mass with the mat (112) of the carbon nanotubes, and a die pad (120) adhering to the die attach adhesive and (115) and the mat (112) of carbon nanotubes for at least some thermal transfer between the die (110) and the die pad (120) via the carbon nanotubes (112). Other articles, integrated circuit devices, structures, and processes of manufacture, and assembly processes are also disclosed.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: June 17, 2014
    Assignee: Texas Instruments Incorporated
    Inventors: James Cooper Wainerdi, Luigi Colombo, John Paul Tellkamp, Robert Reid Doering
  • Patent number: 8575014
    Abstract: The invention provides a method for manufacturing a semiconductor device that comprises placing a metallic gate layer over a gate dielectric layer where the metallic gate layer has a crystallographic orientation, and re-orienting the crystallographic orientation of the metallic gate layer by subjecting the metallic gate layer to a hydrogen anneal.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: November 5, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Luigi Colombo, James J. Chambers, Mark R. Visokay
  • Publication number: 20130234313
    Abstract: An article of manufacture includes a semiconductor die (110) having an integrated circuit (105) on a first side of the die (110), a diffusion barrier (125) on a second side of the die (110) opposite the first side, a mat of carbon nanotubes (112) rooted to the diffusion barrier (125), a die attach adhesive (115) forming an integral mass with the mat (112) of the carbon nanotubes, and a die pad (120) adhering to the die attach adhesive and (115) and the mat (112) of carbon nanotubes for at least some thermal transfer between the die (110) and the die pad (120) via the carbon nanotubes (112). Other articles, integrated circuit devices, structures, and processes of manufacture, and assembly processes are also disclosed.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 12, 2013
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: James Cooper Wainerdi, Luigi Colombo, John Paul Tellkamp, Robert Reid Doering
  • Patent number: 8470400
    Abstract: Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.
    Type: Grant
    Filed: May 5, 2010
    Date of Patent: June 25, 2013
    Assignees: Board of Regents, The University of Texas System, Texas Instruments, Inc.
    Inventors: Luigi Colombo, Xuesong Li, Rodney S. Ruoff
  • Patent number: 8461028
    Abstract: A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
    Type: Grant
    Filed: October 8, 2012
    Date of Patent: June 11, 2013
    Assignee: Board of Regents, The University of Texas System
    Inventors: Luigi Colombo, Robert M. Wallace, Rodney S. Ruoff
  • Publication number: 20130019399
    Abstract: A pull-down bed assembly including a movable frame which constitutes the bedspring and is pivoted to a fixed frame so as to define a closed vertical position, in which the movable frame is substantially in a vertical position, and an open horizontal position, for use as a bed, in which the movable frame is in the horizontal position; the assembly has a balancing system, which is adapted to control the movement of the movable frame with respect to the fixed frame. The balancing system is constituted by springs with a respective transmission mechanism, which are arranged within the fixed frame and the movable frame and are not visible from the outside both in the closed position and in the open position of the movable frame.
    Type: Application
    Filed: April 11, 2011
    Publication date: January 24, 2013
    Applicant: CLEI S.R.L
    Inventor: Luigi Colombo
  • Patent number: 8309438
    Abstract: A method and semiconductor device for synthesizing graphene using ion implantation of carbon. Carbon is implanted in a metal using ion implantation. After the carbon is distributed in the metal, the metal is annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the surface of the metal. The metal/graphene surface is then transferred to a dielectric layer in such a manner that the graphene layer is placed on top of the dielectric layer. The metal layer is then removed. Alternatively, recessed regions are patterned and etched in a dielectric layer located on a substrate. Metal is later formed in these recessed regions. Carbon is then implanted into the metal using ion implantation. The metal may then be annealed and cooled in order to precipitate the carbon from the metal to form a layer of graphene on the metal's surface.
    Type: Grant
    Filed: February 16, 2010
    Date of Patent: November 13, 2012
    Assignees: Board of Regents, The University of Texas System, Texas Instruments, Inc.
    Inventors: Luigi Colombo, Robert M. Wallace, Rodney S. Ruoff
  • Publication number: 20120231590
    Abstract: A method of setting a work function of a filly silicided semiconductor device, and related device. At least some of the illustrative embodiments are methods comprising forming a gate stack over a semiconductor substrate (the gate stack comprising a dielectric layer, a suicide layer on the dielectric layer that defines a metal-dielectric layer interface, and a polysilicon layer on the suicide layer), depositing a metal layer over the gate stack, annealing to induce a reaction between the polysilicon layer and the metal layer, and delivering a work function-setting dopant to the metal-dielectric layer interface by way of the reaction.
    Type: Application
    Filed: May 18, 2012
    Publication date: September 13, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Luigi Colombo, Mark R. Visokay, James J. Chambers
  • Publication number: 20120184497
    Abstract: The invention provides dosage forms and compositions for treatment of bacterial infections. The dosage form may include a sterile, stable, particle-free dalbavancin powder suitable for reconstitution with a pharmaceutically acceptable vehicle. The dosage form may include a dalbavancin factor B0 and at least one additional dalbavancin factor among A0, A1, B1, B2, C0, and C1. The dosage form may also include a stabilizing substance.
    Type: Application
    Filed: March 23, 2012
    Publication date: July 19, 2012
    Inventors: Martin STOGNIEW, Luigi COLOMBO, Romeo CIABATTI