Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate and a quantum well stack disposed on the substrate. The quantum well stack may include a quantum well layer and a back gate, and the back gate may be disposed between the quantum well layer and the substrate.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a first gate above the quantum well stack, wherein the first gate includes a first gate metal and a first gate dielectric; and a second gate above the quantum well stack, wherein the second gate includes a second gate metal and a second gate dielectric, and the first gate is at least partially between a portion of the second gate and the quantum well stack.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a base and a fin extending away from the base and including a quantum well layer. The device may further include a first gate disposed on a first side of the fin and a second gate disposed on a second side of the fin, different from the first side. Providing gates on different sides of a fin advantageously allows increasing the number of quantum dots which may be independently formed and manipulated in the fin. The quantum dots formed in such a device may be constrained in the x-direction by the one or more gates, in the y-direction by the fin, and in the z-direction by the quantum well layer, as discussed in detail herein. Methods for fabricating such devices are also disclosed.

Abstract: Disclosed herein are quantum computing assemblies, as well as related computing devices and methods. For example, in some embodiments, a quantum computing assembly may include: a quantum device die to generate a plurality of qubits; a control circuitry die to control operation of the quantum device die; and a substrate; wherein the quantum device die and the control circuitry die are disposed on the substrate.

Abstract: Disclosed herein are quantum dot devices with single electron transistor (SET) detectors. In some embodiments, a quantum dot device may include: a quantum dot formation region; a group of gates disposed on the quantum dot formation region, wherein the group of gates includes at least first, second, and third gates, spacers are disposed on sides of the first and second gates, wherein a first spacer is disposed on a side of the first gate proximate to the second gate, and a second spacer, physically separate from the first spacer, is disposed on a side of the second gate proximate to the first gate, and the third gate is disposed between the first and second gates and extends between the first and second spacers; and a SET disposed on the quantum dot formation region, proximate to the group of gates.

Abstract: The present invention provides bivalent inhibitors of BET bromodomains, such as compounds of Formulae (I), (II), (III), (IV), (V), and (VI). Some bromodomain-containing proteins (e.g., BRD4) have a tandem bromodomain primary structure comprising more than one bromodomain binding site (e.g., BRD4 comprises BD1 and BD2). Bivalent inhibitors of BET bromodomains provided herein can target bromodomains through advantageous multivalent interactions, and can therefore can be to treat diseases or conditions associated with bromodomain-containing proteins. The present also provides pharmaceutical compositions and kits comprising the inventive compounds, as well as methods of using the inventive compounds.

Abstract: Enclosed structures, such as guard towers, are provided which are designed to be easily transportable, constructed easily onsite and erected in a manner which produces an exceptionally blast resistant structure that is also advantageously designed for positioning within a perimeter wall. In particular, in some embodiments, the guard towers have a pentagon shape and are comprised of a plurality of composite panels. Each panel is able to be constructed onsite. The panels typically have a rectangular shape with at least one half of the panel constructed as a solid composite of concrete and metal. Once the panels are constructed, the panels are erected and arranged in a pentagon shape. The panels are bolted together with the use of vertical face connections. These connections provide better structural integrity, retained over time, particularly after subjection to a blast. In addition, the pentagon shape provides improved safety when positioned along a perimeter wall.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a base and a fin extending away from the base and including a quantum well layer. The device may further include a first gate disposed on a first side of the fin and a second gate disposed on a second side of the fin, different from the first side. Providing gates on different sides of a fin advantageously allows increasing the number of quantum dots which may be independently formed and manipulated in the fin. The quantum dots formed in such a device may be constrained in the x-direction by the one or more gates, in the y-direction by the fin, and in the z-direction by the quantum well layer, as discussed in detail herein. Methods for fabricating such devices are also disclosed.

Abstract: Disclosed herein are quantum dot devices with single electron transistor (SET) detectors. In some embodiments, a quantum dot device may include: a quantum dot formation region; a group of gates disposed on the quantum dot formation region, wherein the group of gates includes at least first, second, and third gates, spacers are disposed on sides of the first and second gates, wherein a first spacer is disposed on a side of the first gate proximate to the second gate, and a second spacer, physically separate from the first spacer, is disposed on a side of the second gate proximate to the first gate, and the third gate is disposed between the first and second gates and extends between the first and second spacers; and a SET disposed on the quantum dot formation region, proximate to the group of gates.

Abstract: A Hardened Alternative Trailer System (HATS) is described, including methods of producing same. HATS has superior blast, ballistic and forced entry protection properties, relative to existing structures, due to particular features of frame design and construction methods. Furthermore, HATS is a low-cost reinforced ISO container suitable for field and/or remote fabrication and meets blast, ballistic/projectile and/or forced entry threats such as the U.S. Department of State Certification Standard SD-STD-01.01, Revision G.

Abstract: A bracket for securing a panel is provided, the bracket including a panel contact member including an interface portion. Also provided are a first clamp member having a first clamp surface contact portion and a first clamp adjustable portion operable to interface with the panel contact member interface portion and a second clamp member having a second clamp surface contact portion positioned such that it is facing toward the first clamp surface contact portion of the first clamp when the first clamp adjustable portion is interfacing with the panel contact member interface portion, such that the first and second clamp surface contact portions are facing inward towards each other. A securing member is operable to secure the first clamp member to the panel contact member, the securing member positioned substantially perpendicular to the first and second clamp surface contact portions.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include a (111) silicon substrate, a (111) germanium quantum well layer above the substrate, and a plurality of gates above the quantum well layer. In some embodiments, a quantum dot device may include a silicon substrate, an insulating material above the silicon substrate, a quantum well layer above the insulating material, and a plurality of gates above the quantum well layer.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a plurality of gates disposed on the quantum well stack; and a top gate at least partially disposed on the plurality of gates such that the plurality of gates are at least partially disposed between the top gate and the quantum well stack.

Abstract: Described herein are fibers, nonwoven fabrics, and other nonwoven articles comprising a blend of at least one propylene-based elastomer and a broad molecular weight polypropylene or a broad molecular weight impact copolymer. The broad molecular weight polypropylene has a molecular weight distribution (MWD) of greater than 4.5. The impact copolymer is a reactor blend and comprises a propylene homopolymer component and a copolymer component, where the propylene homopolymer component has a molecular weight distribution (MWD) of greater than 4.5.

Abstract: Disclosed herein are quantum dot devices with trenched substrates, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate having a trench disposed therein, wherein a bottom of the trench is provided by a first material, and a quantum well stack at least partially disposed in the trench. A material of the quantum well stack may be in contact with the bottom of the trench, and the material of the quantum well stack may be different from the first material.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer and a barrier layer; a first gate metal above the quantum well stack, wherein the barrier layer is between the first gate metal and the quantum well layer; and a second gate metal above the quantum well stack, wherein the barrier layer is between the second gate metal and the quantum well layer, and a material structure of the second gate metal is different from a material structure of the first gate metal.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a plurality of gates disposed on the quantum well stack; and a top gate at least partially disposed on the plurality of gates such that the plurality of gates are at least partially disposed between the top gate and the quantum well stack.

Abstract: Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack structure of a quantum dot device, wherein the quantum well stack structure includes an insulating material to define multiple rows of quantum dot formation regions; and a gate that extends over multiple ones of the rows.

Abstract: A new and distinct variety of nectarine tree (Prunus persica nucipersica), which is denominated varietally as ‘Wanectsix’, and which produces an attractively colored yellow-fleshed, large sized, low acid, clingstone nectarines which is mature for harvesting and shipment approximately July 20 to July 30 under the ecological conditions prevailing in the San Joaquin Valley of central California.