Abstract: A barrel elevator system for vertically moving barrels of liquid between a ground floor and any one of a number of floors at a warehouse for storage of the barrels. The barrel elevator system includes a support frame located in an elevator shaft and a series of cradle assemblies supported between a pair of lifting chains. A loading station is located on the ground floor for receiving barrels to be stored or for removing barrels after storage. Each floor includes a unloading station that allows barrels to be removed from the cradle for storage and returned to the cradles after storage. Each of the loading and unloading stations includes a shield assembly to restrict access to the elevator shaft. A rail section and handle are used to load and unload barrels from the cradles. The handle extends through the shield assembly for access by an operator.

Abstract: An optical device is disclosed, including a phase delay, a first adiabatic coupler adapted to receive an input signal and adapted to be optically coupled to an input of the phase delay, and a second adiabatic coupler adapted to be optically coupled to an output of the phase delay. The second adiabatic coupler includes a first waveguide including a first portion optically coupled to the first output and including a first width, and a second waveguide including a second portion optically coupled to the second output and including a second width that is approximately equal to the first width.

Abstract: A thermo-optic phase shifter comprises an optical waveguide comprising a P-type region comprising a first contact, an N-type region comprising a second contact, and a waveguide region disposed between the P-type region and the N-type region and having a raised portion. The thermo-optic phase shifter further comprises one or more heating elements. The one or more heating elements include one or more discrete resistive heating elements or the P-type and N-type regions driven as resistive heating elements.

Abstract: Aspects described herein include a method comprising bonding a photonic wafer with an electronic wafer to form a wafer assembly, removing a substrate of the wafer assembly to expose a surface of the photonic wafer or of the electronic wafer, forming electrical connections between metal layers of the photonic wafer and metal layers of the electronic wafer, and adding an interposer wafer to the wafer assembly by bonding the interposer wafer with the wafer assembly at the exposed surface. The interposer wafer comprises through-vias that are electrically coupled with the metal layers of one or both of the photonic wafer and the electronic wafer. The method further comprises dicing the wafer assembly to form a plurality of dies. A respective edge coupler of each die is optically exposed at an interface formed by the dicing.

Abstract: Aspects described herein include an optical apparatus comprising an input port configured to receive an optical signal comprising a plurality of wavelengths, and a plurality of output ports. Each output port is configured to output a respective wavelength of the plurality of wavelengths. The optical apparatus further comprises a first plurality of two-mode Bragg gratings in a cascaded arrangement. Each grating of the first plurality of two-mode Bragg gratings is configured to reflect a respective wavelength of the plurality of wavelengths toward a respective output port of the plurality of output ports, and transmit any remaining wavelengths of the plurality of wavelengths.

Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Abstract: Aspects described herein include an optical apparatus comprising a multiple-stage arrangement of two-mode Bragg gratings comprising: at least a first Bragg grating of a first stage. The first Bragg grating is configured to transmit a first two wavelengths and to reflect a second two wavelengths of a received optical signal. The optical apparatus further comprises a second Bragg grating of a second stage. The second Bragg grating is configured to transmit one of the first two wavelengths and to reflect an other of the first two wavelengths. The optical apparatus further comprises a third Bragg grating of the second stage. The third Bragg grating is configured to transmit one of the second two wavelengths and to reflect an other of the second two wavelengths.

Abstract: An optical device is disclosed, including a phase delay, a first adiabatic coupler adapted to receive an input signal and adapted to be optically coupled to an input of the phase delay, and a second adiabatic coupler adapted to be optically coupled to an output of the phase delay. The second adiabatic coupler includes a first waveguide including a first portion optically coupled to the first output and including a first width, and a second waveguide including a second portion optically coupled to the second output and comprising a second width that is approximately equal to the first width.

Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Abstract: Aspects described herein include an optical apparatus comprising at least a first Bragg grating of a first stage. The first Bragg grating is configured to transmit a first two wavelengths and to reflect a second two wavelengths of a received optical signal. The optical apparatus further comprises a second Bragg grating of a second stage. The second Bragg grating is configured to transmit one of the first two wavelengths and to reflect the other of the first two wavelengths. The optical apparatus further comprises a third Bragg grating of the second stage. The third Bragg grating is configured to transmit one of the second two wavelengths and to reflect the other of the second two wavelengths.

Abstract: Aspects described herein include an optical apparatus comprising at least a first Bragg grating of a first stage. The first Bragg grating is configured to transmit a first two wavelengths and to reflect a second two wavelengths of a received optical signal. The optical apparatus further comprises a second Bragg grating of a second stage. The second Bragg grating is configured to transmit one of the first two wavelengths and to reflect the other of the first two wavelengths. The optical apparatus further comprises a third Bragg grating of the second stage. The third Bragg grating is configured to transmit one of the second two wavelengths and to reflect the other of the second two wavelengths.

Abstract: Embodiments provide for an optical modulator that includes a first silicon region, a polycrystalline silicon region; a gate oxide region joining the first silicon region to a first side of the polycrystalline region; and a second silicon region formed on a second side of the polycrystalline silicon region opposite to the first side, thereby defining an active region of an optical modulator between the first silicon region, the polycrystalline region, the gate oxide region, and the second silicon region. The polycrystalline silicon region may be between 0 and 60 nanometers thick, and may be formed or patterned to the desired thickness. The second silicon region may be epitaxially grown from the polycrystalline silicon region and patterned into a desired cross sectional shape separately from or in combination with the polycrystalline silicon region.

Abstract: An optical apparatus comprises a semiconductor substrate and an optical waveguide emitter. The optical waveguide emitter comprises an input waveguide section extending from a facet of the semiconductor substrate, a turning waveguide section optically coupled with the input waveguide section, and an output waveguide section extending to the same facet and optically coupled with the turning waveguide section. One or more of the input waveguide section, the turning waveguide section, and the output waveguide section comprises an optically active region.

Abstract: A vertical reciprocating conveyor that can be transported in a storage condition and assembled at a work facility in an operating condition. The vertical reciprocating conveyor includes a carriage assembly that is movable along a pair of spaced vertical rails of a support frame. The carriage assembly includes a pair of spaced uprights and a carriage deck designed to support material moved along the pair of spaced vertical rails of the support frame. The carriage deck is movable between an operating condition and a storage condition, where the carriage deck is perpendicular to the pair of spaced uprights in the operating condition and parallel to the pair of spaced uprights in the storage condition. The movement of the carriage deck allows the overall size of the vertical reciprocating conveyor to be reduced for shipping.

Abstract: Embodiments disclosed herein generally relate to optical coupling between a highly-confined waveguide region and a low confined waveguide region in an optical device. The low confined waveguide region includes a trench in a substrate of the optical device in order to provide additional dielectric layer thickness for insulation between the substrate of the optical device and waveguides for light signals having a low optical mode. The low confined waveguide region is coupled to the highly-confined waveguide region via a waveguide overlap and in some embodiments via an intermediary coupling waveguide.

Abstract: Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.

Abstract: An optical modulator may include a lower waveguide, an upper waveguide, and a dielectric layer disposed therebetween. When a voltage potential is created between the lower and upper waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) guide that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. In one embodiment, at least one of the waveguides includes a respective ridge portion aligned at a charge modulation region which may aid in confining the optical mode laterally (e.g., in the width direction) in the optical modulator. In another embodiment, ridge portions may be formed on both the lower and the upper waveguides. These ridge portions may be aligned in a vertical direction (e.g., a thickness direction) so that ridges overlap which may further improve optical efficiency by centering an optical mode in the charge modulation region.

Abstract: Embodiments of dual mode communication systems and methods are disclosed. On system embodiment, among others, comprises logic configured to perform spatial multiplexing and expanded bandwidth signaling to data.

Abstract: Improvements in extinguishing optical signals in silicon photonics may be achieved by supplying a test signal of a known characteristics to a Photonic Element (PE) to extinguish the test signal via a first phase shifter and intensity modulator on a first arm of the PE and a second phase shifter and intensity modulator on a second arm of the PE; sweeping through a plurality of voltages at the first intensity modulator to identify a first voltage that is associated with an extinction ratio at an output of the PE that satisfies an induced loss threshold and a second voltage that is associated with an induced loss in the test signal at the output of the PE that satisfies an extinction ratio threshold; and setting the PE to provide an operational voltage to the first intensity modulator based on the first voltage and the second voltage.

Abstract: The embodiments herein describe a single-frequency laser source (e.g., a distributed feedback (DFB) laser or distributed Bragg reflector (DBR) laser) that includes a feedback grating or mirror that extends along a waveguide. The grating may be disposed over a portion of the waveguide in an optical gain region in the laser source. Instead of the waveguide or cavity being linear, the laser includes a U-turn region so that two ends of the waveguide terminate at the same facet. That facet is coated with an anti-reflective (AR) coating.