Abstract: In a dynamic random access memory unit, a parity check logic circuit includes a parity signal generating circuit which generates a parity signal for each signal group transmitted on the input/output data bus. For a sequence of data groups on the data bus, a parity signal for each data group is generated, the parity signal combined with a parity signal generated for the previous data group or data groups. For a read operations, a parity signal is generated for each of sequence of retrieved data groups and combined with the parity signal(s) of the previous data groups of the sequence. The resulting parity signal is compared with the parity signal associated with the data group sequence and stored in the memory unit to generate a flag signal when the parity signals are not identical. For a write operation, the resulting parity signal for all the data groups is stored in memory unit at a location associated with the sequence of data groups.

Abstract: In a dynamic random access memory unit, the voltage difference between bitline pairs, resulting from the transfer of charge between the bitline pair and a memory array (5.sub.L), is amplified by an associated sense amplifier unit (10.sub.L). A multiplicity of sense amplifier units (10.sub.1 -10.sub.M) are activated by a sense amplifier driver circuit. (16, 18, 15 and 17) in typical operation. During a first period of time, a first transistor circuit (15 and 17) of the sense amplifier driver unit capable of providing a limited amount of charging current, activates the sense amplifier units (10.sub.1 -10.sub.M). During a second period of time, the first transistor unit (15 and 17) and a second larger transistor unit (16, 18) activate the sense amplifier units. In order to provide a more effective activation during the first period, function of the first transistor circuit (15, 17) is performed by a plurality of transistor circuits (15.sub.1 -15.sub.L, 17.sub.1 -17.sub.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and ouput data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: An oxaspiro ?2,5!octane derivative of the formula: ##STR1## useful in inhibiting angiogenesis in solid tumors.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is desclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof as permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: Oxaspiro?2,5! octanes of the formula ##STR1## inhibit angiogenesis and are particularly suitable for the treatment of solid tumors. In preferred embodiments, R.sup.1 is a carbamoyl derivative, R.sup.2 is an alkoxy substituent and R.sup.3 is ##STR2## Pharmaceutical salts of these compounds, such as methyl, amonium and organic amine salts also exhibit desirable properties.

Abstract: In a dynamic random access memory device, the time required for implementation of memory cell data retention time testing procedures can be reduced by changing the voltage level(s) applied to the components of the storage cell when compared to the voltages applied during the typical memory cell operation. By changing the voltage(s) applied to the components, the difference in the bitlines detected by the sense amplifier will be reduced. Because to the reduced bitline voltage difference, the decay of the charge on the storage cell causes a reduction in the data retention time. The data retention time is reduced in manner related to the typical memory cell operation. The altered voltage(s) can be applied to the storage cell bitlines and/or to the storage cell dummy capacitances.

Abstract: In a dynamic random access memory device, the time required for implementation of memory cell data retention time testing procedures can be reduced by changing the voltage level(s) applied to the components of the storage cell when compared to the voltages applied during the typical memory cell operation. By changing the voltage(s) applied to the components, the difference in the bitlines detected by the sense amplifier will be reduced. Because to the reduced bitline voltage difference, the decay of the charge on the storage cell causes a reduction in the data retention time. The data retention time is reduced in manner related to the typical memory cell operation. The altered voltage(s) can be applied to the storage cell bitlines and/or to the storage cell dummy capacitances.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36), which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data parts (22) thereof to permit asynchronous read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disclosed. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A memory circuit 14 is provided having a data register (20) coupled to the output of the memory cell array (16). The output of the data register (20) may be selectively output, allowing a plurality of memory circuits (14) to be tested in parallel with a substantial increase in efficiency. Furthermore, test data can be written to the memory cell arrays (14) while previous test data is read from the memory circuits for optimum efficiency.

Abstract: In a dynamic random access memory unit, the leakage current from a non-selected charged storage cell capacitor (320-324; 325-329) through the pass transistor (310-314; 315-319) to a zero voltage bitline (31, 32) is reduced by first isolating the bitline pair (31, 32) from the sense amplifier unit (35). The voltage of the zero voltage bitline (31, 32) is then increased so that the bitline (31, 32) is at a slightly higher potential than the gate terminal of the pass transistor (310, 314; 315-319). This voltage difference results in a large reduction of leakage current. In the preferred embodiment, a coupling transistor (304) is positioned between the bitline pair (31, 32). After the bitline pair (31, 32) is isolated from the associated sense amplifier unit 35, a small voltage is applied to the gate terminal of the coupling transistor (304).

Abstract: Peptide compounds of the formula (I') ##STR1## in which R.sup.1 is acyl,R.sup.2 is lower alkyl, cyclo(lower)alkyl(lower)alkyl or optionally substituted heterocyclic(lower)alkyl,R.sup.3 is optionally substituted heterocyclic(lower)alkyl or optionally substituted ar(lower)alkyl,R.sup.4 is lower alkyl, amino(lower)alkyl, protected amino(lower)alkyl, carboxy(lower)alkyl, protected carboxy(lower)alkyl or optionally substituted heterocyclic(lower)alkyl,R.sup.5 is carboxy, protected carboxy, carboxy(lower)alkyl or protected carboxy(lower)alkyl,R.sup.6 is hydrogen, lower alkyl, C.sub.6-10 ar(lower)alkyl amino(lower)alkyl, protected amino(lower)alkyl, carboxy(lower)alkyl, protected carboxy(lower)alkyl, or heterocyclic(lower)alkyl,R.sup.7 is hydrogen or lower alkyl, andA is --O--, --NH--, lower alkylimino or lower alkylene, or a pharmaceutically acceptable salt thereof are disclosed. The compounds can be used to treat and prevent endothelin mediated diseases such as hypertension.

Abstract: A video data processing system (10) has a first substrate (12) and a second substrate (14). A system decoder (16), input buffer (18) and parser (20) are formed on first substrate (12). The parser (20) retrieves video data information from an input data stream and feeds coefficients through a dequantization unit (22) and a transformation unit (24). In addition, motion vector information is output from the parser (20). The second substrate (14) comprises a plurality of picture frame buffers 38, 40 and 44. The frame buffers 38, 40 and 44 are used to store decoded video information. Motion compensation modules 26a and 26b are used to perform predicted calculations on the information received from the video data stream as well as other images that have already been decoded. A raster scan output buffer (46) is used to output the decoded video information.

Abstract: A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disabled. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).

Abstract: A video data processing system (10) has a first substrate (12) and a second substrate (14). A system decoder (16), input buffer (18) and parser (20) are formed on first substrate (12). The parser (20) retrieves video data information from an input data stream and feeds coefficients through a dequantization unit (22) and a transformation unit (24). In addition, motion vector information is output from the parser (20). The second substrate (14) comprises a plurality of picture frame buffers 38, 40 and 44. The frame buffers 38, 40 and 44 are used to store decoded video information. Motion compensation modules 26a and 26b are used to perform predicted calculations on the information received from the video data stream as well as other images that have already been decoded. A raster scan output buffer (46) is used to output the decoded video information.