Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes, as well as the resulting SOI substrate. In some embodiments, an amorphous silicon layer is deposited on a high-resistivity substrate. A rapid thermal anneal (RTA) is performed to crystallize the amorphous silicon layer into a trap-rich layer of polysilicon in which a majority of grains are equiaxed. An insulating layer is formed over the trap-rich layer. A device layer is formed over the insulating layer and comprises a semiconductor material. Equiaxed grains are smaller than other grains (e.g., columnar grains). Since a majority of grains in the trap-rich layer are equiaxed, the trap-rich layer has a high grain boundary area and a high density of carrier traps. The high density of carrier traps may, for example, reduce the effects of parasitic surface conduction (PSC).

Abstract: A composite semiconductor substrate includes a semiconductor substrate, an oxygen-doped crystalline semiconductor layer and an insulative layer. The oxygen-doped crystalline semiconductor layer is over the semiconductor substrate, and the oxygen-doped crystalline semiconductor layer includes a crystalline semiconductor material and a plurality of oxygen dopants. The insulative layer is over the oxygen-doped crystalline semiconductor layer.

Abstract: Various embodiments of the present application are directed to a method for forming a thin semiconductor-on-insulator (SOI) substrate at low cost and with low total thickness variation (TTV). In some embodiments, an etch stop layer is epitaxially formed on a sacrificial substrate. A device layer is epitaxially formed on the etch stop layer and has a different crystalline lattice than the etch stop layer. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the etch stop layer are between the sacrificial and handle substrates. The sacrificial substrate is removed. An etch is performed into the etch stop layer to remove the etch stop layer. The etch is performed using an etchant comprising hydrofluoric acid, hydrogen peroxide, and acetic acid.

Abstract: An image sensor device is disclosed. The image sensor device includes: a substrate having a front surface and a back surface; a radiation-sensing region formed in the substrate; an opening extending from the back surface of the substrate into the substrate; a first metal oxide film including a first metal, the first metal oxide film being formed on an interior surface of the opening; and a second metal oxide film including a second metal, the second metal oxide film being formed over the first metal oxide film; wherein the electronegativity of the first metal is greater than the electronegativity of the second metal. An associated fabricating method is also disclosed.

Abstract: An image sensor device is disclosed. The image sensor device includes: a substrate having a front surface and a back surface; a radiation-sensing region formed in the substrate; an opening extending from the back surface of the substrate into the substrate; a first metal oxide film including a first metal, the first metal oxide film being formed on an interior surface of the opening; and a second metal oxide film including a second metal, the second metal oxide film being formed over the first metal oxide film; wherein the electronegativity of the first metal is greater than the electronegativity of the second metal. An associated fabricating method is also disclosed.

Abstract: A method for forming a deep trench structure is provided. The method includes forming a first recess in a top portion of a substrate and forming a first protective layer on sidewalls of the first recess. The method includes etching a middle portion of the substrate by using the first protective layer as a mask to form a second recess and forming a second protective layer on sidewalls of the second recess. The method also includes etching a bottom portion of the substrate by using the second protective layer as a mask to form a third recess; and removing the first protective layer and the second protective layer to form a deep trench structure. The deep trench structure is constructed by the first recess, the second recess and the third recess, and the deep trench structure has a stair shape.

Abstract: The present disclosure provides a semiconductor structure, including a first semiconductor device having a first surface and a second surface, the second surface being opposite to the first surface, a semiconductor substrate over the first surface of the first semiconductor device, and a III-V etch stop layer in contact with the second surface of the first semiconductor device. The present disclosure also provides a manufacturing method of a semiconductor structure, including providing a temporary substrate having a first surface, forming a III-V etch stop layer over the first surface, forming a first semiconductor device over the III-V etch to stop layer, and removing the temporary substrate by an etching operation and exposing a surface of the III-V etch stop layer.

Abstract: A method for forming a deep trench structure is provided. The method includes forming a first recess in a top portion of a substrate and forming a first protective layer on sidewalls of the first recess. The method includes etching a middle portion of the substrate by using the first protective layer as a mask to form a second recess and forming a second protective layer on sidewalls of the second recess. The method also includes etching a bottom portion of the substrate by using the second protective layer as a mask to form a third recess; and removing the first protective layer and the second protective layer to form a deep trench structure. The deep trench structure is constructed by the first recess, the second recess and the third recess, and the deep trench structure has a stair shape.

Abstract: A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.

Abstract: An image sensor device is disclosed. The image sensor device includes: a substrate having a front surface and a back surface; a radiation-sensing region formed in the substrate; an opening extending from the back surface of the substrate into the substrate; a first metal oxide film including a first metal, the first metal oxide film being formed on an interior surface of the opening; and a second metal oxide film including a second metal, the second metal oxide film being formed over the first metal oxide film; wherein the electronegativity of the first metal is greater than the electronegativity of the second metal. An associated fabricating method is also disclosed.

Abstract: The disclosure provides a recipe for in-situ gel, formed by dissolving at least one polymer and at least one gel prevention agent in a polar solvent to form a solution and placing the solution in a condition for in-situ forming gels. The disclosure also provides an implant and a drug delivery system formed by the recipe.

Abstract: A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.

Abstract: The present disclosure provides a semiconductor structure, including a first semiconductor device having a first surface and a second surface, the second surface being opposite to the first surface, a semiconductor substrate over the first surface of the, first semiconductor device, and a III-V etch stop layer in contact with the second surface of the first semiconductor device. The present disclosure also provides a manufacturing method of a semiconductor structure, including providing a temporary substrate having a first surface, forming a III-V etch stop layer over the first surface, forming a first semiconductor device over the etch stop layer, and removing the temporary substrate by an etching operation and exposing a surface of the III-V etch stop layer.

Abstract: A method includes performing an anisotropic etching on a semiconductor substrate to form a trench. The trench has vertical sidewalls and a rounded bottom connected to the vertical sidewalls. A damage removal step is performed to remove a surface layer of the semiconductor substrate, with the surface layer exposed to the trench. The rounded bottom of the trench is etched to form a slant straight bottom surface. The trench is filled to form a trench isolation region in the trench.

Abstract: The disclosure provides a biomedical composition, including: a hyaluronic acid; a modified histidine; and a polymer or C4-C20 alkane, wherein the modified histidine and the polymer or C4-C20 alkane are grafted to at least one primary hydroxyl group of the hyaluronic acid to allow the hyaluronic acid to form a hyaluronic acid derivative, wherein a graft ratio of the modified histidine is about 1-100%, and a graft ratio of the polymer or C4-C20 alkane is about 0-40%.

Abstract: The disclosure provides a pharmaceutical composition. The pharmaceutical composition includes a chitosan with palmitoyl groups and an active agent. According to another embodiment, the pharmaceutical composition can further include a gelling accelerating agent. According to an embodiment of the disclosure, the active agent of the disclosure can be administered in the form of a nano-drug, liposome, micelle, or microparticle.

Abstract: A sustained release composition comprising a polymer and manufacturing method thereof. The sustained release composition comprises a polymer, a bioactive agent, and a release rate determined agent, wherein the release rate determined agent is dispersed in the sustained release composition to control the release rate of the bioactive agent. The method comprises providing an oil phase comprising a bioactive agent, a polymer, and a release rate determined agent; providing an aqueous phase comprising a surfactant; mixing the oil phase with the aqueous phase to form the sustained release composition having a controlled release effect.

Abstract: A stationary exercise apparatus includes a frame, a driving wheel assembly, two treading units, and a flywheel assembly. The flywheel assembly has a driven wheel. The driven wheel and the driving wheel assembly are positioned coaxially and pivotally. The treading units are arranged in a four-link manner and can actuate the driving wheel assembly. The driving wheel assembly drives the driven wheel to rotate at an inertial operating speed higher than the rotation speed of the driving wheel assembly. After being actuated, the stationary exercise apparatus operates continuously because of inertial rotation of the driven wheel. During their operation, pedals of the treading units keep lying on the same horizontal plane to thereby enable the user to tread smoothly and lower the prevalence of sports injuries.

Abstract: The disclosure provides a biomedical composition, including: a hyaluronic acid; a modified histidine; and a polymer or C4-C20 alkane, wherein the modified histidine and the polymer or C4-C20 alkane are grafted to at least one primary hydroxyl group of the hyaluronic acid to allow the hyaluronic acid to form a hyaluronic acid derivative, wherein a graft ratio of the modified histidine is about 1-100%, and a graft ratio of the polymer or C4-C20 alkane is about 0-40%.

Abstract: The disclosure provides a recipe for in-situ gel, formed by dissolving at least one polymer and at least one gel prevention agent in a polar solvent to form a solution and placing the solution in a condition for in-situ forming gels. The disclosure also provides an implant and a drug delivery system formed by the recipe.