Abstract: In one method, the current block is partitioned into multiple final sub-blocks using one or more stages of sub-tree partition comprising ternary tree partition and at least one other-type partition, where ternary partition tree is excluded from the sub-tree partition if a current sub-tree depth associated with a current sub-block is greater than a first threshold and the first threshold is an integer greater than or equal to 1. In another method, if a test condition is satisfied, the current block is encoded or decoded using a current Inter mode selected from a modified group of Inter tools, where the modified group of Inter tools is derived from an initial group of Inter tools by removing one or more first Inter tools from the initial group of Inter tools, replacing one or more second Inter tools with one or more complexity-reduced Inter tools, or both.

Abstract: Embodiments of the present disclosure provide a display substrate motherboard and a manufacturing method and a cutting method thereof, a display substrate and a display device. The display substrate motherboard includes a preset cutting position, a back film and an adhesive layer disposed on the back film, the adhesive layer includes: a first adhesive layer corresponding to the preset cutting position; a second adhesive layer disposed on two sides of the first adhesive layer in a direction parallel to the back film; and a first light blocking layer disposed between the first adhesive layer and the second adhesive layer, wherein the first light blocking layer is configured to reduce light entering the second adhesive layer through the first light blocking layer after being incident from the first adhesive layer.

Abstract: A semiconductor device including: a first formation site and a second formation site for forming a first conductive bump and a second conductive bump; when a first environmental density corresponding to the first formation site is greater than a second environmental density corresponding to the second formation site, a cross sectional area of the second formation site is greater than a cross sectional area of the first formation site; wherein the first environmental density is determined by a number of formation sites around the first formation site in a predetermined range and the second environmental density is determined by a number of formation sites around the second formation site in the predetermined range; wherein a first area having the first environmental density forms an ellipse layout while a second area having the second environmental density forms a strip layout surrounding the ellipse layout.

Abstract: A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

Abstract: The present disclosure describes method to form a semiconductor device with a diffusion barrier layer. The method includes forming a gate dielectric layer on a fin structure, forming a work function stack on the gate dielectric layer, reducing a carbon concentration in the work function stack, forming a barrier layer on the work function stack, and forming a metal layer over the barrier layer. The barrier layer blocks a diffusion of impurities into the work function stack, the gate dielectric layer, and the fin structure.

Abstract: In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region made of a semiconductor material, a first work function adjustment material layer is formed over the gate dielectric layer, an adhesion enhancement layer is formed on the first work function adjustment material layer, a mask layer including an antireflective organic material layer is formed on the adhesion enhancement layer, and the adhesion enhancement layer and the first work function adjustment material layer are patterned by using the mask layer as an etching mask. The adhesion enhancement layer has a higher adhesion strength to the antireflective organic material layer than the first work function adjustment material layer.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes the following operations. A first layout including a plurality of first features is provided. A modified second layout is determined. The modified second layout includes a plurality of modified features separated from each other, and each of the plurality of modified features respectively overlaps each of the plurality of first features. The modified second layout is outputted to a photomask.

Abstract: A semiconductor device with different gate structure configurations and a method of fabricating the same are disclosed. The semiconductor device includes a fin structure disposed on a substrate, and first and second gate structures on the fin structure. The first and second gate structures includes first and second interfacial oxide layers, respectively, first and second high-K gate dielectric layers disposed on the first and second TO layers, respectively, and first and second dopant control layers disposed on the first and second HK gate dielectric layers, respectively. The second dopant control layer has a silicon-to-metal atomic concentration ratio greater than an Si-to-metal atomic concentration ratio of the first dopant control layer. The semiconductor further includes first and second work function metal layers disposed on the first and second dopant control layers, respectively, and first and second gate metal fill layers disposed on the first and second work function metal layers, respectively.

Abstract: A semiconductor structure includes a substrate including a first surface; a dielectric layer disposed over the first surface of the substrate; a first conductive line surrounded by the dielectric layer and extended over the first surface of the substrate; a second conductive line disposed adjacent to the first conductive line, surrounded by the dielectric layer and extended parallel to the first conductive line; a conductive via disposed over the first conductive line and extended through the dielectric layer; and a cross section of the conductive via substantially parallel to the first surface of the substrate, wherein the cross section of the conductive via is at least partially protruded from the first conductive line towards the second conductive line. Further, a method of manufacturing the semiconductor structure is also disclosed.

Abstract: A video processing method for a video encoder or decoder comprises receiving input data of a current chroma block in a current picture coded in a 4:2:2 color format, determining a luma mode of a luma block corresponding to the current chroma block, mapping the luma mode to a mapped intra mode of the current chroma block, selectively replacing the mapped intra mode by wide angle intra prediction mapping based on a width to height ratio of the current chroma block, deriving an intra predictor according to the mapped intra mode after wide angle intra prediction mapping, and encoding or decoding the current chroma block according to the intra predictor. The mapped intra mode is mode 57 when the luma mode is mode 61 and the mapped intra mode is mode 55 when the luma mode is mode 57.

Abstract: A semiconductor device manufacturing method including: simultaneously forming a plurality of conductive bumps respectively on a plurality of formation sites by adjusting a forming factor in accordance with an environmental density associated with each formation site; wherein the plurality of conductive bumps including an inter-bump height uniformity smaller than a value, and the environmental density is determined by a number of neighboring formation sites around each formation site in a predetermined range.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate structure, and source/drain structures. The semiconductor fin extends upwardly from the substrate. The gate structure is across the semiconductor fin and includes a high-k dielectric layer over the semiconductor fin, a fluorine-containing work function layer over the high-k dielectric layer and comprising fluorine, a tungsten-containing layer over the fluorine-containing work function layer, and a metal gate electrode over the tungsten-containing layer. The source/drain structures are on the semiconductor fin and at opposite sides of the gate structure.

Abstract: The disclosed embodiments provide a system for processing data. During operation, the system obtains a function call for a function that calculates an attribute associated with a machine learning model. For each argument of the function call, the system identifies a parameter type of the argument, wherein the parameter type represents a type of data used with the machine learning model. The system also obtains a value accessor for retrieving features specific to the parameter type and obtains a value represented by the argument using the value accessor. The system then calculates the attribute by applying the function to the value and uses the attribute to execute the machine learning model.

Abstract: A method of forming a semiconductor device includes following steps. A first organic layer is formed to cover a first conductive layer. A first opening is formed in the first organic layer to expose a first surface of the first conductive layer. A first silicon layer is formed on a sidewall of the first opening and the first surface of the first conductive layer. A first dielectric layer is formed on the sidewall of the first opening and the first surface of the first conductive layer over the first silicon layer. By using a first mask, portions of the first silicon layer and the first dielectric layer on the first surface are simultaneously removed to expose the first surface, wherein after removing the portions of the first silicon layer and the first dielectric layer, the first dielectric layer covers a top surface of the first silicon layer.

Abstract: A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.

Abstract: A method and apparatus for video coding using Intra prediction are disclosed. In one method, a first prediction sample in an immediately right column of the current block and a second prediction sample in an immediately below row of the current block are derived using angular prediction. The first prediction sample and a left column reference sample in the same row as the first prediction sample are interpolated to generate a horizontal predictor. The second prediction sample and an above-row reference sample in the same column as the second prediction sample are interpolated to generate a vertical predictor. The vertical predictor and the horizontal predictor are linearly combined to generate an angular-planar prediction sample. In another method, a first predictor is generated using angular prediction and a second predictor is generated using planar prediction. The first predictor and the second predictor are linearly combined to generate a fused Intra predictor.

Abstract: A semiconductor device includes a gate structure disposed over a channel region and a source/drain region. The gate structure includes a gate dielectric layer over the channel region, one or more work function adjustment material layers over the gate dielectric layer, and a metal gate electrode layer over the one or more work function adjustment material layers. The one or more work function adjustment layers includes an aluminum containing layer, and a diffusion barrier layer is disposed at at least one of a bottom portion and a top portion of the aluminum containing layer. The diffusion barrier layer is one or more of a Ti-rich layer, a Ti-doped layer, a Ta-rich layer, a Ta-doped layer and a Si-doped layer.

Abstract: Method and apparatus of coding a video sequence, are disclosed. According to the method, a bitstream corresponding to encoded data of the video sequence is generated at an encoder side or received at a decoder side, where the bitstream complies with a bitstream conformance that one or more constraints are satisfied. The constraints are related to a set of RPR (Reference Picture Resampling) parameters including scaling window width or height of a current picture, scaling window width or height of a reference picture, current picture width or height, and maximum picture width or height specified for the video sequence. Scaling information for the RPR mode is derived using the set of RPR parameters. A target picture of the video sequence is then encoded at the encoder side or decoded at the decoder side by utilizing the scaling information when the RPR mode is enabled for the target picture.

Abstract: A video processing method for a video encoder or decoder comprises receiving input data of a current chroma block in a current picture coded in a 4:2:2 color format, determining a luma mode of a luma block corresponding to the current chroma block, mapping the luma mode to a mapped intra mode of the current chroma block, selectively replacing the mapped intra mode by wide angle intra prediction mapping based on a width to height ratio of the current chroma block, deriving an intra predictor according to the mapped intra mode after wide angle intra prediction mapping, and encoding or decoding the current chroma block according to the intra predictor. The mapped intra mode is mode 57 when the luma mode is mode 61 and the mapped intra mode is mode 55 when the luma mode is mode 57.