Abstract: A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.

Abstract: A phase detecting apparatus and a phase adjusting method are provided. Determine whether to output a phase adjusting control signal according to a first data sampling value, a second data sampling value and a third data sampling value that are successively generated, so as to adjust a phase of a sampling clock signal used to sample a data signal.

Abstract: A vehicle equipped with a telematics technology is provided. The vehicle includes a communication module, a display module, a processing module and an input module. The communication module receives information packets that include vehicle data and service data from a plurality of image-delivering vehicles. The processing module retrieves the information packets from the communication module to control the display module to display the vehicle information of each of the image-delivering vehicles accordingly. The input module receives a selection input. The processing module selects at least one of the image-delivering vehicles to wirelessly connect to a selected image-delivering vehicle and retrieves event-recording image therefrom to display the event-recording image on the display module.

Abstract: A defibrillator device is provided. The defibrillator device includes a first electrode, a second electrode, a readout module, a USB interface, a voltage converter and a stimulation module. When the first and second electrodes contact the chest of a patient, the readout module obtains a physiologic rhythm signal of the patient and provides a heart rhythm signal according to the first physiologic rhythm signal. According to a first voltage from a portable electronic device, the voltage converter generates a second voltage when the first USB interface is coupled to the portable electronic device, wherein the second voltage is larger than the first voltage. When the physiologic rhythm signal indicates that cardiac arrhythmia is present in the patient, the stimulation module provides an electric shock energy to the chest of the patient via the first and second electrodes according to the second voltage.

Abstract: An optical transceiver module coupled to a device is provided. The optical transceiver module includes an electronic signal transmitting terminal coupled to a receiving terminal of the device, an electronic signal receiving terminal coupled to a transmitting terminal of the device, an optical signal receiving terminal coupled to the electronic signal transmitting terminal, and an optical signal transmitting terminal coupled to the electronic signal receiving terminal. When the optical transceiver module is at an normal operation state and the electronic signal receiving terminal does not receive any electronic signal over a first predetermined time period, the optical transceiver module enters a idle detection state to make the electronic signal transmitting terminal to perform a receiver termination detection to the device to determine whether the device is coupled to the optical transceiver module.

Abstract: A pulse width modulation signal generation circuit and a pulse width modulation signal generation method are provided. A clock generator is configured for generating a clock signal including a plurality of pulses. The counting unit is coupled to the clock generator, and configured for storing a period parameter and outputting a counting value by counting the pulses of the clock signal based on the period parameter and a bidirectional counting mode. The comparing unit is coupled to the counting unit and is configured for comparing the counting value and a comparing threshold to output a level control signal. The signal generating unit is coupled to the comparing unit and configured for generating a pulse width modulation signal according to the level control signal. When the period parameter is odd, the counting value outputted by the counting unit is equal to a middle value in the two continuous clock cycles.

Abstract: A clock generating apparatus includes an oscillator and a frequency synthesizer. The oscillator is utilized for generating a reference clock signal. The frequency synthesizer is coupled to the oscillator and utilized for synthesizing a target clock signal in accordance with the reference clock signal and a frequency division factor that has been adjusted or compensated, and outputting the target clock signal as an output of the clock generating apparatus.

Abstract: The present invention provides an alpha-methylacyl-CoA racemase binding aptamers. The present invention further provides a kit for detecting alpha-methylacyl-CoA racemase or cancer in a sample, which comprises the above-mentioned alpha-methylacyl-CoA racemase binding aptamers.

Abstract: A super high voltage device includes a first gate, a second gate, a drain, a first source, a second source, and a third source. The first gate is used for receiving a first control signal generated from a pulse width modulation controller. The second gate is used for receiving a second control signal generated from the pulse width modulation controller. The drain is used for receiving an input voltage. First current flowing from the drain to the first source varies with the first control signal and the input voltage. The second control signal is used for controlling turning-on and turning-off of second current flowing from the drain to the second source and third current flowing from the drain to the third source. The third source is proportional to the second current.

Abstract: A clock generating apparatus includes an oscillator and a frequency synthesizer. The oscillator is utilized for generating a reference clock signal. The frequency synthesizer is coupled to the oscillator and utilized for synthesizing a target clock signal in accordance with the reference clock signal and a frequency division factor that has been adjusted or compensated, and outputting the target clock signal as an output of the clock generating apparatus.

Abstract: The present invention discloses a stem cell culture medium and its applications as well as a stem cell culture method. The said stem cell culture medium contains no serum. The said stem cell culture medium contains amino acids, vitamins, salts, lipids, cytokines and protein polypeptides. The said stem cell culture medium is suitable for rapid culture of stem cells derived from human and mammalian tissues, including but not limited to, adipose mesenchymal stem cells, bone marrow mesenchymal stem cells and umbilical cord blood stem cells. The said culture medium can increase the proliferation speed of the stem cells 3-5 times, without any affects on their differentiation potentials. Comparing the said stem cell culture medium to a routine culture medium, the said culture medium is not only able to proliferate stem cells derived from different sources more rapidly and achieve more proliferation generations, but also keep their differentiation potentials well.

Abstract: A LED fabrication method includes: providing a substrate; forming a low-temperature AlxGa1-xN (0?x?1) layer over the growth substrate; setting the growth pressure from high to low and temperature and rotation rate from low to high to realize change from three-dimensional growth to two-dimensional growth of the GaN structure layer before growth of the multiple quantum-well layer, in which, Si is doped at position approximate to the multiple quantum-well layer to form an undoped gradient GaN layer and an N-type gradient GaN layer; growing a multiple quantum-well layer, an AlxGa1-xN (0?x?1) layer and a P-type layer; and during later chip fabrication, dividing the epitaxial wafer over the etched N-type platform into chip grains and immersing them in chemical solutions for wet etching; and forming an inverted pyramid structure with rough side wall over the multiple quantum-well layer to improve light-emitting efficiency.

Abstract: An optical element stress aberration calculation system and method, where a stress distribution is obtained through a stress analysis and a light tracking technologies, and then a stress distribution generated by incident lights with different viewing angles is calculated, so that a stress aberration error is reduced.

Abstract: Various embodiments of an apparatus and method of multi-course infusion for brewing tea and other beverages are provided. In one aspect, a method of multi-course infusion for brewing tea and other beverages may receive, in an infusion chamber of an apparatus, an amount of beverage medium in dried state. The method may also provide steam into the infusion chamber to pre-condition the beverage medium. The method may further perform multi-course infusion of the beverage medium in hot water by repeating more than once a process that includes: showering hot water down onto the beverage medium in the infusion chamber, infusing the beverage medium in the hot water for some infusion time to form the beverage, providing steam into the infusion chamber while the beverage medium is infused in the hot water, drawing the beverage into one or more carafes after the infusion time has elapsed.

Abstract: A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.

Abstract: An optical transmission device is provided. The optical transmission device is coupled between a first electronic device and a second electronic device, and includes a first optical transceiver module coupled to the first electronic device; a second optical transceiver module coupled to the second electronic device; and first and second optical fibers coupled between the first optical transceiver module and the second optical transceiver module, wherein the second optical transceiver module transmits an optical signal to the first optical transceiver module periodically when the second electronic device is idle for a first predetermined period.

Abstract: A method of forming of an image sensor device includes a patterned hardmask layer is formed over a substrate. The patterned hard mask layer has a plurality of first openings in a periphery region, and a plurality of second openings in a pixel region. A first patterned mask layer is formed over the pixel region to expose the periphery region. A plurality of first trenches is etched into the substrate in the periphery region. Each first trench, each first opening and each second opening are filled with a dielectric material. A second patterned mask layer is formed over the periphery region to expose the pixel region. The dielectric material in each second opening over the pixel region is removed. A plurality of dopants is implanted through each second opening to form various doped isolation features in the pixel region.