Abstract: An electromagnetic proportional flow rate control valve capable of performing precise flow rate control in a low flow rate side of an operating region is provided. In an electromagnetic proportional flow rate control valve 32, in which a valve member 2 is driven in a valve closing direction in accordance with the increase in a driving current I of a solenoid coil 15, a solenoid driving force F is set such that it decreases accompanying the displacement of the valve member 2 in the valve closing direction with respect to an identical driving current in the solenoid coil 15. Thus, an amount of change in an area of a valve opening with respect to unit changes in the driving current I becomes smaller in a region at which the stroke is small compared to a case of having flat characteristics, whereby the flow rate control precision in the low flow rate region can be improved.

Abstract: A substrate processing apparatus comprising: a substrate holder which holds a substrate having a pattern formed in a surface of the substrate in a predetermined positional relationship with a reference indicator of the substrate; and a cleaner which abuts an adhesive member on the surface of the substrate which is held by the substrate holder and peels off the adhesive member along the surface of the substrate in a peeling direction which is not at right angle to a direction of the pattern, thereby cleaning the surface of the substrate.

Abstract: A plasma processing apparatus includes a processing chamber, a sample stage, a radio-frequency power supply which enables generation of plasma in the processing chamber, and at least one induction coil. The induction coil is formed by connecting a plurality of identical coil elements so that a same radio-frequency voltage is applied to each of the plurality of identical coil elements, and each input terminals of the identical coil elements is displaced at intervals of an angle calculated by dividing 360° by the number of identical coil elements. Continuous conductor portions of the identical coil elements are formed on different adjacent surfaces of the annular ring and constituted so as to be displaced from one another for a predetermined angle at a time so as to extend along a circumferential direction of the different adjacent surfaces of the annular ring.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Abstract: There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

Abstract: The button fastener comprises a fastener body and a cover member which is attached to the fastener body. The fastener body includes a disk-like base and a hollow, cylindrical post extending upward from a center area of the base concentrically. The post has a top opening at its upper end and a bottom opening in a center area of the base. The cover member covers the lower surface of the base including the bottom opening. The base includes a base bottom adjacent to the post and a base flange rising upward relative to the base bottom radially outward from the base bottom. The cover member includes a curved outer periphery curving from the lower surface side of the base and then rising upward beyond the base flange of the base.

Abstract: A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.

Abstract: In the case of inspecting samples having different sizes by means of a semiconductor inspecting apparatus, a primary electron beam bends since distribution is disturbed on an equipotential surface at the vicinity of the sample at the time of inspecting vicinities of the sample, and what is called a positional shift is generated. A potential correcting electrode is arranged outside the sample and at a position lower than the sample lower surface, and a potential lower than that of the sample is applied. Furthermore, a voltage to be applied to the potential correcting electrode is controlled corresponding to a distance between the inspecting position and a sample outer end, sample thickness and irradiation conditions of the primary electron beam.

Abstract: A cooling gas discharge nozzle 7 is arranged above an initial position P(Rin) distant from a rotation center P(0) of a substrate W toward the outer edge of the substrate W and supplies a cooling gas to the initial position P(0) of the rotating substrate W to solidify DIW adhering to an initial region including the initial position P(Rin) and the rotation center P(0). Following formation of an initial solidified region FR0, a range to be solidified is spread toward the outer edge of the substrate W and all the DIW (liquid to be solidified) adhering to a substrate surface Wf is solidified to entirely freeze a liquid film LF.

Abstract: Provided is a plasma processing apparatus in which accuracy or reliability of processing is improved. This plasma processing apparatus includes a sample stage in a processing chamber arranged in a vacuum vessel and in which plasma is generated. The sample stage has a cylindrical shape and operates as an evaporator through which a refrigerant of a refrigerating cycle flows. Further, the apparatus includes refrigerant passages which are concentrically arranged inside of the sample stage, one or more detectors which detect vibrations of the sample stage, and an control unit which controls a temperature of the refrigerant flowing into the sample stage based on detection results of a dryness of the refrigerant flowing through the passages obtained from an output of the detectors.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: DIW in an excessively cooled state is supplied as a solidification liquid to a substrate W, and a solidified material of the DIW is formed by a landing impact on the substrate W. This makes the use of a gaseous refrigerant necessary to form a solidified material unnecessary, eliminates the need for a facility to generate the gaseous refrigerant, shortens a processing time and further enables running cost and the like to be suppressed.

Abstract: Provided is a phase shifter that shifts a phase of an input signal based on switching between a low-pass filter and a high-pass filter, the phase shifter including: a first field-effect transistor that is coupled between an input terminal and an output terminal; a resonance circuit that resonates when the first field-effect transistor is in an on-state; an additional line that is coupled between the resonance circuit and a node that is included in a signal line, which is formed between the input and output terminals when the first field-effect transistor is in the on-state; and an inductor that is included in a part of the signal line and forms a low-pass filter together with at least the additional line, when the first field-effect transistor is in the on-state.

Abstract: An imaging apparatus includes an electron emission array having electron sources arranged in matrix form, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film, wherein the control and drive circuit is further configured to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film in any one or more blanking periods excluding both a blanking period immediately following the given video signal output period and a blanking period immediately preceding a next video signal output period in which the one or more horizontal scan lines will be selected next time.

Abstract: A decorative part and a process for producing the decorative part. A first nitride layer containing at least one metal selected among hafnium, titanium, and zirconium is formed on the surface of a decorative part comprising a soft base made of a material selected among stainless steel, titanium and titanium alloys, brass, etc., and a second nitride layer containing at least one metal which is selected among hafnium, titanium, and zirconium and is different from that in the first nitride layer is formed on the first nitride layer to thereby form a primer layer. A multilayered hardened layer including a gold alloy layer is further formed as a finish layer on the primer layer.

Abstract: A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

Abstract: Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

Abstract: A rinsing liquid adheres to a substrate subjected to a cleaning process. The rinsing liquid on the substrate is first replaced with IPA liquid. While the substrate covered with the IPA liquid is held in a dryer chamber, liquid carbon dioxide is supplied to the surface of the substrate. Liquid nitrogen is supplied to cool down the interior of the dryer chamber. This solidifies the liquid carbon dioxide on the substrate into solid carbon dioxide. Thereafter, the pressure in the dryer chamber is returned to atmospheric pressure, and gaseous nitrogen is supplied into the dryer chamber. Thus, the temperature in the dryer chamber increases. The solid carbon dioxide on the surface of the substrate is sublimated, and is hence removed from the substrate. All of the steps are performed while carbon dioxide is not in a supercritical state but in a non-supercritical state.

Abstract: The charged particle beam device has a problem that a symmetry of equipotential distribution is disturbed near the outer edge of a specimen, an object being evaluated, causing a charged particle beam to deflect there. An electrode plate installed inside the specimen holding mechanism of electrostatic attraction type is formed of an inner and outer electrode plates arranged concentrically. The outer electrode plate is formed to have an outer diameter larger than that of the specimen. The dimensions of the electrode plates are determined so that an overlapping area of the outer electrode plate and the specimen is substantially equal to an area of the inner electrode plate. The inner electrode plate is impressed with a voltage of a positive polarity with respect to a reference voltage and of an arbitrary magnitude, and the outer electrode is impressed with a voltage of a negative polarity and of an arbitrary magnitude.

Abstract: Fixed amount discharging equipment for simultaneously discharging a particulate body from a plurality of containers containing the particulate body, comprising a casing to the interior of which is provided a belt conveyor and having a particulate body discharge hole below the carrying direction end of the belt conveyor, and a plurality of supply arranged in the carrying direction of the belt conveyor and passing through the casing, lower ends thereof penetrating into the casing and being arranged above the belt of the belt conveyor, the lower ends of the supply pipes being such that the downstream sides thereof in the belt carrying direction have notches of a predetermined length from the end faces upward.